KR930019861A - 조밀상 기체를 이용한 코팅 방법 - Google Patents
조밀상 기체를 이용한 코팅 방법 Download PDFInfo
- Publication number
- KR930019861A KR930019861A KR1019920023912A KR920023912A KR930019861A KR 930019861 A KR930019861 A KR 930019861A KR 1019920023912 A KR1019920023912 A KR 1019920023912A KR 920023912 A KR920023912 A KR 920023912A KR 930019861 A KR930019861 A KR 930019861A
- Authority
- KR
- South Korea
- Prior art keywords
- coating
- substrate
- dense gas
- mixture
- pressure
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
- B05D2401/90—Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
본 발명에서는 기판을 코팅 챔버에 넣고, 이 기판을 선택된 온도 및 조밀상 기체의 임계 압력 이상의 기판의 전체 표면내에 조밀상 기체중의 선택된 코팅 물질의 혼합물을 완전히 침투시키기에 충분한 기간동안 상기 혼합물과 접촉시키는 것으로 이루어지는 선택된 물질로 기판을 코팅시키는 방법이 제공된다. 이어서, 조밀상 기체의 상을 전이시켜 조밀상 기체로부터 선택된 물질을 용해시킴으로써 기판상에 선택된 물질의 코팅을 형성시킨다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 예시적 방법의 단계를 나타내는 순서도.
제2도는 본 발명에 따라서 이용하기 위한 예시적 시스템에 대한 도면.
Claims (8)
- (a)선택된 물질 및 이 선택된 물질이 용해될 수 있는 선택된 조밀상 기체의 혼합물을 제공하고; (b)기판을 코팅 챔버에 놓고; (c)예정된 온도 및 조밀상 기체의 임계 압력 이상의 압력에서 기판의 전체 표면내에 상기 혼합물을 완전히 침투시키기에 충분한 예정된 기간동안 상기 챔버중에서 상기 기판을 혼합물과 접촉시키고; (d)상기 조밀상 기체의 상을 전이시켜 상기 조밀상 기체로부터 상기 선택된 물질을 용해시킴으로써 상기 기판 상에 코팅을 형성시키는 것으로 이루어지는 선택된 물질로 기판을 코팅시키는 방법.
- 제1항에 있어서, 상기 온도를 조밀상 기체의 임계 온도 미만의 온도로 감소시키거나 또는 상기 압력을 조밀상 기체의 임계 압력 미만의 압력으로 감소시킴으로써 조밀상 기체를 초임계 상태로 부터 액체상태로 전이시키는 방법.
- 제1항에 있어서, 상기 조밀상 기체를 액체 상태로부터 초임계 상태로 전이시키는 방법.
- 제1항에 있어서, 상기 조밀상 기체가 이산화탄소, 아산화질소, 암모니아, 헬륨, 크립톤, 아르곤, 메탄, 에탄, 프로판, 부탄, 펜탄, 헥산, 에틸렌, 프로필렌, 테트라플루오로메탄, 클로로디플루오르메탄, 육불화황, 퍼플루오로프로판 및 이들의 혼합물로부터 선택되는 방법.
- 제1항에 있어서, 상기 코팅이 기판의 외부 표면 또는 기판의 간극 표면 상에 형성되는 방법.
- 제5항에 있어서, 상기 기판의 외부 표면상의 코팅을 자외선에 노출시키는 방법.
- 제1항에 있어서, 상기 코팅에 대해 그의 특성을 변화시키기 위한 처리를 수행하는 것을 더 포함하는 방법.
