JP2004319783A - Device for cleaning semiconductor substrate - Google Patents

Device for cleaning semiconductor substrate Download PDF

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Publication number
JP2004319783A
JP2004319783A JP2003111968A JP2003111968A JP2004319783A JP 2004319783 A JP2004319783 A JP 2004319783A JP 2003111968 A JP2003111968 A JP 2003111968A JP 2003111968 A JP2003111968 A JP 2003111968A JP 2004319783 A JP2004319783 A JP 2004319783A
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Prior art keywords
substrate
semiconductor substrate
cleaning apparatus
processing tank
processing
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JP2003111968A
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Japanese (ja)
Inventor
Hisafumi Yoneda
尚史 米田
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SPC Electronics Corp
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SPC Electronics Corp
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Application filed by SPC Electronics Corp filed Critical SPC Electronics Corp
Priority to JP2003111968A priority Critical patent/JP2004319783A/en
Publication of JP2004319783A publication Critical patent/JP2004319783A/en
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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device for cleaning a semiconductor substrate that can prevent the substrate from being contaminated by a chemical liquid left as a reaction product in a groove for protecting the substrate, and can clean the substrate for a short time without blocking a liquid current. <P>SOLUTION: The device for cleaning a semiconductor substrate houses a plurality of semiconductor wafers 1 in position by a dedicated substrate holding tool 2, dips them successively in a plurality of treatment tanks 4 in a batch manner to clean them. A projection 6 is provided on the inner bottom of the treatment tank 4 housing the substrates 1 for dipping by the substrate holding tool 2 in a manner that the substrate 1 is slightly floated from the substrate holding tool 2. Thus, the projection 6 allows the lower end of the substrate 1 to be floated, and the substrate holding tool 2 supports the inclination of the substrate 1 by its both side ends. At least one or more projections 6 are provided to extend like a rib in the arrangement direction of the substrate 1, and a plurality of grooves are provided so that the substrate 1 is brought into contact with the rib-like tip end and it is held, and furthermore, the groove is made to have a V-shaped shape while it is inclined in contact with the front and rear lower ends of the substrate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は半導体基板洗浄装置に係り、より詳細には、半導体ウェーハなどの基板を専用の基板保持具に複数枚収納してバッチ式に複数の処理槽に順次浸漬して洗浄する半導体基板洗浄装置に関する。
【0002】
【従来の技術】
【特許文献1】
特開平6−333907号公報
【0003】
従来、半導体基板洗浄装置は、耐薬品性の基板保持具(ウェーハカセット)に半導体ウェーハなどの円盤状の基板を複数枚配列させて収納し、この基板保持具ごとバッチ式に複数の処理槽内に順次浸漬することで洗浄(例えば、特許文献1)し、場合によっては超音波を印加することで洗浄効果を向上していた。図10は、このように複数の処理槽内に基板を順次浸漬させて洗浄する従来の半導体基板洗浄装置を示す図である。また、図11は、図10に示した処理槽10内に基板1を搬入する動作を示す図であり、図11(a)は搬入途中の状態を、図11(b)は搬入された状態を各々示している。また、図12は、図10に示した処理槽10内で基板1を洗浄する状態を示す図である。また、図13は、図10に示した突起12の詳細を示す図である。
【0004】
図10に示すように、従来の半導体基板洗浄装置は、半導体ウェーハなどの円盤状の基板1を複数枚配列させて収納して両側から把持して搬送する専用の基板保持具2を設け、この基板保持具2に収納した基板1をバッチ式に順次浸漬させて洗浄する複数の処理槽10を備えている。また、処理槽10内の底部には、基板保持具2に複数収納して浸漬させた基板1を、この基板保持具2から完全に移し替えて保持する突起12を備えている。この突起12は、処理槽10内の底部で基板1の配列方向に延在して先端の上部に基板1下端を嵌入させて保持する複数の溝12a(図13参照)を設けている。
