JP2004281860A - Substrate container, substrate etching method and substrate cleaning method - Google Patents

Substrate container, substrate etching method and substrate cleaning method Download PDF

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Publication number
JP2004281860A
JP2004281860A JP2003073249A JP2003073249A JP2004281860A JP 2004281860 A JP2004281860 A JP 2004281860A JP 2003073249 A JP2003073249 A JP 2003073249A JP 2003073249 A JP2003073249 A JP 2003073249A JP 2004281860 A JP2004281860 A JP 2004281860A
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Japan
Prior art keywords
wafer
substrate
etching
wafer carrier
holding
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JP2003073249A
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Japanese (ja)
Inventor
Junji Sugiura
淳二 杉浦
Tatsuya Watanabe
達也 渡辺
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Dowa Holdings Co Ltd
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Dowa Mining Co Ltd
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Priority to JP2003073249A priority Critical patent/JP2004281860A/en
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  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer carrier, a method of etching and a method of cleaning by which the nonuniform treatment of a wafer can be improved. <P>SOLUTION: This substrate container 1 is formed with several support grooves 10 in its facing side walls 12 and 13 for supporting edges of the substrates W and contains several substrates W. It is further provided with a support rod 18 for lifting and supporting the center of the inferior part of the several substrates W contained in it. The several substrates W are contained in a substrate container 2 and the substrate container 2 is impregnated with treatment liquid for etching reserved in a treatment bath. The substrates W are etched by the treatment liquid for etching. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は,例えば半導体ウェハ等の基板を複数枚収納する基板収納容器と,基板を処理液に浸漬して処理するバッチ式のエッチング方法及び洗浄方法に関する。
【0002】
【従来の技術】
例えば半導体デバイスの製造プロセスにおいては,半導体ウェハ(以下,「ウェハ」という。)をエッチング処理する工程が行われる。かかるエッチング処理の一例として,複数枚のウェハをウェハキャリアに収納して,エッチング用の処理液を貯留した処理槽にウェハキャリアごと浸漬させる方法が知られている。ウェハキャリアは,ウェハの周縁を保持する保持溝が例えば25個ずつ形成された2個の側壁を備えている。各側壁の25個の保持溝は,所定間隔をあけて並ぶように形成されており,対向する2個の保持溝に1枚のウェハの周縁を挿入して,25枚のウェハを互いに略平行な姿勢で,所定間隔をあけて保持するようになっている。各保持溝の下部は内側に傾斜するように形成されており,ウェハWの下部両側を保持溝の下部によってそれぞれ保持するようになっている。(例えば,特許文献1参照)。また,このようなウェハキャリアは,ウェハの洗浄工程においても使用されており,薬液を貯留した処理槽,リンス液を貯留した処理槽にウェハキャリアごと順次浸漬させて,一連の洗浄処理を行う方法が知られている(例えば,特許文献2参照)。
【0003】
【特許文献1】
特開2001−77073
【特許文献2】
特開2001−257256
【0004】
【発明が解決しようとする課題】
しかしながら,従来のウェハキャリアを使用したエッチング処理や洗浄処理においては,保持溝に挿入するウェハの周縁が十分に処理されず,処理むらが発生する問題があった。そのため,歩留りを向上させることが困難であった。特にエッチング処理においては,エッチングむらによってウェハの表面にオレンジピール状の無数の凹凸が発生する問題があった。
【0005】
従って,本発明の目的は,ウェハの処理むらを改善することができるウェハキャリア,エッチング方法及び洗浄方法を提供することにある。
【0006】
【課題を解決するための手段】
上記課題を解決するために,本発明によれば,対向する側壁に基板の周縁を保持する複数の保持溝をそれぞれ備え,複数の基板を収納する基板収納容器であって,前記基板収納容器に収納された複数枚の基板の下部中央を持ち上げて支持する支持棒を備えることを特徴とする,基板収納容器が提供される。この基板収納容器にあっては,ウェハの下部両側を保持溝に挿入させず,保持溝に挿入する部分を従来よりも少なくして保持できる。さらに,保持溝と基板の周縁との間で処理液が流通しやすくなり,保持溝に挿入した部分を十分に処理できる。従って,処理むらを防止することができる。
【0007】
前記支持棒の上部に,基板の周縁を支持する複数の支持溝を備えることが好ましい。この場合,ウェハの下部が揺れることを防止して,ウェハを確実に保持できる。
【0008】