- 제7항에 있어서, 상기 코팅과 화학적으로 반응하여 코팅을 변화시키는 선택된 반응 물질에 상기 코팅을 노출시키는 것을 더 포함하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80575391A | 1991-12-12 | 1991-12-12 | |
US805,753 | 1991-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR930019861A true KR930019861A (ko) | 1993-10-19 |
Family
ID=25192423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920023912A KR930019861A (ko) | 1991-12-12 | 1992-02-11 | 조밀상 기체를 이용한 코팅 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5403621A (ko) |
EP (1) | EP0546452B1 (ko) |
JP (1) | JPH05345985A (ko) |
KR (1) | KR930019861A (ko) |
CA (1) | CA2079629A1 (ko) |
DE (1) | DE69225299T2 (ko) |
MX (1) | MX9207221A (ko) |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69520687T2 (de) * | 1994-11-09 | 2001-08-23 | R.R. Street & Co., Inc. | Verfahren und system zur aufbereitung von unter druck stehenden flüssigen lösungsmitteln zur reinigung von substraten |
US5881577A (en) * | 1996-09-09 | 1999-03-16 | Air Liquide America Corporation | Pressure-swing absorption based cleaning methods and systems |
US5908510A (en) * | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
US5789027A (en) * | 1996-11-12 | 1998-08-04 | University Of Massachusetts | Method of chemically depositing material onto a substrate |
US6500605B1 (en) | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
US6306564B1 (en) | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
EP0901153B1 (en) | 1997-09-02 | 2009-07-15 | Ebara Corporation | Method and apparatus for plating a substrate |
JP3945872B2 (ja) * | 1997-09-16 | 2007-07-18 | 株式会社荏原製作所 | めっき前処理方法 |
US7064070B2 (en) * | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
US6277753B1 (en) | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
DK199801455A (da) | 1998-11-10 | 2000-05-11 | Fls Miljoe A S | Fremgangsmåde til imprægnering eller ekstrahering af et harpiksholdigt træsubstrat |
US6689700B1 (en) | 1999-11-02 | 2004-02-10 | University Of Massachusetts | Chemical fluid deposition method for the formation of metal and metal alloy films on patterned and unpatterned substrates |
US6748960B1 (en) * | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
US7356580B1 (en) | 2000-03-30 | 2008-04-08 | Lam Research Corporation | Plug and play sensor integration for a process module |
US7672747B2 (en) | 2000-03-30 | 2010-03-02 | Lam Research Corporation | Recipe-and-component control module and methods thereof |
US6526355B1 (en) * | 2000-03-30 | 2003-02-25 | Lam Research Corporation | Integrated full wavelength spectrometer for wafer processing |
US6890853B2 (en) * | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
EP1303870A2 (en) * | 2000-07-26 | 2003-04-23 | Tokyo Electron Limited | High pressure processing chamber for semiconductor substrate |
US20040011378A1 (en) * | 2001-08-23 | 2004-01-22 | Jackson David P | Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays |
US20030215572A1 (en) * | 2000-10-10 | 2003-11-20 | Naoki Nojiri | Process for preparing composite particles |
US6427544B1 (en) * | 2001-03-14 | 2002-08-06 | United Technologies Corporation | Environmentally friendly ultra-high sensitivity liquid penetrant inspection process and system |
WO2002084709A2 (en) * | 2001-04-10 | 2002-10-24 | Supercritical Systems Inc. | High pressure processing chamber for semiconductor substrate including flow enhancing features |
JP2005510436A (ja) * | 2001-11-21 | 2005-04-21 | ユニバーシティー オブ マサチューセッツ | メソポーラス材料および方法 |
WO2003064065A1 (en) * | 2002-01-25 | 2003-08-07 | Supercritical Systems Inc. | Method for reducing the formation of contaminants during supercritical carbon dioxide processes |
AU2003217547A1 (en) * | 2002-02-15 | 2003-09-09 | Supercritical Systems Inc. | Drying resist with a solvent bath and supercritical co2 |
US6924086B1 (en) | 2002-02-15 | 2005-08-02 | Tokyo Electron Limited | Developing photoresist with supercritical fluid and developer |
JP4246640B2 (ja) | 2002-03-04 | 2009-04-02 | 東京エレクトロン株式会社 | ウェハ処理において低誘電率材料を不動態化する方法 |
US20040003828A1 (en) * | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
CN1642665A (zh) * | 2002-03-22 | 2005-07-20 | 东京毅力科创株式会社 | 用超临界工艺清除杂质 |
