KR930019861A - 조밀상 기체를 이용한 코팅 방법 - Google Patents

조밀상 기체를 이용한 코팅 방법 Download PDF

Info

Publication number
KR930019861A
KR930019861A KR1019920023912A KR920023912A KR930019861A KR 930019861 A KR930019861 A KR 930019861A KR 1019920023912 A KR1019920023912 A KR 1019920023912A KR 920023912 A KR920023912 A KR 920023912A KR 930019861 A KR930019861 A KR 930019861A
Authority
KR
South Korea
Prior art keywords
coating
substrate
dense gas
mixture
pressure
Prior art date
Application number
KR1019920023912A
Other languages
English (en)
Inventor
피. 잭슨 데이비드
에프. 버크 오벌
Original Assignee
완다 케이. 덴슨-로우
휴우즈 에어크라프 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 완다 케이. 덴슨-로우, 휴우즈 에어크라프 캄파니 filed Critical 완다 케이. 덴슨-로우
Publication of KR930019861A publication Critical patent/KR930019861A/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/18Processes for applying liquids or other fluent materials performed by dipping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/90Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

본 발명에서는 기판을 코팅 챔버에 넣고, 이 기판을 선택된 온도 및 조밀상 기체의 임계 압력 이상의 기판의 전체 표면내에 조밀상 기체중의 선택된 코팅 물질의 혼합물을 완전히 침투시키기에 충분한 기간동안 상기 혼합물과 접촉시키는 것으로 이루어지는 선택된 물질로 기판을 코팅시키는 방법이 제공된다. 이어서, 조밀상 기체의 상을 전이시켜 조밀상 기체로부터 선택된 물질을 용해시킴으로써 기판상에 선택된 물질의 코팅을 형성시킨다.

Description

조밀상 기체를 이용한 코팅 방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 예시적 방법의 단계를 나타내는 순서도.
제2도는 본 발명에 따라서 이용하기 위한 예시적 시스템에 대한 도면.

Claims (8)

  1. (a)선택된 물질 및 이 선택된 물질이 용해될 수 있는 선택된 조밀상 기체의 혼합물을 제공하고; (b)기판을 코팅 챔버에 놓고; (c)예정된 온도 및 조밀상 기체의 임계 압력 이상의 압력에서 기판의 전체 표면내에 상기 혼합물을 완전히 침투시키기에 충분한 예정된 기간동안 상기 챔버중에서 상기 기판을 혼합물과 접촉시키고; (d)상기 조밀상 기체의 상을 전이시켜 상기 조밀상 기체로부터 상기 선택된 물질을 용해시킴으로써 상기 기판 상에 코팅을 형성시키는 것으로 이루어지는 선택된 물질로 기판을 코팅시키는 방법.
  2. 제1항에 있어서, 상기 온도를 조밀상 기체의 임계 온도 미만의 온도로 감소시키거나 또는 상기 압력을 조밀상 기체의 임계 압력 미만의 압력으로 감소시킴으로써 조밀상 기체를 초임계 상태로 부터 액체상태로 전이시키는 방법.
  3. 제1항에 있어서, 상기 조밀상 기체를 액체 상태로부터 초임계 상태로 전이시키는 방법.
  4. 제1항에 있어서, 상기 조밀상 기체가 이산화탄소, 아산화질소, 암모니아, 헬륨, 크립톤, 아르곤, 메탄, 에탄, 프로판, 부탄, 펜탄, 헥산, 에틸렌, 프로필렌, 테트라플루오로메탄, 클로로디플루오르메탄, 육불화황, 퍼플루오로프로판 및 이들의 혼합물로부터 선택되는 방법.
  5. 제1항에 있어서, 상기 코팅이 기판의 외부 표면 또는 기판의 간극 표면 상에 형성되는 방법.
  6. 제5항에 있어서, 상기 기판의 외부 표면상의 코팅을 자외선에 노출시키는 방법.
  7. 제1항에 있어서, 상기 코팅에 대해 그의 특성을 변화시키기 위한 처리를 수행하는 것을 더 포함하는 방법.
  8. 제7항에 있어서, 상기 코팅과 화학적으로 반응하여 코팅을 변화시키는 선택된 반응 물질에 상기 코팅을 노출시키는 것을 더 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920023912A 1991-12-12 1992-02-11 조밀상 기체를 이용한 코팅 방법 KR930019861A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80575391A 1991-12-12 1991-12-12
US805,753 1991-12-12

