DE69723699D1 - Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des Verfahrens - Google Patents
Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des VerfahrensInfo
- Publication number
- DE69723699D1 DE69723699D1 DE69723699T DE69723699T DE69723699D1 DE 69723699 D1 DE69723699 D1 DE 69723699D1 DE 69723699 T DE69723699 T DE 69723699T DE 69723699 T DE69723699 T DE 69723699T DE 69723699 D1 DE69723699 D1 DE 69723699D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- electrodes
- cleaning
- carrying
- counter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Physical Vapour Deposition (AREA)
- Transplanting Machines (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97203136A EP0908535B1 (de) | 1997-10-08 | 1997-10-08 | Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des Verfahrens |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69723699D1 true DE69723699D1 (de) | 2003-08-28 |
DE69723699T2 DE69723699T2 (de) | 2004-06-17 |
Family
ID=8228812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69723699T Expired - Lifetime DE69723699T2 (de) | 1997-10-08 | 1997-10-08 | Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des Verfahrens |
Country Status (8)
Country | Link |
---|---|
US (1) | US6231727B1 (de) |
EP (1) | EP0908535B1 (de) |
JP (1) | JP4004152B2 (de) |
AT (1) | ATE245717T1 (de) |
DE (1) | DE69723699T2 (de) |
DK (1) | DK0908535T3 (de) |
ES (1) | ES2203748T3 (de) |
PT (1) | PT908535E (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000320464A (ja) * | 1999-05-10 | 2000-11-21 | Saginomiya Seisakusho Inc | 容量可変型圧縮機用制御弁 |
WO2001029278A1 (en) * | 1999-10-15 | 2001-04-26 | Advanced Energy Industries, Inc. | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
CN1323409C (zh) * | 2001-06-08 | 2007-06-27 | 松下电器产业株式会社 | 两面金属化膜制造方法以及使用它的金属化膜电容器 |
EP1783814A1 (de) * | 2005-11-07 | 2007-05-09 | ARCELOR France | Verfahren und Einrichtung zum Reinigen eines Metallbandes mittels Magnetron-Zerstäubung |
EP1783815A1 (de) * | 2005-11-07 | 2007-05-09 | ARCELOR France | Verfahren und Anlage zum Ätzen eines Metallbandes mittels Vakuum-Magnetron-Zerstäubung |
US20110233049A1 (en) * | 2007-08-30 | 2011-09-29 | Koninklijke Philips Electronics N.V. | Sputtering system |
JP5810462B2 (ja) * | 2011-07-21 | 2015-11-11 | 地方独立行政法人山口県産業技術センター | プラズマ処理装置及び基材の表面処理方法 |
WO2019003809A1 (ja) * | 2017-06-30 | 2019-01-03 | 凸版印刷株式会社 | フィルムの処理方法及びフィルムの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2867912A (en) * | 1956-05-11 | 1959-01-13 | Horace Dawson | Method for the decontamination of metal foils |
JPS60126832A (ja) * | 1983-12-14 | 1985-07-06 | Hitachi Ltd | ドライエツチング方法および装置 |
JPS62274080A (ja) * | 1986-05-21 | 1987-11-28 | Hitachi Ltd | プラズマ処理方法 |
US5283087A (en) * | 1988-02-05 | 1994-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
US5178739A (en) * | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
JPH0768620B2 (ja) * | 1991-09-30 | 1995-07-26 | 中外炉工業株式会社 | 金属ストリップの表面清浄化装置 |
-
1997
- 1997-10-08 DK DK97203136T patent/DK0908535T3/da active
- 1997-10-08 EP EP97203136A patent/EP0908535B1/de not_active Expired - Lifetime
- 1997-10-08 DE DE69723699T patent/DE69723699T2/de not_active Expired - Lifetime
- 1997-10-08 AT AT97203136T patent/ATE245717T1/de active
- 1997-10-08 ES ES97203136T patent/ES2203748T3/es not_active Expired - Lifetime
- 1997-10-08 PT PT97203136T patent/PT908535E/pt unknown
-
1998
- 1998-10-02 US US09/165,300 patent/US6231727B1/en not_active Expired - Lifetime
- 1998-10-08 JP JP28710798A patent/JP4004152B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4004152B2 (ja) | 2007-11-07 |
PT908535E (pt) | 2003-11-28 |
EP0908535B1 (de) | 2003-07-23 |
US6231727B1 (en) | 2001-05-15 |
ES2203748T3 (es) | 2004-04-16 |
DK0908535T3 (da) | 2003-11-10 |
DE69723699T2 (de) | 2004-06-17 |
JPH11209886A (ja) | 1999-08-03 |
ATE245717T1 (de) | 2003-08-15 |
EP0908535A1 (de) | 1999-04-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |