JP2008103712A - 平坦な基材を湿式でクリーニングまたはエッチングするための装置および方法 - Google Patents
平坦な基材を湿式でクリーニングまたはエッチングするための装置および方法 Download PDFInfo
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- JP2008103712A JP2008103712A JP2007259579A JP2007259579A JP2008103712A JP 2008103712 A JP2008103712 A JP 2008103712A JP 2007259579 A JP2007259579 A JP 2007259579A JP 2007259579 A JP2007259579 A JP 2007259579A JP 2008103712 A JP2008103712 A JP 2008103712A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Abstract
【解決手段】基材9の導入口5及び導出口7を有するタンク3を含み、前記基材9を湿式クリーニングまたはエッチングするための装置1。このタンクはクリーニング液11を収容しており、気体環境13内に設置される。導入出口の少なくとも一方はタンク側壁に形成され、液面15よりも下方に位置する。タンク3内には、気体環境13内の圧力よりも低い圧力のガスで満たされた部分25が液11の上方に存在してもよい。本発明の方法は、前記装置を利用して、クリーニングまたはエッチング液に、液面よりも低いレベルで基材を導入、導出するステップから成る。
【選択図】図1
Description
な基材など、いずれも製造過程でクリーニングまたはエッチングを必要とする平坦な基材の製造に係わる。
−気体環境内から前記タンクへ、前記液の表面よりも下方のレベルにおいて前記基材を導入し;
−前記液が前記タンクから漏出するのを防止しながらタンクから前記気体環境へ前記基材を導出する
工程から成る。
Claims (13)
- 平坦な基材のための開口を有するタンクを含み、前記タンクが少なくとも1種類のクリーニングまたはエッチング液を収容して環境内に設置され、前記開口が液面よりも下方に位置している、前記基材の湿式クリーニングまたはエッチングのための装置において、前記環境が主としてガスまたは混合ガスから成り、前記装置が前記タンクの開口から前記環境へ前記液が漏出するのを防止する手段を含み、
前記手段が、前記液の上方に位置し、前記環境内の圧力よりも低圧のガスまたは混合ガスで満たされる前記タンクの第2部分から成ることを特徴とする装置。 - 前記手段が、タンクの前記第2部分と連通してガスを吸引することにより、前記第2部分内のガス圧を低下させ、さらには開口付近の液圧を低下させるポンプを含むことを特徴とする請求項1に記載の装置。
- 前記手段が、毛管作用を助長して開口付近の液圧を低下させるためのタンク内部に設けた隔壁から成ることを特徴とする請求項1または請求項2に記載の装置。
- 前記液が、化学薬品希釈液であることを特徴とする請求項1〜3のいずれか1項に記載の装置。
- 前記手段が、前記開口に向かってガス流を送るためにタンクの外部に設けた手段から成ることを特徴とする請求項1〜4のいずれか1項に記載の装置。
- 前記ガス流が、混合ガス流中の1成分としてN2を含むことを特徴とする請求項5に記載の装置。
- 前記ガス流が、前記開口において前記基材の表面で凝縮しない蒸気から成り、前記蒸気を、前記液と混合可能であり、かつ前記液と共に前記液単独の表面張力よりも低い表面張力を有する混合液を形成する物質の群から選択したことを特徴とする請求項5に記載の装置。
- 前記蒸気が、IPAを含むことを特徴とする請求項7に記載の装置。
- 前記装置が、導入口及び導出口を有し、前記導入口が前記タンクの第1側壁に形成され、前記導出口が前記タンクの第2側壁に形成され、前記基材がほぼ水平に前記装置を通過することを特徴とする請求項1〜8のいずれか1項に記載の装置。
- 前記装置が、導入口及び導出口を有し、前記導入口が前記タンクの底壁に形成され、前記導出口が前記タンクの頂壁に形成され、前記基材がほぼ垂直に前記装置を通過することを特徴とする請求項1〜9のいずれか1項に記載の装置。
- 前記平坦な基材が、半導体ウェーハであり、前記環境がクリーンルームであることを特徴とする請求項1〜10のいずれか1項に記載の装置。
- 少なくとも1種類のクリーニングまたはエッチング液で満たされているタンク内で平坦な基材を湿式でクリーニングまたはエッチングする方法において、前記方法が、
−気体環境内から前記タンクへ、前記液の表面よりも下方のレベルにおいて前記基材を導入し;
−前記液が前記タンクから漏出するのを防止しながらタンクから前記気体環境へ前記基材を導出する
工程から成ることを特徴とする前記方法。 - タンクの外側から前記開口へ向かってガス流を送ることにより、前記ガス流で基材を乾燥させ、タンクから液が漏出するのを防止することを特徴とする請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2006096P | 1996-06-24 | 1996-06-24 | |
US2037396P | 1996-06-25 | 1996-06-25 | |
EP96870162A EP0849772A1 (en) | 1996-12-20 | 1996-12-20 | Apparatus and method for wet cleaning or etching of flat substrates |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16630297A Division JP4421686B2 (ja) | 1996-06-24 | 1997-06-23 | 平坦な基材を湿式でクリーニングまたはエッチングするための装置および方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008103712A true JP2008103712A (ja) | 2008-05-01 |