Publications (1)

Publication Number Publication Date
KR930019861A true KR930019861A (ko) 1993-10-19

Family

ID=25192423

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920023912A KR930019861A (ko) 1991-12-12 1992-02-11 조밀상 기체를 이용한 코팅 방법

Country Status (7)

Country Link
US (1) US5403621A (ko)
EP (1) EP0546452B1 (ko)
JP (1) JPH05345985A (ko)
KR (1) KR930019861A (ko)
CA (1) CA2079629A1 (ko)
DE (1) DE69225299T2 (ko)
MX (1) MX9207221A (ko)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0791093B1 (en) * 1994-11-09 2001-04-11 R.R. STREET & CO., INC. Method and system for rejuvenating pressurized fluid solvents used in cleaning substrates
US5881577A (en) * 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5789027A (en) * 1996-11-12 1998-08-04 University Of Massachusetts Method of chemically depositing material onto a substrate
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6544585B1 (en) 1997-09-02 2003-04-08 Ebara Corporation Method and apparatus for plating a substrate
JP3945872B2 (ja) * 1997-09-16 2007-07-18 株式会社荏原製作所 めっき前処理方法
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
DK199801455A (da) 1998-11-10 2000-05-11 Fls Miljoe A S Fremgangsmåde til imprægnering eller ekstrahering af et harpiksholdigt træsubstrat
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6689700B1 (en) * 1999-11-02 2004-02-10 University Of Massachusetts Chemical fluid deposition method for the formation of metal and metal alloy films on patterned and unpatterned substrates
US6526355B1 (en) * 2000-03-30 2003-02-25 Lam Research Corporation Integrated full wavelength spectrometer for wafer processing
US7672747B2 (en) 2000-03-30 2010-03-02 Lam Research Corporation Recipe-and-component control module and methods thereof
US7356580B1 (en) 2000-03-30 2008-04-08 Lam Research Corporation Plug and play sensor integration for a process module
KR100693691B1 (ko) * 2000-04-25 2007-03-09 동경 엘렉트론 주식회사 금속 필름의 침착방법 및 초임계 건조/세척 모듈을포함하는 금속침착 복합공정장치
AU2001290171A1 (en) * 2000-07-26 2002-02-05 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US20040011378A1 (en) * 2001-08-23 2004-01-22 Jackson David P Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays
US20030215572A1 (en) * 2000-10-10 2003-11-20 Naoki Nojiri Process for preparing composite particles
US6427544B1 (en) * 2001-03-14 2002-08-06 United Technologies Corporation Environmentally friendly ultra-high sensitivity liquid penetrant inspection process and system
US20020189543A1 (en) * 2001-04-10 2002-12-19 Biberger Maximilian A. High pressure processing chamber for semiconductor substrate including flow enhancing features
AU2002352903A1 (en) * 2001-11-21 2003-06-10 University Of Massachusetts Mesoporous materials and methods
US20040016450A1 (en) * 2002-01-25 2004-01-29 Bertram Ronald Thomas Method for reducing the formation of contaminants during supercritical carbon dioxide processes
US6928746B2 (en) * 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
US6924086B1 (en) * 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
WO2003077032A1 (en) 2002-03-04 2003-09-18 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US20040003828A1 (en) * 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
WO2003082486A1 (en) * 2002-03-22 2003-10-09 Supercritical Systems Inc. Removal of contaminants using supercritical processing
US6653236B2 (en) * 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions
US7341947B2 (en) * 2002-03-29 2008-03-11 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US20040045578A1 (en) * 2002-05-03 2004-03-11 Jackson David P. Method and apparatus for selective treatment of a precision substrate surface
US20040016436A1 (en) * 2002-07-26 2004-01-29 Charles Thomas Adsorbents for smoking articles comprising a non-volatile organic compound applied using a supercritical fluid
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
US6875285B2 (en) * 2003-04-24 2005-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for dampening high pressure impact on porous materials
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
DE102004037902A1 (de) * 2004-08-05 2006-03-16 Robert Bosch Gmbh Verfahren zur Abscheidung einer Anti-Haftungsschicht
US7307019B2 (en) * 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US20060065288A1 (en) * 2004-09-30 2006-03-30 Darko Babic Supercritical fluid processing system having a coating on internal members and a method of using
US7491036B2 (en) * 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060102204A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102590A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry
US20060102591A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method and system for treating a substrate using a supercritical fluid
US20060102208A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited System for removing a residue from a substrate using supercritical carbon dioxide processing
