JP2009545895A - 希ガスを含有するダブルプラズマ窒化物形成によるＣＭＯＳＳｉＯＮゲート誘電性能の改善 - Google Patents

希ガスを含有するダブルプラズマ窒化物形成によるＣＭＯＳＳｉＯＮゲート誘電性能の改善 Download PDF

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JP2009545895A
JP2009545895A JP2009523906A JP2009523906A JP2009545895A JP 2009545895 A JP2009545895 A JP 2009545895A JP 2009523906 A JP2009523906 A JP 2009523906A JP 2009523906 A JP2009523906 A JP 2009523906A JP 2009545895 A JP2009545895 A JP 2009545895A
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nitrogen
layer
substrate
silicon
annealing
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JP2009545895A5 (enExample
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クリストファー オルセン，
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Applied Materials Inc
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Applied Materials Inc
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    • H10P14/6519—
    • H10P14/20—
    • H10P14/6524—
    • H10P14/6529—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P14/6316—
    • H10P14/6319—
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6682—
    • H10P14/6927—
    • H10P14/69433—

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009523906A 2006-08-04 2007-08-02 希ガスを含有するダブルプラズマ窒化物形成によるＣＭＯＳＳｉＯＮゲート誘電性能の改善 Pending JP2009545895A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US82147206P 2006-08-04 2006-08-04
US11/764,219 US20080032510A1 (en) 2006-08-04 2007-06-17 Cmos sion gate dielectric performance with double plasma nitridation containing noble gas
PCT/US2007/075040 WO2008019282A1 (en) 2006-08-04 2007-08-02 Improving cmos sion gate dielectric performance with double plasma nitridation containing noble gas

Publications (2)

Publication Number Publication Date
JP2009545895A true JP2009545895A (ja) 2009-12-24
JP2009545895A5 JP2009545895A5 (enExample) 2010-09-16

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ID=39029737

Family Applications (1)

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JP2009523906A Pending JP2009545895A (ja) 2006-08-04 2007-08-02 希ガスを含有するダブルプラズマ窒化物形成によるＣＭＯＳＳｉＯＮゲート誘電性能の改善

Country Status (5)

Country Link
US (1) US20080032510A1 (enExample)
JP (1) JP2009545895A (enExample)
KR (1) KR20090037464A (enExample)
TW (1) TW200818336A (enExample)
WO (1) WO2008019282A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
US8441078B2 (en) * 2010-02-23 2013-05-14 Texas Instruments Incorporated Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations
US8450221B2 (en) 2010-08-04 2013-05-28 Texas Instruments Incorporated Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls
WO2012102756A1 (en) * 2011-01-25 2012-08-02 Applied Materials, Inc. Floating gates and methods of formation
US8524589B2 (en) 2011-01-26 2013-09-03 Applied Materials, Inc. Plasma treatment of silicon nitride and silicon oxynitride
US20120270408A1 (en) * 2011-04-25 2012-10-25 Nanya Technology Corporation Manufacturing method of gate dielectric layer
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
WO2019182967A1 (en) 2018-03-19 2019-09-26 Applied Materials, Inc. Methods for depositing coatings on aerospace components
US11015252B2 (en) 2018-04-27 2021-05-25 Applied Materials, Inc. Protection of components from corrosion
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US11732353B2 (en) 2019-04-26 2023-08-22 Applied Materials, Inc. Methods of protecting aerospace components against corrosion and oxidation
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
EP4175772A4 (en) 2020-07-03 2024-08-28 Applied Materials, Inc. PROCEDURES FOR REHABILITATION OF AEROSPACE COMPONENTS

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235792A (ja) * 2002-02-27 2005-09-02 Tokyo Electron Ltd 基板処理方法
JP2005311352A (ja) * 2004-03-26 2005-11-04 Japan Science & Technology Agency 酸化膜の形成方法、半導体装置、半導体装置の製造方法および半導体装置の製造装置、ＳｉＣ基板の酸化方法とそれを用いたＳｉＣ−ＭＯＳ型半導体装置およびそれを用いたＳｉＣ−ＭＯＳ型集積回路、並びにＳｉＣ−ＭＯＳ型半導体装置およびＳｉＣ−ＭＯＳ型集積回路の製造装置
JP2005328072A (ja) * 2005-06-15 2005-11-24 Toshiba Corp 半導体装置およびその製造方法
JP2006339370A (ja) * 2005-06-01 2006-12-14 Toshiba Corp 半導体装置の製造方法

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US6197701B1 (en) * 1998-10-23 2001-03-06 Taiwan Semiconductor Manufacturing Company Lightly nitridation surface for preparing thin-gate oxides
US6184132B1 (en) * 1999-08-03 2001-02-06 International Business Machines Corporation Integrated cobalt silicide process for semiconductor devices
US6610614B2 (en) * 2001-06-20 2003-08-26 Texas Instruments Incorporated Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
US6936528B2 (en) * 2002-10-17 2005-08-30 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7115959B2 (en) * 2004-06-22 2006-10-03 International Business Machines Corporation Method of forming metal/high-k gate stacks with high mobility
US7402472B2 (en) * 2005-02-25 2008-07-22 Freescale Semiconductor, Inc. Method of making a nitrided gate dielectric

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235792A (ja) * 2002-02-27 2005-09-02 Tokyo Electron Ltd 基板処理方法
JP2005311352A (ja) * 2004-03-26 2005-11-04 Japan Science & Technology Agency 酸化膜の形成方法、半導体装置、半導体装置の製造方法および半導体装置の製造装置、ＳｉＣ基板の酸化方法とそれを用いたＳｉＣ−ＭＯＳ型半導体装置およびそれを用いたＳｉＣ−ＭＯＳ型集積回路、並びにＳｉＣ−ＭＯＳ型半導体装置およびＳｉＣ−ＭＯＳ型集積回路の製造装置
JP2006339370A (ja) * 2005-06-01 2006-12-14 Toshiba Corp 半導体装置の製造方法
JP2005328072A (ja) * 2005-06-15 2005-11-24 Toshiba Corp 半導体装置およびその製造方法

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Publication number Publication date
TW200818336A (en) 2008-04-16
WO2008019282A1 (en) 2008-02-14
US20080032510A1 (en) 2008-02-07
KR20090037464A (ko) 2009-04-15

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