KR900013597A - 기판 처리 방법 및 그 장치 - Google Patents

기판 처리 방법 및 그 장치 Download PDF

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Publication number
KR900013597A
KR900013597A KR1019900002291A KR900002291A KR900013597A KR 900013597 A KR900013597 A KR 900013597A KR 1019900002291 A KR1019900002291 A KR 1019900002291A KR 900002291 A KR900002291 A KR 900002291A KR 900013597 A KR900013597 A KR 900013597A
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KR
South Korea
Prior art keywords
substrate
liquid
knife
mixed
shaped member
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KR1019900002291A
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English (en)
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KR0173449B1 (ko
Inventor
프란시스쿠스 마리아 레나르스 아드리안
유레스 반 오에켈 야쿠에스
Original Assignee
프레데릭 얀 스미트
엔.브이.필립스 글로아이람펜파브리켄
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Publication of KR900013597A publication Critical patent/KR900013597A/ko
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Publication of KR0173449B1 publication Critical patent/KR0173449B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)

Abstract

내용 없음

Description

기판 처리 방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 장치의 개략적인 종단면도,
제2도는 라인 Ⅰ-Ⅰ을 따라 취해진 제1도에 도시된 장치의 단면도.

Claims (12)

  1. 기판이 액체를 포함하고 있는 조에 얼마동안 잠기고, 실제로 액체의 전체량이 상기 조에 남아있을 만큼 서서히 상기 조로부터 기판을 건져내는 기판을 처리하는 방법에 있어서, 상기 기판을 상기 액체에서 꺼내면서 곧바로, 액체와 섞일 수 있고 액체와 혼합되었을시에, 상기 액체의 표면 장력보다 낮은 표면 장력을 가진 혼합물을 산출하는 물질의 기판상의 응축하지 않은 증기와 직접 접촉시키는 것을 특징으로 하는 기판 처리 방법.
  2. 제1항에 있어서, 상기 액체와 섞일 수 있는 물질로서, 유기체 용매가 사용되는 것을 특징으로 하는 기판 처리 방법.
  3. 제2항에 있어서, 1g/ℓ보다 더 큰 물의 용해도를 갖고 25와 25,000파스칼간에 놓여진 증기압을 갖는 유기체 용매가 사용되는 것을 특징으로 하는 기판 처리 방법.
  4. 제3항에 있어서, 에틸글리콜, 1-프로판올, 2-프로판올 및 테트라 히드로퓨란을 포함하는 그룹으로부터 유기체 용매가 사용되는 것을 특징으로 하는 기판 처리 방법.
  5. 제4항에 있어서, 유기체 용매로서 2-프로판올이 사용되는 것을 특징으로 하는 기판 처리 방법.
  6. 선행항중 어느 한항에 있어서, 기판은 증기가 캐리어 가스와 혼합되는 증기와 접촉되고 상기 혼합물이 상기 액체위로 통과되는 것을 특징으로 하는 기판 처리 방법.
  7. 선행항중 어느 한항에 있어서, 기판이 상기 액체로부터 들어올려질시에, 상기 액체를 최종적으로 벗어나는 기판의 부분은 나이프-형부재에 의해 액체를 벗어날시에 지지되는 것을 특징으로 하는 기판 처리 방법.
  8. 제7항에 있어서, 상기기판이 상기 나이프-형 부재에 의해 상기 액체로부터 들어올려지는 것을 특징으로 하는 기판 처리 방법.
  9. 제1항에 청구된 방법을 실행하기 위해서 상기 액체로부터 기판을 들어올리는 리프팅 부재와 상기 액체 위쪽의 건조 기판을 죄어 고정시키는 수단이 갖추어진 장치에 있어서, 상기 장치는, 상기 액체를 벗어날시에, 상기 기판과같이 액체와 혼합되었을시에 상기 액체의 표면 장력보다 더 낮은 표면 장력을 가진 혼합물을 산출하는 액체와 섞일 수 있는 물질의 기판상의 응축하지 않은 증기와 직접 접촉시키는 배출구 노즐을 가진 가스 리드가 갖추어진 것을 특징으로 하는 기판 처리 실행장치.
  10. 제9항에 있어서, 상기 액체로부터 기판이 벗어날시에, 상기 액체를 최종적으로 벗어나는 상기 기판의 부분에 기판을 지지하는 나이프-형 부재가 갖추어진 것을 특징으로 하는 기판 처리 실행장치.
  11. 제10항에 있어서, 기판이 상기 나이프-형 부재에 의해 상기 액체로부터 들어올려지도록 상기 나이프-형 부재가 상기 리프팅 부재위에 제공되는 것을 특징으로 하는 기판 처리 실행장치.
  12. 제11항에 있어서, 상기 나이프-형 부재가 석영 유리로 만들어지고 100°보다 적은 청각을 갖는 것을 특징으로 하는 기판 처리 실행장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900002291A 1989-02-27 1990-02-23 기판 처리방법 및 그 장치 KR0173449B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8900480 1989-02-27
NL8900480A NL8900480A (nl) 1989-02-27 1989-02-27 Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.