US7341947B2 (en) * | 2002-03-29 | 2008-03-11 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates |
US6653236B2 (en) * | 2002-03-29 | 2003-11-25 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions |
US7169540B2 (en) * | 2002-04-12 | 2007-01-30 | Tokyo Electron Limited | Method of treatment of porous dielectric films to reduce damage during cleaning |
US20040045578A1 (en) * | 2002-05-03 | 2004-03-11 | Jackson David P. | Method and apparatus for selective treatment of a precision substrate surface |
US20040016436A1 (en) * | 2002-07-26 | 2004-01-29 | Charles Thomas | Adsorbents for smoking articles comprising a non-volatile organic compound applied using a supercritical fluid |
US20040177867A1 (en) * | 2002-12-16 | 2004-09-16 | Supercritical Systems, Inc. | Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal |
US20040112409A1 (en) * | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
US20040154647A1 (en) * | 2003-02-07 | 2004-08-12 | Supercritical Systems, Inc. | Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing |
US6875285B2 (en) * | 2003-04-24 | 2005-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for dampening high pressure impact on porous materials |
US20040231707A1 (en) * | 2003-05-20 | 2004-11-25 | Paul Schilling | Decontamination of supercritical wafer processing equipment |
US6881437B2 (en) * | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
US7048968B2 (en) * | 2003-08-22 | 2006-05-23 | Micron Technology, Inc. | Methods of depositing materials over substrates, and methods of forming layers over substrates |
US7250374B2 (en) * | 2004-06-30 | 2007-07-31 | Tokyo Electron Limited | System and method for processing a substrate using supercritical carbon dioxide processing |
DE102004037902A1 (de) * | 2004-08-05 | 2006-03-16 | Robert Bosch Gmbh | Verfahren zur Abscheidung einer Anti-Haftungsschicht |
US7307019B2 (en) * | 2004-09-29 | 2007-12-11 | Tokyo Electron Limited | Method for supercritical carbon dioxide processing of fluoro-carbon films |
US20060065288A1 (en) * | 2004-09-30 | 2006-03-30 | Darko Babic | Supercritical fluid processing system having a coating on internal members and a method of using |
US20060102590A1 (en) * | 2004-11-12 | 2006-05-18 | Tokyo Electron Limited | Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry |
US20060102204A1 (en) * | 2004-11-12 | 2006-05-18 | Tokyo Electron Limited | Method for removing a residue from a substrate using supercritical carbon dioxide processing |
US7491036B2 (en) * | 2004-11-12 | 2009-02-17 | Tokyo Electron Limited | Method and system for cooling a pump |
US20060102208A1 (en) * | 2004-11-12 | 2006-05-18 | Tokyo Electron Limited | System for removing a residue from a substrate using supercritical carbon dioxide processing |
US20060102591A1 (en) * | 2004-11-12 | 2006-05-18 | Tokyo Electron Limited | Method and system for treating a substrate using a supercritical fluid |
US20060130966A1 (en) * | 2004-12-20 | 2006-06-22 | Darko Babic | Method and system for flowing a supercritical fluid in a high pressure processing system |
US20060135047A1 (en) * | 2004-12-22 | 2006-06-22 | Alexei Sheydayi | Method and apparatus for clamping a substrate in a high pressure processing system |
US7140393B2 (en) * | 2004-12-22 | 2006-11-28 | Tokyo Electron Limited | Non-contact shuttle valve for flow diversion in high pressure systems |
US7434590B2 (en) * | 2004-12-22 | 2008-10-14 | Tokyo Electron Limited | Method and apparatus for clamping a substrate in a high pressure processing system |
US20060180572A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Removal of post etch residue for a substrate with open metal surfaces |
US7435447B2 (en) * | 2005-02-15 | 2008-10-14 | Tokyo Electron Limited | Method and system for determining flow conditions in a high pressure processing system |
US20060180174A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator |
US7291565B2 (en) * | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
US20060185693A1 (en) * | 2005-02-23 | 2006-08-24 | Richard Brown | Cleaning step in supercritical processing |
US20060186088A1 (en) * | 2005-02-23 | 2006-08-24 | Gunilla Jacobson | Etching and cleaning BPSG material using supercritical processing |
