JPS5621329A - Plasma treatment - Google Patents

Plasma treatment

Info

Publication number
JPS5621329A
JPS5621329A JP9670079A JP9670079A JPS5621329A JP S5621329 A JPS5621329 A JP S5621329A JP 9670079 A JP9670079 A JP 9670079A JP 9670079 A JP9670079 A JP 9670079A JP S5621329 A JPS5621329 A JP S5621329A
Authority
JP
Japan
Prior art keywords
faces
unworked
wafers
flow
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9670079A
Other languages
Japanese (ja)
Inventor
Junichi Okano
Katsuhisa Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9670079A priority Critical patent/JPS5621329A/en
Publication of JPS5621329A publication Critical patent/JPS5621329A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance the treatment efficiency and eliminate the etching nonuniformity, by placing the main worked face of a wafer perpendicularly to the flow of the plasma gas and shielding the unworked face of the wafer. CONSTITUTION:Si wafers are arranged on a flat plte 21 so that worked faces 10a, 10a' of the wafers are exposed and extend perpendicularly to the flow of the plasma gas and the unworked faces of the wafers are in tight contact with the table of the flat plate 21. Since the unworked faces of the wafers are shielded from the plasma gas flow and this flow perpendicularly collides against the worked faces, the treatment efficiency is greatly increased and the etching nonuniformity is eliminated. A means for preventing the etching of the unworked faces is not needed. No damage etching is caused.
JP9670079A 1979-07-31 1979-07-31 Plasma treatment Pending JPS5621329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9670079A JPS5621329A (en) 1979-07-31 1979-07-31 Plasma treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9670079A JPS5621329A (en) 1979-07-31 1979-07-31 Plasma treatment

Publications (1)

Publication Number Publication Date
JPS5621329A true JPS5621329A (en) 1981-02-27

Family

ID=14172031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9670079A Pending JPS5621329A (en) 1979-07-31 1979-07-31 Plasma treatment

Country Status (1)

Country Link
JP (1) JPS5621329A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59153819A (en) * 1983-02-17 1984-09-01 Nippon Steel Corp Method for burning carbonaceous solid in melting and refining furnace
JPS62167736A (en) * 1986-01-20 1987-07-24 Osaka Sekiyu Kagaku Kk Production of naphthalene
JPS63219516A (en) * 1987-03-07 1988-09-13 Sumitomo Metal Ind Ltd Method for melting scrap

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59153819A (en) * 1983-02-17 1984-09-01 Nippon Steel Corp Method for burning carbonaceous solid in melting and refining furnace
JPS6256945B2 (en) * 1983-02-17 1987-11-27 Nippon Steel Corp
JPS62167736A (en) * 1986-01-20 1987-07-24 Osaka Sekiyu Kagaku Kk Production of naphthalene
JPS63219516A (en) * 1987-03-07 1988-09-13 Sumitomo Metal Ind Ltd Method for melting scrap

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