JP4597176B2 JP4597176B2 (ja) | 2010-12-15 |
Family
ID=27237899
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16630297A Expired - Lifetime JP4421686B2 (ja) | 1996-06-24 | 1997-06-23 | 平坦な基材を湿式でクリーニングまたはエッチングするための装置および方法 |
JP2007259579A Expired - Lifetime JP4597176B2 (ja) | 1996-06-24 | 2007-10-03 | 平坦な基材を湿式でクリーニングまたはエッチングするための装置および方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP16630297A Expired - Lifetime JP4421686B2 (ja) | 1996-06-24 | 1997-06-23 | 平坦な基材を湿式でクリーニングまたはエッチングするための装置および方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US6247481B1 (ja) |
JP (2) | JP4421686B2 (ja) |
KR (1) | KR100495441B1 (ja) |
AT (1) | ATE288622T1 (ja) |
DE (1) | DE69732392T8 (ja) |
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DE102004032659B4 (de) * | 2004-07-01 | 2008-10-30 | Atotech Deutschland Gmbh | Vorrichtung und Verfahren zum chemischen oder elektrolytischen Behandeln von Behandlungsgut sowie die Verwendung der Vorrichtung |
US8070884B2 (en) * | 2005-04-01 | 2011-12-06 | Fsi International, Inc. | Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance |
DE102008016431B4 (de) * | 2008-03-31 | 2010-06-02 | Advanced Micro Devices, Inc., Sunnyvale | Metalldeckschicht mit erhöhtem Elektrodenpotential für kupferbasierte Metallgebiete in Halbleiterbauelementen sowie Verfahren zu ihrer Herstellung |
KR101286545B1 (ko) * | 2008-09-23 | 2013-07-17 | 엘지디스플레이 주식회사 | 세정 장치 |
WO2010058475A1 (ja) * | 2008-11-21 | 2010-05-27 | 住友電気工業株式会社 | 光ファイバの端末加工方法および端末加工部材 |
DE102008061521B4 (de) * | 2008-12-10 | 2011-12-08 | Siltronic Ag | Verfahren zur Behandlung einer Halbleiterscheibe |
US8324686B2 (en) * | 2009-01-16 | 2012-12-04 | Infineon Technologies Austria Ag | Semiconductor device and method for manufacturing |
TWI460305B (zh) * | 2010-11-30 | 2014-11-11 | Ind Tech Res Inst | 化學水浴法鍍膜設備 |
US8677929B2 (en) * | 2010-12-29 | 2014-03-25 | Intevac, Inc. | Method and apparatus for masking solar cell substrates for deposition |
CN104045242B (zh) * | 2014-06-26 | 2016-02-24 | 深圳市华星光电技术有限公司 | 玻璃基板的蚀刻方法及蚀刻浸泡装置 |
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Also Published As
Publication number | Publication date |
---|---|
KR100495441B1 (ko) | 2005-10-04 |
JPH10180196A (ja) | 1998-07-07 |
DE69732392T2 (de) | 2006-01-26 |
US20030145878A1 (en) | 2003-08-07 |
DE69732392T8 (de) | 2006-04-27 |
ATE288622T1 (de) | 2005-02-15 |
KR19980063342A (ko) | 1998-10-07 |
US6247481B1 (en) | 2001-06-19 |
US6530385B2 (en) | 2003-03-11 |
US20010000575A1 (en) | 2001-05-03 |
JP4597176B2 (ja) | 2010-12-15 |
DE69732392D1 (de) | 2005-03-10 |
JP4421686B2 (ja) | 2010-02-24 |
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