US20060130966A1 (en) * 2004-12-20 2006-06-22 Darko Babic Method and system for flowing a supercritical fluid in a high pressure processing system
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US7434590B2 (en) * 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) * 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060180572A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Removal of post etch residue for a substrate with open metal surfaces
US7291565B2 (en) * 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US20060255012A1 (en) * 2005-05-10 2006-11-16 Gunilla Jacobson Removal of particles from substrate surfaces using supercritical processing
US7789971B2 (en) * 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) * 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US20060283529A1 (en) * 2005-06-17 2006-12-21 Amit Ghosh Apparatus and Method of Producing Net-Shaped Components from Alloy Sheets
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
FR2891656B1 (fr) * 2005-10-03 2009-05-08 Nexans Sa Cable de transmission de donnees et/ou d'energie a revetement ignifuge et procede d'ignifugation d'un tel revetement
US7588995B2 (en) * 2005-11-14 2009-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method to create damage-free porous low-k dielectric films and structures resulting therefrom
US7565220B2 (en) * 2006-09-28 2009-07-21 Lam Research Corporation Targeted data collection architecture
US7814046B2 (en) * 2006-09-29 2010-10-12 Lam Research Corporation Dynamic component-tracking system and methods therefor
US7951723B2 (en) * 2006-10-24 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated etch and supercritical CO2 process and chamber design
CN101772381A (zh) 2007-06-29 2010-07-07 瑞典树木科技公司 利用快速膨胀溶液在固体上制备超疏水表面的方法
CN101459050B (zh) * 2007-12-14 2013-03-27 盛美半导体设备(上海)有限公司 电化学或化学沉积金属层前预浸润晶片表面的方法和装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2853066A1 (de) * 1978-12-08 1980-06-26 August Prof Dipl Phys D Winsel Verfahren zur abdeckung der oberflaeche von insbesondere poroesen pulvern oder poroesen koerpern mit schuetzenden oder schmueckenden schichten
US4582731A (en) * 1983-09-01 1986-04-15 Battelle Memorial Institute Supercritical fluid molecular spray film deposition and powder formation
US4737384A (en) * 1985-11-01 1988-04-12 Allied Corporation Deposition of thin films using supercritical fluids
DE3737455A1 (de) * 1986-11-06 1988-05-19 Westinghouse Electric Corp Einrichtung und verfahren zum erzeugen von farbmustern
US4737984A (en) * 1986-12-01 1988-04-12 Northern Telecom Limited Dial tone detector
US5057342A (en) * 1987-12-21 1991-10-15 Union Carbide Chemicals And Plastics Technology Corporation Methods and apparatus for obtaining a feathered spray when spraying liquids by airless techniques
EP0321607B1 (en) * 1987-12-21 1993-09-22 Union Carbide Corporation Supercritical fluids as diluents in liquid spray application of coatings
US5066522A (en) * 1988-07-14 1991-11-19 Union Carbide Chemicals And Plastics Technology Corporation Supercritical fluids as diluents in liquid spray applications of adhesives
US5108799A (en) * 1988-07-14 1992-04-28 Union Carbide Chemicals & Plastics Technology Corporation Liquid spray application of coatings with supercritical fluids as diluents and spraying from an orifice
KR900001417A (ko) * 1988-07-14 1990-02-27 티모시 엔.비숍 희석제로서 초임계성 유체를 사용하고 오리피스로부터 분무시켜 피복물을 정전기성 액체 분무로 적용하는 방법
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
ES2042110T3 (es) * 1989-03-22 1993-12-01 Union Carbide Chemicals And Plastics Company, Inc. Composiciones precursoras para reavestimiento.
ATE95540T1 (de) * 1989-03-22 1993-10-15 Union Carbide Chem Plastic Vorlaeuferbeschichtungszusammensetzungen.
US5009367A (en) * 1989-03-22 1991-04-23 Union Carbide Chemicals And Plastics Technology Corporation Methods and apparatus for obtaining wider sprays when spraying liquids by airless techniques
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
FR2659870B1 (fr) * 1990-03-23 1993-03-12 Degremont Perfectionnements apportes aux filtres a membranes, pour ultra ou micro-filtration de liquides, notamment d'eau.
US4970093A (en) * 1990-04-12 1990-11-13 University Of Colorado Foundation Chemical deposition methods using supercritical fluid solutions
US5215253A (en) * 1990-08-30 1993-06-01 Nordson Corporation Method and apparatus for forming and dispersing single and multiple phase coating material containing fluid diluent
US5171613A (en) * 1990-09-21 1992-12-15 Union Carbide Chemicals & Plastics Technology Corporation Apparatus and methods for application of coatings with supercritical fluids as diluents by spraying from an orifice
JPH04222662A (ja) * 1990-12-25 1992-08-12 Nippon Steel Chem Co Ltd 固体表面へのポリマー皮膜形成方法
US5197800A (en) * 1991-06-28 1993-03-30 Nordson Corporation Method for forming coating material formulations substantially comprised of a saturated resin rich phase
JP3101367B2 (ja) * 1991-09-09 2000-10-23 三菱製紙株式会社 剥離用シートおよびその製造方法