【0005】
このような構成からなる従来の半導体基板洗浄装置により基板1を洗浄する場合、例えば、図10に示したように、水に硫酸と硫酸化水素水とを混合して貯留した第1処理槽10aと、純水を貯留した第2処理槽10bと、水にアンモニア水と過酸化水素水とを混合して貯留した第3処理槽10cとを備え、この第1処理槽10aから第3処理槽10cまで基板保持具2に基板1を複数収納してバッチ式に順次浸漬させて洗浄処理する。この処理槽10では、第1処理槽10aで基板1の表面に付着した汚染物を除去する1回目の洗浄を行い、次いで第2処理槽10bで第1処理槽10aの薬液を洗浄(リンス)するとともに、最後に第3処理槽10cで基板1に付着した汚染物を除去する2回目の洗浄を行う。
【0006】
ここで、基板1は、各処理槽10内に順次搬送されて底部に設けた突部12に基板保持具2から完全に移し替えられて処理される。この際、基板1は、図11(a)に示すように、基板保持具2に複数収納した状態で搬送され、この基板保持具2とともに処理槽10内に直接降下させて浸漬させる。そして、処理槽10内では、図11(b)に示すように、降下する基板保持具2に収納された基板1が底部に設けた突起12の溝12aにより保持されて移し替えられる。これにより基板1は、図11(a)に示した基板保持具2内で保持した外周の保持面を、図11(b)に示した突部12の溝12aのみの保持面に減少でき、処理槽10内で基板1の表面を最大限露出して効果的に処理することができる。この際、処理槽10は、内部に貯留した薬液または純水などの処理液を循環して底部から再び噴射させ、図12に示すように、槽内部に液流を発生させて基板1を処理するように形成している。
【0007】
しかしながら、このような従来の半導体基板洗浄装置では、図13に示すように、各処理槽10内で基板1の下端を突起12の溝12aに完全に保持したまま処理する構造のため、溝12aに保持した部分の洗浄(リンス)処理が不十分になる場合がある。このように、例えば、第1処理槽10aから第2処理槽10b(図1参照)に移動して溝12aに保持した部分の洗浄処理が不十分であつた場合、溝12a内に残留した薬液が基板1の表面に付着し、この状態で第3処理槽10cに移動することで付着した薬液が反応生成物(例えば、第1処理槽10aの硫酸と第3処理槽10cのアンモニアとの反応による塩の生成等)となって基板1を汚染することがあった。
また、従来の半導体基板洗浄装置では、図12に示したように、基板1を保持する突起12が処理槽10内の底部に設置しているため、処理液を下方からどんなに均一に噴射しても突起12が処理液の流れを遮ることで基板1の表面で乱流が発生してしまうことがあった。
【0008】
【発明が解決しようとする課題】
このように従来の半導体基板洗浄装置では、処理槽10内で基板1を保持する突起12の溝12a内に薬液が残留して洗浄されず基板1に付着するため、この基板1に付着した薬液が反応生成物となって汚染を発生するとともに、汚染の発生を避けるために洗浄(リンス)時間が長くなり生産効率が低下するという不具合があった。
また、従来の半導体基板洗浄装置では、処理槽10の底部に突起12を設けることで突起12が処理液の流れを遮ってしまうため、処理液を下方からどんなに均一に噴射しても基板1の表面で乱流が発生して良好に洗浄処理を実行できないという不具合があった。
本発明はこのような課題を解決し、基板を保持する溝に残留する薬液が反応生成物となり汚染することを防止し、液流を妨げず短時間で洗浄処理できる半導体基板洗浄装置を提供することを目的とする。
【0009】
【課題を解決するための手段】
本発明は上述の課題を解決するために、半導体ウェーハなどの基板を専用の基板保持具に複数枚配列させて収納してバッチ式に複数の処理槽に順次浸漬させて洗浄する半導体基板洗浄装置であって、基板保持具に基板を複数収納して浸漬させる処理槽内の底部に基板を基板保持具から若干浮かせる突起を備え、この突起が基板の下端を浮かせて支持して基板保持具が基板の倒れを両側端で支持するとともに、突起は基板の配列方向にリブ状に延在して少なくとも1つ以上配置し、このリブ状の先端に基板が当接して支持される複数の溝を設け、この溝形状が基板の表裏下端に傾斜して接するV字型形状に設ける。
ここで、突起は、V字型形状の溝内下方に更に切り欠いた補助溝を設け、この補助溝により処理槽内で洗浄中の液通りを向上させることが好ましい。また、突起には、溝をリブ状の先端に幅2〜6mm、深さ2〜5mmの寸法でV字型形状に切り欠いて複数形成することが好ましい。また、突起は、基板を基板保持具に収納した状態から10mm〜40mm浮かせることが好ましい。また、突起は、PEEK、PTFE、PVDFいずれかの材質により形成することが好ましい。
【0010】
【発明の実施の形態】
次に、添付図面を参照して本発明による半導体基板洗浄装置の実施の形態を詳細に説明する。図1は、本発明による半導体基板洗浄装置の実施形態を示す図である。また、図2は、図1に示した突起6の詳細を示す図である。また、図3は、図1に示した処理槽4内で基板1を洗浄する状態を示す図である。また、図4は、図2に示した溝6aの詳細を示す図である。また、図5は、図4に示した矢印A方向から見た状態を示す図である。また、図6は、図1に示した処理槽4内に基板1を搬入する動作を示す図であり、図6(a)は搬入途中の状態を、図6(b)は搬入された状態を各々示している。また、図7は、図4に示した突起6の他の実施例を示す図である。また、図8は、図7に示した矢印B方向から見た状態を示す図である。また、図9は、図8に示した補助溝の他の実施例を示す図である。
【0011】
図1に示すように、本発明による半導体基板洗浄装置の実施形態は、図10に示した従来技術と同様に、半導体ウェーハなどの円盤状の基板1を複数枚配列させて収納して両側から把持して搬送する専用の基板保持具2を設け、この基板保持具2に収納した基板1をバッチ式に順次浸漬させて洗浄する複数の処理槽4を備えている。また、本実施の形態は、図10に示した従来技術とは異なり、基板保持具2に基板1を複数収納して浸漬させた時、処理槽4内の底部で基板1を保持することなく基板保持具2から若干浮かせる突起6を備えている。従って、本実施の形態では、洗浄時に基板1を保持する場合、突起6が基板1の下端を浮かせて支持し、基板保持具2が基板1の倒れを両側端で支持(図6(b)参照)するように設けている。
【0012】
ここで、突起6は、図2に示すように、処理槽4の底部に形成されて基板1の配列方向にリブ状に延在して平行して一対に配置している。この突起6は、PEEK、PTFE(4フッ化エチレン)、PVDF(3フッ化エチレン)などの汚染し難い材質により形成されている。また、処理槽4は、内部に貯留した処理液(薬液または純水等)を循環して底部から再び噴射させ、図3に示すように、槽内部に液流を発生させて処理するように形成している。従って、本実施の形態では、図12に示した従来技術とは異なり、突起6をリブ状に形成することで図3に示したように低部からの液流を妨げることなく、処理液を基板1の表面に均一に流すことが可能になる。この時、突起6は、処理槽4の底部に平行して一対に配置しているが2つ以上設けた場合、処理中の基板1の安定性がよくなる。しかし、突起6は、処理槽4の底部にあまり多く設けると処理液の流れを妨げるため、図2に示したように平行して一対に設ける程度が好ましい。
【0013】