また,本発明によれば,請求項1又は2に記載の基板収納容器に複数枚の基板を収納し,処理槽に貯留されたエッチング用の処理液に前記基板収納容器を浸漬し,前記エッチング用の処理液によって基板をエッチングすることを特徴とする,基板のエッチング方法が提供される。さらに,請求項1又は2に記載の基板収納容器に複数枚の基板を収納し,処理槽に貯留された洗浄用の処理液に前記基板収納容器を浸漬し,前記洗浄用の処理液によって基板を洗浄することを特徴とする,基板の洗浄方法が提供される。
【0009】
【発明の実施の形態】
以下,本発明の好ましい実施の形態を説明する。図1に示すエッチング処理システム1は,基板としてのウェハWをエッチングするシステムである。エッチング処理システム1は,ウェハWを25枚収納した本発明にかかる基板収納容器としてのウェハキャリア2をエッチング処理システム1に搬入するローダ部(図示せず)と,エッチング用の薬液3を貯留する薬液槽4と,純水5を貯留する水洗槽6と,ウェハWを乾燥させる乾燥処理槽(図示せず)と,ウェハキャリア2をエッチング処理システム1から搬出するアンローダ部(図示せず)を備えている。さらに,ウェハキャリア2をローダ部から薬液槽4,水洗槽6,乾燥処理槽,アンローダ部に順次搬送する搬送装置7を備えている。
【0010】
図2及び図3に示すように,ウェハキャリア2に収納されるウェハWは,薄い略円盤形状をしている。ウェハキャリア2は,内側にウェハWの周縁を保持する保持溝10が25個ずつ形成された対向する2つの側壁12,13と,側壁12,13の正面側に設けられた正面部材14と,側壁12,13の背面側に設けられた背面部材15と,底面部材16を備えており,上部を開口させた略直方体形状に形成されている。側壁12と側壁13との間には,ウェハキャリア2に収納された25枚のウェハWの下部中央を持ち上げて支持する支持棒18が,側壁12,13と略平行に設けられている。ウェハキャリア2の上部は開口となっており,ウェハWを収納する際には,この開口からウェハキャリア2の内部にウェハWを挿入するようになっている。また,底面部材16にも開口が形成されており,ウェハキャリア2を薬液槽4内の薬液3に浸漬させたとき,薬液3が底面部材16の開口からウェハキャリア2の内部に流入しやすいようになっている。
【0011】
各保持溝10は,ウェハキャリア2の上部の開口側と底面部材16との間にスリット状に形成されており,断面がウェハキャリア2の内側に向かって広がるV字型になるように形成されている。各保持溝10の上端は開口しており,この上端からウェハWの周縁を進入させるようになっている。各保持溝10の下部は,底面部材16の開口周縁に向かって内側に傾斜するように形成されており,支持棒18が無い状態としたときに,ウェハWの下部両側を保持溝10の下部によってそれぞれ保持するようになっている。これら25個の保持溝10は,正面部材14と背面部材15との間で所定間隔をおいて互いに平行に並ぶように,各側壁12,13にそれぞれ設けられている。なお,側壁12に設けられた保持溝10の間隔と,側壁13に設けられた保持溝10の間隔は,互いに同じ大きさである。
【0012】
図3に示すように,支持棒18は,側壁12と側壁13の間のほぼ中央に配置されており,ウェハキャリア2の上部の開口と底面部材16との間の中央よりも下方,例えば,底面部材16から約2cm程度の高さに配置されている。支持棒18の両端は,正面部材14と背面部材15にそれぞれ固着されている。支持棒18の上面には,ウェハWの周縁を挿入させる支持溝20が25個形成されている。各支持溝20は,側壁12又は側壁13側からみた断面が下方から上方に向かって広がるV字型になるように形成されている。即ち,ウェハWの表面側と裏面側の各周縁を支持溝20の2個の斜面にそれぞれ当接させるようになっている。これにより,ウェハWの下部が揺れることを防止して,ウェハWを確実に支持することができる。25個の支持溝20は,正面部材14と背面部材15との間で所定間隔をおいて並ぶように配置されている。なお,支持溝20の間隔は,各側壁12,13に設けられた保持溝10の間隔と同じ大きさとなっている。
【0013】
図2に示すように,側壁12と側壁13の各上部には,それぞれフィン22,23が外側に向かって突出するように設けられている。ウェハキャリア2を搬送するときは,図1に示すように,フィン22,23を搬送装置7で保持するようになっている。
【0014】
図1に示すように,薬液槽4は上部が開口となっており,内部に薬液3を貯留して,上部からウェハキャリア2を浸漬させるようになっている。水洗槽6は上部が開口となっており,内部にリンス用の純水5を貯留して,上部からウェハキャリア2を浸漬させるようになっている。
【0015】
搬送装置7は,2本の搬送用アーム25,26と,2本の搬送用アーム25,26を回転自在に支持する支持部27とを備えている。2本の搬送用アーム25,26は,支持部27内に備えた図示しない開閉機構によってそれぞれ回転させられ,搬送用アーム25,26の各下端が開閉するようになっている。また,搬送装置7を鉛直方向に直線移動及び水平方向に直線移動させる図示しない移動機構が備えられている。
【0016】
次に,以上のように構成されたエッチング処理システム1を用いたウェハWのエッチング工程について説明する。エッチング処理システム1にウェハキャリア2を搬入する前に,予め,ウェハキャリア2に25枚のウェハWを収納する。各ウェハWの両側を側壁12,13の各保持溝10に上端からそれぞれ挿入し,ウェハWの下部中央が支持溝20に当接するまで,ウェハWをウェハキャリア2内に進入させる。こうして,ウェハWの両側が側壁12,13の各保持溝10によってそれぞれ保持され,ウェハWの下部中央が支持溝20によって支持された状態で,ウェハキャリア2内にウェハWが収納される。ウェハWの下部中央は支持溝20によって底面部材16から持ち上げられて支持され,例えば,底面部材16から約2cm程度上方の高さに配置される。ウェハWの下部両側は保持溝10の下部からそれぞれ持ち上げられた状態となる。この場合,保持溝10の下部によってウェハWの下部両側を保持していた従来のウェハキャリアよりも,保持溝10に挿入される部分の表面積が少なくなる。側壁12,13の各保持溝10,支持溝20には,ウェハWの周縁が1つずつ挿入され,25枚のウェハWは,正面部材14と背面部材15との間で,隣り合うウェハWの表面と裏面とを対向させた状態で,所定間隔をおいて互いに平行に並ぶように収納される。
【0017】
このように25枚のウェハWを収納したウェハキャリア2を図示しない搬送機構によってエッチング処理システム1のローダ部(図示せず)に載置する。そして,搬送装置7を図示しない移動機構によってローダ部に水平移動させ,搬送用アーム25,26の先端を開いた状態で,ローダ部上のウェハキャリア2の上方から下降させる。次に,搬送用アーム25,26の先端を閉じてフィン22,23の下面にそれぞれ当接させた状態で,搬送装置7を上昇させる。こうして,ウェハキャリア2を搬送用アーム25,26によって保持して持ち上げる。
【0018】
続いて,搬送装置7を水平移動させて,予め薬液3が貯留された薬液槽4の上方にウェハキャリア2を搬送し,搬送装置7を下降させ,ウェハキャリア2を薬液槽4の開口から薬液槽4内の薬液3に浸漬させる。ウェハキャリア2を薬液槽4内の薬液3に浸漬させる際,ウェハキャリア2の底面部材16に形成された開口からウェハキャリア2の内部に薬液3が流入して,ウェハキャリア2の内部に収納されたウェハWが下端から薬液3に浸漬していく。
