CN100487877C - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN100487877C CN100487877C CNB2004800009227A CN200480000922A CN100487877C CN 100487877 C CN100487877 C CN 100487877C CN B2004800009227 A CNB2004800009227 A CN B2004800009227A CN 200480000922 A CN200480000922 A CN 200480000922A CN 100487877 C CN100487877 C CN 100487877C
- Authority
- CN
- China
- Prior art keywords
- nitrogen
- annealing
- mentioned
- environment
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 114
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 371
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 187
- 238000000137 annealing Methods 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
- 238000009413 insulation Methods 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims description 86
- 230000008676 import Effects 0.000 claims description 45
- 230000003647 oxidation Effects 0.000 claims description 38
- 238000007254 oxidation reaction Methods 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052796 boron Inorganic materials 0.000 abstract description 18
- 238000009826 distribution Methods 0.000 abstract description 5
- 239000000523 sample Substances 0.000 description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 229910052814 silicon oxide Inorganic materials 0.000 description 29
- 150000002500 ions Chemical class 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 230000001590 oxidative effect Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 10
- 238000005121 nitriding Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000006837 decompression Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 2
- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002829 nitrogen Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- -1 hydrogen free radical Chemical class 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/005561 WO2004097922A1 (ja) | 2003-04-30 | 2003-04-30 | 半導体装置の製造方法 |
JPPCT/JP03/05561 | 2003-04-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1701426A CN1701426A (zh) | 2005-11-23 |
CN100487877C true CN100487877C (zh) | 2009-05-13 |
Family
ID=33398149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800009227A Expired - Fee Related CN100487877C (zh) | 2003-04-30 | 2004-04-28 | 半导体器件的制造方法 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100627219B1 (zh) |
CN (1) | CN100487877C (zh) |
WO (2) | WO2004097922A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4264039B2 (ja) * | 2004-08-25 | 2009-05-13 | パナソニック株式会社 | 半導体装置 |
JP4554378B2 (ja) * | 2005-01-21 | 2010-09-29 | 富士通セミコンダクター株式会社 | 窒化膜の形成方法、半導体装置の製造方法及びキャパシタの製造方法 |
DE102005020058B4 (de) * | 2005-04-29 | 2011-07-07 | Globalfoundries Inc. | Herstellungsverfahren für ein Halbleiterbauelement mit Gatedielektrika mit unterschiedlichen Blockiereigenschaften |
JP5119904B2 (ja) * | 2007-12-20 | 2013-01-16 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
CN102456732B (zh) * | 2010-10-19 | 2014-10-08 | 格科微电子(上海)有限公司 | Mos晶体管及其制造方法、cmos图像传感器 |
CN110233095B (zh) * | 2018-03-05 | 2021-11-23 | 中芯国际集成电路制造(上海)有限公司 | 栅介质层、场效应管的制造方法及场效应管器件 |
TW202129061A (zh) * | 2019-10-02 | 2021-08-01 | 美商應用材料股份有限公司 | 環繞式閘極輸入/輸出工程 |
CN116031141A (zh) * | 2022-12-25 | 2023-04-28 | 北京屹唐半导体科技股份有限公司 | 工件处理方法、工件处理设备及半导体器件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3326717B2 (ja) * | 1999-02-08 | 2002-09-24 | 富士通株式会社 | 半導体装置の製造方法 |
JP2001093903A (ja) * | 1999-09-24 | 2001-04-06 | Toshiba Corp | 半導体装置及びその製造方法 |
US6933248B2 (en) * | 2000-10-19 | 2005-08-23 | Texas Instruments Incorporated | Method for transistor gate dielectric layer with uniform nitrogen concentration |
JP2002151684A (ja) * | 2000-11-09 | 2002-05-24 | Nec Corp | 半導体装置及びその製造方法 |
JP2002222941A (ja) * | 2001-01-24 | 2002-08-09 | Sony Corp | Mis型半導体装置及びその製造方法 |
JP2003133550A (ja) * | 2001-07-18 | 2003-05-09 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2004023008A (ja) * | 2002-06-20 | 2004-01-22 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
-
2003
- 2003-04-30 WO PCT/JP2003/005561 patent/WO2004097922A1/ja not_active Application Discontinuation
-
2004
- 2004-04-28 KR KR1020057005974A patent/KR100627219B1/ko active IP Right Grant
- 2004-04-28 CN CNB2004800009227A patent/CN100487877C/zh not_active Expired - Fee Related
- 2004-04-28 WO PCT/JP2004/006213 patent/WO2004097925A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2004097922A1 (ja) | 2004-11-11 |
CN1701426A (zh) | 2005-11-23 |
KR100627219B1 (ko) | 2006-09-25 |
WO2004097925A1 (ja) | 2004-11-11 |
KR20060004649A (ko) | 2006-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6610615B1 (en) | Plasma nitridation for reduced leakage gate dielectric layers | |
US5712208A (en) | Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants | |
JP3976282B2 (ja) | 信頼できる極薄酸窒化物形成のための新規なプロセス | |
CN1757098B (zh) | 利用具有氨的超低压快速热退火调节氧氮化硅的氮分布曲线 | |
US6197701B1 (en) | Lightly nitridation surface for preparing thin-gate oxides | |
JP4340830B2 (ja) | 半導体装置のゲート絶縁膜形成方法 | |
CN101752244B (zh) | 等离子体处理方法 | |
US8148275B2 (en) | Method for forming dielectric films | |
CN100367513C (zh) | 在硅衬底上层叠栅极绝缘膜和栅极电极的半导体器件及其制造方法 | |
US6228779B1 (en) | Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology | |
US6362085B1 (en) | Method for reducing gate oxide effective thickness and leakage current | |
US20040175961A1 (en) | Two-step post nitridation annealing for lower EOT plasma nitrided gate dielectrics | |
EP0742593A2 (en) | Semiconductor device with multilevel structured insulator and fabrication method thereof | |
US7923360B2 (en) | Method of forming dielectric films | |
JP2000208510A (ja) | 酸窒化物ゲ―ト誘電体およびその形成方法 | |
JP2003059926A (ja) | 半導体装置 | |
US7514376B2 (en) | Manufacture of semiconductor device having nitridized insulating film | |
CN100487877C (zh) | 半导体器件的制造方法 | |
US6767847B1 (en) | Method of forming a silicon nitride-silicon dioxide gate stack | |
JP3399413B2 (ja) | 酸窒化膜およびその形成方法 | |
CN103887161A (zh) | 一种抑制掺杂原子在栅介质中扩散的方法 | |
JP2004253777A (ja) | 半導体装置及び半導体装置の製造方法 | |
US6764962B2 (en) | Method for forming an oxynitride layer | |
Lucovsky et al. | Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality Si SiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies | |
CN1762045A (zh) | 用于较低eot等离子体氮化的栅电介质的两步后氮化退火 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090513 Termination date: 20200428 |