Publications (2)

Publication Number Publication Date
KR900013597A true KR900013597A (ko) 1990-09-06
KR0173449B1 KR0173449B1 (ko) 1999-04-01

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US (4) US6012472A (ko)
EP (1) EP0385536B1 (ko)
JP (1) JP3009699B2 (ko)
KR (1) KR0173449B1 (ko)
CN (1) CN1023450C (ko)
DE (1) DE69012373T2 (ko)
NL (1) NL8900480A (ko)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH06103686B2 (ja) * 1989-11-24 1994-12-14 シー エフ エム テクノロジーズ，インコーポレイテッド 表面乾燥処理方法および装置
NL9000484A (nl) * 1990-03-01 1991-10-01 Philips Nv Werkwijze voor het in een centrifuge verwijderen van een vloeistof van een oppervlak van een substraat.
JPH04215878A (ja) * 1990-03-14 1992-08-06 Seiko Epson Corp 液中ジェット洗浄方法及び洗浄装置
ATE258084T1 (de) 1991-10-04 2004-02-15 Cfmt Inc Superreinigung von komplizierten mikroteilchen
JP2639771B2 (ja) * 1991-11-14 1997-08-13 大日本スクリーン製造株式会社 基板の洗浄・乾燥処理方法並びにその処理装置
JPH06196472A (ja) * 1992-12-22 1994-07-15 Soltec:Kk ウェットエッチング方法及びウェット洗浄方法
JP3347814B2 (ja) * 1993-05-17 2002-11-20 大日本スクリーン製造株式会社 基板の洗浄・乾燥処理方法並びにその処理装置
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
US5911837A (en) * 1993-07-16 1999-06-15 Legacy Systems, Inc. Process for treatment of semiconductor wafers in a fluid
KR100354953B1 (ko) † 1993-09-22 2002-12-11 레가시 시스템즈, 인코포레이티드 반도체웨이퍼건조방법및장치
JP2888409B2 (ja) * 1993-12-14 1999-05-10 信越半導体株式会社 ウェーハ洗浄槽
DE4413077C2 (de) * 1994-04-15 1997-02-06 Steag Micro Tech Gmbh Verfahren und Vorrichtung zur chemischen Behandlung von Substraten
DE4428169C2 (de) * 1994-08-09 1996-07-11 Steag Micro Tech Gmbh Träger für Substrate
US5634978A (en) * 1994-11-14 1997-06-03 Yieldup International Ultra-low particle semiconductor method
US5849104A (en) * 1996-09-19 1998-12-15 Yieldup International Method and apparatus for cleaning wafers using multiple tanks
US5571337A (en) * 1994-11-14 1996-11-05 Yieldup International Method for cleaning and drying a semiconductor wafer
US5958146A (en) * 1994-11-14 1999-09-28 Yieldup International Ultra-low particle semiconductor cleaner using heated fluids
US5772784A (en) * 1994-11-14 1998-06-30 Yieldup International Ultra-low particle semiconductor cleaner
DE19549487C2 (de) * 1995-01-05 2000-11-16 Steag Micro Tech Gmbh Anlage zur chemischen Naßbehandlung
DE19546990C2 (de) * 1995-01-05 1997-07-03 Steag Micro Tech Gmbh Anlage zur chemischen Naßbehandlung
JPH08211592A (ja) * 1995-02-07 1996-08-20 Nikon Corp 洗浄乾燥方法及び洗浄乾燥装置
DE19517573C2 (de) * 1995-05-12 2000-11-02 Steag Micro Tech Gmbh Verfahren und Vorrichtung zur Naßbehandlung von Substraten in einem Behälter
US5714203A (en) * 1995-08-23 1998-02-03 Ictop Entwicklungs Gmbh Procedure for the drying of silicon
DE19531031C2 (de) * 1995-08-23 1997-08-21 Ictop Entwicklungsgesellschaft Verfahren zum Trocknen von Silizium
DE19541436C2 (de) * 1995-11-07 1998-10-08 Steag Micro Tech Gmbh Anlage zur Behandlung von Gegenständen in einem Prozeßtank
TW310452B (ko) 1995-12-07 1997-07-11 Tokyo Electron Co Ltd
TW322605B (ko) * 1995-12-07 1997-12-11 Tokyo Electron Co Ltd
EP0784336A3 (en) 1995-12-15 1998-05-13 Texas Instruments Incorporated Improvements in or relating to the fabrication and processing of semiconductor devices
DE19800584C2 (de) * 1998-01-09 2002-06-20 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19613620C2 (de) * 1996-04-04 1998-04-16 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19637875C2 (de) 1996-04-17 1999-07-22 Steag Micro Tech Gmbh Anlage zur Naßbehandlung von Substraten
DE19703646C2 (de) * 1996-04-22 1998-04-09 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Behandeln von Substraten in einem Fluid-Behälter