また、突起6には、図2に示したように、リブ状の先端に基板1が当接して支持される複数の溝6aを設けている。この溝6aは、基板1の表裏下端に傾斜して接するように延在するV字型形状に設けている。この溝6aは、図4に示すように、リブ状の突起6先端での幅Cが2〜6mm、深さDが2〜5mmの寸法でV字型形状に切り欠いて複数形成している。これにより、基板1の処理中または浮き上げ時に、基板1が不必要に動かないよう溝6aに係合させて安定して保持することができる。また、溝6aは、基板保持具2に複数配列させて収納する基板1の間隔とほぼ同じになるように形成され、隣り合う基板1同士が一定の間隔を持って安定するように設計されている。ここで、隣り合う基板1の間隔Eは、4〜6mmに設定することが好ましい。このように本実施の形態では、図5に示すように、基板1が保持されず表裏側の下端をV字型形状の斜面に点接触させて支持する構造のため、基板1と溝6aとの間に薬液が残留することを防止でき、基板1に付着した薬液を短時間で洗浄処理できる。
【0014】
このように形成された本発明による半導体基板洗浄装置の実施形態を用いて基板1を洗浄する場合、図10に示した従来技術と同様に、例えば、図1に示した水に硫酸及び硫酸化水素水を混合して貯留した第1処理槽4aと、純水を貯留した第2処理槽4bと、水にアンモニア水及び過酸化水素水を混合して貯留した第3処理槽4cとを備え、この第1処理槽4aから第3処理槽4cまで基板保持具2に基板1を複数収納してバッチ式に順次浸漬させて洗浄処理する。この処理槽4では、第1処理槽4aで基板1の表面に付着した汚染物を除去する1回目の洗浄を行い、次いで第2処理槽4bで第1処理槽4aの薬液を洗浄(リンス)するとともに、最後に第3処理槽4cで基板1に付着した汚染物を除去する2回目の洗浄を行う。また、基板保持具2は、図示していない搬送ロボットにより搬送されて所定の時間毎、各処理槽4内に投入して処理する。
【0015】
ここで、基板1は、従来技術とは異なり、各処理槽4内に順次搬送されて底部に設けた突部6により基板保持具2に保持した状態で若干浮かせることで処理される。具体的に説明すると、基板1は、図6(a)に示すように、基板保持具2に複数収納した状態で搬送され、この基板保持具2とともに処理槽4内に直接降下させて浸漬させる。そして、処理槽4内では、図6(b)に示すように、降下する基板保持具2に収納された基板1が底部に設けた突起6の溝6aに当接して若干浮かせた状態に保持される。この際、突起6は、基板1を基板保持具2に収納した状態から、好ましくは10mm〜40mm浮かせることが望ましい。これにより基板1は、図6(a)に示した基板保持具2内に収納して外周を保持した状態から、図6(b)に示した基板1の下端2点を支持して浮かせる突起6と、基板1の倒れを両側端の2点で支持する基板保持具2とによる合計4点支持の状態に保持される。従って、本実施の形態では、突起6の溝6aに基板1の下端を点接触(図4参照)させて保持するため、基板1を保持する接触面を低減し、処理槽4内で表面を最大限露出して効果的に洗浄処理できるとともに、突起6が基板1を若干浮かせることで基板保持具2内も同時に洗浄処理できる。
【0016】
このように、本発明による半導体基板洗浄装置の実施形態によると、処理槽4内に突起6が処理中の基板1を点接触(図5参照)により基板保持具2内で若干浮かせて支持する構造のため、前処理段階での残留薬液を効果的に洗い流すことができ、これによって処理時間の削減、及び品質の向上が期待できる。
また、本発明による半導体基板洗浄装置の実施形態によると、処理槽4内の底部に突起6をリブ状に形成して設置(図3参照)しているため、この処理槽4内に噴射する処理液の液流を妨げることなく、基板1の表面に均一に流すことが可能になるとともに洗浄処理をより効果的に実行することができる。
【0017】
ところで、突起6は、図5に示したように、基板1の下端をV字型形状の溝6aに支持した際、この基板1と溝6aとの間に小さな三角形状の隙間が形成されて十分に洗浄処理されない可能性もある。そこで、V字型形状の溝内に更なる切り欠きを設けてY字型形状に形成することも可能である。このY字型形状の溝を形成した突起の他の実施例は、図7に示すように、処理槽の底部にリブ状に形成されて、このリブ状の先端にV字型形状の溝7aを形成し、このV字型形状の溝7a内下方に更に切り欠いた補助溝7bを設けている。
このように形成された突起7は、図8に示すように、V字型形状の溝7aに基板1の下端を点接触させて支持するため、図5に示した突起と同様の効果を得ることができるとともに、図8に示したV字型形状の溝7a内で更に下方に補助溝7bを設けることで、V字型形状の溝7aに支持する基板1の下部に液流を通過させる広い空間ができ、図5に示した突起に比べてより効果的に液流を発生させて洗浄処理することができる。
【0018】
一方、このようにV字型形状の溝内に垂直下方に切り欠いた補助溝とは異なり、例えば、円弧状に切り欠いた補助溝を設けることも可能である。この円弧状に設けた補助溝の他の実施例は、図9に示すように、処理槽の底部にリブ状に形成した突部8を備え、この突起8の先端にV字型形状の溝8aを形成し、このV字型形状の溝8a内下方に更に円弧状に切り欠いた補助溝8bを設けている。
このように形成された補助溝8bでは、V字型形状の溝8aの下方に更に形成するため、図8に示した補助溝と同様の効果を得ることができるとともに、この溝8a内の下方に円弧状に切り欠いて補助溝8bを設けることで、溝8a及び補助溝8bの内面に凹状の角部が無くなり薬液が残留し難く、且つ液流が流れ易い形状に形成することができる。
【0019】
以上、本発明による半導体基板洗浄装置の実施の形態を詳細に説明したが、本発明は前述した実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で変更可能である。
例えば、処理槽の底部に突起を平行して一対またはそれ以上設けた実施例を説明したが、これに限定されるものではなく、処理槽の底部に一箇所だけ設けることも可能である。
【0020】
【発明の効果】
このように本発明による半導体基板洗浄装置によれば、処理槽内に突起が処理中の基板を点接触により基板保持具内で若干浮かせて支持する構造のため、前処理段階での残留薬液を効果的に洗い流すことができ、これによって洗浄処理時間の削減、及び洗浄品質の向上が期待できる。
また、本発明による半導体基板洗浄装置の実施形態によると、処理槽内の底部に突起をリブ状に形成して設置しているため、この処理槽内の底部で噴射する処理液の液流を妨げることなく、基板の表面に均一に流すことが可能になるとともに洗浄処理をより効果的に実行することができる。
【図面の簡単な説明】
【図1】本発明による半導体基板洗浄装置の実施形態を示す図。
【図2】図1に示した突起の詳細を示す図。
【図3】図1に示した処理槽内で基板を洗浄する状態を示す図。
【図4】図2に示した溝の詳細を示す図。
【図5】図4に示した矢印A方向から見た状態を示す図。
【図6】図1に示した処理槽内に基板を搬入する動作を示す図。
【図7】図4に示した突起の他の実施例を示す図。
【図8】図7に示した矢印B方向から見た状態を示す図。
【図9】図8に示した補助溝の他の実施例を示す図。
【図10】従来の半導体基板洗浄装置を示す図。
【図11】図10に示した処理槽内に基板を搬入する動作を示す図。
【図12】図10に示した処理槽内で基板を洗浄する状態を示す図。
【図13】図10に示した突起の詳細を示す図。
【符号の説明】
1 基板
2 基板保持具
4 処理槽
6 突起
6a 溝
