WO2006088560A1 - Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid - Google Patents

Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid Download PDF

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Publication number
WO2006088560A1
WO2006088560A1 PCT/US2005/047343 US2005047343W WO2006088560A1 WO 2006088560 A1 WO2006088560 A1 WO 2006088560A1 US 2005047343 W US2005047343 W US 2005047343W WO 2006088560 A1 WO2006088560 A1 WO 2006088560A1
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WIPO (PCT)
Prior art keywords
fluid
substrate
carbon dioxide
supercritical
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/047343
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English (en)
French (fr)
Inventor
Brandon Hansen
Marie Lowe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron America Inc
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Tokyo Electron Ltd
Tokyo Electron America Inc
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Priority to JP2007555091A priority Critical patent/JP2008530795A/ja
Publication of WO2006088560A1 publication Critical patent/WO2006088560A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a method and system for treating a substrate in a high pressure processing system and, more particularly, to a method and system for treating a substrate using a high pressure fluid and a process chemistry comprising fluorosilicic acid in a high pressure processing system.
  • a sequence of material processing steps including both pattern etching and deposition processes, are performed, whereby material is removed from or added to a substrate surface, respectively.
  • pattern etching a pattern formed in a mask layer of radiation- sensitive material, such as photoresist, using for example photolithography, is transferred to an underlying thin material film using a combination of physical and chemical processes to facilitate the selective removal of the underlying material film relative to the mask layer.
  • the remaining radiation-sensitive material, or photoresist, and post-etch residue such as hardened photoresist and other etch residues, are removed using one or more cleaning processes.
  • these residues are removed by performing plasma ashing in an oxygen plasma, followed by wet cleaning through immersion of the substrate in a liquid bath of stripper chemicals.
  • the present invention provides a method and system for treating a substrate with a high pressure fluid and a process chemistry in a high pressure processing system.
  • a method and system for treating a substrate with a high pressure fluid and a process chemistry comprising fluorosilicic acid in a high pressure processing system.
  • the method includes placing the substrate in a high pressure processing chamber onto a platen configured to support the substrate; forming a supercritical fluid from a fluid by adjusting a pressure of the fluid above the critical pressure of the fluid, and adjusting a temperature of the fluid above the critical temperature of the fluid; introducing the supercritical fluid to the high pressure processing chamber; introducing a process chemistry comprising fluorosilicic acid to the supercritical fluid; and exposing the substrate to the supercritical fluid and process chemistry.
  • the high pressure processing system includes a processing chamber configured to treat the substrate; a platen coupled to the processing chamber, and configured to support the substrate; a high pressure fluid supply system configured to introduce a supercritical fluid to the processing chamber; a fluid flow system coupled to the processing chamber, and configured to flow the supercritical fluid over the substrate in the processing chamber; a process chemistry supply system having a source of fluorosilicic acid and an injection system configured to introduce a process chemistry comprising fluorosilicic acid to the processing chamber; and a temperature control system coupled to one or more of the processing chamber, the platen, the high pressure fluid supply system, the fluid flow system, and the process chemistry supply system, and configured to elevate the supercritical fluid to a temperature approximately equal to 4O 0 C, or greater.
  • FIG. 1 presents a simplified schematic representation of a processing system
  • FIG. 2A depicts a system configured to cool a pump
  • FIG. 2B depicts another system configured to cool a pump
  • FIG. 3 presents another simplified schematic representation of a processing system
  • FIG. 4 presents another simplified schematic representation of a processing system
  • FIGS. 5A and 5B depict a fluid injection manifold for introducing fluid to a processing system
  • FIG. 6 illustrates a method of treating a substrate in a processing system according to an embodiment of the invention.
  • FIG. 1 illustrates a processing system 100 according to an embodiment of the invention.
  • processing system 100 is configured to treat a substrate 105 with a high pressure fluid, such as a fluid in a supercritical state, and a process chemistry comprising fluorosilicic acid.
  • the processing system 100 comprises processing elements that include a processing chamber 110, a fluid flow system 120, a process chemistry supply system 130, a high pressure fluid supply system 140, and a controller 150, all of which are configured to process substrate 105.