ATE288622T1 (de) 1996-06-24 2005-02-15 Imec Inter Uni Micro Electr Vorrichtung und verfahren zur nassreinigung oder zum ätzen eines flachen substrats
US6045624A (en) * 1996-09-27 2000-04-04 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
DE19640848C2 (de) * 1996-10-03 1998-07-16 Steag Microtech Gmbh Pliezhaus Verfahren und Vorrichtung zum Behandeln von Substraten
DE19706072C1 (de) 1997-02-17 1998-06-04 Steag Microtech Gmbh Pliezhaus Vorrichtung und Verfahren zum Behandeln von Substraten in einem Fluid-Behälter
US6350322B1 (en) 1997-03-21 2002-02-26 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6164297A (en) * 1997-06-13 2000-12-26 Tokyo Electron Limited Cleaning and drying apparatus for objects to be processed
JP3151613B2 (ja) 1997-06-17 2001-04-03 東京エレクトロン株式会社 洗浄・乾燥処理方法及びその装置
JPH1126423A (ja) * 1997-07-09 1999-01-29 Sugai:Kk 半導体ウエハ等の処理方法並びにその処理装置
KR100707107B1 (ko) * 1997-07-17 2007-12-27 동경 엘렉트론 주식회사 세정.건조처리방법및장치
US5884640A (en) * 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
US6261377B1 (en) * 1997-09-24 2001-07-17 Interuniversitair Microelektronica Centrum (Imec) Method of removing particles and a liquid from a surface of substrate
US5807439A (en) * 1997-09-29 1998-09-15 Siemens Aktiengesellschaft Apparatus and method for improved washing and drying of semiconductor wafers
JP3043709B2 (ja) 1997-11-19 2000-05-22 株式会社カイジョー 基板の乾燥装置
JPH11176798A (ja) * 1997-12-08 1999-07-02 Toshiba Corp 基板洗浄・乾燥装置及び方法
TW444291B (en) * 1997-12-10 2001-07-01 Cfmt Inc Wet processing methods for the manufacture of electronic components
DE19800949A1 (de) * 1998-01-13 1999-07-15 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen eines Gegenstandes
DE19800951A1 (de) * 1998-01-13 1999-07-15 Steag Micro Tech Gmbh Vorrichtung zur Naßbehandlung von Substraten
DE19802579A1 (de) * 1998-01-23 1999-07-29 Steag Micro Tech Gmbh Vorrichtung und Verfahren zur Behandlung von Substraten
KR100452542B1 (ko) 1998-04-14 2004-10-12 가부시끼가이샤가이죠 세정물 건조장치 및 건조방법
US6047717A (en) * 1998-04-29 2000-04-11 Scd Mountain View, Inc. Mandrel device and method for hard disks
US6273100B1 (en) 1998-08-27 2001-08-14 Micron Technology, Inc. Surface cleaning apparatus and method
US6571806B2 (en) 1998-09-04 2003-06-03 Komag, Inc. Method for drying a substrate
US6216709B1 (en) 1998-09-04 2001-04-17 Komag, Inc. Method for drying a substrate
DE19859468C2 (de) * 1998-12-22 2002-01-17 Steag Micro Tech Gmbh Vorrichtung zum Behandeln und Handhaben von Substraten
US6328814B1 (en) 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates
US6495215B1 (en) 1999-05-26 2002-12-17 Tokyo Electron Limited Method and apparatus for processing substrate
DE19924302A1 (de) * 1999-05-27 2000-12-07 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Trocknen von Substraten
US6192600B1 (en) * 1999-09-09 2001-02-27 Semitool, Inc. Thermocapillary dryer
US6355111B1 (en) 1999-11-24 2002-03-12 International Business Machines Corporation Method for removing contaminants from a workpiece using a chemically reactive additive
DE19960241A1 (de) * 1999-12-14 2001-07-05 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Behandeln von Substraten
US6293616B1 (en) * 2000-01-10 2001-09-25 Ford Global Technologies, Inc. Modular rail for roof and windshield
JP2001291698A (ja) * 2000-04-10 2001-10-19 Nec Corp 処理装置および処理方法
US7364625B2 (en) * 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
EP1168422B1 (en) * 2000-06-27 2009-12-16 Imec Method and apparatus for liquid-treating and drying a substrate
US6508014B2 (en) 2001-02-16 2003-01-21 International Business Machines Corporation Method of drying substrates
