JP7241568B2 - 基板処理装置、基板処理方法および記憶媒体 - Google Patents
基板処理装置、基板処理方法および記憶媒体 Download PDFInfo
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Description
<基板処理装置の構成>
まず、第1の実施形態に係る基板処理装置の構成について図1および図2を参照して説明する。図1は、第1の実施形態に係る基板処理装置の模式的な断面図である。また、図2は、第1の実施形態に係る吐出部の構成を示す図である。
液処理槽2は、貯留槽21と、オーバーフロー槽22と、シール槽23とを備える。液処理槽2は、垂直姿勢(縦向きの状態)で並べられた複数の半導体基板(以下、「ウェハW」と記載する)を収容可能である。液処理槽2では、内部に貯留された処理液に複数のウェハWを浸漬させることによって複数のウェハWを処理する液処理が行われる。ここでは、処理液として脱イオン水が用いられるものとする。また、脱イオン水による複数のウェハWの洗浄処理が液処理として行われるものとする。
乾燥室3は、液処理槽2よりも上方に配置され、貯留槽21と連通する内部空間を有する。乾燥室3は、本体部31と、蓋部32と、遮蔽部33とを備える。本体部31は、上方および下方が開口している。本体部31には、複数(ここでは、2つ)の排気口311が設けられる。2つの排気口311は、複数のウェハWの並び方向(Y軸方向)と直交する方向(X軸方向)に位置する本体部31の側面下部に左右対称に設けられる。2つの排気口311は、排気路312に接続されており、乾燥室3内の雰囲気は、排気口311および排気路312を介して外部へ排出される。
保持部4は、保持体41と、保持体41を支持するシャフト42とを備える。保持体41は、複数のウェハWを垂直姿勢で保持する。また、保持体41は、複数のウェハWを水平方向(ここでは、Y軸方向)に一定の間隔で並べられた状態で保持する。シャフト42は、鉛直方向に沿って延在し、下部において保持体41を支持する。シャフト42は、蓋部32の上部に設けられた図示しない開口に対して摺動可能に挿通される。
移動機構5は、たとえばモータ、ボールネジ、シリンダ等を備えており、保持部4のシャフト42に接続され、シャフト42を昇降させる。移動機構5によってシャフト42が昇降することにより、シャフト42に支持された保持体41が昇降する。これにより、移動機構5は、保持体41に保持された複数のウェハWを貯留槽21と乾燥室3との間で移動させることができる。移動機構5は、制御装置7の制御部71に電気的に接続されており、制御部71によって制御される。
気体吐出部6は、乾燥室3の内部に多段に配置された複数のノズル61~63を備える。複数のノズル61~63は、移動機構5による複数のウェハWの移動経路における側方に配置されており、移動機構5によって上昇する複数のウェハWに向けて有機溶剤の蒸気を吐出する。ここでは、有機溶剤としてIPA(イソプロピルアルコール)が用いられるものとする。すなわち、気体吐出部6は、IPAの蒸気(以下、「IPA蒸気」と記載する)を複数のウェハWに向けて吐出する。なお、有機溶剤は、IPAに限定されない。
制御装置7は、たとえばコンピュータであり、制御部71と記憶部72とを備える。記憶部72は、たとえば、RAM、フラッシュメモリ(Flash Memory)等の半導体メモリ素子、又は、ハードディスク、光ディスク等の記憶装置によって実現され、基板処理装置1において実行される各種の処理を制御するプログラムを記憶する。制御部71は、CPU(Central Processing Unit)、ROM(Read Only Memory)、RAM(Random Access Memory)、入出力ポートなどを有するマイクロコンピュータや各種の回路を含み、記憶部72に記憶されたプログラムを読み出して実行することによって基板処理装置1の動作を制御する。
次に、第1の実施形態に係る基板処理装置1の具体的動作について図3~図13を参照して説明する。図3は、実施形態に係る基板処理装置1が実行する処理の手順の一例を示すフローチャートである。図4は搬入処理の動作例を示す図であり、図5は液処理の動作例を示す図である。図6は引き上げ前処理の動作例を示す図であり、図7~図9は引き上げ処理の動作例を示す図であり、図10は引き上げ後処理の動作例を示す図である。図11は搬出処理の動作例を示す図であり、図12および図13は貯留処理の動作例を示す図である。
