JP5341358B2 - 半導体装置の製造方法及び基板処理装置及び基板処理方法 - Google Patents

半導体装置の製造方法及び基板処理装置及び基板処理方法 Download PDF

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JP5341358B2
JP5341358B2 JP2008022317A JP2008022317A JP5341358B2 JP 5341358 B2 JP5341358 B2 JP 5341358B2 JP 2008022317 A JP2008022317 A JP 2008022317A JP 2008022317 A JP2008022317 A JP 2008022317A JP 5341358 B2 JP5341358 B2 JP 5341358B2
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processing chamber
substrate
anhydrous pyridine
gas
supplying
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JP2009182286A5 (enExample
JP2009182286A (ja
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和幸 奥田
謙和 水野
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP6155063B2 (ja) * 2013-03-19 2017-06-28 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及びプログラム
JP5998101B2 (ja) * 2013-05-24 2016-09-28 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及びプログラム
JP2015069987A (ja) 2013-09-26 2015-04-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP6438038B2 (ja) * 2014-09-19 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置および記録媒体
JP6523080B2 (ja) * 2015-07-10 2019-05-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

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KR100505668B1 (ko) * 2002-07-08 2005-08-03 삼성전자주식회사 원자층 증착 방법에 의한 실리콘 산화막 형성 방법

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