MX9207221A - Proceso de revestimiento que utiliza gas de fase densa. - Google Patents

Proceso de revestimiento que utiliza gas de fase densa.

Info

Publication number
MX9207221A
MX9207221A MX9207221A MX9207221A MX9207221A MX 9207221 A MX9207221 A MX 9207221A MX 9207221 A MX9207221 A MX 9207221A MX 9207221 A MX9207221 A MX 9207221A MX 9207221 A MX9207221 A MX 9207221A
Authority
MX
Mexico
Prior art keywords
dense phase
phase gas
substrate
coating process
coating
Prior art date
Application number
MX9207221A
Other languages
English (en)
Inventor
David P Jackson
Orval F Buck
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of MX9207221A publication Critical patent/MX9207221A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/90—Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Un proceso para revestir un substrato con un material seleccionado o elegido que comprende colocar el substrato en una cámara de revestimiento y poner en contacto el substrato con una mezcla del material de revestimiento seleccionado en un gas de fase densa elegido, a una temperatura seleccionada y a una presión igual o superior a la presión crítica del gas de fase densa, por un período de tiempo que es suficiente para permitir la penetración completa de la mezcla en todas las superficies del substrato.
MX9207221A 1991-12-12 1992-12-11 Proceso de revestimiento que utiliza gas de fase densa. MX9207221A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80575391A 1991-12-12 1991-12-12

Publications (1)

Publication Number Publication Date
MX9207221A true MX9207221A (es) 1993-12-01

Family

ID=25192423

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9207221A MX9207221A (es) 1991-12-12 1992-12-11 Proceso de revestimiento que utiliza gas de fase densa.

Country Status (7)

