EP3840022B1 - Improved device for drying semiconductor substrates - Google Patents
Improved device for drying semiconductor substrates Download PDFInfo
- Publication number
- EP3840022B1 EP3840022B1 EP19217351.6A EP19217351A EP3840022B1 EP 3840022 B1 EP3840022 B1 EP 3840022B1 EP 19217351 A EP19217351 A EP 19217351A EP 3840022 B1 EP3840022 B1 EP 3840022B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- less
- upper edge
- drainage part
- wedge
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 15
- 238000001035 drying Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title description 10
- 238000000034 method Methods 0.000 claims description 6
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
- 239000002245 particle Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
Definitions
- the object of the invention is a device for use in drying disc-shaped semiconductor substrates.
- the invention relates to a device being used to treat semiconductor wafers, in which the latter are immersed for some time in a bath containing a liquid and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath.
- a method of this kind may be used, for example, in the manufacture of electric circuits on all kinds of substrates, such as, for example, integrated circuits on semiconductor wafers (for example of silicon), drives for liquid crystal displays on transparent plates of glass or quartz or circuits on plates of synthetic material (circuit boards).
- the method may also be used in the manufacture of shadow masks for television picture tubes or in the manufacture of CD or VLP records.
- the substrates are immersed many times for some time in a bath containing a liquid, for example in galvanic baths for deposition of metals, in etching baths for etching patterns into metal layers or into semiconductor material, in development baths for developing exposed photo lacquer layers and in rinsing baths for cleaning the substrates. After treatment in the liquid baths, the substrates are taken from the liquid and are dried. The substrates can be taken from the liquid in that they are lifted or withdrawn from the liquid, but of course also in that the liquid is caused to flow out of the bath.
- the semiconductor wafer While being taken from the bath the semiconductor wafer reside on a device is used to hold the semiconductor wafer in place. During this process, the problem can arise that residues of liquid remain at the edge of the substrate. This can lead to unwanted particles on the edge of the substrate, which are later on effecting the quality of the semiconductor wafer.
- a device and a method to improve the quality of cleaning in respect to remaining particles of the semiconductor wafer is given in DE 10 2014 207 266 A1 . However, using this there are still particles left that reduce the quality of the semiconductor wafers.
- Document US 2007/157951 A1 discloses a processing system comprising a rinsing and drying vessel configured for supporting a batch of substrates or wafers to be rinsed and dried.
- Figure 1 illustrates a device (disc holder) according to the present invention.
- the device comprises an elongated body (1), which tapers upwards to form a wedge (A) having an angle ⁇ between two surfaces and an upper edge.
- the upper edge is suitable for the disc-shaped substrates to rest on.
- the two surfaces of the wedge comprise more than one hole (2) each forming channels, which extend to a lower drainage part (B) of the elongated body.
- the holes are placed in that way that the upper edge is not interrupted by the holes.
- the angle ⁇ between the two surfaces is larger than 30° and smaller than 90°. More preferably, it is smaller than 70° and larger than 50°.
- the material used for the device comprises ceramic filled polyetheretherketone (CFM PEEK).
- the upper edge has a curvature radius of more than 0.1mm and less than 1mm, more preferably more than 0.1mm and less than 0.4mm.
- the two surfaces are hydrophobic.
- the channels have a diameter more than 0.5mm and less than 3mm.
- the drainage part (B) comprises a channel having a diameter more than 3mm and less than 8mm.
- the drainage part (B) has a length (L2) of more than 20mm and less than 26mm.
- the wedge (A) has a height (L1) of more than 4mm and less than 10mm.
Description
- The object of the invention is a device for use in drying disc-shaped semiconductor substrates.
- The invention relates to a device being used to treat semiconductor wafers, in which the latter are immersed for some time in a bath containing a liquid and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath.
- A method of this kind may be used, for example, in the manufacture of electric circuits on all kinds of substrates, such as, for example, integrated circuits on semiconductor wafers (for example of silicon), drives for liquid crystal displays on transparent plates of glass or quartz or circuits on plates of synthetic material (circuit boards). The method may also be used in the manufacture of shadow masks for television picture tubes or in the manufacture of CD or VLP records. In all these cases, the substrates are immersed many times for some time in a bath containing a liquid, for example in galvanic baths for deposition of metals, in etching baths for etching patterns into metal layers or into semiconductor material, in development baths for developing exposed photo lacquer layers and in rinsing baths for cleaning the substrates. After treatment in the liquid baths, the substrates are taken from the liquid and are dried. The substrates can be taken from the liquid in that they are lifted or withdrawn from the liquid, but of course also in that the liquid is caused to flow out of the bath.
- While being taken from the bath the semiconductor wafer reside on a device is used to hold the semiconductor wafer in place. During this process, the problem can arise that residues of liquid remain at the edge of the substrate. This can lead to unwanted particles on the edge of the substrate, which are later on effecting the quality of the semiconductor wafer.
