WO2009072406A1 - シリコンウェーハ洗浄方法およびその装置 - Google Patents

シリコンウェーハ洗浄方法およびその装置 Download PDF

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Publication number
WO2009072406A1
WO2009072406A1 PCT/JP2008/071198 JP2008071198W WO2009072406A1 WO 2009072406 A1 WO2009072406 A1 WO 2009072406A1 JP 2008071198 W JP2008071198 W JP 2008071198W WO 2009072406 A1 WO2009072406 A1 WO 2009072406A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
component
silicon wafer
organic acid
wafer
Prior art date
Application number
PCT/JP2008/071198
Other languages
English (en)
French (fr)
Inventor
Shigeru Okuuchi
Kazushige Takaishi
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to US12/746,201 priority Critical patent/US7955440B2/en
Priority to KR1020107011489A priority patent/KR101106582B1/ko
Priority to JP2009544631A priority patent/JP4992981B2/ja
Priority to EP08857296.1A priority patent/EP2224470B1/en
Publication of WO2009072406A1 publication Critical patent/WO2009072406A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Abstract

　チャンバ内でウェーハ表面に水膜を形成後、水膜に、酸化ガスの酸化成分、有機酸ミストの有機酸成分とＨＦガスのＨＦ成分、有機酸ミスト、酸化ガスの酸化成分を順に供給する。結果、ＨＦ成分と有機酸成分でのウェーハ面の洗浄効果が得られ、ウェーハ面内での水膜中の洗浄成分の濃度を均一にできる。
PCT/JP2008/071198 2007-12-07 2008-11-21 シリコンウェーハ洗浄方法およびその装置 WO2009072406A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/746,201 US7955440B2 (en) 2007-12-07 2008-11-21 Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer
KR1020107011489A KR101106582B1 (ko) 2007-12-07 2008-11-21 실리콘 웨이퍼 세정 방법 및 그 장치
JP2009544631A JP4992981B2 (ja) 2007-12-07 2008-11-21 シリコンウェーハ洗浄方法
EP08857296.1A EP2224470B1 (en) 2007-12-07 2008-11-21 Method for cleaning silicon wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-317621 2007-12-07
JP2007317621 2007-12-07

Publications (1)

Publication Number Publication Date
WO2009072406A1 true WO2009072406A1 (ja) 2009-06-11

Family

ID=40717588

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071198 WO2009072406A1 (ja) 2007-12-07 2008-11-21 シリコンウェーハ洗浄方法およびその装置

Country Status (5)

Country Link
US (1) US7955440B2 (ja)
EP (1) EP2224470B1 (ja)
JP (1) JP4992981B2 (ja)
KR (1) KR101106582B1 (ja)
WO (1) WO2009072406A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8529105B2 (en) 2008-07-10 2013-09-10 Koninklijke Philips N.V. Remote cooling by combining heat pipe and resonator for synthetic jet cooling
US8664092B2 (en) 2009-06-26 2014-03-04 Sumco Corporation Method for cleaning silicon wafer, and method for producing epitaxial wafer using the cleaning method
JPWO2014034924A1 (ja) * 2012-09-03 2016-08-08 学校法人早稲田大学 スラッジ回収方法及び粉粒体

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120160272A1 (en) * 2010-12-23 2012-06-28 United Microelectronics Corp. Cleaning method of semiconductor process
TWI669760B (zh) * 2011-11-30 2019-08-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6718714B2 (ja) * 2016-03-25 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN109273560A (zh) * 2018-09-29 2019-01-25 苏州昊建自动化系统有限公司 一种用于硅电池的二氧化硅膜离线生成系统
CN109648451B (zh) * 2018-12-29 2020-12-01 徐州鑫晶半导体科技有限公司 硅晶圆的最终抛光方法和最终抛光装置
CN113161259A (zh) * 2020-01-23 2021-07-23 东京毅力科创株式会社 基板处理装置、基板处理方法和化学溶液

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380538A (ja) * 1989-05-06 1991-04-05 Dainippon Screen Mfg Co Ltd 基板の表面処理方法
JPH09293701A (ja) 1995-12-28 1997-11-11 Texas Instr Inc <Ti> 半導体を製造する方法
JP2002299300A (ja) * 2001-03-30 2002-10-11 Kaijo Corp 基板処理方法

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Publication number Priority date Publication date Assignee Title
US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
KR930007098A (ko) * 1991-09-25 1993-04-22 정용문 매우 작은 주파수 간격을 갖는 주파수 합성기
US5922624A (en) * 1993-05-13 1999-07-13 Imec Vzw Method for semiconductor processing using mixtures of HF and carboxylic acid
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
JP3324455B2 (ja) * 1997-07-18 2002-09-17 信越半導体株式会社 珪素系半導体基板の清浄化方法
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
JP3454302B2 (ja) * 1998-07-31 2003-10-06 三菱住友シリコン株式会社 半導体基板の洗浄方法
JP3239998B2 (ja) * 1998-08-28 2001-12-17 三菱マテリアルシリコン株式会社 半導体基板の洗浄方法
JP2000117208A (ja) * 1998-10-13 2000-04-25 Kurita Water Ind Ltd 電子材料の洗浄方法
ATE485115T1 (de) * 1999-07-23 2010-11-15 Semitool Inc Verfahren und system zum behandeln eines werkstückes wie eines halbleiterwafers
TW466558B (en) * 1999-09-30 2001-12-01 Purex Co Ltd Method of removing contamination adhered to surfaces and apparatus used therefor
US6743301B2 (en) * 1999-12-24 2004-06-01 mFSI Ltd. Substrate treatment process and apparatus
US7681581B2 (en) * 2005-04-01 2010-03-23 Fsi International, Inc. Compact duct system incorporating moveable and nestable baffles for use in tools used to process microelectronic workpieces with one or more treatment fluids

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380538A (ja) * 1989-05-06 1991-04-05 Dainippon Screen Mfg Co Ltd 基板の表面処理方法
JPH09293701A (ja) 1995-12-28 1997-11-11 Texas Instr Inc <Ti> 半導体を製造する方法
JP2002299300A (ja) * 2001-03-30 2002-10-11 Kaijo Corp 基板処理方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2224470A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8529105B2 (en) 2008-07-10 2013-09-10 Koninklijke Philips N.V. Remote cooling by combining heat pipe and resonator for synthetic jet cooling
US8664092B2 (en) 2009-06-26 2014-03-04 Sumco Corporation Method for cleaning silicon wafer, and method for producing epitaxial wafer using the cleaning method
KR101377240B1 (ko) * 2009-06-26 2014-03-20 가부시키가이샤 사무코 실리콘 웨이퍼의 세정 방법 및, 그 세정 방법을 이용한 에피택셜 웨이퍼의 제조 방법
JPWO2014034924A1 (ja) * 2012-09-03 2016-08-08 学校法人早稲田大学 スラッジ回収方法及び粉粒体

Also Published As

Publication number Publication date
KR20100086004A (ko) 2010-07-29
KR101106582B1 (ko) 2012-01-19
JPWO2009072406A1 (ja) 2011-04-21
EP2224470A1 (en) 2010-09-01
US20100252070A1 (en) 2010-10-07
EP2224470A4 (en) 2012-04-18
JP4992981B2 (ja) 2012-08-08
US7955440B2 (en) 2011-06-07
EP2224470B1 (en) 2016-03-23

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