JPS56142629A - Vacuum device - Google Patents

Vacuum device

Info

Publication number
JPS56142629A
JPS56142629A JP4669080A JP4669080A JPS56142629A JP S56142629 A JPS56142629 A JP S56142629A JP 4669080 A JP4669080 A JP 4669080A JP 4669080 A JP4669080 A JP 4669080A JP S56142629 A JPS56142629 A JP S56142629A
Authority
JP
Japan
Prior art keywords
vacuum
semiconductor wafers
vacuum chambers
slit
stages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4669080A
Other languages
Japanese (ja)
Inventor
Sueo Tsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4669080A priority Critical patent/JPS56142629A/en
Publication of JPS56142629A publication Critical patent/JPS56142629A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Abstract

PURPOSE:To enable continuous treatment in high vacuum by forming a slit, through which semiconductor wafers can pass, to a block connecting several vacuum chambers, the degree of vacuum thereof is increased by stages. CONSTITUTION:A slit 3A in an extent that semiconductor wafers 1 can pass is made up to a block 3 conneting several vacuum chambers, which have exhaust pipes and the degree of vacuum thereof is increased by stages, and the semiconductor wafers 1 are successively transported to the next vacuum chambers by means of O ring belts 2 (4 are O ring belt holes). Thus, the wafers 1 can continuously be sent into high vacuum chambers from atmospheric pressure without using vacuum valves.
JP4669080A 1980-04-09 1980-04-09 Vacuum device Pending JPS56142629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4669080A JPS56142629A (en) 1980-04-09 1980-04-09 Vacuum device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4669080A JPS56142629A (en) 1980-04-09 1980-04-09 Vacuum device

Publications (1)

Publication Number Publication Date
JPS56142629A true JPS56142629A (en) 1981-11-07

Family

ID=12754368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4669080A Pending JPS56142629A (en) 1980-04-09 1980-04-09 Vacuum device

Country Status (1)

Country Link
JP (1) JPS56142629A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893230A (en) * 1981-11-30 1983-06-02 Toshiba Corp Ultra high vacuum processing apparatus
US7017637B2 (en) 2001-09-25 2006-03-28 Dainippon Screen Mfg. Co. Ltd. Thin film forming apparatus and thin film forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893230A (en) * 1981-11-30 1983-06-02 Toshiba Corp Ultra high vacuum processing apparatus
US7017637B2 (en) 2001-09-25 2006-03-28 Dainippon Screen Mfg. Co. Ltd. Thin film forming apparatus and thin film forming method

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