【0019】
ウェハキャリア2全体を薬液槽4内の薬液3に浸漬させたら,所定時間ウェハキャリア2を薬液3に浸漬させたままにして,ウェハWの表面を薬液3によってエッチング処理する。
【0020】
ウェハキャリア2に収納されたウェハWは,側壁12,13の各保持溝10によって両側が保持されているので,薬液処理中,ウェハWが正面部材14側や背面部材15側に向かってずれたり,揺れたりすることが無い。また,ウェハWは支持溝20によって下部中央が支持されているので,ウェハWの下部が揺れたり,落下することが無い。
【0021】
また,ウェハキャリア2に収納されたウェハWは,側壁12,13の各保持溝10と支持溝20に挿入されている部分の表面積が,従来のウェハキャリアで側壁の各保持溝に挿入される部分の表面積よりも少ないので,ウェハWの周縁が薬液3に接触しやすく,効果的にエッチングされる。さらに,ウェハWの下部両側が保持溝10の下部より上方に配置されているので,薬液3が保持溝10の下部から保持溝10とウェハWの周縁との間に流入し易く,あるいは,保持溝10とウェハWの周縁との間の薬液3が保持溝10の下部から流出し易い。即ち,保持溝10とウェハWの周縁との間で薬液3が滞留することを防止でき,保持溝10とウェハWの周縁との間で薬液3が効果的に流通する。従って,保持溝10に挿入されている部分が薬液3に十分に接触して,効果的にエッチングされる。また,支持溝20に挿入されている部分は少なく,支持溝20とウェハWの周縁との間で薬液3が滞留することはなく,支持溝20とウェハWの周縁との間で薬液3が効果的に流通する。従って,支持溝20に挿入されている部分が薬液3に十分に接触して,効果的にエッチングされる。このように,保持溝10や支持溝20に挿入される部分を少なくするとともに,保持溝10や支持溝20に薬液3が効果的に流通するようにしたことにより,ウェハWの周縁が確実にエッチングされる。また,ウェハWの中央部と周縁との間でエッチングの量に差が生じること,即ち,エッチングの処理むらが発生することを防止できる。
【0022】
所定時間経過後,ウェハキャリア2を搬送用アーム25,26によって保持した搬送装置7を上昇させ,ウェハキャリア2を薬液3から引き上げ,薬液槽4の開口から薬液槽4の上方に移動させる。そして,搬送装置7を水平移動させ,予め純水5が貯留された水洗槽6の上方にウェハキャリア2を搬送し,搬送装置7を下降させ,ウェハキャリア2を水洗槽6の開口から水洗槽6内の純水5に浸漬させる。ウェハキャリア2を水洗槽6内の純水5に浸漬させる際,ウェハキャリア2の下部に形成された開口からウェハキャリア2の内部に純水5が流入して,ウェハキャリア2の内部に収納されたウェハWが下端から純水5に浸漬していく。こうして,ウェハWを純水5に浸漬させて水洗し,ウェハWに付着した薬液5を除去する。
【0023】
ウェハキャリア2に収納されたウェハWは,2個の保持溝10によって両側が保持されているので,水洗処理中も,ウェハWが正面部材14側や背面部材15側に向かってずれたり,揺れたりすることが無い。また,ウェハWは支持溝20によって下部中央が支持されているので,ウェハWの下部が揺れたり,落下することが無い。
【0024】
また,ウェハキャリア2に収納されたウェハWは,側壁12,13の各保持溝10と支持溝20に挿入されている部分の表面積が,従来のウェハキャリアで側壁の各保持溝に挿入される部分の表面積よりも少ないので,ウェハWの周縁が純水5に接触しやすく,効果的に水洗される。さらに,ウェハWの下部両側が保持溝10の下部より上方に配置されているので,純水5が保持溝10の下部から保持溝10とウェハWの周縁との間に流入し易く,あるいは,保持溝10とウェハWの周縁との間の純水5が保持溝10の下部から流出し易い。即ち,保持溝10とウェハWの周縁との間で純水5が滞留することを防止でき,保持溝10とウェハWの周縁との間で純水5が効果的に流通する。従って,保持溝10に挿入されている部分が純水5に十分に接触して水洗され,保持溝10に挿入されている部分から薬液3や塵埃等の異物を確実に洗い流すことができる。また,支持溝20に挿入されている部分は少なく,支持溝20とウェハWの周縁との間で純水5が滞留することはなく,支持溝20とウェハWの周縁との間で純水5が効果的に流通する。従って,支持溝20に挿入されている部分が純水5に十分に接触して水洗され,支持溝20に挿入されている部分から薬液3や塵埃等の異物を確実に洗い流すことができる。このように,保持溝10や支持溝20に挿入される部分を少なくするとともに,保持溝10や支持溝20に純水5が効果的に流通するようにしたことにより,ウェハWの周縁が十分に水洗され,ウェハWから薬液3や塵埃等の異物を確実に洗い流すことができる。
【0025】
また,保持溝10とウェハWの周縁との間で純水5が効果的に流通するので,保持溝10に純水5が十分に接触して,保持溝10から薬液3や塵埃等の異物を確実に洗い流すことができる。支持溝20とウェハWの周縁との間で純水5が効果的に流通するので,支持溝20に純水5が十分に接触して,支持溝20から薬液3や塵埃等の異物を確実に洗い流すことができる。このように,保持溝10と支持溝20を十分に水洗し,薬液処理後のウェハキャリア2から薬液3や塵埃等の異物を確実に洗い流すことにより,ウェハWに薬液3や塵埃等の異物が再付着することを防止でき,処理の信頼性を高めることができる。
【0026】
所定時間経過後,ウェハキャリア2を搬送用アーム25,26によって保持した搬送装置7を上昇させ,ウェハキャリア2を純水5から引き上げ,水洗槽6の開口から水洗槽6の上方に移動させる。そして,搬送装置7を水平移動,下降させ,乾燥処理槽(図示せず)にウェハキャリア2を搬送し,ウェハキャリア2及びウェハWを乾燥させる。
【0027】
乾燥処理においても,保持溝10とウェハWの周縁との間で乾燥用処理流体が効果的に流通するので,保持溝10に挿入されている部分と保持溝10に乾燥用処理流体が十分に接触して,保持溝10に挿入されている部分と保持溝10を確実に乾燥させることができる。また,支持溝20とウェハWの周縁との間で乾燥用処理流体が効果的に流通するので,支持溝20に挿入されている部分と支持溝20に乾燥用処理流体が十分に接触して,支持溝20に挿入されている部分と支持溝20を確実に乾燥させることができる。このように,ウェハキャリア2とウェハWを確実に乾燥させることができる。
【0028】
乾燥処理後,ウェハキャリア2を搬送用アーム25,26によって保持した搬送装置7を上昇させ,ウェハキャリア2を乾燥処理槽から引き上げ,乾燥処理槽の上方に移動させた後,搬送装置7を水平移動,下降させ,ウェハキャリア2をアンローダ部に載置する。そして,図示しない搬送機構によってウェハキャリア2をアンローダ部から搬出する。こうして,エッチング処理システム1における工程が終了する。
【0029】
かかるウェハキャリア2を用いたエッチング処理工程によれば,ウェハキャリア2に収納されたウェハWを支持棒18によって持ち上げて保持する構成としたことにより,側壁12,13の各保持溝10と支持溝20に挿入されている部分の表面積が,従来のウェハキャリアで側壁の各保持溝に挿入される部分の表面積よりも少なくなるので,ウェハWの周縁が薬液3,純水5及び乾燥用処理流体に接触しやすく,効果的にエッチング,水洗,及び乾燥処理を行うことができる。また,保持溝10とウェハWの周縁との間,及び,支持溝20とウェハWの周縁との間で,薬液3,純水5及び乾燥用処理流体が流通しやすいので,保持溝10や支持溝20に挿入された部分を効果的にエッチング,水洗,及び乾燥処理することができる。従って,処理むらを防止でき,歩留りを向上させることができる。
