TW200818336A - Improving CMOS SiON gate dielectric performance with double plasma nitridation containing noble gas - Google Patents

Improving CMOS SiON gate dielectric performance with double plasma nitridation containing noble gas Download PDF

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Publication number
TW200818336A
TW200818336A TW096128741A TW96128741A TW200818336A TW 200818336 A TW200818336 A TW 200818336A TW 096128741 A TW096128741 A TW 096128741A TW 96128741 A TW96128741 A TW 96128741A TW 200818336 A TW200818336 A TW 200818336A
Authority
TW
Taiwan
Prior art keywords
nitrogen
substrate
layer
niobium
plasma
Prior art date
Application number
TW096128741A
Other languages
English (en)
Chinese (zh)
Inventor
Christopher Olsen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200818336A publication Critical patent/TW200818336A/zh

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Classifications

    • H10P14/6519—
    • H10P14/20—
    • H10P14/6524—
    • H10P14/6529—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P14/6316—
    • H10P14/6319—
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6682—
    • H10P14/6927—
    • H10P14/69433—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW096128741A 2006-08-04 2007-08-03 Improving CMOS SiON gate dielectric performance with double plasma nitridation containing noble gas TW200818336A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82147206P 2006-08-04 2006-08-04
US11/764,219 US20080032510A1 (en) 2006-08-04 2007-06-17 Cmos sion gate dielectric performance with double plasma nitridation containing noble gas

Publications (1)

Publication Number Publication Date
TW200818336A true TW200818336A (en) 2008-04-16

Family

ID=39029737

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096128741A TW200818336A (en) 2006-08-04 2007-08-03 Improving CMOS SiON gate dielectric performance with double plasma nitridation containing noble gas

Country Status (5)

Country Link
US (1) US20080032510A1 (enExample)
JP (1) JP2009545895A (enExample)
KR (1) KR20090037464A (enExample)
TW (1) TW200818336A (enExample)
WO (1) WO2008019282A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
US8441078B2 (en) * 2010-02-23 2013-05-14 Texas Instruments Incorporated Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations
US8450221B2 (en) 2010-08-04 2013-05-28 Texas Instruments Incorporated Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls
WO2012102756A1 (en) * 2011-01-25 2012-08-02 Applied Materials, Inc. Floating gates and methods of formation
US8524589B2 (en) 2011-01-26 2013-09-03 Applied Materials, Inc. Plasma treatment of silicon nitride and silicon oxynitride
US20120270408A1 (en) * 2011-04-25 2012-10-25 Nanya Technology Corporation Manufacturing method of gate dielectric layer
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
WO2019182967A1 (en) 2018-03-19 2019-09-26 Applied Materials, Inc. Methods for depositing coatings on aerospace components
US11015252B2 (en) 2018-04-27 2021-05-25 Applied Materials, Inc. Protection of components from corrosion
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US11732353B2 (en) 2019-04-26 2023-08-22 Applied Materials, Inc. Methods of protecting aerospace components against corrosion and oxidation
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
EP4175772A4 (en) 2020-07-03 2024-08-28 Applied Materials, Inc. PROCEDURES FOR REHABILITATION OF AEROSPACE COMPONENTS

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197701B1 (en) * 1998-10-23 2001-03-06 Taiwan Semiconductor Manufacturing Company Lightly nitridation surface for preparing thin-gate oxides
US6184132B1 (en) * 1999-08-03 2001-02-06 International Business Machines Corporation Integrated cobalt silicide process for semiconductor devices
US6610614B2 (en) * 2001-06-20 2003-08-26 Texas Instruments Incorporated Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
JP2005235792A (ja) * 2002-02-27 2005-09-02 Tokyo Electron Ltd 基板処理方法
US6936528B2 (en) * 2002-10-17 2005-08-30 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
JP4567503B2 (ja) * 2004-03-26 2010-10-20 独立行政法人科学技術振興機構 酸化膜の形成方法、半導体装置、半導体装置の製造方法、ＳｉＣ基板の酸化方法とそれを用いたＳｉＣ−ＭＯＳ型半導体装置およびそれを用いたＳｉＣ−ＭＯＳ型集積回路
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7115959B2 (en) * 2004-06-22 2006-10-03 International Business Machines Corporation Method of forming metal/high-k gate stacks with high mobility
US7402472B2 (en) * 2005-02-25 2008-07-22 Freescale Semiconductor, Inc. Method of making a nitrided gate dielectric
JP2006339370A (ja) * 2005-06-01 2006-12-14 Toshiba Corp 半導体装置の製造方法
JP2005328072A (ja) * 2005-06-15 2005-11-24 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2009545895A (ja) 2009-12-24
WO2008019282A1 (en) 2008-02-14
US20080032510A1 (en) 2008-02-07
KR20090037464A (ko) 2009-04-15

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