JPS6428920A - Ashing device - Google Patents
Ashing deviceInfo
- Publication number
- JPS6428920A JPS6428920A JP18476887A JP18476887A JPS6428920A JP S6428920 A JPS6428920 A JP S6428920A JP 18476887 A JP18476887 A JP 18476887A JP 18476887 A JP18476887 A JP 18476887A JP S6428920 A JPS6428920 A JP S6428920A
- Authority
- JP
- Japan
- Prior art keywords
- ashing
- treatment
- wafer
- holes
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain an ashing device which can comply with a single-wafer treatment of a large-diameter semiconductor wafer or the like without damaging the wafer by a method wherein a diffusion plate which has two or more holes is installed at an exhaust port of an ashing gas at a nozzle and sidewalls of the holes are crossed obliquely with a face of a substrate to be treated so that the uniformity and a treatment speed of an ashing treatment can be enhanced. CONSTITUTION:The center of a semiconductor wafer 19 is aligned with the center of a mounting stage 18; the wafer is mounted on the stage; while an ashing gas is diffused, it is discharged from holes 24 of a diffusion plate 23 installed inside a nozzle 13 near a discharge part 15 which are tapered in such a way that they are crossed obliquely with a face of the water 19. A stream and a wind pressure of the gas which are suitable for an ashing treatment are realized; an irregularity in the ashing treatment is prevented; a treatment speed and the uniformity of the ashing treatment are enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18476887A JPS6428920A (en) | 1987-07-24 | 1987-07-24 | Ashing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18476887A JPS6428920A (en) | 1987-07-24 | 1987-07-24 | Ashing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428920A true JPS6428920A (en) | 1989-01-31 |
Family
ID=16158984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18476887A Pending JPS6428920A (en) | 1987-07-24 | 1987-07-24 | Ashing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428920A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009081457A (en) * | 2008-11-25 | 2009-04-16 | Hitachi Kokusai Electric Inc | Substrate treating apparatus and manufacturing method of semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5220766A (en) * | 1975-08-04 | 1977-02-16 | Texas Instruments Inc | Method of removing phtoresist layer and processing apparatus thereof |
| JPS54128284A (en) * | 1978-03-29 | 1979-10-04 | Kokusai Electric Co Ltd | Electrode structure for semiconductor wafer plasma etching stripping device |
| JPS6298728A (en) * | 1985-10-25 | 1987-05-08 | Matsushita Electric Ind Co Ltd | Dryetching device |
-
1987
- 1987-07-24 JP JP18476887A patent/JPS6428920A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5220766A (en) * | 1975-08-04 | 1977-02-16 | Texas Instruments Inc | Method of removing phtoresist layer and processing apparatus thereof |
| JPS54128284A (en) * | 1978-03-29 | 1979-10-04 | Kokusai Electric Co Ltd | Electrode structure for semiconductor wafer plasma etching stripping device |
| JPS6298728A (en) * | 1985-10-25 | 1987-05-08 | Matsushita Electric Ind Co Ltd | Dryetching device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009081457A (en) * | 2008-11-25 | 2009-04-16 | Hitachi Kokusai Electric Inc | Substrate treating apparatus and manufacturing method of semiconductor device |
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