AU2000266442A1 - Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process - Google Patents

Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process

Info

Publication number
AU2000266442A1
AU2000266442A1 AU2000266442A AU6644200A AU2000266442A1 AU 2000266442 A1 AU2000266442 A1 AU 2000266442A1 AU 2000266442 A AU2000266442 A AU 2000266442A AU 6644200 A AU6644200 A AU 6644200A AU 2000266442 A1 AU2000266442 A1 AU 2000266442A1
Authority
AU
Australia
Prior art keywords
photoresist
semiconductors
removal
carbon dioxide
supercritical carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000266442A
Inventor
William H. Mullee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2000266442A1 publication Critical patent/AU2000266442A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2000266442A 2000-08-14 2000-08-14 Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process Abandoned AU2000266442A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/022454 WO2002015251A1 (en) 2000-08-14 2000-08-14 Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process

Publications (1)

Publication Number Publication Date
AU2000266442A1 true AU2000266442A1 (en) 2002-02-25

Family

ID=21741687

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000266442A Abandoned AU2000266442A1 (en) 2000-08-14 2000-08-14 Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process

Country Status (6)

Country Link
EP (1) EP1309990A1 (en)
JP (1) JP2004507087A (en)
KR (1) KR100559017B1 (en)
CN (1) CN1246888C (en)
AU (1) AU2000266442A1 (en)
WO (1) WO2002015251A1 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
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JP2002237481A (en) * 2001-02-09 2002-08-23 Kobe Steel Ltd Method of cleaning microscopic structure
US7557073B2 (en) * 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
JP2003224099A (en) 2002-01-30 2003-08-08 Sony Corp Surface treatment method
US6953654B2 (en) 2002-03-14 2005-10-11 Tokyo Electron Limited Process and apparatus for removing a contaminant from a substrate
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
CN101147908A (en) 2002-05-20 2008-03-26 松下电器产业株式会社 Washing method
US20030217764A1 (en) * 2002-05-23 2003-11-27 Kaoru Masuda Process and composition for removing residues from the microstructure of an object
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
US7267727B2 (en) 2002-09-24 2007-09-11 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids and ultrasonic energy
US6683008B1 (en) 2002-11-19 2004-01-27 International Business Machines Corporation Process of removing ion-implanted photoresist from a workpiece
EP1459812A1 (en) * 2003-03-21 2004-09-22 Linde Aktiengesellschaft Parts cleaning
CN100338153C (en) * 2003-03-26 2007-09-19 Tdk株式会社 Method for producing stripping thin film
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US6857437B2 (en) * 2003-06-18 2005-02-22 Ekc Technology, Inc. Automated dense phase fluid cleaning system
DE102004029077B4 (en) * 2003-06-26 2010-07-22 Samsung Electronics Co., Ltd., Suwon Apparatus and method for removing a photoresist from a substrate
US20050029492A1 (en) 2003-08-05 2005-02-10 Hoshang Subawalla Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols
US20050261150A1 (en) * 2004-05-21 2005-11-24 Battelle Memorial Institute, A Part Interest Reactive fluid systems for removing deposition materials and methods for using same
US20050288485A1 (en) * 2004-06-24 2005-12-29 Mahl Jerry M Method and apparatus for pretreatment of polymeric materials utilized in carbon dioxide purification, delivery and storage systems
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7195676B2 (en) 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
KR100744145B1 (en) * 2006-08-07 2007-08-01 삼성전자주식회사 Apparatus and method for treating wafers using supercritical fluid
CN102298276B (en) * 2010-06-25 2013-03-06 中国科学院微电子研究所 Silicon wafer degumming device
JP5685918B2 (en) * 2010-12-10 2015-03-18 富士通株式会社 Manufacturing method of semiconductor device
CN102280372B (en) * 2011-09-05 2016-04-06 上海集成电路研发中心有限公司 A kind of cleaning method of semi-conductor silicon chip
WO2013158526A1 (en) * 2012-04-17 2013-10-24 Praxair Technology, Inc. System for delivery of purified multiple phases of carbon dioxide to a process tool
CN105517343A (en) * 2016-01-25 2016-04-20 东莞联桥电子有限公司 Method for resistor integration on microwave printed circuit board
WO2019038679A1 (en) * 2017-08-21 2019-02-28 Tokyo Electron Limited Optical sensor for phase determination
US10695804B2 (en) 2018-01-25 2020-06-30 Applied Materials, Inc. Equipment cleaning apparatus and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185296A (en) * 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
US5783082A (en) * 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
AU3360399A (en) * 1998-03-30 1999-10-18 Leisa B. Davenhall Composition and method for removing photoresist materials from electronic components

Also Published As

Publication number Publication date
CN1246888C (en) 2006-03-22
KR20030024873A (en) 2003-03-26
EP1309990A1 (en) 2003-05-14
KR100559017B1 (en) 2006-03-10
JP2004507087A (en) 2004-03-04
CN1454392A (en) 2003-11-05
WO2002015251A1 (en) 2002-02-21

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