TW253888B - - Google Patents

Info

Publication number
TW253888B
TW253888B TW083104412A TW83104412A TW253888B TW 253888 B TW253888 B TW 253888B TW 083104412 A TW083104412 A TW 083104412A TW 83104412 A TW83104412 A TW 83104412A TW 253888 B TW253888 B TW 253888B
Authority
TW
Taiwan
Application number
TW083104412A
Original Assignee
Cvd Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cvd Inc filed Critical Cvd Inc
Application granted granted Critical
Publication of TW253888B publication Critical patent/TW253888B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW083104412A 1993-07-27 1994-05-16 TW253888B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/097,821 US5502227A (en) 1993-07-27 1993-07-27 Liquid indium source

Publications (1)

Publication Number Publication Date
TW253888B true TW253888B (zh) 1995-08-11

Family

ID=22265288

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104412A TW253888B (zh) 1993-07-27 1994-05-16

Country Status (7)

Country Link
US (1) US5502227A (zh)
EP (1) EP0640610B1 (zh)
JP (1) JP2596713B2 (zh)
KR (1) KR0144640B1 (zh)
CA (1) CA2124052C (zh)
DE (1) DE69424007T2 (zh)
TW (1) TW253888B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108291301A (zh) * 2015-11-25 2018-07-17 优美科股份公司及两合公司 使用烷基-铟化合物的烃溶液进行金属有机气相沉积的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783716A (en) * 1996-06-28 1998-07-21 Advanced Technology Materials, Inc. Platinum source compositions for chemical vapor deposition of platinum
DE60301152T8 (de) * 2002-01-17 2006-04-27 Shipley Co., L.L.C., Marlborough Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
RU2384652C2 (ru) * 2004-05-20 2010-03-20 Акцо Нобель Н.В. Барботер для постоянной доставки пара твердого химиката
US20060121192A1 (en) * 2004-12-02 2006-06-08 Jurcik Benjamin J Liquid precursor refill system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720560A (en) * 1984-10-25 1988-01-19 Morton Thiokol, Inc. Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition
US4847399A (en) * 1987-01-23 1989-07-11 Morton Thiokol, Inc. Process for preparing or purifying Group III-A organometallic compounds
GB9116381D0 (en) * 1991-07-30 1991-09-11 Shell Int Research Method for deposition of a metal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108291301A (zh) * 2015-11-25 2018-07-17 优美科股份公司及两合公司 使用烷基-铟化合物的烃溶液进行金属有机气相沉积的方法

Also Published As

Publication number Publication date
JP2596713B2 (ja) 1997-04-02
EP0640610A3 (en) 1995-04-12
DE69424007T2 (de) 2000-09-14
JPH07150357A (ja) 1995-06-13
CA2124052C (en) 1996-11-26
KR950003196A (ko) 1995-02-16
EP0640610A2 (en) 1995-03-01
KR0144640B1 (ko) 1998-07-15
EP0640610B1 (en) 2000-04-19
CA2124052A1 (en) 1995-01-28
US5502227A (en) 1996-03-26
DE69424007D1 (de) 2000-05-25

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