【0030】
以上,本発明の好適な実施の形態の一例を示したが,本発明はここで説明した形態に限定されない。例えば,基板は半導体ウェハに限定されず,その他のLCD基板用ガラスやCD基板,プリント基板,セラミック基板などであっても良い。
【0031】
本実施の形態では,ウェハキャリア2をエッチング液に浸漬させてウェハWをエッチングする工程について説明したが,ウェハキャリア2は,その他の種々の処理液にウェハWを浸漬させて行う工程に使用することができる。例えば,洗浄用の薬液,リンス液にウェハWを順次浸漬させて行う洗浄処理工程に使用して,ウェハWの洗浄処理を効果的に行うことができる。かかるウェハキャリア2を用いた洗浄処理工程によれば,側壁12,13の各保持溝10と支持溝20に挿入される部分の表面積が,従来のウェハキャリアで側壁の各保持溝に挿入される部分の表面積よりも少なくなるので,ウェハWの周縁が洗浄用薬液,リンス液及び乾燥用処理流体に接触しやすく,効果的に薬液処理,リンス処理,及び乾燥処理を行うことができる。また,保持溝10とウェハWの周縁との間,及び,支持溝20とウェハWの周縁との間で,洗浄用薬液,リンス液及び乾燥用処理流体が流通しやすいので,保持溝10や支持溝20に挿入された部分を効果的に薬液処理,リンス処理,及び乾燥処理することができる。従って,ウェハWを確実に洗浄でき,処理むらを防止して,歩留りを向上させることができる。
【0032】
各支持溝20の形状は,断面が下方から上方に向かって広がるV字型になるように形成することとしたが,ウェハWが支持棒18の上面でスライドすることを防止できる形状であれば良く,例えば,断面が一定の幅を有する矩形状であっても良い。
【0033】
(実施例)
本発明にかかるウェハキャリア2にGaAs(ガリウム砒素)のウェハWを収納して,エッチング処理システム1においてエッチングを行った。先ず,アンモニアと過酸化水素を含有するエッチング用の薬液3に浸漬させ,ウェハWの表面を約100μm程度エッチングした。次いで,純水5に浸漬させて水洗し,その後,速やかに乾燥させた。乾燥後,ウェハWの外観を目視して,エッチングむらの有無を確認した。さらに,ウェハWの中心部分と,保持溝10に挿入されていたウェハWの周縁部分について,ダイヤルゲージ測定機(ミツトヨ製)によって厚さをそれぞれ測定して,中心部分の厚さと周縁部分の厚さとの差(厚さむら)を計算した。このようなエッチングむらの確認と厚さむらの計測を乾燥後の5枚のウェハWについてそれぞれ行い,厚さむらの平均値を計算した。なお,厚さむらは周縁部分の複数箇所について計測し,各ウェハWについて計測された最大の厚さむらについて,平均値を計算した。図4は,5枚のウェハWについて各々確認されたエッチングむらの有無と,各々計測された厚さむらの最大値と,厚さむらの最大値の平均値を示した表である。図4に示すように,5枚のウェハWはいずれもエッチングむらが確認されず,厚さむらの平均値は約5.9μmであり,エッチングが良好に行われたことが確認された。図5は,乾燥後に撮影したウェハWの表面の写真である。図5から理解されるように,乾燥後のウェハWの表面は平坦に見られ,エッチングむらは確認されなかった。
【0034】
(比較例)
本発明にかかるウェハキャリア2を用いた処理の効果と比較するため,従来のウェハキャリアを用いて,エッチング処理システム1においてエッチングを行った。先ず,従来のウェハキャリアにGaAs(ガリウム砒素)のウェハWを収納して,アンモニアと過酸化水素を含有するエッチング用の薬液3に浸漬させ,ウェハWの表面を約100μm程度エッチングした。次いで,純水5に浸漬させて水洗し,その後,速やかに乾燥させた。乾燥後,ウェハWの外観を目視して,エッチングむらの有無を確認した。さらに,ウェハWの中心部分と,保持溝に挿入されていたウェハWの周縁部分について,ダイヤルゲージ測定機(ミツトヨ製)によって厚さをそれぞれ測定して,中心部分の厚さと周縁部分の厚さとの差(厚さむら)を計算した。このようなエッチングむらの確認と厚さむらの計測を乾燥後の5枚のウェハWについてそれぞれ行い,厚さむらの平均値を計算した。なお,厚さむらは周縁部分の複数箇所について計測し,各ウェハWについて計測された最大の厚さむらについて,平均値を計算した。図6は,5枚のウェハWについて各々確認されたエッチングむらの有無と,各々計測された厚さむらの最大値と,厚さむらの最大値の平均値を示した表である。図6に示すように,5枚のウェハWはいずれもエッチングむらが確認された。厚さむらの平均値は約11.4μmであり,本発明のウェハキャリア2を用いた処理の結果と比較すると,厚さむらが大きいことが理解される。図7は,乾燥後に撮影したウェハWの表面の写真である。図7に示す乾燥後のウェハWの表面には,丸みのある小さな凹凸が無数に見られ,オレンジピール状にエッチングむらが発生していることがわかる。即ち,従来のウェハキャリアを用いた処理ではウェハWが十分にエッチングされないが,本発明のウェハキャリア2を用いることにより,エッチングむらを防止でき,厚さむらが大幅に改善され,ウェハWが十分にエッチングされることが確認された。
【0035】
【発明の効果】
本発明によれば,基板の周縁に処理液が接触しやすく基板の周縁を効果的に処理できる。また,保持溝と基板の周縁との間,及び,支持溝と基板の周縁との間で処理液が流通しやすいので,保持溝や支持溝に挿入された部分を効果的に処理できる。従って,基板の処理むらを防止でき,歩留りを向上させることができる。
【図面の簡単な説明】
【図1】エッチング処理システムの構成を示す説明図である。
【図2】本実施の形態にかかるウェハキャリアの縦断面図である。
【図3】本実施の形態にかかるウェハキャリアの縦断面図である。
【図4】本発明にかかるウェハキャリアを用いてエッチング,水洗及び乾燥処理を行った5枚のウェハについて,エッチングむらの有無と,厚さむらの測定結果と,厚さむらの平均値を示した表である。
【図5】本発明にかかるウェハキャリアを用いてエッチング,水洗及び乾燥処理を行ったウェハの表面の写真である。
【図6】従来のウェハキャリアを用いてエッチング,水洗及び乾燥処理を行った5枚のウェハについて,エッチングむらの有無と,厚さむらの測定結果と,厚さむらの平均値を示した表である。
【図7】従来のウェハキャリアを用いてエッチング,水洗及び乾燥処理を行ったウェハの表面の写真である。
【符号の説明】
W ウェハ
1 エッチング処理システム
2 ウェハキャリア
4 薬液槽
5 水洗槽
10 保持溝
12,13 側壁
18 支持棒
20 支持溝
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate storage container for storing a plurality of substrates such as semiconductor wafers, and a batch-type etching method and a cleaning method for immersing a substrate in a processing liquid for processing.