Country Link
US (1) US5403621A (es)
EP (1) EP0546452B1 (es)
JP (1) JPH05345985A (es)
KR (1) KR930019861A (es)
CA (1) CA2079629A1 (es)
DE (1) DE69225299T2 (es)
MX (1) MX9207221A (es)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0791093B1 (en) * 1994-11-09 2001-04-11 R.R. STREET & CO., INC. Method and system for rejuvenating pressurized fluid solvents used in cleaning substrates
US5881577A (en) * 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5789027A (en) * 1996-11-12 1998-08-04 University Of Massachusetts Method of chemically depositing material onto a substrate
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
EP0901153B1 (en) 1997-09-02 2009-07-15 Ebara Corporation Method and apparatus for plating a substrate
JP3945872B2 (ja) * 1997-09-16 2007-07-18 株式会社荏原製作所 めっき前処理方法
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
DK199801455A (da) * 1998-11-10 2000-05-11 Fls Miljoe A S Fremgangsmåde til imprægnering eller ekstrahering af et harpiksholdigt træsubstrat
US6748960B1 (en) * 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6689700B1 (en) * 1999-11-02 2004-02-10 University Of Massachusetts Chemical fluid deposition method for the formation of metal and metal alloy films on patterned and unpatterned substrates
US6526355B1 (en) * 2000-03-30 2003-02-25 Lam Research Corporation Integrated full wavelength spectrometer for wafer processing
US7672747B2 (en) * 2000-03-30 2010-03-02 Lam Research Corporation Recipe-and-component control module and methods thereof
US7356580B1 (en) 2000-03-30 2008-04-08 Lam Research Corporation Plug and play sensor integration for a process module
AU2001255656A1 (en) 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
AU2001290171A1 (en) 2000-07-26 2002-02-05 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US20040011378A1 (en) * 2001-08-23 2004-01-22 Jackson David P Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays
US20030215572A1 (en) * 2000-10-10 2003-11-20 Naoki Nojiri Process for preparing composite particles
US6427544B1 (en) * 2001-03-14 2002-08-06 United Technologies Corporation Environmentally friendly ultra-high sensitivity liquid penetrant inspection process and system
CA2444296A1 (en) * 2001-04-10 2002-10-24 Supercritical Systems Inc. High pressure processing chamber for semiconductor substrate including flow enhancing features
EP1446356A4 (en) * 2001-11-21 2005-04-06 Univ Massachusetts MESOPOROUS MATERIALS AND METHOD
WO2003064065A1 (en) * 2002-01-25 2003-08-07 Supercritical Systems Inc. Method for reducing the formation of contaminants during supercritical carbon dioxide processes
JP2006508521A (ja) * 2002-02-15 2006-03-09 東京エレクトロン株式会社 溶剤浴と超臨界ｃｏ２を用いたレジストの乾燥
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
AU2003220039A1 (en) 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US20040003828A1 (en) * 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
US20040072706A1 (en) * 2002-03-22 2004-04-15 Arena-Foster Chantal J. Removal of contaminants using supercritical processing
US6653236B2 (en) * 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions
US7341947B2 (en) * 2002-03-29 2008-03-11 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US20040045578A1 (en) * 2002-05-03 2004-03-11 Jackson David P. Method and apparatus for selective treatment of a precision substrate surface
US20040016436A1 (en) * 2002-07-26 2004-01-29 Charles Thomas Adsorbents for smoking articles comprising a non-volatile organic compound applied using a supercritical fluid
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
US6875285B2 (en) * 2003-04-24 2005-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for dampening high pressure impact on porous materials
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
DE102004037902A1 (de) * 2004-08-05 2006-03-16 Robert Bosch Gmbh Verfahren zur Abscheidung einer Anti-Haftungsschicht
US7307019B2 (en) * 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US20060065288A1 (en) * 2004-09-30 2006-03-30 Darko Babic Supercritical fluid processing system having a coating on internal members and a method of using
US20060102591A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method and system for treating a substrate using a supercritical fluid
US20060102208A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited System for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102590A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry
US20060102204A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for removing a residue from a substrate using supercritical carbon dioxide processing
US7491036B2 (en) * 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060130966A1 (en) * 2004-12-20 2006-06-22 Darko Babic Method and system for flowing a supercritical fluid in a high pressure processing system
US7434590B2 (en) * 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) * 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7291565B2 (en) * 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US20060180572A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Removal of post etch residue for a substrate with open metal surfaces
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US20060255012A1 (en) * 2005-05-10 2006-11-16 Gunilla Jacobson Removal of particles from substrate surfaces using supercritical processing
US7789971B2 (en) * 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) * 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
WO2006138727A2 (en) * 2005-06-17 2006-12-28 The Regents Of The University Of Michigan Apparatus and method of producing net-shape components from alloy sheets
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
FR2891656B1 (fr) * 2005-10-03 2009-05-08 Nexans Sa Cable de transmission de donnees et/ou d'energie a revetement ignifuge et procede d'ignifugation d'un tel revetement
US7588995B2 (en) * 2005-11-14 2009-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method to create damage-free porous low-k dielectric films and structures resulting therefrom
US7565220B2 (en) * 2006-09-28 2009-07-21 Lam Research Corporation Targeted data collection architecture
US7814046B2 (en) * 2006-09-29 2010-10-12 Lam Research Corporation Dynamic component-tracking system and methods therefor
US7951723B2 (en) * 2006-10-24 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated etch and supercritical CO2 process and chamber design
JP5202626B2 (ja) * 2007-06-29 2013-06-05 スヴェトリー・テクノロジーズ・アーベー 急速膨張溶液により固体上に超疎水性表面を調製する方法
CN101459050B (zh) * 2007-12-14 2013-03-27 盛美半导体设备（上海）有限公司 电化学或化学沉积金属层前预浸润晶片表面的方法和装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2853066A1 (de) * 1978-12-08 1980-06-26 August Prof Dipl Phys D Winsel Verfahren zur abdeckung der oberflaeche von insbesondere poroesen pulvern oder poroesen koerpern mit schuetzenden oder schmueckenden schichten
US4582731A (en) * 1983-09-01 1986-04-15 Battelle Memorial Institute Supercritical fluid molecular spray film deposition and powder formation
US4737384A (en) * 1985-11-01 1988-04-12 Allied Corporation Deposition of thin films using supercritical fluids
DE3737455A1 (de) * 1986-11-06 1988-05-19 Westinghouse Electric Corp Einrichtung und verfahren zum erzeugen von farbmustern
US4737984A (en) * 1986-12-01 1988-04-12 Northern Telecom Limited Dial tone detector
DE3787533T2 (de) * 1987-12-21 1994-01-20 Union Carbide Corp Verwendung von superkritischen Flüssigkeiten als Verdünner beim Aufsprühen von Überzügen.
US5057342A (en) * 1987-12-21 1991-10-15 Union Carbide Chemicals And Plastics Technology Corporation Methods and apparatus for obtaining a feathered spray when spraying liquids by airless techniques
EP0350909B1 (en) * 1988-07-14 1993-10-20 Union Carbide Corporation Electrostatic liquid spray application of coatings with supercritical fluids as diluents and spraying from an orifice
US5066522A (en) * 1988-07-14 1991-11-19 Union Carbide Chemicals And Plastics Technology Corporation Supercritical fluids as diluents in liquid spray applications of adhesives
US5108799A (en) * 1988-07-14 1992-04-28 Union Carbide Chemicals & Plastics Technology Corporation Liquid spray application of coatings with supercritical fluids as diluents and spraying from an orifice
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
ES2042110T3 (es) * 1989-03-22 1993-12-01 Union Carbide Chemicals And Plastics Company, Inc. Composiciones precursoras para reavestimiento.
EP0388915B1 (en) * 1989-03-22 1993-10-06 Union Carbide Chemicals And Plastics Company, Inc. Precursor coating compositions
US5009367A (en) * 1989-03-22 1991-04-23 Union Carbide Chemicals And Plastics Technology Corporation Methods and apparatus for obtaining wider sprays when spraying liquids by airless techniques
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
FR2659870B1 (fr) * 1990-03-23 1993-03-12 Degremont Perfectionnements apportes aux filtres a membranes, pour ultra ou micro-filtration de liquides, notamment d'eau.
US4970093A (en) * 1990-04-12 1990-11-13 University Of Colorado Foundation Chemical deposition methods using supercritical fluid solutions
US5215253A (en) * 1990-08-30 1993-06-01 Nordson Corporation Method and apparatus for forming and dispersing single and multiple phase coating material containing fluid diluent
US5171613A (en) * 1990-09-21 1992-12-15 Union Carbide Chemicals & Plastics Technology Corporation Apparatus and methods for application of coatings with supercritical fluids as diluents by spraying from an orifice
JPH04222662A (ja) * 1990-12-25 1992-08-12 Nippon Steel Chem Co Ltd 固体表面へのポリマー皮膜形成方法
US5197800A (en) * 1991-06-28 1993-03-30 Nordson Corporation Method for forming coating material formulations substantially comprised of a saturated resin rich phase
JP3101367B2 (ja) * 1991-09-09 2000-10-23 三菱製紙株式会社 剥離用シートおよびその製造方法

Also Published As

Publication number Publication date
EP0546452A1 (en) 1993-06-16
JPH05345985A (ja) 1993-12-27
DE69225299T2 (de) 1998-12-17
US5403621A (en) 1995-04-04
DE69225299D1 (de) 1998-06-04
EP0546452B1 (en) 1998-04-29
KR930019861A (ko) 1993-10-19
CA2079629A1 (en) 1993-06-13

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