  • the controller 150 can be coupled to the processing chamber 110, the fluid flow system 120, the process chemistry supply system 130, and the high pressure fluid supply system 140.
  • controller 150 can be coupled to a one or more additional controllers/computers (not shown), and controller 150 can obtain setup and/or configuration information from an additional controller/computer.
  • FIG 1 singular processing elements (110, 120, 130, 140, and 150) are shown, but this is not required for the invention.
  • the processing system 100 can comprise any number of processing elements having any number of controllers associated with them in addition to independent processing elements.
  • the controller 150 can be used to configure any number of processing elements (110, 120, 130, and 140), and the controller 150 can collect, provide, process, store, and display data from processing elements.
  • the controller 150 can comprise a number of applications for controlling one or more of the processing elements.
  • controller 150 can include a graphic user interface (GUI) component (not shown) that can provide easy to use interfaces that enable a user to monitor and/or control one or more processing elements.
  • GUI graphic user interface
  • the fluid flow system 120 is configured to flow fluid and chemistry from the supplies 130 and 140 through the processing chamber 110.
  • the fluid flow system 120 is illustrated as a recirculation system through which the fluid and chemistry recirculate from and back to the processing chamber 110 via primary flow line 620. This recirculation is most likely to be the preferred configuration for many applications, but this is not necessary to the invention. Fluids, particularly inexpensive fluids, can be passed through the processing chamber 110 once and then discarded, which might be more efficient than reconditioning them for re-entry into the processing chamber.
  • This fluid flow system 120 can include one or more valves (not shown) for regulating the flow of a processing solution through the fluid flow system 120 and through the processing chamber 110.
  • the fluid flow system 120 can comprise any number of back-flow valves, filters, pumps, and/or heaters (not shown) for maintaining a specified temperature, pressure or both for the processing solution and for flowing the process solution through the fluid flow system 120 and through the processing chamber 110.
  • any one of the many components provided within the fluid flow system 120 may be heated to a temperature consistent with the specified process temperature.
  • Fluid flow system 120 for circulating the supercritical fluid through processing chamber 110 can comprise a primary flow line 620 coupled to high pressure processing chamber 110, and configured to supply the supercritical fluid at a fluid temperature above the critical temperature of the fluid, for example equal to or greater than 40°C, to the high pressure processing chamber 110, and a high temperature pump 600, shown and described below with reference to FIGS. 2A and 2B, coupled to the primary flow line 620.
  • the high temperature pump 600 can be configured to move the supercritical fluid through the primary flow line 620 to the processing chamber 110, wherein the high temperature pump comprises a coolant inlet configured to receive a coolant and a coolant outlet configured to discharge the coolant.
  • a heat exchanger coupled to the coolant inlet can be configured to lower a coolant temperature of the coolant to a temperature less than or equal to the fluid temperature of the supercritical fluid.
  • a pump impeller 610 housed within pump 600 can move high pressure fluid from a suction side 622 of primary flow line 620 through an inlet 612 and through an outlet 614 to a pressure side 624 of the primary flow line 620.
  • a fraction of high pressure fluid can be diverted through an inlet valve 628, through heat exchanger 630, and enter pump 600 through coolant inlet 632. Thereafter, the fraction of high pressure fluid utilized for cooling can exit from pump 600 at coolant outlet 634 and return to the primary flow line 620 through outlet valve 626.
  • a high pressure fluid such as a supercritical fluid
  • a fluid source (not shown) is directed through heat exchanger 630 (to lower the temperature of the fluid), and then enters pump 600 through coolant inlet 632, passes through pump 600, exits through coolant outlet 634, and continues to a discharge system (not shown).
  • the fluid source can include a supercritical fluid source, such as a supercritical carbon dioxide source.
  • the fluid source may or may not be a member of the high pressure fluid supply system 140 (or 240) described in FIG. 1 (or FIG. 3).
  • the discharge system can include a vent, or the discharge system can include a recirculation system having a pump configured to recirculate the high pressure fluid through the heat exchanger 630 and pump 600.
  • the processing system 100 can comprise high pressure fluid supply system 140.
  • the high pressure fluid supply system 140 can be coupled to the fluid flow system 120, but this is not required.
  • high pressure fluid supply system 140 can be configured differently and coupled differently.