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor substrate cleaning apparatus, and more particularly, to a semiconductor substrate cleaning apparatus that stores a plurality of substrates such as semiconductor wafers in a dedicated substrate holder and sequentially immerses them in a plurality of processing tanks in a batch manner for cleaning. About.
[0002]
[Prior art]
[Patent Document 1]
JP-A-6-333907
Conventionally, a semiconductor substrate cleaning apparatus stores a plurality of disk-shaped substrates such as semiconductor wafers arranged in a chemical-resistant substrate holder (wafer cassette) and batch-processes the substrate holder in a plurality of processing tanks. (See, for example, Patent Document 1), and in some cases, an ultrasonic wave is applied to improve the cleaning effect. FIG. 10 is a diagram showing a conventional semiconductor substrate cleaning apparatus for sequentially immersing a substrate in a plurality of processing tanks for cleaning. 11A and 11B are views showing an operation of loading the substrate 1 into the processing tank 10 shown in FIG. 10. FIG. 11A shows a state in which the substrate 1 is being loaded, and FIG. Are respectively shown. FIG. 12 is a diagram showing a state where the substrate 1 is cleaned in the processing bath 10 shown in FIG. FIG. 13 is a diagram showing details of the protrusion 12 shown in FIG.
[0004]
As shown in FIG. 10, the conventional semiconductor substrate cleaning apparatus is provided with a dedicated substrate holder 2 for arranging and storing a plurality of disk-shaped substrates 1 such as semiconductor wafers, holding the substrates 1 from both sides, and transporting them. A plurality of processing tanks 10 are provided for sequentially immersing and cleaning the substrates 1 stored in the substrate holder 2 in a batch manner. Further, the bottom of the processing tank 10 is provided with a projection 12 for completely transferring and holding a plurality of substrates 1 housed and immersed in the substrate holder 2 from the substrate holder 2. The protrusion 12 has a plurality of grooves 12a (see FIG. 13) extending at the bottom of the processing tank 10 in the arrangement direction of the substrates 1 and fitting and holding the lower end of the substrate 1 at the upper end thereof.
[0005]
When the substrate 1 is cleaned by the conventional semiconductor substrate cleaning apparatus having such a configuration, for example, as shown in FIG. 10, a first processing tank 10a in which water is mixed with sulfuric acid and hydrogen sulfate water and stored. , A second processing tank 10b storing pure water, and a third processing tank 10c storing water mixed with ammonia water and hydrogen peroxide water. The first processing tank 10a to the third processing tank A plurality of substrates 1 are stored in the substrate holder 2 until 10c, and the substrates 1 are sequentially immersed in a batch system to perform a cleaning process. In this processing tank 10, the first cleaning for removing contaminants attached to the surface of the substrate 1 is performed in the first processing tank 10a, and then the chemical in the first processing tank 10a is cleaned (rinsed) in the second processing tank 10b. At the same time, a second cleaning for removing contaminants attached to the substrate 1 is finally performed in the third processing tank 10c.