[0002]
[Prior art]
For example, in a semiconductor device manufacturing process, a step of etching a semiconductor wafer (hereinafter, referred to as “wafer”) is performed. As an example of such an etching process, a method of accommodating a plurality of wafers in a wafer carrier and immersing the wafer carrier in a processing tank storing a processing solution for etching is known. The wafer carrier has two side walls in which, for example, 25 holding grooves for holding the peripheral edge of the wafer are formed. The 25 holding grooves on each side wall are formed so as to be arranged at predetermined intervals, and the periphery of one wafer is inserted into the two opposing holding grooves, so that the 25 wafers are substantially parallel to each other. It is held in a proper posture at a predetermined interval. The lower part of each holding groove is formed so as to be inclined inward, and both lower parts of the wafer W are respectively held by the lower part of the holding groove. (For example, see Patent Document 1). Further, such a wafer carrier is also used in a wafer cleaning process, and a method of performing a series of cleaning processing by sequentially immersing the wafer carrier together with a processing tank storing a chemical solution and a processing tank storing a rinsing liquid. Is known (for example, see Patent Document 2).
[0003]
[Patent Document 1]
JP-A-2001-77073
[Patent Document 2]
JP 2001-257256 A
[0004]
[Problems to be solved by the invention]
However, in the conventional etching or cleaning using a wafer carrier, there is a problem that the peripheral edge of the wafer inserted into the holding groove is not sufficiently processed, resulting in uneven processing. Therefore, it has been difficult to improve the yield. Particularly, in the etching process, there was a problem that countless irregularities like orange peel were generated on the surface of the wafer due to uneven etching.
[0005]
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a wafer carrier, an etching method, and a cleaning method that can improve processing unevenness of a wafer.
[0006]
[Means for Solving the Problems]
According to an embodiment of the present invention, there is provided a substrate storage container that includes a plurality of holding grooves for holding a peripheral edge of a substrate on opposing side walls, and stores a plurality of substrates. A substrate storage container is provided, comprising a support rod that lifts and supports a lower center of a plurality of stored substrates. In this substrate storage container, both sides of the lower portion of the wafer are not inserted into the holding grooves, and the number of portions to be inserted into the holding grooves can be held smaller than before. Further, the processing liquid easily flows between the holding groove and the peripheral edge of the substrate, and the portion inserted into the holding groove can be sufficiently processed. Therefore, processing unevenness can be prevented.
[0007]
Preferably, a plurality of support grooves for supporting a peripheral edge of the substrate are provided on the support bar. In this case, the lower part of the wafer is prevented from shaking, and the wafer can be reliably held.
[0008]
Further, according to the present invention, a plurality of substrates are stored in the substrate storage container according to claim 1, and the substrate storage container is immersed in a processing solution for etching stored in a processing tank, and the etching is performed. A method for etching a substrate, characterized in that the substrate is etched with a processing solution for the substrate. Further, a plurality of substrates are stored in the substrate storage container according to claim 1 or 2, and the substrate storage container is immersed in a processing solution for cleaning stored in a processing bath, and the substrate is stored in the processing solution for cleaning. And a method of cleaning a substrate, characterized by cleaning a substrate.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described. The etching processing system 1 shown in FIG. 1 is a system for etching a wafer W as a substrate. The etching system 1 stores a loader unit (not shown) for carrying a wafer carrier 2 serving as a substrate storage container according to the present invention containing 25 wafers W into the etching system 1, and stores a chemical solution 3 for etching. A chemical tank 4, a washing tank 6 for storing pure water 5, a drying tank (not shown) for drying the wafer W, and an unloader section (not shown) for carrying the wafer carrier 2 out of the etching processing system 1. Have. Further, a transfer device 7 for transferring the wafer carrier 2 from the loader unit to the chemical tank 4, the washing tank 6, the drying tank, and the unloader unit sequentially is provided.
[0010]
As shown in FIGS. 2 and 3, the wafer W accommodated in the wafer carrier 2 has a thin and substantially disk shape. The wafer carrier 2 includes two opposing side walls 12 and 13 each having therein 25 holding grooves 10 for holding the peripheral edge of the wafer W, a front member 14 provided on the front side of the side walls 12 and 13, A rear member 15 provided on the rear side of the side walls 12 and 13 and a bottom member 16 are provided, and are formed in a substantially rectangular parallelepiped shape having an open top. Between the side walls 12 and 13, a support rod 18 that lifts and supports the lower center of the 25 wafers W stored in the wafer carrier 2 is provided substantially parallel to the side walls 12 and 13. The upper portion of the wafer carrier 2 has an opening, and when the wafer W is stored, the wafer W is inserted into the inside of the wafer carrier 2 from this opening. Also, an opening is formed in the bottom member 16 so that when the wafer carrier 2 is immersed in the chemical solution 3 in the chemical solution tank 4, the chemical solution 3 easily flows into the inside of the wafer carrier 2 from the opening of the bottom member 16. It has become.
[0011]
Each holding groove 10 is formed in a slit shape between the upper opening side of the wafer carrier 2 and the bottom member 16, and is formed so as to have a V-shaped cross section that extends toward the inside of the wafer carrier 2. ing. The upper end of each holding groove 10 is open, and the peripheral edge of the wafer W enters from the upper end. The lower part of each holding groove 10 is formed so as to be inclined inward toward the peripheral edge of the opening of the bottom member 16. Is to be held respectively. These twenty-five holding grooves 10 are provided on each of the side walls 12 and 13 so as to be arranged in parallel with each other at a predetermined interval between the front member 14 and the back member 15. The distance between the holding grooves 10 provided on the side wall 12 and the distance between the holding grooves 10 provided on the side wall 13 are the same.
[0012]
As shown in FIG. 3, the support rod 18 is disposed substantially at the center between the side walls 12 and 13, and is lower than the center between the upper opening of the wafer carrier 2 and the bottom member 16, for example, It is arranged at a height of about 2 cm from the bottom member 16. Both ends of the support rod 18 are fixed to the front member 14 and the back member 15, respectively. On the upper surface of the support rod 18, 25 support grooves 20 for inserting the peripheral edge of the wafer W are formed. Each of the support grooves 20 is formed such that a cross section viewed from the side wall 12 or the side wall 13 side is V-shaped extending upward from below. That is, the respective peripheral edges of the front surface side and the rear surface side of the wafer W are brought into contact with the two slopes of the support groove 20, respectively. Thus, the lower portion of the wafer W can be prevented from swinging, and the wafer W can be reliably supported. The 25 support grooves 20 are arranged at predetermined intervals between the front member 14 and the back member 15. The distance between the support grooves 20 is the same as the distance between the holding grooves 10 provided on the side walls 12 and 13.
[0013]
As shown in FIG. 2, fins 22 and 23 are provided on the upper portions of the side walls 12 and 13, respectively, so as to protrude outward. When the wafer carrier 2 is transferred, the fins 22 and 23 are held by the transfer device 7 as shown in FIG.
[0014]
As shown in FIG. 1, the chemical solution tank 4 has an opening at an upper portion, stores a chemical solution 3 therein, and immerses the wafer carrier 2 from above. The washing tank 6 has an opening at the top, stores pure water 5 for rinsing inside, and immerses the wafer carrier 2 from above.
