JP2006156995A5 - - Google Patents
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- Publication number
- JP2006156995A5 JP2006156995A5 JP2005319637A JP2005319637A JP2006156995A5 JP 2006156995 A5 JP2006156995 A5 JP 2006156995A5 JP 2005319637 A JP2005319637 A JP 2005319637A JP 2005319637 A JP2005319637 A JP 2005319637A JP 2006156995 A5 JP2006156995 A5 JP 2006156995A5
- Authority
- JP
- Japan
- Prior art keywords
- annealing
- insulating film
- forming method
- film forming
- seconds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000137 annealing Methods 0.000 claims 19
- 238000000034 method Methods 0.000 claims 15
- 238000005121 nitriding Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005319637A JP4965849B2 (ja) | 2004-11-04 | 2005-11-02 | 絶縁膜形成方法およびコンピュータ記録媒体 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004320743 | 2004-11-04 | ||
| JP2004320743 | 2004-11-04 | ||
| JP2005319637A JP4965849B2 (ja) | 2004-11-04 | 2005-11-02 | 絶縁膜形成方法およびコンピュータ記録媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006156995A JP2006156995A (ja) | 2006-06-15 |
| JP2006156995A5 true JP2006156995A5 (enExample) | 2008-11-06 |
| JP4965849B2 JP4965849B2 (ja) | 2012-07-04 |
Family
ID=36634831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005319637A Expired - Fee Related JP4965849B2 (ja) | 2004-11-04 | 2005-11-02 | 絶縁膜形成方法およびコンピュータ記録媒体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4965849B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7429540B2 (en) * | 2003-03-07 | 2008-09-30 | Applied Materials, Inc. | Silicon oxynitride gate dielectric formation using multiple annealing steps |
| US7429538B2 (en) * | 2005-06-27 | 2008-09-30 | Applied Materials, Inc. | Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric |
| RU2390883C1 (ru) * | 2006-09-13 | 2010-05-27 | Кэнон АНЕЛВА Корпорейшн | Способ изготовления элемента с магниторезистивным эффектом и многокамерное устройство для изготовления элемента с магниторезистивным эффектом |
| US7972973B2 (en) | 2006-09-29 | 2011-07-05 | Tokyo Electron Limited | Method for forming silicon oxide film, plasma processing apparatus and storage medium |
| JP5166297B2 (ja) | 2009-01-21 | 2013-03-21 | 東京エレクトロン株式会社 | 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 |
| JP6387264B2 (ja) * | 2013-08-02 | 2018-09-05 | スタンレー電気株式会社 | ｐ型ＺｎＯ系半導体層の製造方法、及び、ＺｎＯ系半導体素子の製造方法 |
| JP6163442B2 (ja) * | 2014-03-05 | 2017-07-12 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030019427A1 (en) * | 2001-07-24 | 2003-01-30 | Applied Materials, Inc. | In situ stabilized high concentration BPSG films for PMD application |
| JP2003060198A (ja) * | 2001-08-10 | 2003-02-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| TWI235433B (en) * | 2002-07-17 | 2005-07-01 | Tokyo Electron Ltd | Oxide film forming method, oxide film forming apparatus and electronic device material |
| JP2004119899A (ja) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
| JP2004247528A (ja) * | 2003-02-14 | 2004-09-02 | Sony Corp | 半導体装置の製造方法 |
-
2005
- 2005-11-02 JP JP2005319637A patent/JP4965849B2/ja not_active Expired - Fee Related
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