上述した第1の実施形態では、乾燥室3に複数のノズル61~63を多段に設けて、下段ノズル61から順にIPA蒸気の供給を開始させることで、複数のウェハWの上昇に合わせてIPA蒸気の吐出位置を上昇させることとした。しかし、複数のウェハWの上昇に合わせてIPA蒸気の吐出位置を上昇させる手法は、上記の例に限らず、ノズル自体を上昇させてもよい。
第1の実施形態では、下段ノズル61がIPA蒸気を斜め下方に吐出する場合の例について説明したが、下段ノズル61は、IPA蒸気を水平に吐出してもよい。下段ノズル61からIPA蒸気を水平または斜め下方に吐出することで、処理液の液面から露出した複数のウェハWに対して早期にIPA蒸気を供給することができる。また、下段ノズル61からIPA蒸気を水平に吐出することで、処理液の液面にIPA蒸気が直接吐出されないようになるため、液面の波立ちを抑制することができる。
1 基板処理装置
2 液処理槽
3 乾燥室
4 保持部
5 移動機構
6 気体吐出部
7 制御装置
61 下段ノズル
61A 可動ノズル
62 中段ノズル
63 上段ノズル
Claims (7)
- 処理液を貯留する液処理槽と、
前記液処理槽に浸漬された複数の基板を前記処理液の液面よりも上方に移動させる移動機構と、
前記複数の基板の前記液面から露出した部分に向けて有機溶剤の蒸気を吐出する吐出部と、
前記複数の基板の上昇に応じて前記吐出部による前記蒸気の吐出位置を上昇させる制御部と
を備え、
前記吐出部は、
前記移動機構に設けられて前記複数の基板とともに上昇するノズルを備える、基板処理装置。 - 処理液を貯留する液処理槽と、
前記液処理槽に浸漬された複数の基板を前記処理液の液面よりも上方に移動させる移動機構と、
前記複数の基板の前記液面から露出した部分に向けて有機溶剤の蒸気を吐出する吐出部と、
前記複数の基板の上昇に応じて前記吐出部による前記蒸気の吐出位置を上昇させる制御部と
を備え、
前記吐出部は、
前記複数の基板とともに上昇するノズルを備え、
前記ノズルは、
前記複数の基板の上方に配置され、前記複数の基板の上端に向けて下向きに前記蒸気を吐出する、基板処理装置。 - 前記吐出部は、
前記複数の基板が前記処理液の液面から露出する前に、前記蒸気の吐出を開始する、請求項1または2に記載の基板処理装置。 - 前記処理液を冷却する冷却部
を備える、請求項1~3のいずれか一つに記載の基板処理装置。 - 液処理槽に貯留された処理液に複数の基板を浸漬させる液処理工程と、
前記液処理工程後、前記複数の基板を移動させる移動機構を用いて前記複数の基板を前記処理液の液面よりも上方に移動させる移動工程と、
前記移動工程において、前記移動機構に設けられて前記複数の基板とともに上昇するノズルから、前記複数の基板の前記液面から露出した部分に向けて有機溶剤の蒸気を吐出する吐出工程と
を含み、
前記吐出工程は、
前記移動機構を用いて前記複数の基板とともに前記ノズルを上昇させることで、前記複数の基板の上昇に応じて前記蒸気の吐出位置を上昇させる、基板処理方法。 - 液処理槽に貯留された処理液に複数の基板を浸漬させる液処理工程と、
前記液処理工程後、前記複数の基板を前記処理液の液面よりも上方に移動させる移動工程と、
前記移動工程において、前記複数の基板の前記液面から露出した部分に向けて有機溶剤の蒸気を吐出する吐出工程と
を含み、
前記吐出工程は、
前記複数の基板の上方に配置され、前記複数の基板の上端に向けて下向きに前記蒸気を吐出するノズルを前記複数の基板とともに上昇させることで、前記複数の基板の上昇に応じて前記蒸気の吐出位置を上昇させる、基板処理方法。 - コンピュータ上で動作し、基板処理装置を制御するプログラムが記憶されたコンピュータ読取可能な記憶媒体であって、
前記プログラムは、実行時に、請求項5または6に記載の基板処理方法が行われるように、コンピュータに前記基板処理装置を制御させる、記憶媒体。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019038819A JP7241568B2 (ja) | 2019-03-04 | 2019-03-04 | 基板処理装置、基板処理方法および記憶媒体 |
CN202010111245.7A CN111653502B (zh) | 2019-03-04 | 2020-02-24 | 基片处理装置、基片处理方法和存储介质 |
KR1020200022736A KR20200106442A (ko) | 2019-03-04 | 2020-02-25 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
US16/804,056 US11404294B2 (en) | 2019-03-04 | 2020-02-28 | Substrate processing apparatus, substrate processing method, and storage medium |