- The physical effect utilized thereby are described in
CN1045539 A (EP 03 855 36 A1 ), as is an apparatus which is to some extent suitable for conduction of the method. - A device and a method to improve the quality of cleaning in respect to remaining particles of the semiconductor wafer is given in
DE 10 2014 207 266 A1 . However, using this there are still particles left that reduce the quality of the semiconductor wafers. - Document
US 2007/157951 A1 discloses a processing system comprising a rinsing and drying vessel configured for supporting a batch of substrates or wafers to be rinsed and dried. - It is an object of the present invention to improve said device, and more particularly to show how the number of particles, which are found on the dried substrates, can be reduced by using this device.
-
Figure 1 illustrates a device (disc holder) according to the present invention. - The device comprises an elongated body (1), which tapers upwards to form a wedge (A) having an angle α between two surfaces and an upper edge. The upper edge is suitable for the disc-shaped substrates to rest on. Preferably, the two surfaces of the wedge comprise more than one hole (2) each forming channels, which extend to a lower drainage part (B) of the elongated body. The holes are placed in that way that the upper edge is not interrupted by the holes.
- Preferably, the angle α between the two surfaces is larger than 30° and smaller than 90°. More preferably, it is smaller than 70° and larger than 50°.
- Preferably, the material used for the device comprises ceramic filled polyetheretherketone (CFM PEEK).
- Preferably, the upper edge has a curvature radius of more than 0.1mm and less than 1mm, more preferably more than 0.1mm and less than 0.4mm.
- Preferably, the two surfaces are hydrophobic.
- Preferably, the channels have a diameter more than 0.5mm and less than 3mm. Preferably, the drainage part (B) comprises a channel having a diameter more than 3mm and less than 8mm.
- Preferably, the drainage part (B) has a length (L2) of more than 20mm and less than 26mm.
- Preferably, the wedge (A) has a height (L1) of more than 4mm and less than 10mm.
-
- A
- Wedge region of the elongated body
- B
- Drainage part of the elongated body
- L1
- Height of the wedge formed on top of the elongated body
- L2
- Height of the drainage part
- 1
- Elongated body
- 2
- Hole(s)
- α
- Opening angle of the wedge, angle between two surfaces and an upper edge
Claims (9)
- Device for drying disc-shaped substrates comprisingan elongated body (1),which tapers upwards to form a wedge (A) having an angle α between two surfaces and an upper edgewherein the upper edge is suitable for holding the disc-shaped substrates, characterized in that the two surfaces comprise more than one hole (2) each forming channels, which extend to a lower drainage part (B) of the elongated body.
- Device according to claim 1, characterized in that
the angle α is larger than 30° and smaller than 90°, preferably larger than 50° and smaller than 70°. - Device according to claim 1 or claim 2, characterized in that
the material used for the device comprises ceramic filled polyetheretherketone (CFM PEEK). - Device according to claim 1 to claim 3, characterized in that
the upper edge has a curvature radius of more than 0.1 mm and less than 1 mm. - Device according to claim 1 to claim 4, characterized in that
the channels have a diameter more than 0.5mm and less than 3mm. - Device according to claim 1 to claim 5, characterized in that
the drainage part (B) comprises a channel having a diameter more than 3mm and less than 8mm. - Device according to claim 1 to claim 6, characterized in that
the drainage part (B) has a length (L2) of more than 20mm and less than 26mm. - Device according to claim 1 to claim 7, characterized in that
the wedge (A) has a height (L1) of more than 4mm and less than 10mm. - Method of drying a disc-shaped substrate using a device according to any of claims 1 to 8.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19217351.6A EP3840022B1 (en) | 2019-12-18 | 2019-12-18 | Improved device for drying semiconductor substrates |
PCT/EP2020/083659 WO2021121903A1 (en) | 2019-12-18 | 2020-11-27 | Improved device for drying semiconductor substrates |
CN202080088363.9A CN114830315A (en) | 2019-12-18 | 2020-11-27 | Improved apparatus for drying semiconductor substrates |
US17/785,063 US20230008740A1 (en) | 2019-12-18 | 2020-11-27 | Device for drying semiconductor substrates |
JP2022537668A JP7407943B2 (en) | 2019-12-18 | 2020-11-27 | Improved equipment for drying semiconductor substrates |
KR1020227024109A KR102653286B1 (en) | 2019-12-18 | 2020-11-27 | Improved device for drying semiconductor substrates |
TW109143660A TWI753694B (en) | 2019-12-18 | 2020-12-10 | Improved device for drying semiconductor substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19217351.6A EP3840022B1 (en) | 2019-12-18 | 2019-12-18 | Improved device for drying semiconductor substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3840022A1 EP3840022A1 (en) | 2021-06-23 |
EP3840022B1 true EP3840022B1 (en) | 2022-10-05 |
Family
ID=69055638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19217351.6A Active EP3840022B1 (en) | 2019-12-18 | 2019-12-18 | Improved device for drying semiconductor substrates |
Country Status (7)
Country | Link |
---|---|
US (1) | US20230008740A1 (en) |
EP (1) | EP3840022B1 (en) |
JP (1) | JP7407943B2 (en) |
KR (1) | KR102653286B1 (en) |
CN (1) | CN114830315A (en) |
TW (1) | TWI753694B (en) |
