JP4965849B2 - 絶縁膜形成方法およびコンピュータ記録媒体 - Google Patents
絶縁膜形成方法およびコンピュータ記録媒体 Download PDFInfo
- Publication number
- JP4965849B2 JP4965849B2 JP2005319637A JP2005319637A JP4965849B2 JP 4965849 B2 JP4965849 B2 JP 4965849B2 JP 2005319637 A JP2005319637 A JP 2005319637A JP 2005319637 A JP2005319637 A JP 2005319637A JP 4965849 B2 JP4965849 B2 JP 4965849B2
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- Prior art keywords
- annealing
- insulating film
- wafer
- plasma
- temperature
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 80
- 238000000137 annealing Methods 0.000 claims description 149
- 238000005121 nitriding Methods 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 80
- 239000010408 film Substances 0.000 description 78
- 150000002500 ions Chemical class 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910007991 Si-N Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910006294 Si—N Inorganic materials 0.000 description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910018557 Si O Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- -1 AlN Chemical compound 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005319637A JP4965849B2 (ja) | 2004-11-04 | 2005-11-02 | 絶縁膜形成方法およびコンピュータ記録媒体 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004320743 | 2004-11-04 | ||
| JP2004320743 | 2004-11-04 | ||
| JP2005319637A JP4965849B2 (ja) | 2004-11-04 | 2005-11-02 | 絶縁膜形成方法およびコンピュータ記録媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006156995A JP2006156995A (ja) | 2006-06-15 |
| JP2006156995A5 JP2006156995A5 (enExample) | 2008-11-06 |
| JP4965849B2 true JP4965849B2 (ja) | 2012-07-04 |
Family
ID=36634831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005319637A Expired - Fee Related JP4965849B2 (ja) | 2004-11-04 | 2005-11-02 | 絶縁膜形成方法およびコンピュータ記録媒体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4965849B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7429540B2 (en) * | 2003-03-07 | 2008-09-30 | Applied Materials, Inc. | Silicon oxynitride gate dielectric formation using multiple annealing steps |
| US7429538B2 (en) * | 2005-06-27 | 2008-09-30 | Applied Materials, Inc. | Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric |
| RU2390883C1 (ru) * | 2006-09-13 | 2010-05-27 | Кэнон АНЕЛВА Корпорейшн | Способ изготовления элемента с магниторезистивным эффектом и многокамерное устройство для изготовления элемента с магниторезистивным эффектом |
| WO2008038788A1 (en) * | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Method for forming silicon oxide film, plasma processing apparatus and storage medium |
| JP5166297B2 (ja) | 2009-01-21 | 2013-03-21 | 東京エレクトロン株式会社 | 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 |
| JP6387264B2 (ja) * | 2013-08-02 | 2018-09-05 | スタンレー電気株式会社 | ｐ型ＺｎＯ系半導体層の製造方法、及び、ＺｎＯ系半導体素子の製造方法 |
| JP6163442B2 (ja) * | 2014-03-05 | 2017-07-12 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030019427A1 (en) * | 2001-07-24 | 2003-01-30 | Applied Materials, Inc. | In situ stabilized high concentration BPSG films for PMD application |
| JP2003060198A (ja) * | 2001-08-10 | 2003-02-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| TWI235433B (en) * | 2002-07-17 | 2005-07-01 | Tokyo Electron Ltd | Oxide film forming method, oxide film forming apparatus and electronic device material |
| JP2004119899A (ja) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
| JP2004247528A (ja) * | 2003-02-14 | 2004-09-02 | Sony Corp | 半導体装置の製造方法 |
-
2005
- 2005-11-02 JP JP2005319637A patent/JP4965849B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006156995A (ja) | 2006-06-15 |
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