  • the fluid supply system 140 can be coupled directly to the processing chamber 110.
  • the high pressure fluid supply system 140 can include a supercritical fluid supply system.
  • a supercritical fluid as referred to herein is a fluid that is in a supercritical state, which is that state that exists when the fluid is maintained at or above the critical pressure and at or above the critical temperature on its phase diagram. In such a supercritical state, the fluid possesses certain properties, one of which is the substantial absence of surface tension. Accordingly, a supercritical fluid supply system, as referred to herein, is one that delivers to a processing chamber a fluid that assumes a supercritical state at the pressure and temperature at which the processing chamber is being controlled. Furthermore, it is only necessary that at least at or near the critical point the fluid is in substantially a supercritical state at which its properties are sufficient, and exist long enough, to realize their advantages in the process being performed.
  • Carbon dioxide for example, is a supercritical fluid when maintained at or above a pressure of about 1070 psi at a temperature of 31 0 C. This state of the fluid in the processing chamber may be maintained by operating the processing chamber at 2000 to 10000 psi at a temperature, for example, of approximately 40 0 C or greater.
  • the fluid supply system 140 can include a supercritical fluid supply system, which can be a carbon dioxide supply system.
  • the fluid supply system 140 can be configured to introduce a high pressure fluid having a pressure substantially near the critical pressure for the fluid.
  • the fluid supply system 140 can be configured to introduce a supercritical fluid, such as carbon dioxide in a supercritical state.
  • the fluid supply system 140 can be configured to introduce a supercritical fluid, such as supercritical carbon dioxide, at a pressure ranging from approximately the critical pressure of carbon dioxide to 10,000 psi.
  • a supercritical fluid such as supercritical carbon dioxide
  • examples of other supercritical fluid species useful in the broad practice of the invention include, but are not limited to, carbon dioxide (as described above), oxygen, argon, krypton, xenon, ammonia, methane, methanol, dimethyl ketone, hydrogen, water, and sulfur hexafluoride.
  • the fluid supply system can, for example, comprise a carbon dioxide source (not shown) and a plurality of flow control elements (not shown) for generating a supercritical fluid.
  • the carbon dioxide source can include a CO 2 feed system
  • the flow control elements can include supply lines, valves, filters, pumps, and heaters.
  • the fluid supply system 140 can comprise an inlet valve (not shown) that is configured to open and close to allow or prevent the stream of supercritical carbon dioxide from flowing into the processing chamber 110.
  • controller 150 can be used to determine fluid parameters such as pressure, temperature, process time, and flow rate.
  • the process chemistry supply system 130 is coupled to the recirculation system 120, but this is not required for the invention. In alternate embodiments, the process chemistry supply system 130 can be configured differently, and can be coupled to different elements in the processing system 100.
  • the process chemistry is introduced by the process chemistry supply system 130 into the fluid introduced by the fluid supply system 140 at ratios that vary with the substrate properties, the chemistry being used and the process being performed in the processing chamber 110. Usually the ratio is roughly 1 to 15 percent by volume, which, for a chamber, recirculation system and associated plumbing having a volume of about one liter amounts to about 10 to 150 milliliters of process chemistry in most cases, but the ratio may be higher or lower.
  • the process chemistry supply system 130 can be configured to introduce one or more of the following process compositions, but not limited to: cleaning compositions for removing contaminants, residues, hardened residues, photoresist, hardened photoresist, post-etch residue, post-ash residue, post chemical-mechanical polishing (CMP) residue, post-polishing residue, or post-implant residue, or any combination thereof; cleaning compositions for removing particulate; drying compositions for drying thin films, porous thin films, porous low dielectric constant materials, or air-gap dielectrics, or any combination thereof; film-forming compositions for preparing dielectric thin films, metal thin films, or any combination thereof; healing compositions for restoring the dielectric constant of low dielectric constant (low-k) films; sealing compositions for sealing porous films; or any combination thereof. Additionally, the process chemistry supply system 130 can be configured to introduce solvents, co-solvents, surfactants, etchants, acids, bases, chelators, oxidizers, film-forming precursors, or any combination thereof.