[0006]
Here, the substrate 1 is sequentially transported into each of the processing tanks 10 and is completely transferred from the substrate holder 2 to the protrusion 12 provided at the bottom for processing. At this time, as shown in FIG. 11A, the substrate 1 is transported while being stored in a plurality of substrate holders 2, and is directly lowered into the processing bath 10 together with the substrate holder 2 to be immersed. Then, in the processing tank 10, as shown in FIG. 11 (b), the substrate 1 stored in the substrate holder 2 descending is held and transferred by the groove 12a of the projection 12 provided on the bottom. As a result, the outer peripheral holding surface of the substrate 1 held in the substrate holder 2 shown in FIG. 11A can be reduced to the holding surface of only the groove 12a of the projection 12 shown in FIG. The surface of the substrate 1 can be effectively exposed by maximally exposing the surface of the substrate 1 in the processing tank 10. At this time, the processing tank 10 circulates a processing liquid such as a chemical solution or pure water stored in the processing tank, and injects the processing liquid from the bottom again to generate a liquid flow inside the tank to process the substrate 1 as shown in FIG. It is formed so that.
[0007]
However, in such a conventional semiconductor substrate cleaning apparatus, as shown in FIG. 13, the processing is performed while the lower end of the substrate 1 is completely held in the groove 12a of the projection 12 in each processing tank 10, so that the groove 12a Cleaning (rinsing) of the portion held in the case may be insufficient. As described above, for example, when the cleaning processing of the portion held in the groove 12a by moving from the first processing tank 10a to the second processing tank 10b (see FIG. 1) is insufficient, the chemical solution remaining in the groove 12a Adheres to the surface of the substrate 1 and moves to the third treatment tank 10c in this state, whereby the adhered chemical solution reacts with the reaction product (for example, the reaction between sulfuric acid in the first treatment tank 10a and ammonia in the third treatment tank 10c). , Etc.) to contaminate the substrate 1.
Further, in the conventional semiconductor substrate cleaning apparatus, as shown in FIG. 12, the projections 12 for holding the substrate 1 are provided at the bottom of the processing bath 10, so that the processing liquid can be sprayed uniformly from below. Also, turbulence may occur on the surface of the substrate 1 because the projection 12 blocks the flow of the processing liquid.
[0008]
[Problems to be solved by the invention]
As described above, in the conventional semiconductor substrate cleaning apparatus, the chemical liquid remains in the groove 12a of the protrusion 12 for holding the substrate 1 in the processing tank 10 and is not washed and adheres to the substrate 1. However, there is a problem in that, as a reaction product, contamination is generated, and in order to avoid the generation of contamination, a cleaning (rinsing) time is lengthened and production efficiency is reduced.
Further, in the conventional semiconductor substrate cleaning apparatus, since the projections 12 obstruct the flow of the processing liquid by providing the projections 12 at the bottom of the processing bath 10, the processing liquid of the substrate 1 is sprayed no matter how uniformly the processing liquid is sprayed from below. There was a problem that a turbulence was generated on the surface and the cleaning process could not be performed well.
The present invention solves such a problem, and provides a semiconductor substrate cleaning apparatus capable of preventing a chemical solution remaining in a groove holding a substrate from becoming a reaction product and contaminating the same, and performing a cleaning process in a short time without obstructing a liquid flow. The purpose is to:
[0009]
[Means for Solving the Problems]
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a semiconductor substrate cleaning apparatus that arranges a plurality of substrates such as semiconductor wafers in a dedicated substrate holder, stores the substrates, and sequentially immerses the substrates in a plurality of processing tanks for cleaning. A projection is provided at the bottom of the processing tank in which a plurality of substrates are stored and immersed in the substrate holder, and the substrate is slightly lifted from the substrate holder. While supporting the fall of the substrate at both side ends, the protrusion extends in a rib shape in the arrangement direction of the substrate, and at least one protrusion is arranged. A plurality of grooves supported by the substrate in contact with the rib-shaped tip are provided. The groove is provided in a V-shape in which the groove is inclined and in contact with the front and back lower ends of the substrate.
Here, it is preferable that the projection is provided with a notched auxiliary groove below the V-shaped groove, and the auxiliary groove improves the liquid flow during cleaning in the processing tank. In addition, it is preferable that a plurality of grooves are formed in the protrusion by cutting out a V-shaped groove having a width of 2 to 6 mm and a depth of 2 to 5 mm at a rib-like tip. Further, it is preferable that the projections be floated by 10 mm to 40 mm from a state in which the substrate is stored in the substrate holder. Further, the protrusion is preferably formed of any material of PEEK, PTFE, and PVDF.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, an embodiment of a semiconductor substrate cleaning apparatus according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a view showing an embodiment of a semiconductor substrate cleaning apparatus according to the present invention. FIG. 2 is a diagram showing details of the protrusion 6 shown in FIG. FIG. 3 is a diagram showing a state in which the substrate 1 is cleaned in the processing tank 4 shown in FIG. FIG. 4 is a diagram showing details of the groove 6a shown in FIG. FIG. 5 is a diagram showing a state viewed from the arrow A direction shown in FIG. 6A and 6B are views showing an operation of loading the substrate 1 into the processing tank 4 shown in FIG. 1, wherein FIG. 6A shows a state in which the substrate 1 is being loaded, and FIG. Are respectively shown. FIG. 7 is a view showing another embodiment of the protrusion 6 shown in FIG. FIG. 8 is a diagram showing a state viewed from the direction of arrow B shown in FIG. FIG. 9 is a view showing another embodiment of the auxiliary groove shown in FIG.