US7550075B2 (en) | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
US7399708B2 (en) * | 2005-03-30 | 2008-07-15 | Tokyo Electron Limited | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning |
US7442636B2 (en) | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
US20060255012A1 (en) * | 2005-05-10 | 2006-11-16 | Gunilla Jacobson | Removal of particles from substrate surfaces using supercritical processing |
US7789971B2 (en) * | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
US7524383B2 (en) * | 2005-05-25 | 2009-04-28 | Tokyo Electron Limited | Method and system for passivating a processing chamber |
WO2006138727A2 (en) * | 2005-06-17 | 2006-12-28 | The Regents Of The University Of Michigan | Apparatus and method of producing net-shape components from alloy sheets |
US20070012337A1 (en) * | 2005-07-15 | 2007-01-18 | Tokyo Electron Limited | In-line metrology for supercritical fluid processing |
FR2891656B1 (fr) * | 2005-10-03 | 2009-05-08 | Nexans Sa | Cable de transmission de donnees et/ou d'energie a revetement ignifuge et procede d'ignifugation d'un tel revetement |
US7588995B2 (en) * | 2005-11-14 | 2009-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to create damage-free porous low-k dielectric films and structures resulting therefrom |
US7565220B2 (en) * | 2006-09-28 | 2009-07-21 | Lam Research Corporation | Targeted data collection architecture |
US7814046B2 (en) * | 2006-09-29 | 2010-10-12 | Lam Research Corporation | Dynamic component-tracking system and methods therefor |
US7951723B2 (en) * | 2006-10-24 | 2011-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated etch and supercritical CO2 process and chamber design |
WO2009005465A1 (en) * | 2007-06-29 | 2009-01-08 | Swetree Technologies Ab | Method to prepare superhydrophobic surfaces on solid bodies by rapid expansion solutions |
CN101459050B (zh) * | 2007-12-14 | 2013-03-27 | 盛美半导体设备(上海)有限公司 | 电化学或化学沉积金属层前预浸润晶片表面的方法和装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2853066A1 (de) * | 1978-12-08 | 1980-06-26 | August Prof Dipl Phys D Winsel | Verfahren zur abdeckung der oberflaeche von insbesondere poroesen pulvern oder poroesen koerpern mit schuetzenden oder schmueckenden schichten |
US4582731A (en) * | 1983-09-01 | 1986-04-15 | Battelle Memorial Institute | Supercritical fluid molecular spray film deposition and powder formation |
US4737384A (en) * | 1985-11-01 | 1988-04-12 | Allied Corporation | Deposition of thin films using supercritical fluids |
DE3737455A1 (de) * | 1986-11-06 | 1988-05-19 | Westinghouse Electric Corp | Einrichtung und verfahren zum erzeugen von farbmustern |
US4737984A (en) * | 1986-12-01 | 1988-04-12 | Northern Telecom Limited | Dial tone detector |
EP0321607B1 (en) * | 1987-12-21 | 1993-09-22 | Union Carbide Corporation | Supercritical fluids as diluents in liquid spray application of coatings |
US5057342A (en) * | 1987-12-21 | 1991-10-15 | Union Carbide Chemicals And Plastics Technology Corporation | Methods and apparatus for obtaining a feathered spray when spraying liquids by airless techniques |
US5108799A (en) * | 1988-07-14 | 1992-04-28 | Union Carbide Chemicals & Plastics Technology Corporation | Liquid spray application of coatings with supercritical fluids as diluents and spraying from an orifice |
US5066522A (en) * | 1988-07-14 | 1991-11-19 | Union Carbide Chemicals And Plastics Technology Corporation | Supercritical fluids as diluents in liquid spray applications of adhesives |
AU624162B2 (en) * | 1988-07-14 | 1992-06-04 | Union Carbide Corporation | Electrostatic liquid spray application of coatings with supercritical fluids as diluents and spraying from an orifice |
US5013366A (en) * | 1988-12-07 | 1991-05-07 | Hughes Aircraft Company | Cleaning process using phase shifting of dense phase gases |
KR960003897B1 (ko) * | 1989-03-22 | 1996-03-23 | 유니온 카바이드 케미칼즈 앤드 플라스틱스 캄파니 인코포레이티드 | 희석제인 초임계성 유체와 함께 분무하기에 적합한 전구 피복 조성물 |
US5009367A (en) * | 1989-03-22 | 1991-04-23 | Union Carbide Chemicals And Plastics Technology Corporation | Methods and apparatus for obtaining wider sprays when spraying liquids by airless techniques |
