JP4965849B2 - 絶縁膜形成方法およびコンピュータ記録媒体 - Google Patents

絶縁膜形成方法およびコンピュータ記録媒体 Download PDF

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JP4965849B2
JP4965849B2 JP2005319637A JP2005319637A JP4965849B2 JP 4965849 B2 JP4965849 B2 JP 4965849B2 JP 2005319637 A JP2005319637 A JP 2005319637A JP 2005319637 A JP2005319637 A JP 2005319637A JP 4965849 B2 JP4965849 B2 JP 4965849B2
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annealing
insulating film
wafer
plasma
temperature
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JP2006156995A5 (enExample
JP2006156995A (ja
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吉宏 佐藤
友絵 中山
浩 小林
良規 大崎
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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JP2005319637A 2004-11-04 2005-11-02 絶縁膜形成方法およびコンピュータ記録媒体 Expired - Fee Related JP4965849B2 (ja)

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JP2005319637A JP4965849B2 (ja) 2004-11-04 2005-11-02 絶縁膜形成方法およびコンピュータ記録媒体

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JP2004320743 2004-11-04
JP2004320743 2004-11-04
JP2005319637A JP4965849B2 (ja) 2004-11-04 2005-11-02 絶縁膜形成方法およびコンピュータ記録媒体

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JP2006156995A JP2006156995A (ja) 2006-06-15
JP2006156995A5 JP2006156995A5 (enExample) 2008-11-06
JP4965849B2 true JP4965849B2 (ja) 2012-07-04

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7429540B2 (en) * 2003-03-07 2008-09-30 Applied Materials, Inc. Silicon oxynitride gate dielectric formation using multiple annealing steps
US7429538B2 (en) * 2005-06-27 2008-09-30 Applied Materials, Inc. Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric
RU2390883C1 (ru) * 2006-09-13 2010-05-27 Кэнон АНЕЛВА Корпорейшн Способ изготовления элемента с магниторезистивным эффектом и многокамерное устройство для изготовления элемента с магниторезистивным эффектом
US7972973B2 (en) 2006-09-29 2011-07-05 Tokyo Electron Limited Method for forming silicon oxide film, plasma processing apparatus and storage medium
JP5166297B2 (ja) 2009-01-21 2013-03-21 東京エレクトロン株式会社 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体
JP6387264B2 (ja) * 2013-08-02 2018-09-05 スタンレー電気株式会社 ｐ型ＺｎＯ系半導体層の製造方法、及び、ＺｎＯ系半導体素子の製造方法
JP6163442B2 (ja) * 2014-03-05 2017-07-12 株式会社東芝 半導体製造装置及び半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030019427A1 (en) * 2001-07-24 2003-01-30 Applied Materials, Inc. In situ stabilized high concentration BPSG films for PMD application
JP2003060198A (ja) * 2001-08-10 2003-02-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
TWI235433B (en) * 2002-07-17 2005-07-01 Tokyo Electron Ltd Oxide film forming method, oxide film forming apparatus and electronic device material
JP2004119899A (ja) * 2002-09-27 2004-04-15 Toshiba Corp 半導体装置の製造方法および半導体装置
JP2004247528A (ja) * 2003-02-14 2004-09-02 Sony Corp 半導体装置の製造方法

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