KR950003196A - 액체 인듐 원 - Google Patents

액체 인듐 원 Download PDF

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Publication number
KR950003196A
KR950003196A KR1019940013089A KR19940013089A KR950003196A KR 950003196 A KR950003196 A KR 950003196A KR 1019940013089 A KR1019940013089 A KR 1019940013089A KR 19940013089 A KR19940013089 A KR 19940013089A KR 950003196 A KR950003196 A KR 950003196A
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KR
South Korea
Prior art keywords
indium
solvent
solution
trimethyl indium
trimethyl
Prior art date
Application number
KR1019940013089A
Other languages
English (en)
Other versions
KR0144640B1 (ko
Inventor
칸졸리아 라빈드라
휴이 벤자민 씨
Original Assignee
제럴드 케이. 화이트
씨 브이 디, 인코오포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 제럴드 케이. 화이트, 씨 브이 디, 인코오포레이티드 filed Critical 제럴드 케이. 화이트
Publication of KR950003196A publication Critical patent/KR950003196A/ko
Application granted granted Critical
Publication of KR0144640B1 publication Critical patent/KR0144640B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 C3-C5트리알킬 인듐중에 트리메틸 인듐을 용해시키고 그 용액에 비활성 담체 가스의 기포를 통과시킴으로써 증기상 트리메틸 인듐의 균일한 방사선 측정법을 제공하는 것에 관한 것이다.

Description

액체 인듐 원
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 하기 실시예의 증기확된 트리메틸 인듐을 전달하는데 사용되는 장치의 개략도이다.

Claims (5)

  1. C3-C5트리알킬 인듐 용매중에 트리메틸 인듐을 용해하여 용액을 얻고, 그 용액으로부터 트리메틸 인듐을 담체 가스에 비말 동반시키는 것을 포함하는 증기상 트리메틸 인듐을 제공하는 방법.
  2. 제1항에 있어서, 용매가 트리 n-부틸 인듐, 트리이소부틸 인듐 및 그 혼합물들로 이루어진 군으로부터 선택되는 방법.
  3. 제1항에 있어서, 트리메틸 인듐을 상기 용매에 대해 약 0.05이상의 몰비로 용해시키는 방법.
  4. C3-C5트리알킬 인듐 용매 및 그중에 용해된 트리메틸 인듐을 포함하는 용액.
  5. 제4항에 있어서, 트리메틸 인듐이 상기 용매에 대해 약 0.05 이상의 몰비로 용해되어 있는 용액.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940013089A 1993-07-27 1994-06-10 액체 인듐 공급원 KR0144640B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/097,821 1993-07-27
US08/097,821 US5502227A (en) 1993-07-27 1993-07-27 Liquid indium source

Publications (2)

Publication Number Publication Date
KR950003196A true KR950003196A (ko) 1995-02-16
KR0144640B1 KR0144640B1 (ko) 1998-07-15

Family

ID=22265288

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013089A KR0144640B1 (ko) 1993-07-27 1994-06-10 액체 인듐 공급원

Country Status (7)

Country Link
US (1) US5502227A (ko)
EP (1) EP0640610B1 (ko)
JP (1) JP2596713B2 (ko)
KR (1) KR0144640B1 (ko)
CA (1) CA2124052C (ko)
DE (1) DE69424007T2 (ko)
TW (1) TW253888B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783716A (en) * 1996-06-28 1998-07-21 Advanced Technology Materials, Inc. Platinum source compositions for chemical vapor deposition of platinum
EP1335415B1 (en) * 2002-01-17 2005-08-03 Shipley Co. L.L.C. Organoindium compounds for use in chemical vapour deposition processes
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4714422B2 (ja) 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
AU2005245634B2 (en) * 2004-05-20 2010-07-01 Akzo Nobel Chemicals International B.V. Bubbler for constant vapor delivery of a solid chemical
US20060121192A1 (en) * 2004-12-02 2006-06-08 Jurcik Benjamin J Liquid precursor refill system
EP3173507A1 (de) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720560A (en) * 1984-10-25 1988-01-19 Morton Thiokol, Inc. Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition
US4847399A (en) * 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
GB9116381D0 (en) * 1991-07-30 1991-09-11 Shell Int Research Method for deposition of a metal

Also Published As

Publication number Publication date
EP0640610A2 (en) 1995-03-01
JP2596713B2 (ja) 1997-04-02
KR0144640B1 (ko) 1998-07-15
DE69424007D1 (de) 2000-05-25
EP0640610B1 (en) 2000-04-19
JPH07150357A (ja) 1995-06-13
DE69424007T2 (de) 2000-09-14
EP0640610A3 (en) 1995-04-12
TW253888B (ko) 1995-08-11
US5502227A (en) 1996-03-26
CA2124052C (en) 1996-11-26
CA2124052A1 (en) 1995-01-28

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