  • the process chemistry supply system 130 can be configured to introduce N-methyl pyrrolidone (NMP), diglycol amine, hydroxyl amine, di- isopropyl amine, tri-isopropyl amine, tertiary amines, catechol, ammonium fluoride, ammonium bifluoride, methylacetoacetamide, ozone, propylene glycol monoethyl ether acetate, acetylacetone, dibasic esters, ethyl lactate, CHF 3 , BF3, HF, other fluorine containing chemicals, or any mixture thereof.
  • Other chemicals such as organic solvents may be utilized independently or in conjunction with the above chemicals to remove organic materials.
  • the organic solvents may include, for example, an alcohol, ether, and/or glycol, such as acetone, diacetone alcohol, dimethyl sulfoxide (DMSO), ethylene glycol, methanol, ethanol, propanol, or isopropanol (IPA).
  • an alcohol such as acetone, diacetone alcohol, dimethyl sulfoxide (DMSO), ethylene glycol, methanol, ethanol, propanol, or isopropanol (IPA).
  • DMSO dimethyl sulfoxide
  • IPA isopropanol
  • the process chemistry supply system 130 can comprise a cleaning chemistry assembly (not shown) for providing cleaning chemistry for generating supercritical cleaning solutions within the processing chamber.
  • the cleaning chemistry can include peroxides and a fluoride source.
  • the peroxides can include hydrogen peroxide, benzoyl peroxide, or any other suitable peroxide
  • the fluoride sources can include fluoride salts (such as ammonium fluoride salts), hydrogen fluoride, fluoride adducts (such as organo-ammonium fluoride adducts), and combinations thereof. Further details of fluoride sources and methods of generating supercritical processing solutions with fluoride sources are described in U.S. Patent Application Serial No.
  • the process chemistry supply system 130 can be configured to introduce chelating agents, complexing agents and other oxidants, organic and inorganic acids that can be introduced into the supercritical fluid solution with one or more carrier solvents, such as N 1 N- dimethylacetamide (DMAc), gamma-butyrolactone (BLO), dimethyl sulfoxide (DMSO), ethylene carbonate (EC), butylenes carbonate (BC), propylene carbonate (PC), N-methyl pyrrolidone (NMP), dimethylpiperidone, propylene carbonate, and alcohols (such a methanol, ethanol and 2-propanol).
  • carrier solvents such as N 1 N- dimethylacetamide (DMAc), gamma-butyrolactone (BLO), dimethyl sulfoxide (DMSO), ethylene carbonate (EC), butylenes carbonate (BC), propylene carbonate (PC), N-methyl pyrrolidone (NMP), dimethylpiperidone, propylene carbonate
  • the process chemistry supply system 130 can comprise a rinsing chemistry assembly (not shown) for providing rinsing chemistry for generating supercritical rinsing solutions within the processing chamber.
  • the rinsing chemistry can include one or more organic solvents including, but not limited to, alcohols and ketone.
  • the rinsing chemistry can comprise sulfolane, also known as thiocyclopentane-1 ,1 -dioxide, (cyclo)tetramethylene sulphone and 2,3,4,5-tetrahydrothiophene-1 ,1 -dioxide, which can be purchased from a number of venders, such as Degussa Stanlow Limited, Lake Court, Hursley Winchester SO21 2LD UK.
  • the process chemistry supply system 130 can be configured to introduce treating chemistry for curing, cleaning, healing (or restoring the dielectric constant of low-k materials), or sealing, or any combination, low dielectric constant films (porous or non-porous).
  • the chemistry can include hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS), dimethylsilyldiethylamine (DMSDEA), tetramethyldisilazane (TMDS), trimethylsilyldimethylamine (TMSDMA), dimethylsilyldimethylamine (DMSDMA), trimethylsilyldiethylamine (TMSDEA), bistrimethylsilyl urea (BTSU), bis(dimethylamino)methyl silane (B[DMA]MS), bis (dimethylamino)dimethyl silane (B[DMA]DS), HMCTS, dimethylaminopentamethyldisilane (DMAPMDS), dimethylaminodimethyldisilane (DMADMDS), disila-aza-cyclopentane (TDACP), disila-oza-cyclopentane (TDOCP), methyltrimethoxysilane (
  • the chemistry may include N-tert-butyl-1 ,1-dimethyl-1-(2,3,4,5- tetramethyl-2,4-cyclopentadiene-1-yl)silanamine, 1 ,3-diphenyl-1 ,1 ,3,3- tetramethyldisilazane, or tert-butylchlorodiphenylsilane.