Also Published As

Publication number Publication date
DE69225299T2 (de) 1998-12-17
US5403621A (en) 1995-04-04
DE69225299D1 (de) 1998-06-04
EP0546452A1 (en) 1993-06-16
CA2079629A1 (en) 1993-06-13
JPH05345985A (ja) 1993-12-27
MX9207221A (es) 1993-12-01
EP0546452B1 (en) 1998-04-29

Similar Documents

Publication Publication Date Title
KR930019861A (ko) 조밀상 기체를 이용한 코팅 방법
KR920000967A (ko) 질화 규소막의 형성방법
KR900013597A (ko) 기판 처리 방법 및 그 장치
MX172932B (es) Composicion y metodo para depurar hidrocarburos
ATE208228T1 (de) Membranvergütung und porenverkleinerung unter verwendung von ozonunterstütztem chemischem abscheiden aus der dampfphase an grenzflächen
JPS56830A (en) Surface treatment of acrylic resin molded product
NO308812B1 (no) FremgangsmÕte som muliggjør transport i et rør av et fluid inneholdende i det minst gassformige og/eller væskeformige hydrokarboner og vann, under forhold hvor det kan dannes hydrater; samt anvendelse av fremgangsmÕten
KR920007102A (ko) 플라즈마 에칭 방법
Stegemeier et al. Interfacial tension of the methane-normal decane system
EP0248224A3 (en) Mass for removing by chemisorption homogeneous dissolved mixtures, particularly oxygen, from gases or liquids
Sagert et al. Surface viscosities at high pressure gas-liquid interfaces
Granero-Porati et al. Temporal organization in a morphogenetic field
KR950003196A (ko) 액체 인듐 원
SE7701134L (sv) Forfarande och anordning for sleckning av sadan brinnande gas, som bildats av en flytande gas
JPS5234669A (en) Gaseous phase growing apparatus of semiconductor
BR7506766A (pt) Aparelho para contato controlado de gas e liquido,processo para contato continuo de liquido e gas,e processo para contato continuo de liquido contendo bod com gas contendo oxigenio
Gottlieb et al. External-degrees-of-freedom parameter in the UNIFAC-FV model. Comments
KR930021590A (ko) 안정화된 141b
DE69708134D1 (de) Herstellungsverfahren eines geschlossenen, kontrastmittel enhaltenden behälters
KR970023807A (ko) 화학 기계적 연마 시스템내의 중심부 연마 장치 및 방법
BR8105700A (pt) Porcesso e dispositivo para dotarcalibradamente um gas de suporte com pequenas concentracoes de um gas agressivo
HUP9900583A2 (hu) Mágneses folyadékkezelő készülék, főleg folyadékok mágnesestéren belüli oxigéndúsítására
ES257298A3 (es) Un procedimiento para la aplicaciën de siliconas en recubrimientos
KR850002780A (ko) 도막형성장치
JPS51126470A (en) Fixing method of end of cord-shaped article wound on cooled body

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application