NO20075542L - Sammensetning for rensing av ioneimplantert fotoresist i innledende del av produksjonslinjer - Google Patents

Sammensetning for rensing av ioneimplantert fotoresist i innledende del av produksjonslinjer

Info

Publication number
NO20075542L
NO20075542L NO20075542A NO20075542A NO20075542L NO 20075542 L NO20075542 L NO 20075542L NO 20075542 A NO20075542 A NO 20075542A NO 20075542 A NO20075542 A NO 20075542A NO 20075542 L NO20075542 L NO 20075542L
Authority
NO
Norway
Prior art keywords
composition
purification
ion implanted
implanted photoresist
production lines
Prior art date
Application number
NO20075542A
Other languages
English (en)
Inventor
Sean Michael Kane
Steven A Lippy
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of NO20075542L publication Critical patent/NO20075542L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

En innledende del av linjen (FEOL) strippe- og rensesammensetning for rensing av uasket ioneimplantert fotoresist fra et skivesubstrat som omfatter: a) i det minste et organisk strippeløsningsmiddel, b) fluoridioner fra minst et av ammoniumfluorid, ammoniumbifluorid eller hydrogenfluorid, c) minst et surgj ørende middel valgt fiia uorganiske eller organiske syrer, og d) vann, der et oksidasjonsmiddel eventuelt også er tilstede i sammensetningen.
NO20075542A 2005-04-04 2007-11-01 Sammensetning for rensing av ioneimplantert fotoresist i innledende del av produksjonslinjer NO20075542L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66793205P 2005-04-04 2005-04-04
PCT/US2006/008829 WO2006107517A2 (en) 2005-04-04 2006-03-13 Composition for cleaning ion implanted photoresist in front end of line applications

Publications (1)

Publication Number Publication Date
NO20075542L true NO20075542L (no) 2007-11-01

Family

ID=36928400

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20075542A NO20075542L (no) 2005-04-04 2007-11-01 Sammensetning for rensing av ioneimplantert fotoresist i innledende del av produksjonslinjer

Country Status (13)

Country Link
US (1) US8044009B2 (no)
EP (1) EP1875493A2 (no)
JP (1) JP2008535250A (no)
KR (1) KR20070117624A (no)
CN (1) CN100555580C (no)
BR (1) BRPI0609587A2 (no)
CA (1) CA2603393A1 (no)
IL (1) IL186146A0 (no)
NO (1) NO20075542L (no)
SG (1) SG161211A1 (no)
TW (1) TW200702944A (no)
WO (1) WO2006107517A2 (no)
ZA (1) ZA200758580B (no)

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JP4952257B2 (ja) * 2007-01-11 2012-06-13 東ソー株式会社 半導体製造装置用部材の洗浄用組成物及びそれを用いた洗浄方法
US20090029274A1 (en) * 2007-07-25 2009-01-29 3M Innovative Properties Company Method for removing contamination with fluorinated compositions
WO2009058278A1 (en) 2007-10-29 2009-05-07 Ekc Technology, Inc Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
US8802609B2 (en) 2007-10-29 2014-08-12 Ekc Technology Inc Nitrile and amidoxime compounds and methods of preparation for semiconductor processing
WO2009085072A1 (en) * 2007-12-31 2009-07-09 Ekc Technology, Inc Composition comprising chelating agents containing amidoxime compounds
WO2009087492A1 (en) 2008-01-09 2009-07-16 Freescale Semiconductor, Inc. Semiconductor processing method
KR101570256B1 (ko) * 2008-02-29 2015-11-18 아반토르 퍼포먼스 머티리얼스, 인크. 마이크로전자 기재 세정용 조성물
US7838483B2 (en) 2008-10-29 2010-11-23 Ekc Technology, Inc. Process of purification of amidoxime containing cleaning solutions and their use
AU2010218275A1 (en) * 2009-02-25 2011-10-20 Avantor Performance Materials, Inc. Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
US8252515B2 (en) * 2009-10-13 2012-08-28 United Microelectronics Corp. Method for removing photoresist
JP5871562B2 (ja) * 2011-11-01 2016-03-01 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
US8951950B2 (en) * 2012-03-12 2015-02-10 Ekc Technology Aluminum post-etch residue removal with simultaneous surface passivation
JP2015517691A (ja) * 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス
US8853081B2 (en) * 2012-12-27 2014-10-07 Intermolecular, Inc. High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
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EP3084809A4 (en) * 2013-12-20 2017-08-23 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
CN116144429B (zh) * 2022-12-22 2024-04-19 湖北兴福电子材料股份有限公司 一种含碳膜层的清洗液及清洗方法

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Also Published As

Publication number Publication date
CA2603393A1 (en) 2006-10-12
EP1875493A2 (en) 2008-01-09
TW200702944A (en) 2007-01-16
WO2006107517A3 (en) 2006-12-14
ZA200758580B (en) 2008-08-27
WO2006107517A2 (en) 2006-10-12
BRPI0609587A2 (pt) 2010-04-20
SG161211A1 (en) 2010-05-27
IL186146A0 (en) 2008-01-20
US8044009B2 (en) 2011-10-25
KR20070117624A (ko) 2007-12-12
US20080171682A1 (en) 2008-07-17
CN100555580C (zh) 2009-10-28
JP2008535250A (ja) 2008-08-28
CN101156232A (zh) 2008-04-02

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