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NL8900480A (nl) * | 1989-02-27 | 1990-09-17 | Philips Nv | Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. |
US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
KR980012044A (ko) * | 1996-03-01 | 1998-04-30 | 히가시 데츠로 | 기판건조장치 및 기판건조방법 |
JP3171821B2 (ja) * | 1996-09-27 | 2001-06-04 | 東京エレクトロン株式会社 | 洗浄装置及び洗浄方法 |
JP3156075B2 (ja) * | 1997-06-27 | 2001-04-16 | 東京エレクトロン株式会社 | 乾燥処理装置 |
JP3348054B2 (ja) | 1999-09-27 | 2002-11-20 | 大日本スクリーン製造株式会社 | 基板の洗浄・乾燥処理方法ならびにその処理装置 |
JP3560962B1 (ja) * | 2003-07-02 | 2004-09-02 | エス・イー・エス株式会社 | 基板処理法及び基板処理装置 |
JP2005166847A (ja) * | 2003-12-01 | 2005-06-23 | Ses Co Ltd | 基板処理法及び基板処理装置 |
KR101133394B1 (ko) * | 2005-06-22 | 2012-04-09 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법과 컴퓨터 판독 가능한 기억 매체 |
JP4545083B2 (ja) * | 2005-11-08 | 2010-09-15 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP5104174B2 (ja) * | 2007-10-01 | 2012-12-19 | 富士通株式会社 | 洗浄乾燥装置及び洗浄乾燥方法 |
KR101421752B1 (ko) * | 2008-10-21 | 2014-07-22 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
JP2010181536A (ja) * | 2009-02-04 | 2010-08-19 | Hitachi High-Technologies Corp | 乾燥装置及びそれを用いた乾燥方法 |
US11443962B2 (en) * | 2009-06-17 | 2022-09-13 | Brooks Automation Us, Llc | Integrated handling system for semiconductor articles |
JP2013069979A (ja) * | 2011-09-26 | 2013-04-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5917121B2 (ja) * | 2011-12-14 | 2016-05-11 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
US11024507B2 (en) * | 2016-03-31 | 2021-06-01 | Tokyo Electron Limited | Substrate liquid processing apparatus, substrate liquid processing method, and computer-redable storage medium having substrate liquid processing program stored therein |
JP6887265B2 (ja) * | 2017-02-28 | 2021-06-16 | 株式会社Screenホールディングス | 基板処理装置 |
JP6979826B2 (ja) * | 2017-08-04 | 2021-12-15 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
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