DE10122669A1 (de) * 2001-05-10 2002-12-12 Mattson Wet Products Gmbh Vorrichtung zum Nassreinigen von scheibenförmigen Substraten
US7513062B2 (en) * 2001-11-02 2009-04-07 Applied Materials, Inc. Single wafer dryer and drying methods
CN101499413B (zh) * 2001-11-02 2011-05-04 应用材料股份有限公司 单个晶片的干燥装置和干燥方法
US20030136429A1 (en) * 2002-01-22 2003-07-24 Semitool, Inc. Vapor cleaning and liquid rinsing process vessel
DE10215283B4 (de) * 2002-04-05 2004-06-03 Astec Halbleitertechnologie Gmbh Vorrichtung zur Aufnahme von Substraten
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
KR100480606B1 (ko) * 2002-08-01 2005-04-06 삼성전자주식회사 아이피에이 증기 건조 방식을 이용한 반도체 웨이퍼 건조장치
US6875289B2 (en) * 2002-09-13 2005-04-05 Fsi International, Inc. Semiconductor wafer cleaning systems and methods
US20040129297A1 (en) * 2003-01-03 2004-07-08 Settlemyer Kenneth T. Method and system for reducing effects of halfpitch wafer spacing during wet processes
KR20050015411A (ko) * 2003-08-05 2005-02-21 삼성전자주식회사 세정 장치 및 이를 이용한 세정 방법
US6977215B2 (en) * 2003-10-28 2005-12-20 Nec Electronics America, Inc. Tungsten plug corrosion prevention method using gas sparged water
DE10359320A1 (de) * 2003-12-17 2005-07-21 Scp Germany Gmbh Vorrichtung und Verfahren zum Trocknen von Substraten
JP2006080420A (ja) * 2004-09-13 2006-03-23 Ses Co Ltd 基板処理法及び基板処理装置
DE102004058386B4 (de) * 2004-12-03 2007-06-21 Alfing Montagetechnik Gmbh Vorrichtung und Verfahren zum Unterkühlen von Montageteilen
DE102004060980A1 (de) * 2004-12-17 2006-07-06 Infineon Technologies Ag Vorrichtung und Verfahren zur Trocknung von Substraten
US8070884B2 (en) * 2005-04-01 2011-12-06 Fsi International, Inc. Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance
TWI364524B (en) * 2005-05-13 2012-05-21 Lam Res Ag Method for drying a surface
US8216663B2 (en) * 2005-06-28 2012-07-10 Canaan Precision Co., Ltd. Surface-modified member, surface-treating process and apparatus therefor
US8635784B2 (en) 2005-10-04 2014-01-28 Applied Materials, Inc. Methods and apparatus for drying a substrate
US8388762B2 (en) * 2007-05-02 2013-03-05 Lam Research Corporation Substrate cleaning technique employing multi-phase solution
US20110195579A1 (en) * 2010-02-11 2011-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe-line draining during wet-bench etch and clean processes
US20120305193A1 (en) 2011-06-03 2012-12-06 Arthur Keigler Parallel single substrate processing agitation module
US9396912B2 (en) * 2011-10-31 2016-07-19 Lam Research Corporation Methods for mixed acid cleaning of showerhead electrodes
DE102013102545A1 (de) 2012-04-27 2013-10-31 Awt Advanced Wet Technologies Gmbh Verfahren zum Behandeln von zumindest einem Substrat in einem flüssigen Medium
DE102014207266A1 (de) 2014-04-15 2015-10-15 Siltronic Ag Verfahren zum Trocknen von scheibenförmigen Substraten undScheibenhalter zur Durchführung des Verfahrens
JP6489524B2 (ja) * 2015-08-18 2019-03-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7241568B2 (ja) * 2019-03-04 2023-03-17 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP7281925B2 (ja) * 2019-03-07 2023-05-26 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
CN110544654B (zh) * 2019-08-27 2022-04-15 西安奕斯伟材料科技有限公司 一种硅片处理装置和处理方法
EP3840022B1 (en) 2019-12-18 2022-10-05 Siltronic AG Improved device for drying semiconductor substrates
EP3840023B1 (en) 2019-12-18 2022-10-19 Siltronic AG Improved device for drying semiconductor substrates
EP3840021B1 (en) 2019-12-18 2022-10-19 Siltronic AG Improved device for drying semiconductor substrates