[0011]
As shown in FIG. 1, an embodiment of a semiconductor substrate cleaning apparatus according to the present invention, similar to the prior art shown in FIG. 10, arranges and stores a plurality of disk-shaped substrates 1 such as semiconductor wafers from both sides. A dedicated substrate holder 2 for holding and transporting is provided, and a plurality of processing tanks 4 are provided for sequentially immersing and cleaning the substrates 1 stored in the substrate holder 2 in a batch manner. Also, in the present embodiment, unlike the prior art shown in FIG. 10, when a plurality of substrates 1 are stored and immersed in the substrate holder 2, the substrate 1 is not held at the bottom in the processing tank 4. A projection 6 is provided to slightly float from the substrate holder 2. Therefore, in the present embodiment, when the substrate 1 is held during cleaning, the projections 6 support the lower end of the substrate 1 by floating, and the substrate holder 2 supports the fall of the substrate 1 at both ends (FIG. 6B). See).
[0012]
Here, as shown in FIG. 2, the protrusions 6 are formed on the bottom of the processing tank 4, extend in a rib shape in the arrangement direction of the substrates 1, and are arranged in parallel. The projections 6 are made of a material that is not easily contaminated, such as PEEK, PTFE (ethylene tetrafluoride), and PVDF (ethylene trifluoride). Further, the processing tank 4 circulates the processing liquid (chemical solution or pure water or the like) stored therein and injects it again from the bottom to generate a liquid flow inside the tank as shown in FIG. 3 for processing. Has formed. Therefore, in the present embodiment, unlike the prior art shown in FIG. 12, by forming the protrusion 6 in a rib shape, the processing liquid can be removed without obstructing the liquid flow from the lower part as shown in FIG. It becomes possible to flow uniformly on the surface of the substrate 1. At this time, the projections 6 are arranged in a pair in parallel with the bottom of the processing tank 4. If two or more projections 6 are provided, the stability of the substrate 1 during processing is improved. However, if the protrusions 6 are provided too much at the bottom of the processing tank 4, the flow of the processing liquid is obstructed. Therefore, it is preferable that the protrusions 6 be provided in parallel as shown in FIG. 2.
[0013]
Further, as shown in FIG. 2, the projection 6 is provided with a plurality of grooves 6a at the rib-like tip, which are supported by the substrate 1 being in contact therewith. The groove 6a is provided in a V-shape extending so as to be inclined and in contact with the front and back lower ends of the substrate 1. As shown in FIG. 4, the groove 6a has a width C at the tip of the rib-shaped projection 6 of 2 to 6 mm and a depth D of 2 to 5 mm, and is formed in a V-shape. . Thus, during processing or lifting of the substrate 1, the substrate 1 can be stably held by engaging with the groove 6a so as not to move unnecessarily. The grooves 6a are formed so as to be substantially the same as the intervals between the substrates 1 arranged and housed in the substrate holder 2, and are designed so that the adjacent substrates 1 are stabilized with a certain interval. I have. Here, the interval E between the adjacent substrates 1 is preferably set to 4 to 6 mm. As described above, in the present embodiment, as shown in FIG. 5, the substrate 1 is not held, and the lower ends on the front and back sides are point-contacted to the V-shaped slope to support the substrate 1. It is possible to prevent the chemical solution from remaining during the cleaning, and to wash the chemical solution attached to the substrate 1 in a short time.
[0014]
When the substrate 1 is cleaned using the semiconductor substrate cleaning apparatus according to the embodiment of the present invention thus formed, for example, sulfuric acid and sulfated water are added to the water shown in FIG. A first processing tank 4a in which hydrogen water is mixed and stored, a second processing tank 4b in which pure water is stored, and a third processing tank 4c in which ammonia water and hydrogen peroxide are mixed and stored in water are provided. Then, a plurality of substrates 1 are stored in the substrate holder 2 from the first processing tank 4a to the third processing tank 4c, and are sequentially immersed in a batch manner to perform a cleaning process. In the processing tank 4, a first cleaning for removing contaminants adhered to the surface of the substrate 1 is performed in a first processing tank 4a, and then a chemical solution in the first processing tank 4a is cleaned (rinsed) in a second processing tank 4b. At the same time, a second cleaning for removing contaminants attached to the substrate 1 is finally performed in the third processing tank 4c. The substrate holder 2 is transported by a transport robot (not shown), and is loaded into each processing tank 4 at predetermined time intervals for processing.
