ATE288622T1 - Vorrichtung und verfahren zur nassreinigung oder zum ätzen eines flachen substrats - Google Patents

Vorrichtung und verfahren zur nassreinigung oder zum ätzen eines flachen substrats

Info

Publication number
ATE288622T1
ATE288622T1 AT97870087T AT97870087T ATE288622T1 AT E288622 T1 ATE288622 T1 AT E288622T1 AT 97870087 T AT97870087 T AT 97870087T AT 97870087 T AT97870087 T AT 97870087T AT E288622 T1 ATE288622 T1 AT E288622T1
Authority
AT
Austria
Prior art keywords
etching
liquid
tank
wet cleaning
cleaning
Prior art date
Application number
AT97870087T
Other languages
English (en)
Inventor
Marc Meuris
Paul Mertens
Marc Heyns
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP96870162A external-priority patent/EP0849772A1/de
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE288622T1 publication Critical patent/ATE288622T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Liquid Crystal (AREA)
  • Cleaning In General (AREA)
AT97870087T 1996-06-24 1997-06-23 Vorrichtung und verfahren zur nassreinigung oder zum ätzen eines flachen substrats ATE288622T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US2006096P 1996-06-24 1996-06-24
US2037396P 1996-06-25 1996-06-25
EP96870162A EP0849772A1 (de) 1996-12-20 1996-12-20 Vorrichtung und Verfahren zum Nassreinigen oder Ätzen von flächigen Substraten

Publications (1)

Publication Number Publication Date
ATE288622T1 true ATE288622T1 (de) 2005-02-15

Family

ID=27237899

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97870087T ATE288622T1 (de) 1996-06-24 1997-06-23 Vorrichtung und verfahren zur nassreinigung oder zum ätzen eines flachen substrats

Country Status (5)

Country Link
US (3) US6247481B1 (de)
JP (2) JP4421686B2 (de)
KR (1) KR100495441B1 (de)
AT (1) ATE288622T1 (de)
DE (1) DE69732392T8 (de)

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US10074057B2 (en) * 2004-05-21 2018-09-11 Pressco Technology Inc. Graphical re-inspection user setup interface
DE102004032659B4 (de) * 2004-07-01 2008-10-30 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum chemischen oder elektrolytischen Behandeln von Behandlungsgut sowie die Verwendung der Vorrichtung
US8070884B2 (en) * 2005-04-01 2011-12-06 Fsi International, Inc. Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance
DE102008016431B4 (de) * 2008-03-31 2010-06-02 Advanced Micro Devices, Inc., Sunnyvale Metalldeckschicht mit erhöhtem Elektrodenpotential für kupferbasierte Metallgebiete in Halbleiterbauelementen sowie Verfahren zu ihrer Herstellung
KR101286545B1 (ko) * 2008-09-23 2013-07-17 엘지디스플레이 주식회사 세정 장치
US8844602B2 (en) * 2008-11-21 2014-09-30 Sumitomo Electric Industries, Ltd. Method of processing terminus of optical fiber and terminus processing tool
DE102008061521B4 (de) * 2008-12-10 2011-12-08 Siltronic Ag Verfahren zur Behandlung einer Halbleiterscheibe
US8324686B2 (en) * 2009-01-16 2012-12-04 Infineon Technologies Austria Ag Semiconductor device and method for manufacturing
TWI460305B (zh) * 2010-11-30 2014-11-11 Ind Tech Res Inst 化學水浴法鍍膜設備
US8677929B2 (en) * 2010-12-29 2014-03-25 Intevac, Inc. Method and apparatus for masking solar cell substrates for deposition
CN104045242B (zh) * 2014-06-26 2016-02-24 深圳市华星光电技术有限公司 玻璃基板的蚀刻方法及蚀刻浸泡装置
SG11202001663XA (en) * 2017-09-08 2020-03-30 Acm Research Shanghai Inc Method and apparatus for cleaning semiconductor wafer
JP7222721B2 (ja) * 2019-01-17 2023-02-15 株式会社ディスコ 洗浄機構

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Also Published As

Publication number Publication date
DE69732392T8 (de) 2006-04-27
DE69732392T2 (de) 2006-01-26
KR100495441B1 (ko) 2005-10-04
KR19980063342A (ko) 1998-10-07
JP4421686B2 (ja) 2010-02-24
US6530385B2 (en) 2003-03-11
JPH10180196A (ja) 1998-07-07
DE69732392D1 (de) 2005-03-10
US20030145878A1 (en) 2003-08-07
JP4597176B2 (ja) 2010-12-15
JP2008103712A (ja) 2008-05-01
US6247481B1 (en) 2001-06-19
US20010000575A1 (en) 2001-05-03

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