  • N-tert-butyl-1 ,1-dimethyl-1-(2,3,4,5- tetramethyl-2,4-cyclopentadiene-1-yl)silanamine 1 ,3-diphenyl-1 ,1 ,3,3- tetramethyldisilazane
  • tert-butylchlorodiphenylsilane See U.S. Patent Application Serial No. 10/682,196, filed October 10, 2003, and titled "METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM," and U.S. Patent Application Serial No.
  • the process chemistry supply system 130 can be configured to introduce a peroxide during, for instance, cleaning processes.
  • the peroxide can be introduced with any one of the above process chemistries, or any mixture thereof.
  • the peroxide can include organic peroxides, or inorganic peroxides, or a combination thereof.
  • organic peroxides can include 2-butanone peroxide; 2,4-pentanedione peroxide; peracetic acid; t-butyl hydroperoxide; benzoyl peroxide; or m- chloroperbenzoic acid (mCPBA).
  • Other peroxides can include hydrogen peroxide.
  • the peroxide can include a diacyl peroxide, such as: decanoyl peroxide; lauroyl peroxide; succinic acid peroxide; or benzoyl peroxide; or any combination thereof.
  • the peroxide can include a dialkyl peroxide, such as: dicumyl peroxide; 2,5-di(t-butylperoxy)-2,5- dimethylhexane; t-butyl cumyl peroxide; ⁇ , ⁇ -bis(t- butylperoxy)diisopropylbenzene mixture of isomers; di(t-amyl) peroxide; di(t- butyl) peroxide; or 2,5-di(t-butylperoxy)-2,5-dimethyl-3-hexyne; or any combination thereof.
  • dialkyl peroxide such as: dicumyl peroxide; 2,5-di(t-butylperoxy)-2,5- dimethylhexane; t-butyl cumyl peroxide; ⁇ , ⁇ -bis(t- butylperoxy)diisopropylbenzene mixture of isomers; di(t-amyl) peroxide;
  • the peroxide can include a diperoxyketal, such as: 1 ,1-di(t-butylperoxy)-3,3,5-trimethylcyclohexane; 1 ,1-di(t- butylperoxy)cyclohexane; 1 ,1-di(t-amylperoxy)-cyclohexane; n-butyl 4,4-di(t- butylperoxy)valerate; ethyl 3,3-di-(t-amylperoxy)butanoate; t-butyl peroxy-2- ethylhexanoate; or ethyl 3,3-di(t-butylperoxy)butyrate; or any combination thereof.
  • a diperoxyketal such as: 1 ,1-di(t-butylperoxy)-3,3,5-trimethylcyclohexane; 1 ,1-di(t- butylperoxy)cyclohe
  • the peroxide can include a hydroperoxide, such as: cumene hydroperoxide; or t-butyl hydroperoxide; or any combination thereof.
  • the peroxide can include a ketone peroxide, such as: methyl ethyl ketone peroxide; or 2,4-pentanedione peroxide; or any combination thereof.
  • the peroxide can include a peroxydicarbonate, such as: di(n-propyl)peroxydicarbonate; di(sec-butyl)peroxydicarbonate; or di(2- ethylhexyl)peroxydicarbonate; or any combination thereof.
  • the peroxide can include a peroxyester, such as: 3-hydroxyl-1 ,1-dimethylbutyl peroxyneodecanoate; ⁇ -cumyl peroxyneodecanoate; t-amyl peroxyneodecanoate; t-butyl peroxyneodecanoate; t-butyl peroxypivalate; 2,5- di(2-ethylhexanoylperoxy)-2,5-dimethylhexane; t-amyl peroxy-2- ethylhexanoate; t-butyl peroxy-2-ethylhexanoate; t-amyl peroxyacetate; t-butyl peroxyacetate; t-butyl peroxybenzoate; OO-(t-amyl) O-(2- ethylhexyl)monoperoxycarbonate; OO-(t-butyl) O-isopropyl
  • the peroxide can include any combination of peroxides listed above.