[0015]
Here, unlike the prior art, the substrate 1 is processed by being sequentially transported into each processing tank 4 and slightly lifted while being held on the substrate holder 2 by the protrusion 6 provided at the bottom. More specifically, as shown in FIG. 6A, a plurality of substrates 1 are conveyed while being stored in a plurality of substrate holders 2, and are directly lowered and immersed in the processing tank 4 together with the substrate holders 2. . Then, in the processing tank 4, as shown in FIG. 6B, the substrate 1 accommodated in the descending substrate holder 2 is held in a slightly floating state in contact with the groove 6a of the projection 6 provided on the bottom. Is done. At this time, it is desirable that the projection 6 is preferably floated by 10 mm to 40 mm from a state in which the substrate 1 is stored in the substrate holder 2. As a result, the substrate 1 is held in the substrate holder 2 shown in FIG. 6A and the outer periphery thereof is held, and the protrusion for supporting and lowering the two lower ends of the substrate 1 shown in FIG. 6 and the substrate holder 2 supporting the falling of the substrate 1 at two points on both side ends, so that the substrate 1 is held at a total of four points. Therefore, in this embodiment, since the lower end of the substrate 1 is held in point contact with the groove 6a of the projection 6 (see FIG. 4), the contact surface for holding the substrate 1 is reduced, and the surface in the processing bath 4 is reduced. The cleaning treatment can be performed effectively by exposing the substrate 1 to the maximum, and the inside of the substrate holder 2 can be cleaned at the same time by the protrusion 6 slightly lifting the substrate 1.
[0016]
As described above, according to the embodiment of the semiconductor substrate cleaning apparatus according to the present invention, the projection 6 supports the substrate 1 being processed in the processing tank 4 by floating slightly in the substrate holder 2 by point contact (see FIG. 5). Due to the structure, the residual chemical solution in the pretreatment stage can be effectively washed away, whereby reduction in treatment time and improvement in quality can be expected.
Further, according to the embodiment of the semiconductor substrate cleaning apparatus of the present invention, since the projection 6 is formed in a rib shape on the bottom of the processing tank 4 and installed (see FIG. 3), the jet is injected into the processing tank 4. It is possible to uniformly flow the surface of the substrate 1 without obstructing the flow of the processing liquid, and it is possible to more effectively execute the cleaning processing.
[0017]
By the way, as shown in FIG. 5, when the lower end of the substrate 1 is supported in the V-shaped groove 6a, a small triangular gap is formed between the substrate 1 and the groove 6a. It may not be sufficiently washed. Therefore, it is also possible to provide a further notch in the V-shaped groove to form a Y-shaped groove. As shown in FIG. 7, another embodiment of the projection in which the Y-shaped groove is formed is formed in a rib shape at the bottom of the processing tank, and the V-shaped groove 7a is formed at the tip of the rib shape. And a notched auxiliary groove 7b is provided below the V-shaped groove 7a.
As shown in FIG. 8, the protrusion 7 thus formed supports the lower end of the substrate 1 in point contact with the V-shaped groove 7a, so that the same effect as the protrusion shown in FIG. 5 is obtained. In addition, by providing the auxiliary groove 7b further below in the V-shaped groove 7a shown in FIG. 8, the liquid flow passes through the lower part of the substrate 1 supported by the V-shaped groove 7a. A large space is provided, and the cleaning process can be performed by generating a liquid flow more effectively than the projection shown in FIG.
[0018]
On the other hand, unlike the auxiliary groove notched vertically downward in the V-shaped groove, for example, an auxiliary groove notched in an arc shape can be provided. As shown in FIG. 9, another embodiment of the arc-shaped auxiliary groove is provided with a rib-shaped protrusion 8 at the bottom of the processing tank, and a V-shaped groove is formed at the tip of the protrusion 8. An auxiliary groove 8b is formed below the V-shaped groove 8a.
In the auxiliary groove 8b formed as described above, since the auxiliary groove is further formed below the V-shaped groove 8a, the same effect as that of the auxiliary groove shown in FIG. By providing the auxiliary groove 8b by cutting it out in an arc shape, the concave corners on the inner surfaces of the groove 8a and the auxiliary groove 8b are eliminated, so that the chemical liquid does not easily remain and the liquid can easily flow.
[0019]
As described above, the embodiment of the semiconductor substrate cleaning apparatus according to the present invention has been described in detail. However, the present invention is not limited to the above-described embodiment, and can be modified without departing from the gist thereof.
For example, although an embodiment has been described in which a pair or more projections are provided in parallel at the bottom of the processing tank, the present invention is not limited to this, and only one projection may be provided at the bottom of the processing tank.
[0020]
【The invention's effect】
As described above, according to the semiconductor substrate cleaning apparatus of the present invention, the projections in the processing tank support the substrate being processed by being slightly floated in the substrate holder by point contact, so that the residual chemical solution in the pretreatment stage is removed. The washing can be effectively carried out, thereby reducing the washing processing time and improving the washing quality.
Further, according to the embodiment of the semiconductor substrate cleaning apparatus of the present invention, since the protrusion is formed in a rib shape at the bottom in the processing tank and installed, the flow of the processing liquid jetted at the bottom in the processing tank is reduced. Without being obstructed, it is possible to uniformly flow on the surface of the substrate, and it is possible to more effectively execute the cleaning process.
[Brief description of the drawings]
FIG. 1 is a diagram showing an embodiment of a semiconductor substrate cleaning apparatus according to the present invention.
FIG. 2 is a diagram showing details of a projection shown in FIG. 1;
FIG. 3 is a diagram showing a state where a substrate is cleaned in the processing bath shown in FIG. 1;
FIG. 4 is a view showing details of a groove shown in FIG. 2;
FIG. 5 is a view showing a state viewed from the direction of arrow A shown in FIG. 4;
FIG. 6 is a view showing an operation of loading a substrate into the processing tank shown in FIG. 1;
FIG. 7 is a view showing another embodiment of the projection shown in FIG. 4;
FIG. 8 is a diagram showing a state viewed from the direction of arrow B shown in FIG. 7;
FIG. 9 is a view showing another embodiment of the auxiliary groove shown in FIG. 8;
FIG. 10 is a view showing a conventional semiconductor substrate cleaning apparatus.
