JPS5617009A - Apparatus for manufacturing semiconductor device - Google Patents

Apparatus for manufacturing semiconductor device

Info

Publication number
JPS5617009A
JPS5617009A JP9294179A JP9294179A JPS5617009A JP S5617009 A JPS5617009 A JP S5617009A JP 9294179 A JP9294179 A JP 9294179A JP 9294179 A JP9294179 A JP 9294179A JP S5617009 A JPS5617009 A JP S5617009A
Authority
JP
Japan
Prior art keywords
gate
chamber
article
opened
exhaust gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9294179A
Other languages
Japanese (ja)
Inventor
Yukihisa Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP9294179A priority Critical patent/JPS5617009A/en
Publication of JPS5617009A publication Critical patent/JPS5617009A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

PURPOSE:To contrive the safety of working for an apparatus for manufacturing a semiconductor device by providing a sealed preparatory exhaust gas chamber, a feeding portion and a discharging portion through in-line gate valves at both ends of a processing chamber completely sealed except connectors of both ends of intake and exhaust gas holes thereof. CONSTITUTION:When this apparatus is used, respective chambers are intaken at a and exhausted at b. An article 1 to be processed in a feeding portion 2 is detected, a gate 7 is then opened, and the aritcle 1 is fed to a preparatory exhaust gas chamber 3. After closing the gate 7, the chamber 3 is evacuated. A gate 8 is then opened, and the article 1 is fed to a processing chamber 4. When the gate 8 is closed, separating and cleaning works are executed. When a gate 9 is opened, the article 1 is fed to a preparatory exhaust gas chamber 5. After the gate 9 is closed to evacuate the chamber 5, a gate 10 is opened to feed the article 1 to a discharging portion 6, and the gate 10 is then closed. This configuration can isolate workers from the detrimental exfoliation liquid and its vapor completely to safely execute the exfoliation work.
JP9294179A 1979-07-20 1979-07-20 Apparatus for manufacturing semiconductor device Pending JPS5617009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9294179A JPS5617009A (en) 1979-07-20 1979-07-20 Apparatus for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9294179A JPS5617009A (en) 1979-07-20 1979-07-20 Apparatus for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5617009A true JPS5617009A (en) 1981-02-18

Family

ID=14068494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9294179A Pending JPS5617009A (en) 1979-07-20 1979-07-20 Apparatus for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617009A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0533145A (en) * 1991-02-18 1993-02-09 Semiconductor Energy Lab Co Ltd Substrate treating device
JP2007333300A (en) * 2006-06-15 2007-12-27 Ricoh Co Ltd Micro-part manufacturing device and manufacturing method, and liquid spray head manufactured thereby

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0533145A (en) * 1991-02-18 1993-02-09 Semiconductor Energy Lab Co Ltd Substrate treating device
JP2007333300A (en) * 2006-06-15 2007-12-27 Ricoh Co Ltd Micro-part manufacturing device and manufacturing method, and liquid spray head manufactured thereby

Similar Documents

Publication Publication Date Title
KR100269410B1 (en) Method of surface treating and apparatus thereof
KR950034488A (en) Semiconductor Manufacturing Device and Manufacturing Method and Semiconductor Device
JPS5617009A (en) Apparatus for manufacturing semiconductor device
JPS5877239A (en) Continuous vacuum processor
JPS5588335A (en) Automatic conveying mechanism for plasma etching/ stripping device
JPS55138237A (en) Manufacture of semiconductor device
JPS6431971A (en) Vacuum treatment device
JPS5298475A (en) Plasma treating apparatus
JPS5687331A (en) Reducing furnace for solder-treatment
JPS561527A (en) Exhaust gas disposal method for semiconductor manufacturing equipment
GB1077246A (en) Method and apparatus for sterilizing
JPS6423538A (en) Method and equipment for manufacturing semiconductor device
JPS5721825A (en) Increasing method for gettering effect due to internal defect in semiconductor substrate
JPH03130317A (en) Method for keeping cleanness in each chamber constituting multi-chambers type vacuum heat treatment furnace
JPS56169333A (en) Semiconductor device
JPS55109437A (en) Gas separating cascade
JPS5516475A (en) Plasma processing unit
JPH0485813A (en) Vacuum treatment equipment
JPS5443461A (en) Packing method of semiconductor wafer
JPS56142629A (en) Vacuum device
JPS52139373A (en) Treating method for compound semiconductor
JPS61227184A (en) Plasma etching device
JPH0212914A (en) Etching device
JPS5785925A (en) Device for producing atmosphere
JPS5594A (en) Fumigation of grain in silo