[0015]
The transfer device 7 includes two transfer arms 25 and 26 and a support 27 that rotatably supports the two transfer arms 25 and 26. The two transfer arms 25 and 26 are rotated by open / close mechanisms (not shown) provided in the support portion 27, and the lower ends of the transfer arms 25 and 26 are opened and closed. Further, a moving mechanism (not shown) for linearly moving the transfer device 7 in the vertical direction and linearly moving in the horizontal direction is provided.
[0016]
Next, an etching process of the wafer W using the etching system 1 configured as described above will be described. Before carrying the wafer carrier 2 into the etching system 1, 25 wafers W are stored in the wafer carrier 2 in advance. Both sides of each wafer W are inserted into the respective holding grooves 10 of the side walls 12 and 13 from the upper end, and the wafer W is advanced into the wafer carrier 2 until the lower center of the wafer W contacts the support groove 20. Thus, both sides of the wafer W are respectively held by the holding grooves 10 of the side walls 12 and 13, and the wafer W is stored in the wafer carrier 2 with the lower center of the wafer W supported by the support groove 20. The lower center of the wafer W is lifted up from the bottom member 16 and supported by the support groove 20, and is disposed at a height of about 2 cm above the bottom member 16, for example. Both lower sides of the wafer W are lifted from the lower part of the holding groove 10, respectively. In this case, the surface area of a portion to be inserted into the holding groove 10 is smaller than that of a conventional wafer carrier in which both sides of the lower portion of the wafer W are held by the lower portion of the holding groove 10. The peripheral edge of the wafer W is inserted into each of the holding grooves 10 and the support grooves 20 of the side walls 12 and 13 one by one. The 25 wafers W Are arranged so as to be parallel to each other at a predetermined interval with the front surface and the rear surface facing each other.
[0017]
The wafer carrier 2 containing the 25 wafers W is placed on a loader unit (not shown) of the etching system 1 by a transfer mechanism (not shown). Then, the transfer device 7 is horizontally moved to the loader unit by a moving mechanism (not shown), and is lowered from above the wafer carrier 2 on the loader unit with the leading ends of the transfer arms 25 and 26 open. Next, the transfer device 7 is raised with the ends of the transfer arms 25 and 26 closed and in contact with the lower surfaces of the fins 22 and 23, respectively. Thus, the wafer carrier 2 is held and lifted by the transfer arms 25 and 26.
[0018]
Subsequently, the transfer device 7 is horizontally moved, the wafer carrier 2 is transferred above the chemical solution tank 4 in which the chemical solution 3 is stored in advance, the transfer device 7 is lowered, and the wafer carrier 2 is moved from the opening of the chemical solution tank 4 to the chemical solution. It is immersed in the chemical solution 3 in the tank 4. When the wafer carrier 2 is immersed in the chemical solution 3 in the chemical solution tank 4, the chemical solution 3 flows into the inside of the wafer carrier 2 from the opening formed in the bottom member 16 of the wafer carrier 2 and is stored inside the wafer carrier 2. The wafer W is immersed in the chemical solution 3 from the lower end.
[0019]
When the entire wafer carrier 2 is immersed in the chemical solution 3 in the chemical solution tank 4, the surface of the wafer W is etched with the chemical solution 3 while the wafer carrier 2 is immersed in the chemical solution 3 for a predetermined time.
[0020]
Since both sides of the wafer W accommodated in the wafer carrier 2 are held by the holding grooves 10 of the side walls 12 and 13, the wafer W may shift toward the front member 14 or the back member 15 during the chemical solution processing. , No shaking. Further, since the lower center of the wafer W is supported by the support groove 20, the lower portion of the wafer W does not shake or drop.
[0021]
Further, the surface area of the portion of the wafer W stored in the wafer carrier 2 inserted into the holding grooves 10 and the support grooves 20 of the side walls 12 and 13 is inserted into each holding groove of the side walls by a conventional wafer carrier. Since it is smaller than the surface area of the portion, the peripheral edge of the wafer W is easily brought into contact with the chemical solution 3 and is effectively etched. Further, since both lower sides of the wafer W are arranged above the lower part of the holding groove 10, the chemical solution 3 easily flows from the lower part of the holding groove 10 to between the holding groove 10 and the peripheral edge of the wafer W, or The chemical solution 3 between the groove 10 and the peripheral edge of the wafer W easily flows out from the lower part of the holding groove 10. That is, the chemical solution 3 can be prevented from staying between the holding groove 10 and the peripheral edge of the wafer W, and the chemical solution 3 can effectively flow between the holding groove 10 and the peripheral edge of the wafer W. Therefore, the portion inserted into the holding groove 10 sufficiently contacts the chemical solution 3 and is effectively etched. In addition, the portion inserted into the support groove 20 is small, and the chemical solution 3 does not stay between the support groove 20 and the peripheral edge of the wafer W, and the chemical solution 3 does not stay between the support groove 20 and the peripheral edge of the wafer W. Distribute effectively. Therefore, the portion inserted into the support groove 20 is sufficiently in contact with the chemical solution 3 and is effectively etched. As described above, the portion inserted into the holding groove 10 and the supporting groove 20 is reduced, and the chemical solution 3 is effectively circulated through the holding groove 10 and the supporting groove 20, so that the peripheral edge of the wafer W is reliably formed. Etched. Further, it is possible to prevent a difference in the amount of etching between the central portion and the peripheral edge of the wafer W, that is, to prevent the occurrence of unevenness in the etching process.
[0022]
After a lapse of a predetermined time, the transfer device 7 holding the wafer carrier 2 by the transfer arms 25 and 26 is raised, the wafer carrier 2 is pulled up from the chemical solution 3, and moved from the opening of the chemical solution tank 4 to above the chemical solution tank 4. Then, the transfer device 7 is moved horizontally, the wafer carrier 2 is transferred above the washing tank 6 in which the pure water 5 is stored in advance, the transfer device 7 is lowered, and the wafer carrier 2 is moved from the opening of the washing tank 6 to the washing tank. 6 is immersed in pure water 5. When the wafer carrier 2 is immersed in the pure water 5 in the washing tank 6, the pure water 5 flows into the inside of the wafer carrier 2 from the opening formed in the lower part of the wafer carrier 2 and is stored inside the wafer carrier 2. The wafer W is immersed in pure water 5 from the lower end. Thus, the wafer W is immersed in the pure water 5 and washed with water to remove the chemical solution 5 attached to the wafer W.
[0023]
Since both sides of the wafer W stored in the wafer carrier 2 are held by the two holding grooves 10, the wafer W shifts or swings toward the front member 14 or the back member 15 even during the washing process. Or not. Further, since the lower center of the wafer W is supported by the support groove 20, the lower portion of the wafer W does not shake or drop.