  • the process chemistry supply system 130 is configured to introduce fluorosilicic acid.
  • the process chemistry supply system is configured to introduce fluorosilicic acid with a solvent, a co-solvent, a surfactant, an acid, a base, a peroxide, or an etchant.
  • the fluorosilicic acid can be introduced in combination with any of the chemicals presented above.
  • fluorosilicic acid can be introduced with N,N-dimethylacetamide (DMAc), gamma-butyrolactone (BLO), dimethyl sulfoxide (DMSO), ethylene carbonate (EC), butylene carbonate (BC), propylene carbonate (PC), N- methyl pyrrolidone (NMP), dimethylpiperidone, propylene carbonate, or an alcohol (such a methanol (MeOH), isopropyl alcohol (IPA), or ethanol).
  • DMAc N,N-dimethylacetamide
  • BLO gamma-butyrolactone
  • DMSO dimethyl sulfoxide
  • EC ethylene carbonate
  • BC butylene carbonate
  • PC propylene carbonate
  • NMP N- methyl pyrrolidone
  • dimethylpiperidone propylene carbonate
  • IPA isopropyl alcohol
  • the processing chamber 110 can be configured to process substrate 105 by exposing the substrate 105 to fluid from the fluid
  • the upper chamber assembly 112 can comprise a heater (not shown) for heating the processing chamber 110, the substrate 105, or the processing fluid, or a combination of two or more thereof. Alternately, a heater is not required. Additionally, the upper chamber assembly 112 can include flow components for flowing a processing fluid through the processing chamber 110. In one example, a circular flow pattern can be established. Alternately, the flow components for flowing the fluid can be configured differently to affect a different flow pattern. Alternatively, the upper chamber assembly 112 can be configured to fill the processing chamber 110.
  • the lower chamber assembly 115 can include a platen 116 configured to support substrate 105 and a drive mechanism 118 for translating the platen 116 in order to load and unload substrate 105, and seal lower chamber assembly 115 with upper chamber assembly 114.
  • the platen 116 can also be configured to heat or cool the substrate 105 before, during, and/or after processing the substrate 105.
  • the platen 116 can include one or more heater rods configured to elevate the temperature of the platen to approximately 31 0 C or greater.
  • the lower assembly 115 can include a lift pin assembly for displacing the substrate 105 from the upper surface of the platen 116 during substrate loading and unloading.
  • controller 150 includes a temperature control system coupled to one or more of the processing chamber 110, the fluid flow system 120 (or recirculation system), the platen 116, the high pressure fluid supply system 140, or the process chemistry supply system 130.
  • the temperature control system is coupled to heating elements embedded in one or more of these systems, and configured to elevate and maintain the temperature of the supercritical fluid to above the fluid's critical temperature, for example, approximately 31 0 C or greater.
  • the heating elements can, for example, include resistive heating elements.
  • a transfer system (not shown) can be used to move a substrate into and out of the processing chamber 110 through a slot (not shown).
  • the slot can be opened and closed by moving the platen 116, and in another example, the slot can be controlled using a gate valve (not shown).
  • the substrate can include semiconductor material, metallic material, dielectric material, ceramic material, or polymer material, or a combination of two or more thereof.
  • the semiconductor material can include Si, Ge, Si/Ge, or GaAs.
  • the metallic material can include Cu, Al, Ni, Pb, Ti, and/or Ta.
  • the dielectric material can include silica, silicon dioxide, quartz, aluminum oxide, sapphire, low dielectric constant materials, Teflon®, and/or polyimide.
  • the ceramic material can include aluminum oxide, silicon carbide, etc.
  • the processing system 100 can also comprise a pressure control system (not shown).
  • the pressure control system can be coupled to the processing chamber 110, but this is not required.
  • the pressure control system can be configured differently and coupled differently.
  • the pressure control system can include one or more pressure valves (not shown) for exhausting the processing chamber 110 and/or for regulating the pressure within the processing chamber 110.
  • the pressure control system can also include one or more pumps (not shown). For example, one pump may be used to increase the pressure within the processing chamber, and another pump may be used to evacuate the processing chamber 110.
  • the pressure control system can comprise seals for sealing the processing chamber.