WO (1) | WO2021121903A1 (en) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8900480A (en) | 1989-02-27 | 1990-09-17 | Philips Nv | METHOD AND APPARATUS FOR DRYING SUBSTRATES AFTER TREATMENT IN A LIQUID |
JPH07263390A (en) * | 1994-03-22 | 1995-10-13 | Dainippon Screen Mfg Co Ltd | Method and device for cleaning and drying substrate |
US6497785B2 (en) * | 2001-01-16 | 2002-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet chemical process tank with improved fluid circulation |
US6907890B2 (en) * | 2002-02-06 | 2005-06-21 | Akrion Llc | Capillary drying of substrates |
KR100678472B1 (en) * | 2005-01-25 | 2007-02-02 | 삼성전자주식회사 | Wafer Guide and Semiconductor Wafer Drying Apparatus Using the Same |
JP5043021B2 (en) * | 2005-10-04 | 2012-10-10 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for drying a substrate |
US20070157951A1 (en) * | 2006-01-06 | 2007-07-12 | Micron Technology, Inc. | Systems and methods for processing microfeature workpieces |
JP4999808B2 (en) * | 2008-09-29 | 2012-08-15 | 東京エレクトロン株式会社 | Substrate processing equipment |
DE102014207266A1 (en) * | 2014-04-15 | 2015-10-15 | Siltronic Ag | Method for drying disc-shaped substrates and disc holders for carrying out the method |
-
2019
- 2019-12-18 EP EP19217351.6A patent/EP3840022B1/en active Active
-
2020
- 2020-11-27 CN CN202080088363.9A patent/CN114830315A/en active Pending
- 2020-11-27 JP JP2022537668A patent/JP7407943B2/en active Active
- 2020-11-27 KR KR1020227024109A patent/KR102653286B1/en active IP Right Grant
- 2020-11-27 WO PCT/EP2020/083659 patent/WO2021121903A1/en active Application Filing
- 2020-11-27 US US17/785,063 patent/US20230008740A1/en active Pending
- 2020-12-10 TW TW109143660A patent/TWI753694B/en active
Also Published As
Publication number | Publication date |
---|---|
JP2023507011A (en) | 2023-02-20 |
CN114830315A (en) | 2022-07-29 |
WO2021121903A1 (en) | 2021-06-24 |
US20230008740A1 (en) | 2023-01-12 |
EP3840022A1 (en) | 2021-06-23 |
KR102653286B1 (en) | 2024-03-29 |
JP7407943B2 (en) | 2024-01-04 |
KR20220114609A (en) | 2022-08-17 |
TWI753694B (en) | 2022-01-21 |
TW202125694A (en) | 2021-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3840022B1 (en) | Improved device for drying semiconductor substrates | |
EP3840021B1 (en) | Improved device for drying semiconductor substrates | |
EP3840023B1 (en) | Improved device for drying semiconductor substrates | |
JPH0521332A (en) | Resist removing device | |
US6576065B1 (en) | Installation and method for chemical treatment of microelectronics wafers | |
KR100363755B1 (en) | Method for treating substrates | |
JP2000100761A (en) | Semiconductor device manufacturing method and apparatus | |
EP0887710A2 (en) | Resist development process | |
JP4059016B2 (en) | Semiconductor substrate cleaning and drying method | |
KR100771097B1 (en) | Method for treating substrate | |
JPS5986147A (en) | Wafer holder | |
JP2002217275A (en) | Vertical boat | |
JPH05102121A (en) | Method and apparatus for cleaning of sheet type | |
KR20050017152A (en) | Wafer cleaner | |
JPH0653200A (en) | Cleaning equipment | |
JP2004281860A (en) | Substrate container, substrate etching method and substrate cleaning method | |
JPS5958836A (en) | Treating device for manufacturing semiconductor device | |
JPH04318929A (en) | Washing method and wet etching method of substrate and device thereof | |
KR20060008360A (en) | Equipment for fabricating semiconductor device | |
KR20100074493A (en) | Dummy wafer and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN PUBLISHED |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20210708 |
|
RBV | Designated contracting states (corrected) |
Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602019020246 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0021670000 Ipc: H01L0021673000 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/67 20060101ALI20211102BHEP Ipc: H01L 21/673 20060101AFI20211102BHEP |
|
INTG | Intention to grant announced |
Effective date: 20211201 |
|
GRAJ | Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted |
Free format text: ORIGINAL CODE: EPIDOSDIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
INTC | Intention to grant announced (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20220325 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 1523285 Country of ref document: AT Kind code of ref document: T Effective date: 20221015 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602019020246 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG9D |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20221005 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 1523285 Country of ref document: AT Kind code of ref document: T Effective date: 20221005 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230206 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230105 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230205 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230106 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602019020246 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20221231 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20221218 Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 |
|
26N | No opposition filed |
Effective date: 20230706 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20221231 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20221218 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20221231 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20221005 Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20221231 Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20221231 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20231214 Year of fee payment: 5 |