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463774A (en) * 1983-01-28 1984-08-07 The Boeing Company Fuselage-mounted valve for condensate drainage and cabin-air pressurization
JPS60223130A (ja) * 1984-04-19 1985-11-07 Sharp Corp 基板の洗滌乾燥方法及びその装置
JPH0673352B2 (ja) * 1984-05-18 1994-09-14 松下電器産業株式会社 高圧ジェット洗浄方法
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4911761A (en) * 1984-05-21 1990-03-27 Cfm Technologies Research Associates Process and apparatus for drying surfaces
US4778532A (en) * 1985-06-24 1988-10-18 Cfm Technologies Limited Partnership Process and apparatus for treating wafers with process fluids
US4577650A (en) * 1984-05-21 1986-03-25 Mcconnell Christopher F Vessel and system for treating wafers with fluids
JPS6263422A (ja) * 1985-09-13 1987-03-20 Toshiba Ceramics Co Ltd シリコンウエ−ハ処理用治具
US4746397A (en) * 1986-01-17 1988-05-24 Matsushita Electric Industrial Co., Ltd. Treatment method for plate-shaped substrate
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
JPH0789547B2 (ja) * 1986-07-02 1995-09-27 松下電器産業株式会社 乾燥方法
JPS6315048U (ko) * 1986-07-16 1988-02-01
JPS6327576A (ja) * 1986-07-22 1988-02-05 Toshiba Ceramics Co Ltd 研磨プレ−ト用接着剤
NL8601939A (nl) * 1986-07-28 1988-02-16 Philips Nv Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat.
JPS6356921A (ja) * 1986-08-28 1988-03-11 Tokyo Ohka Kogyo Co Ltd 基板の処理方法
JPH0695514B2 (ja) * 1986-12-25 1994-11-24 株式会社トクヤマ 乾燥方法
JPS63182818A (ja) * 1987-01-26 1988-07-28 Hitachi Ltd 乾燥装置
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4828751A (en) * 1987-08-28 1989-05-09 Pcr, Inc. Solvent composition for cleaning silicon wafers
US4902350A (en) * 1987-09-09 1990-02-20 Robert F. Orr Method for rinsing, cleaning and drying silicon wafers
US5129955A (en) * 1989-01-11 1992-07-14 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.

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JPH02291128A (ja) 1990-11-30
US6170495B1 (en) 2001-01-09
US6012472A (en) 2000-01-11
JP3009699B2 (ja) 2000-02-14
US6139645A (en) 2000-10-31
KR0173449B1 (ko) 1999-04-01
CN1023450C (zh) 1994-01-12
CN1045539A (zh) 1990-09-26
DE69012373D1 (de) 1994-10-20
EP0385536B1 (en) 1994-09-14
EP0385536A1 (en) 1990-09-05
DE69012373T2 (de) 1995-04-20
US6533872B1 (en) 2003-03-18
NL8900480A (nl) 1990-09-17

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