  • the pressure control system can comprise an elevator for raising and lowering the substrate 105 and/or the platen 116.
  • the processing system 100 can comprise an exhaust control system.
  • the exhaust control system can be coupled to the processing chamber 110, but this is not required.
  • the exhaust control system can be configured differently and coupled differently.
  • the exhaust control system can include an exhaust gas collection vessel (not shown) and can be used to remove contaminants from the processing fluid. Alternately, the exhaust control system can be used to recycle the processing fluid.
  • processing system 200 comprises a processing chamber 210, a recirculation system 220, a process chemistry supply system 230, a fluid supply system 240, and a controller 250, all of which are configured to process substrate 205.
  • the controller 250 can be coupled to the processing chamber 210, the recirculation system 220, the process chemistry supply system 230, and the fluid supply system 240.
  • controller 250 can be coupled to a one or more additional controllers/computers (not shown), and controller 250 can obtain setup and/or configuration information from an additional controller/computer.
  • the recirculation system 220 can include a recirculation fluid heater 222, a pump 224, and a filter 226.
  • the process chemistry supply system 230 can include one or more chemistry introduction systems, each introduction system having a chemical source 232, 234, 236, and an injection system 233, 235, 237.
  • the injection systems 233, 235, 237 can include a pump (not shown) and an injection valve (not shown).
  • the chemical source can include a source of fluorosilicic acid.
  • the fluid supply system 240 can include a supercritical fluid source 242, a pumping system 244, and a supercritical fluid heater 246.
  • one or more injection valves, and/or exhaust valves may be utilized with the fluid supply system 240.
  • the processing chamber 210 can be configured to process substrate 205 by exposing the substrate 205 to fluid from the fluid supply system 240 and process chemistry from the process chemistry supply system 230 in a processing space 212.
  • processing chamber 210 can include an upper chamber assembly 214, and a lower chamber assembly 215 having a platen 216 and drive mechanism 218, as described above with reference to FIG. 1.
  • FIG. 4 depicts a cross-sectional view of a supercritical processing chamber 310 comprising upper chamber assembly 314, lower chamber assembly 315, platen 316 configured to support substrate 305, and drive mechanism 318 configured to raise and lower platen 316 between a substrate loading/unloading condition and a substrate processing condition.
  • Drive mechanism 318 can further include a drive cylinder 320, drive piston 322 having piston neck 323, sealing plate 324, pneumatic cavity 326, and hydraulic cavity 328. Additionally, supercritical processing chamber 310 further includes a plurality of sealing devices 330, 332, and 334 for providing a sealed, high pressure process space 312 in the processing chamber 310.
  • the fluid flow or recirculation system coupled to the processing chamber is configured to circulate the fluid through the processing chamber, and thereby permit the exposure of the substrate in the processing chamber to a flow of fluid.
  • the fluid such as supercritical carbon dioxide with process chemistry, can enter the processing chamber at a peripheral edge of the substrate through one or more inlets coupled to the fluid flow system.
  • an injection manifold 360 is shown as a ring having an annular fluid supply channel 362 coupled to one or more inlets 364.
  • the one or more inlets 364, as illustrated, include forty five (45) injection orifices canted at 45 degrees, thereby imparting azimuthal momentum, or axial momentum, or both, as well as radial momentum to the flow of high pressure fluid through process space 312 above substrate 305.
  • 45 degrees forty five injection orifices canted at 45 degrees, thereby imparting azimuthal momentum, or axial momentum, or both, as well as radial momentum to the flow of high pressure fluid through process space 312 above substrate 305.
  • the angle may be varied, including direct radial inward injection.
  • the fluid such as supercritical carbon dioxide exits the processing chamber adjacent a surface of the substrate through one or more outlets (not shown).
  • the one or more outlets can include two outlet holes positioned proximate to and above the center of substrate 305. The flow through the two outlets can be alternated from one outlet to the next outlet using a shutter valve.
  • the fluid such as supercritical carbon dioxide
  • the fluid can enter and exit from the processing chamber 110 as described in pending U.S. Patent Application Serial No. 11/018,922, Attorney Docket No. SSIT-115, filed December 20, 2004 entitled "Method and System for Flowing a Supercritical Fluid in a High Pressure Processing System,” the entire content of which is herein incorporated by reference in its entirety.
