JP2009182286A5 - - Google Patents

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Publication number
JP2009182286A5
JP2009182286A5 JP2008022317A JP2008022317A JP2009182286A5 JP 2009182286 A5 JP2009182286 A5 JP 2009182286A5 JP 2008022317 A JP2008022317 A JP 2008022317A JP 2008022317 A JP2008022317 A JP 2008022317A JP 2009182286 A5 JP2009182286 A5 JP 2009182286A5
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JP
Japan
Prior art keywords
gas
processing chamber
catalyst
supplying
substrate
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JP2008022317A
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English (en)
Japanese (ja)
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JP5341358B2 (ja
JP2009182286A (ja
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Priority to JP2008022317A priority Critical patent/JP5341358B2/ja
Priority claimed from JP2008022317A external-priority patent/JP5341358B2/ja
Publication of JP2009182286A publication Critical patent/JP2009182286A/ja
Publication of JP2009182286A5 publication Critical patent/JP2009182286A5/ja
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JP2008022317A 2008-02-01 2008-02-01 半導体装置の製造方法及び基板処理装置及び基板処理方法 Active JP5341358B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008022317A JP5341358B2 (ja) 2008-02-01 2008-02-01 半導体装置の製造方法及び基板処理装置及び基板処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008022317A JP5341358B2 (ja) 2008-02-01 2008-02-01 半導体装置の製造方法及び基板処理装置及び基板処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013094007A Division JP2013179332A (ja) 2013-04-26 2013-04-26 半導体装置の製造方法および基板処理装置

Publications (3)

Publication Number Publication Date
JP2009182286A JP2009182286A (ja) 2009-08-13
JP2009182286A5 true JP2009182286A5 (enExample) 2011-01-27
JP5341358B2 JP5341358B2 (ja) 2013-11-13

Family

ID=41035984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008022317A Active JP5341358B2 (ja) 2008-02-01 2008-02-01 半導体装置の製造方法及び基板処理装置及び基板処理方法

Country Status (1)

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JP (1) JP5341358B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6155063B2 (ja) 2013-03-19 2017-06-28 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及びプログラム
JP5998101B2 (ja) * 2013-05-24 2016-09-28 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及びプログラム
JP2015069987A (ja) 2013-09-26 2015-04-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP6438038B2 (ja) * 2014-09-19 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置および記録媒体
JP6523080B2 (ja) 2015-07-10 2019-05-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505668B1 (ko) * 2002-07-08 2005-08-03 삼성전자주식회사 원자층 증착 방법에 의한 실리콘 산화막 형성 방법

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