KR20090037464A - 귀 가스를 포함하는 이중 플라즈마 질화에 의해 ＣＭＯＳ ＳｉＯＮ 게이트 유전체 성능의 개선 - Google Patents

귀 가스를 포함하는 이중 플라즈마 질화에 의해 ＣＭＯＳ ＳｉＯＮ 게이트 유전체 성능의 개선 Download PDF

Info

Publication number
KR20090037464A
KR20090037464A KR1020097002676A KR20097002676A KR20090037464A KR 20090037464 A KR20090037464 A KR 20090037464A KR 1020097002676 A KR1020097002676 A KR 1020097002676A KR 20097002676 A KR20097002676 A KR 20097002676A KR 20090037464 A KR20090037464 A KR 20090037464A
Authority
KR
South Korea
Prior art keywords
nitrogen
layer
substrate
silicon
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020097002676A
Other languages
English (en)
Korean (ko)
Inventor
크리스토퍼 올젠
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090037464A publication Critical patent/KR20090037464A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020097002676A 2006-08-04 2007-08-02 귀 가스를 포함하는 이중 플라즈마 질화에 의해 ＣＭＯＳ ＳｉＯＮ 게이트 유전체 성능의 개선 Ceased KR20090037464A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US82147206P 2006-08-04 2006-08-04
US60/821,472 2006-08-04
US11/764,219 US20080032510A1 (en) 2006-08-04 2007-06-17 Cmos sion gate dielectric performance with double plasma nitridation containing noble gas
US11/764,219 2007-06-17

Publications (1)

Publication Number Publication Date
KR20090037464A true KR20090037464A (ko) 2009-04-15

Family

ID=39029737

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097002676A Ceased KR20090037464A (ko) 2006-08-04 2007-08-02 귀 가스를 포함하는 이중 플라즈마 질화에 의해 ＣＭＯＳ ＳｉＯＮ 게이트 유전체 성능의 개선

Country Status (5)

Country Link
US (1) US20080032510A1 (enExample)
JP (1) JP2009545895A (enExample)
KR (1) KR20090037464A (enExample)
TW (1) TW200818336A (enExample)
WO (1) WO2008019282A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
US8441078B2 (en) 2010-02-23 2013-05-14 Texas Instruments Incorporated Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations
US8450221B2 (en) 2010-08-04 2013-05-28 Texas Instruments Incorporated Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls
US9054038B2 (en) * 2011-01-25 2015-06-09 Applied Materials, Inc. Floating gates and methods of formation
US8524589B2 (en) 2011-01-26 2013-09-03 Applied Materials, Inc. Plasma treatment of silicon nitride and silicon oxynitride
US20120270408A1 (en) * 2011-04-25 2012-10-25 Nanya Technology Corporation Manufacturing method of gate dielectric layer
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
WO2019182967A1 (en) 2018-03-19 2019-09-26 Applied Materials, Inc. Methods for depositing coatings on aerospace components
WO2019209401A1 (en) 2018-04-27 2019-10-31 Applied Materials, Inc. Protection of components from corrosion
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
EP3959356A4 (en) 2019-04-26 2023-01-18 Applied Materials, Inc. METHOD OF PROTECTING AEROSPACE COMPONENTS AGAINST CORROSION AND OXIDATION
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
CN115734826A (zh) 2020-07-03 2023-03-03 应用材料公司 用于翻新航空部件的方法
US20250210585A1 (en) * 2023-12-22 2025-06-26 Adeia Semiconductor Bonding Technologies Inc. Direct bonding of semiconductor elements

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197701B1 (en) * 1998-10-23 2001-03-06 Taiwan Semiconductor Manufacturing Company Lightly nitridation surface for preparing thin-gate oxides
US6184132B1 (en) * 1999-08-03 2001-02-06 International Business Machines Corporation Integrated cobalt silicide process for semiconductor devices
US6610614B2 (en) * 2001-06-20 2003-08-26 Texas Instruments Incorporated Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
JP2005235792A (ja) * 2002-02-27 2005-09-02 Tokyo Electron Ltd 基板処理方法
US6936528B2 (en) * 2002-10-17 2005-08-30 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
JP4567503B2 (ja) * 2004-03-26 2010-10-20 独立行政法人科学技術振興機構 酸化膜の形成方法、半導体装置、半導体装置の製造方法、ＳｉＣ基板の酸化方法とそれを用いたＳｉＣ−ＭＯＳ型半導体装置およびそれを用いたＳｉＣ−ＭＯＳ型集積回路
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7115959B2 (en) * 2004-06-22 2006-10-03 International Business Machines Corporation Method of forming metal/high-k gate stacks with high mobility
US7402472B2 (en) * 2005-02-25 2008-07-22 Freescale Semiconductor, Inc. Method of making a nitrided gate dielectric
JP2006339370A (ja) * 2005-06-01 2006-12-14 Toshiba Corp 半導体装置の製造方法
JP2005328072A (ja) * 2005-06-15 2005-11-24 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2008019282A1 (en) 2008-02-14
TW200818336A (en) 2008-04-16
JP2009545895A (ja) 2009-12-24
US20080032510A1 (en) 2008-02-07

Similar Documents

Publication Publication Date Title
KR20090037464A (ko) 귀 가스를 포함하는 이중 플라즈마 질화에 의해 ＣＭＯＳ ＳｉＯＮ 게이트 유전체 성능의 개선
US7964514B2 (en) Multiple nitrogen plasma treatments for thin SiON dielectrics
US20040175961A1 (en) Two-step post nitridation annealing for lower EOT plasma nitrided gate dielectrics
CN103069552B (zh) 包括具有在其侧壁上增强的氮浓度的SiON栅电介质的MOS晶体管
US7923360B2 (en) Method of forming dielectric films
CN1312737C (zh) 制作栅极介电层的方法
CN1967780B (zh) 用于制作场效应晶体管的栅极电介质的方法
US20080296704A1 (en) Semiconductor device and manufacturing method thereof
KR101078498B1 (ko) 절연체 박막의 제조 방법
CN1619781A (zh) 处理方法及装置
CN101620995A (zh) 栅极介质层及其制造方法、半导体器件及其制造方法
JP3593340B2 (ja) 集積回路デバイスの製造方法
CN100380609C (zh) 半导体基片的uv增强的氧氮化
CN100487877C (zh) 半导体器件的制造方法
JP2004207560A (ja) 半導体装置およびその製造方法
CN101120437B (zh) 电介质膜及其形成方法
CN101490808A (zh) 以含贵重气体的双等离子体氮化法增进cmos氮氧化硅栅介电层效能的方法
JP4999265B2 (ja) ゲート絶縁膜の製造方法
JP2012043919A (ja) 半導体装置の製造方法および半導体装置
JP5121142B2 (ja) 半導体装置の製造方法
JP5119904B2 (ja) 半導体装置の製造方法
WO2007124197A2 (en) Method for forming silicon oxynitride materials

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000