FIG. 11 is a view showing an operation of carrying a substrate into the processing tank shown in FIG. 10;
FIG. 12 is a diagram showing a state where a substrate is cleaned in the processing bath shown in FIG. 10;
FIG. 13 is a view showing details of a protrusion shown in FIG. 10;
[Explanation of symbols]
Reference Signs List 1 substrate 2 substrate holder 4 processing tank 6 protrusion 6a groove

Claims (5)

半導体ウェーハなどの基板を専用の基板保持具に複数枚配列させて収納し、バッチ式に複数の処理槽に順次浸漬させて洗浄する半導体基板洗浄装置において、
前記基板保持具に前記基板を複数収納して浸漬させる前記処理槽内の底部に前記基板を前記基板保持具から若干浮かせる突起を備え、この突起が前記基板の下端を浮かせて支持して前記基板保持具が前記基板の倒れを両側端で支持するとともに、前記突起は前記基板の配列方向にリブ状に延在して少なくとも1つ以上配置し、このリブ状の先端に前記基板が当接して支持される複数の溝を設け、この溝形状が前記基板の表裏下端に傾斜して接するV字型形状に設けたことを特徴とする半導体基板洗浄装置。
In a semiconductor substrate cleaning apparatus, a plurality of substrates such as semiconductor wafers are arranged and stored in a dedicated substrate holder, and sequentially immersed and cleaned in a plurality of processing tanks in a batch manner.
A projection is provided at the bottom of the processing tank for accommodating and immersing a plurality of the substrates in the substrate holder, and the projection is provided to slightly float the substrate from the substrate holder, and the projections support and support the lower end of the substrate. The holder supports the fall of the substrate at both ends, and the protrusions extend in a rib shape in the arrangement direction of the substrate and are arranged at least one or more, and the substrate abuts on the rib-shaped tip. A semiconductor substrate cleaning apparatus, wherein a plurality of grooves to be supported are provided, and the grooves are provided in a V-shape in which the grooves are inclined and contact the front and back lower ends of the substrate.
請求項1に記載の半導体基板洗浄装置において、
前記突起は、前記V字型形状の溝内下方に更に切り欠いた補助溝を設け、この補助溝により前記処理槽内で洗浄中の液通りを向上させることを特徴とする半導体基板洗浄装置。
The apparatus for cleaning a semiconductor substrate according to claim 1,
The semiconductor substrate cleaning apparatus according to claim 1, wherein the protrusion further includes a notched auxiliary groove below the V-shaped groove, and the auxiliary groove improves the liquid flow during cleaning in the processing bath.
請求項1または2に記載の半導体基板洗浄装置において、
前記突起には、前記溝を前記リブ状の先端に幅2〜6mm、深さ2〜5mmの寸法でV字型形状に切り欠いて複数形成することを特徴とする半導体基板洗浄装置。
The semiconductor substrate cleaning apparatus according to claim 1 or 2,
The semiconductor substrate cleaning apparatus according to claim 1, wherein the plurality of protrusions are formed by cutting out a plurality of the V-shaped grooves at the rib-shaped tip at a width of 2 to 6 mm and a depth of 2 to 5 mm.
請求項1乃至3のいずれかに記載の半導体基板洗浄装置において、
前記突起は、前記基板を前記基板保持具に収納した状態から10mm〜40mm浮かせることを特徴とする半導体基板洗浄装置。
The semiconductor substrate cleaning apparatus according to any one of claims 1 to 3,
The semiconductor substrate cleaning apparatus according to claim 1, wherein the protrusions float from the state where the substrate is stored in the substrate holder by 10 mm to 40 mm.
請求項1乃至4のいずれかに記載の半導体基板洗浄装置において、
前記突起は、PEEK、PTFE(4フッ化エチレン)、PVDF(3フッ化エチレン)いずれかの材質により形成したことを特徴とする半導体基板洗浄装置。
The semiconductor substrate cleaning apparatus according to any one of claims 1 to 4,
The semiconductor substrate cleaning apparatus, wherein the protrusion is formed of any one of PEEK, PTFE (tetrafluoroethylene), and PVDF (trifluoroethylene).
JP2003111968A 2003-04-16 2003-04-16 Device for cleaning semiconductor substrate Pending JP2004319783A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056865A (en) * 2012-09-11 2014-03-27 Dainippon Screen Mfg Co Ltd Substrate holding member and substrate processing apparatus including the same
WO2023127050A1 (en) * 2021-12-27 2023-07-06 東邦化成株式会社 Substrate-drying device, substrate treatment device, and method for manufacturing substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056865A (en) * 2012-09-11 2014-03-27 Dainippon Screen Mfg Co Ltd Substrate holding member and substrate processing apparatus including the same
WO2023127050A1 (en) * 2021-12-27 2023-07-06 東邦化成株式会社 Substrate-drying device, substrate treatment device, and method for manufacturing substrate
WO2023127393A1 (en) * 2021-12-27 2023-07-06 東邦化成株式会社 Substrate drying device, substrate processing device, and substrate manufacturing method

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