[0024]
Further, the surface area of the portion of the wafer W stored in the wafer carrier 2 inserted into the holding grooves 10 and the support grooves 20 of the side walls 12 and 13 is inserted into each holding groove of the side walls by a conventional wafer carrier. Since the area is smaller than the surface area of the portion, the peripheral edge of the wafer W is easily brought into contact with the pure water 5 and is effectively washed with water. Furthermore, since both lower sides of the wafer W are arranged above the lower part of the holding groove 10, the pure water 5 easily flows from the lower part of the holding groove 10 to between the holding groove 10 and the periphery of the wafer W, or Pure water 5 between the holding groove 10 and the peripheral edge of the wafer W easily flows out from the lower part of the holding groove 10. That is, the pure water 5 can be prevented from staying between the holding groove 10 and the peripheral edge of the wafer W, and the pure water 5 can effectively flow between the holding groove 10 and the peripheral edge of the wafer W. Therefore, the part inserted into the holding groove 10 is sufficiently contacted with the pure water 5 and is washed with water, and the foreign matter such as the chemical 3 and dust can be reliably washed away from the part inserted into the holding groove 10. Further, a small portion of the pure water 5 is not inserted between the support groove 20 and the peripheral edge of the wafer W, and the pure water 5 does not stay between the support groove 20 and the peripheral edge of the wafer W. 5 circulates effectively. Therefore, the portion inserted into the support groove 20 is sufficiently contacted with the pure water 5 and washed with water, and the foreign matter such as the chemical solution 3 and dust can be reliably washed away from the portion inserted into the support groove 20. As described above, the portion inserted into the holding groove 10 and the supporting groove 20 is reduced, and the pure water 5 is effectively circulated through the holding groove 10 and the supporting groove 20. Thus, foreign substances such as the chemical solution 3 and dust can be reliably washed away from the wafer W.
[0025]
Further, since the pure water 5 is effectively circulated between the holding groove 10 and the peripheral edge of the wafer W, the pure water 5 sufficiently contacts the holding groove 10, and the foreign matter such as the chemical solution 3 and dust comes from the holding groove 10. Can be reliably washed away. Since the pure water 5 effectively flows between the support groove 20 and the peripheral edge of the wafer W, the pure water 5 sufficiently contacts the support groove 20 to reliably remove foreign substances such as the chemical solution 3 and dust from the support groove 20. Can be washed away. As described above, the holding groove 10 and the support groove 20 are sufficiently washed with water, and the foreign matter such as the chemical solution 3 and dust is surely washed out of the wafer carrier 2 after the chemical solution treatment. Redeposition can be prevented, and the reliability of processing can be improved.
[0026]
After a lapse of a predetermined time, the transfer device 7 holding the wafer carrier 2 by the transfer arms 25 and 26 is raised, the wafer carrier 2 is pulled up from the pure water 5, and moved from the opening of the washing tank 6 to above the washing tank 6. Then, the transfer device 7 is moved horizontally and lowered to transfer the wafer carrier 2 to a drying processing tank (not shown), and the wafer carrier 2 and the wafer W are dried.
[0027]
Also in the drying process, the processing fluid for drying flows effectively between the holding groove 10 and the peripheral edge of the wafer W, so that the processing fluid for drying is sufficiently supplied to the portion inserted into the holding groove 10 and the holding groove 10. By contact, the portion inserted into the holding groove 10 and the holding groove 10 can be reliably dried. Further, since the processing fluid for drying effectively flows between the supporting groove 20 and the peripheral edge of the wafer W, the processing fluid for drying sufficiently contacts the portion inserted into the supporting groove 20 and the supporting groove 20. Thus, the portion inserted into the support groove 20 and the support groove 20 can be reliably dried. In this manner, the wafer carrier 2 and the wafer W can be reliably dried.
[0028]
After the drying process, the transfer device 7 holding the wafer carrier 2 by the transfer arms 25 and 26 is lifted, the wafer carrier 2 is pulled up from the drying process tank, and is moved above the drying process bath. The wafer carrier 2 is moved and lowered, and the wafer carrier 2 is placed on the unloader section. Then, the wafer carrier 2 is unloaded from the unloader unit by a transfer mechanism (not shown). Thus, the steps in the etching system 1 are completed.
[0029]
According to the etching process using the wafer carrier 2, since the wafer W stored in the wafer carrier 2 is lifted and held by the support rod 18, each of the holding grooves 10 of the side walls 12 and 13 and the support groove are formed. Since the surface area of the portion inserted into the holding wafer 20 is smaller than the surface area of the portion inserted into each holding groove of the side wall in the conventional wafer carrier, the peripheral edge of the wafer W is formed of the chemical 3, pure water 5, and the processing fluid for drying. It can be easily contacted, and can be effectively etched, washed and dried. In addition, the chemical 3, pure water 5, and processing fluid for drying easily flow between the holding groove 10 and the periphery of the wafer W and between the support groove 20 and the periphery of the wafer W. The portion inserted into the support groove 20 can be effectively etched, washed and dried. Therefore, processing unevenness can be prevented, and the yield can be improved.
[0030]
As described above, an example of the preferred embodiment of the present invention has been described, but the present invention is not limited to the embodiment described here. For example, the substrate is not limited to a semiconductor wafer, but may be another glass for an LCD substrate, a CD substrate, a printed substrate, a ceramic substrate, or the like.
[0031]
In the present embodiment, the step of immersing the wafer W in the etching liquid to etch the wafer W has been described. However, the wafer carrier 2 is used in the step of immersing the wafer W in various other processing liquids. be able to. For example, the cleaning process of the wafer W can be effectively performed by using the cleaning process in which the wafer W is sequentially immersed in a cleaning chemical solution and a rinsing solution. According to the cleaning process using the wafer carrier 2, the surface area of each of the holding grooves 10 and the support grooves 20 of the side walls 12, 13 is inserted into each of the holding grooves of the side wall by the conventional wafer carrier. Since the surface area is smaller than the surface area of the portion, the peripheral edge of the wafer W is easily brought into contact with the cleaning chemical, the rinsing liquid and the drying processing fluid, and the chemical processing, the rinsing processing, and the drying processing can be performed effectively. Since the cleaning chemical, the rinsing liquid and the processing fluid for drying easily flow between the holding groove 10 and the periphery of the wafer W and between the support groove 20 and the periphery of the wafer W, the holding groove 10 and the The portion inserted into the support groove 20 can be effectively treated with a chemical solution, a rinsing process, and a drying process. Therefore, the wafer W can be reliably cleaned, and uneven processing can be prevented, and the yield can be improved.
[0032]
The shape of each support groove 20 is formed so as to have a V-shaped cross section that extends upward from below. However, any shape that can prevent the wafer W from sliding on the upper surface of the support rod 18 can be used. For example, the cross section may be a rectangular shape having a constant width.