AU630170B2 (en) * | 1989-03-22 | 1992-10-22 | Union Carbide Chemicals And Plastics Company Inc. | Precursor coating compositions containing water and an organic coupling solvent suitable for spraying with supercritical fluids as diluents |
US5068040A (en) * | 1989-04-03 | 1991-11-26 | Hughes Aircraft Company | Dense phase gas photochemical process for substrate treatment |
FR2659870B1 (fr) * | 1990-03-23 | 1993-03-12 | Degremont | Perfectionnements apportes aux filtres a membranes, pour ultra ou micro-filtration de liquides, notamment d'eau. |
US4970093A (en) * | 1990-04-12 | 1990-11-13 | University Of Colorado Foundation | Chemical deposition methods using supercritical fluid solutions |
US5215253A (en) * | 1990-08-30 | 1993-06-01 | Nordson Corporation | Method and apparatus for forming and dispersing single and multiple phase coating material containing fluid diluent |
US5171613A (en) * | 1990-09-21 | 1992-12-15 | Union Carbide Chemicals & Plastics Technology Corporation | Apparatus and methods for application of coatings with supercritical fluids as diluents by spraying from an orifice |
JPH04222662A (ja) * | 1990-12-25 | 1992-08-12 | Nippon Steel Chem Co Ltd | 固体表面へのポリマー皮膜形成方法 |
US5197800A (en) * | 1991-06-28 | 1993-03-30 | Nordson Corporation | Method for forming coating material formulations substantially comprised of a saturated resin rich phase |
JP3101367B2 (ja) * | 1991-09-09 | 2000-10-23 | 三菱製紙株式会社 | 剥離用シートおよびその製造方法 |
-
1992
- 1992-02-11 KR KR1019920023912A patent/KR930019861A/ko not_active Application Discontinuation
- 1992-10-01 CA CA002079629A patent/CA2079629A1/en not_active Abandoned
- 1992-12-03 DE DE69225299T patent/DE69225299T2/de not_active Expired - Lifetime
- 1992-12-03 EP EP92120667A patent/EP0546452B1/en not_active Expired - Lifetime
- 1992-12-11 MX MX9207221A patent/MX9207221A/es unknown
- 1992-12-14 JP JP4333306A patent/JPH05345985A/ja active Pending
-
1993
- 1993-10-01 US US08/130,671 patent/US5403621A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5403621A (en) | 1995-04-04 |
DE69225299T2 (de) | 1998-12-17 |
CA2079629A1 (en) | 1993-06-13 |
MX9207221A (es) | 1993-12-01 |
JPH05345985A (ja) | 1993-12-27 |
DE69225299D1 (de) | 1998-06-04 |
EP0546452A1 (en) | 1993-06-16 |
EP0546452B1 (en) | 1998-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930019861A (ko) | 조밀상 기체를 이용한 코팅 방법 | |
KR910002707A (ko) | 건식에칭장치, 건식에칭방법 및 거기서 사용하기 위한 무수플루오르화수소 기체 발생기 | |
KR920000967A (ko) | 질화 규소막의 형성방법 | |
KR960035773A (ko) | 반사방지층을 가진 반도체 장치의 형성방법 | |
KR900013597A (ko) | 기판 처리 방법 및 그 장치 | |
MX172932B (es) | Composicion y metodo para depurar hidrocarburos | |
JPS56830A (en) | Surface treatment of acrylic resin molded product | |
KR920007105A (ko) | Aℓ계 재료막의 에칭방법 | |
Stegemeier et al. | Interfacial tension of the methane-normal decane system | |
EP0248224A3 (en) | Mass for removing by chemisorption homogeneous dissolved mixtures, particularly oxygen, from gases or liquids | |
Sagert et al. | Surface viscosities at high pressure gas-liquid interfaces | |
Granero-Porati et al. | Temporal organization in a morphogenetic field | |
KR950003196A (ko) | 액체 인듐 원 | |
SE7701134L (sv) | Forfarande och anordning for sleckning av sadan brinnande gas, som bildats av en flytande gas | |
JPS5234669A (en) | Gaseous phase growing apparatus of semiconductor | |
FR2285886A2 (fr) | Procede de synthese de tetrahydro 1,4-oxazines 2,4-disubstituees | |
JPS5334693A (en) | Ozone generating apparatus | |
KR930021590A (ko) | 안정화된 141b | |
ATE208330T1 (de) | Herstellungsverfahren eines geschlossenen, kontrastmittel enhaltenden behälters | |
KR970023807A (ko) | 화학 기계적 연마 시스템내의 중심부 연마 장치 및 방법 | |
BR8105700A (pt) | Porcesso e dispositivo para dotarcalibradamente um gas de suporte com pequenas concentracoes de um gas agressivo | |
ES257298A3 (es) | Un procedimiento para la aplicaciën de siliconas en recubrimientos | |
JPS51142343A (en) | On-off device for optical microscope | |
KR900017108A (ko) | 박막 저항층의 제조방법 | |
JPS51126470A (en) | Fixing method of end of cord-shaped article wound on cooled body |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |