JP2009545895A5 - - Google Patents
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- Publication number
- JP2009545895A5 JP2009545895A5 JP2009523906A JP2009523906A JP2009545895A5 JP 2009545895 A5 JP2009545895 A5 JP 2009545895A5 JP 2009523906 A JP2009523906 A JP 2009523906A JP 2009523906 A JP2009523906 A JP 2009523906A JP 2009545895 A5 JP2009545895 A5 JP 2009545895A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- substrate
- layer
- silicon
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 71
- 229910052757 nitrogen Inorganic materials 0.000 claims 34
- 239000000758 substrate Substances 0.000 claims 25
- 229910052710 silicon Inorganic materials 0.000 claims 24
- 239000010703 silicon Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 20
- 238000000137 annealing Methods 0.000 claims 13
- 238000004140 cleaning Methods 0.000 claims 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82147206P | 2006-08-04 | 2006-08-04 | |
| US11/764,219 US20080032510A1 (en) | 2006-08-04 | 2007-06-17 | Cmos sion gate dielectric performance with double plasma nitridation containing noble gas |
| PCT/US2007/075040 WO2008019282A1 (en) | 2006-08-04 | 2007-08-02 | Improving cmos sion gate dielectric performance with double plasma nitridation containing noble gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009545895A JP2009545895A (ja) | 2009-12-24 |
| JP2009545895A5 true JP2009545895A5 (enExample) | 2010-09-16 |
Family
ID=39029737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009523906A Pending JP2009545895A (ja) | 2006-08-04 | 2007-08-02 | 希ガスを含有するダブルプラズマ窒化物形成によるＣＭＯＳＳｉＯＮゲート誘電性能の改善 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080032510A1 (enExample) |
| JP (1) | JP2009545895A (enExample) |
| KR (1) | KR20090037464A (enExample) |
| TW (1) | TW200818336A (enExample) |
| WO (1) | WO2008019282A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
| US8119210B2 (en) * | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| EP2058844A1 (en) * | 2007-10-30 | 2009-05-13 | Interuniversitair Microelektronica Centrum (IMEC) | Method of forming a semiconductor device |
| US8441078B2 (en) * | 2010-02-23 | 2013-05-14 | Texas Instruments Incorporated | Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations |
| US8450221B2 (en) | 2010-08-04 | 2013-05-28 | Texas Instruments Incorporated | Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls |
| WO2012102756A1 (en) * | 2011-01-25 | 2012-08-02 | Applied Materials, Inc. | Floating gates and methods of formation |
| CN103329259B (zh) * | 2011-01-26 | 2015-05-27 | 应用材料公司 | 氮化硅与氮氧化硅的等离子体处理 |
| US20120270408A1 (en) * | 2011-04-25 | 2012-10-25 | Nanya Technology Corporation | Manufacturing method of gate dielectric layer |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| EP3768874A4 (en) | 2018-03-19 | 2022-03-30 | Applied Materials, Inc. | METHODS FOR DEPOSITING COATINGS ON AEROSPACE ELEMENTS |
| EP3784815A4 (en) | 2018-04-27 | 2021-11-03 | Applied Materials, Inc. | PROTECTION OF COMPONENTS AGAINST CORROSION |
| US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
| EP3959356A4 (en) | 2019-04-26 | 2023-01-18 | Applied Materials, Inc. | METHOD OF PROTECTING AEROSPACE COMPONENTS AGAINST CORROSION AND OXIDATION |
| US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
| US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
| US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
| US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
| WO2022005696A1 (en) | 2020-07-03 | 2022-01-06 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6197701B1 (en) * | 1998-10-23 | 2001-03-06 | Taiwan Semiconductor Manufacturing Company | Lightly nitridation surface for preparing thin-gate oxides |
| US6184132B1 (en) * | 1999-08-03 | 2001-02-06 | International Business Machines Corporation | Integrated cobalt silicide process for semiconductor devices |
| US6610614B2 (en) * | 2001-06-20 | 2003-08-26 | Texas Instruments Incorporated | Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates |
| JP2005235792A (ja) * | 2002-02-27 | 2005-09-02 | Tokyo Electron Ltd | 基板処理方法 |
| US6936528B2 (en) * | 2002-10-17 | 2005-08-30 | Samsung Electronics Co., Ltd. | Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film |
| JP4567503B2 (ja) * | 2004-03-26 | 2010-10-20 | 独立行政法人科学技術振興機構 | 酸化膜の形成方法、半導体装置、半導体装置の製造方法、ＳｉＣ基板の酸化方法とそれを用いたＳｉＣ−ＭＯＳ型半導体装置およびそれを用いたＳｉＣ−ＭＯＳ型集積回路 |
| US8119210B2 (en) * | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| US7115959B2 (en) * | 2004-06-22 | 2006-10-03 | International Business Machines Corporation | Method of forming metal/high-k gate stacks with high mobility |
| US7402472B2 (en) * | 2005-02-25 | 2008-07-22 | Freescale Semiconductor, Inc. | Method of making a nitrided gate dielectric |
| JP2006339370A (ja) * | 2005-06-01 | 2006-12-14 | Toshiba Corp | 半導体装置の製造方法 |
| JP2005328072A (ja) * | 2005-06-15 | 2005-11-24 | Toshiba Corp | 半導体装置およびその製造方法 |
-
2007
- 2007-06-17 US US11/764,219 patent/US20080032510A1/en not_active Abandoned
- 2007-08-02 WO PCT/US2007/075040 patent/WO2008019282A1/en not_active Ceased
- 2007-08-02 KR KR1020097002676A patent/KR20090037464A/ko not_active Ceased
- 2007-08-02 JP JP2009523906A patent/JP2009545895A/ja active Pending
- 2007-08-03 TW TW096128741A patent/TW200818336A/zh unknown
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