[0033]
(Example)
A wafer W of GaAs (gallium arsenide) was housed in the wafer carrier 2 according to the present invention, and was etched in the etching system 1. First, the wafer W was immersed in an etching solution 3 containing ammonia and hydrogen peroxide to etch the surface of the wafer W by about 100 μm. Next, it was immersed in pure water 5 and washed with water, and then dried immediately. After the drying, the appearance of the wafer W was visually checked for uneven etching. Further, the thickness of the central portion of the wafer W and the peripheral portion of the wafer W inserted into the holding groove 10 are measured by a dial gauge measuring machine (made by Mitutoyo), and the thickness of the central portion and the thickness of the peripheral portion are measured. And the difference (thickness unevenness) was calculated. The confirmation of the etching unevenness and the measurement of the thickness unevenness were performed for each of the five dried wafers W, and the average value of the thickness unevenness was calculated. In addition, the thickness unevenness was measured at a plurality of peripheral portions, and an average value was calculated for the maximum thickness unevenness measured for each wafer W. FIG. 4 is a table showing the presence / absence of etching unevenness confirmed for each of the five wafers W, the maximum value of the measured thickness unevenness, and the average value of the maximum values of the thickness unevenness. As shown in FIG. 4, none of the five wafers W showed uneven etching, and the average value of the uneven thickness was about 5.9 μm, confirming that the etching was successfully performed. FIG. 5 is a photograph of the surface of the wafer W taken after drying. As can be understood from FIG. 5, the surface of the wafer W after drying was seen to be flat, and etching unevenness was not confirmed.
[0034]
(Comparative example)
In order to compare with the effect of the processing using the wafer carrier 2 according to the present invention, the etching was performed in the etching processing system 1 using the conventional wafer carrier. First, a GaAs (gallium arsenide) wafer W was housed in a conventional wafer carrier, immersed in an etching chemical 3 containing ammonia and hydrogen peroxide, and the surface of the wafer W was etched by about 100 μm. Next, it was immersed in pure water 5 and washed with water, and then dried immediately. After the drying, the appearance of the wafer W was visually checked for uneven etching. Further, the thickness of the central portion of the wafer W and the peripheral portion of the wafer W inserted into the holding groove are measured by a dial gauge measuring device (made by Mitutoyo), and the thickness of the central portion and the thickness of the peripheral portion are measured. (Uneven thickness) was calculated. The confirmation of the etching unevenness and the measurement of the thickness unevenness were performed for each of the five dried wafers W, and the average value of the thickness unevenness was calculated. In addition, the thickness unevenness was measured at a plurality of peripheral portions, and an average value was calculated for the maximum thickness unevenness measured for each wafer W. FIG. 6 is a table showing the presence / absence of etching unevenness confirmed for each of the five wafers W, the maximum value of the measured thickness unevenness, and the average of the maximum values of the thickness unevenness. As shown in FIG. 6, etching unevenness was confirmed in all of the five wafers W. The average value of the thickness unevenness is about 11.4 μm, and it is understood that the thickness unevenness is large as compared with the result of the processing using the wafer carrier 2 of the present invention. FIG. 7 is a photograph of the surface of the wafer W taken after drying. On the surface of the dried wafer W shown in FIG. 7, numerous rounded small irregularities are seen, and it can be seen that etching unevenness occurs in an orange peel shape. That is, the wafer W is not sufficiently etched by the processing using the conventional wafer carrier, but by using the wafer carrier 2 of the present invention, the uneven etching can be prevented, the uneven thickness can be greatly improved, and the sufficient wafer W can be obtained. It was confirmed that it was etched.
[0035]
【The invention's effect】
According to the present invention, the processing liquid easily contacts the periphery of the substrate, and the periphery of the substrate can be effectively treated. Further, since the processing liquid easily flows between the holding groove and the peripheral edge of the substrate and between the supporting groove and the peripheral edge of the substrate, a portion inserted into the holding groove or the supporting groove can be effectively treated. Therefore, uneven processing of the substrate can be prevented, and the yield can be improved.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram showing a configuration of an etching processing system.
FIG. 2 is a longitudinal sectional view of the wafer carrier according to the embodiment.
FIG. 3 is a longitudinal sectional view of the wafer carrier according to the embodiment.
FIG. 4 shows the presence / absence of etching unevenness, the results of measurement of thickness unevenness, and the average value of thickness unevenness for five wafers that have been subjected to etching, water washing, and drying using the wafer carrier according to the present invention. It is a table.
FIG. 5 is a photograph of the surface of a wafer that has been subjected to etching, water washing, and drying using the wafer carrier according to the present invention.
FIG. 6 is a table showing the presence or absence of etching unevenness, the results of measurement of thickness unevenness, and the average value of thickness unevenness for five wafers that have been subjected to etching, washing, and drying using a conventional wafer carrier. It is.
FIG. 7 is a photograph of the surface of a wafer that has been subjected to etching, washing and drying using a conventional wafer carrier.
[Explanation of symbols]
W wafer
1 Etching system
2 Wafer carrier
4 Chemical tank
5 Rinse tank
10 Holding groove
12,13 Side wall
18 Support rod
20 Support groove

Claims (4)

対向する側壁に基板の周縁を保持する複数の保持溝をそれぞれ備え,複数枚の基板を収納する基板収納容器であって,
前記基板収納容器に収納された複数枚の基板の下部中央を持ち上げて支持する支持棒を備えることを特徴とする,基板収納容器。
A substrate storage container that includes a plurality of holding grooves for holding a peripheral edge of a substrate on opposing side walls, and stores a plurality of substrates.
A substrate storage container, comprising: a support rod that lifts and supports a lower center of a plurality of substrates stored in the substrate storage container.
前記支持棒の上面に,基板の周縁を支持する複数の支持溝を備えることを特徴とする,請求項1に記載の基板収納容器。2. The substrate storage container according to claim 1, wherein a plurality of support grooves for supporting a peripheral edge of the substrate are provided on an upper surface of the support rod. 請求項1又は2に記載の基板収納容器に複数枚の基板を収納し,処理槽に貯留されたエッチング用の処理液に前記基板収納容器を浸漬し,前記エッチング用の処理液によって基板をエッチングすることを特徴とする,基板のエッチング方法。A plurality of substrates are stored in the substrate storage container according to claim 1, and the substrate storage container is immersed in a processing solution for etching stored in a processing tank, and the substrate is etched by the processing solution for etching. A substrate etching method. 請求項1又は2に記載の基板収納容器に複数枚の基板を収納し,処理槽に貯留された洗浄用の処理液に前記基板収納容器を浸漬し,前記洗浄用の処理液によって基板を洗浄することを特徴とする,基板の洗浄方法。A plurality of substrates are stored in the substrate storage container according to claim 1, and the substrate storage container is immersed in a processing solution for cleaning stored in a processing tank, and the substrate is cleaned with the processing solution for cleaning. A method for cleaning a substrate, comprising:
JP2003073249A 2003-03-18 2003-03-18 Substrate container, substrate etching method and substrate cleaning method Pending JP2004281860A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015035502A (en) * 2013-08-09 2015-02-19 三洋電機株式会社 Method for etching silicon substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015035502A (en) * 2013-08-09 2015-02-19 三洋電機株式会社 Method for etching silicon substrate

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