  • FIG. 6 a method of treating a substrate with a fluid in a supercritical state is provided. As depicted in flow chart 700, the method begins in 710 with placing a substrate onto a platen within a high pressure processing chamber configured to expose the substrate to a supercritical fluid processing solution.
  • a supercritical fluid is formed by bringing a fluid to a supercritical state by adjusting the pressure of the fluid to at or above the critical pressure of the fluid, and adjusting the temperature of the fluid to at or above the critical temperature of the fluid.
  • the supercritical fluid is introduced to the high pressure processing chamber through one or more inlets and discharged through one or more outlets.
  • the temperature of the supercritical fluid may be elevated to a value equal to or greater than 4O 0 C. In one embodiment, the temperature of the supercritical fluid is elevated to greater than 80 0 C to form a high temperature supercritical fluid. In a further embodiment, the temperature of the supercritical fluid is set to equal or greater than 12O 0 C.
  • a process chemistry comprising fluorosilicic acid is introduced to the supercritical fluid.
  • the fluorosilicic acid can, for example, be introduced with any one or combination of chemicals presented above.
  • the substrate is exposed to the supercritical fluid and process chemistry.
  • the process chemistry can comprise a cleaning composition, a film forming composition, a healing composition, or a sealing composition, or any combination thereof.
  • the process chemistry can comprise a cleaning composition containing fluorosilicic acid.
  • the temperature of the supercritical fluid is elevated above approximately 4O 0 C and is, for example, 135°C.
  • the pressure of the supercritical fluid is above the critical pressure and is, for instance, 2900 psi.
  • the cleaning composition can comprise fluorosilicic acid combined with, for instance, N-methyl pyrrolidone (NMP) in supercritical carbon dioxide.
  • NMP N-methyl pyrrolidone
  • a process recipe for removing post-etch residue(s) can comprise two steps including: (1) exposure of the substrate to a mixture of 200 microliters of fluorosilicic acid and 13 milliliters of NMP in supercritical carbon dioxide for approximately three minutes; and (2) exposure of the substrate to 13 milliliters of NMP in supercritical carbon dioxide for approximately three minutes. The first step can be repeated any number of times. Moreover, any step may be repeated.
  • time duration for each step, or sub-step may be varied greater than or less than those specified.
  • amount of any chemical in the process chemistry may be varied greater than or less than those specified, and the ratios may be varied.
  • temperature or pressure can be varied.
  • the process chemistry can comprise a first cleaning composition comprising a mixture of fluorosilicic acid and gamma- butyrolactone (BLO) in supercritical carbon dioxide, and a second cleaning composition comprising a mixture of fluorosilicic acid and isopropyl alcohol (IPA) in supercritical carbon dioxide.
  • BLO gamma- butyrolactone
  • IPA isopropyl alcohol
  • a process recipe for removing post-etch residue(s) can comprise three steps including: (1) exposure of the substrate to 10 milliliters of gamma-butyrolactone (BLO) and 200 microliters of fluorosilicic acid in supercritical carbon dioxide for approximately three minutes; (2) exposure of the substrate to 10 milliliters of isopropyl alcohol (IPA) and 200 microliters of fluorosilicic acid in supercritical carbon dioxide for approximately three minutes; and (3) exposure of the substrate to 13 milliliters of 12:1 ratio MeOH:H 2 O in supercritical carbon dioxide for approximately three minutes.
  • BLO gamma-butyrolactone
  • IPA isopropyl alcohol
  • the first, second, and third steps can be repeated any number of times.
  • any step may be repeated.
  • time duration for each step, or sub-step may be varied greater than or less than those specified.
  • amount of any chemical in the process chemistry may be varied greater than or less than those specified, and the ratios may be varied.
  • temperature or pressure can be varied.
  • the process chemistry can comprise a first cleaning composition comprising a mixture of fluorosilicic acid and gamma- butyrolactone (BLO) in supercritical carbon dioxide, and a second cleaning composition comprising a mixture of fluorosilicic acid and isopropyl alcohol (IPA) in supercritical carbon dioxide, and a third cleaning composition comprising 2-butanone peroxide in supercritical carbon dioxide.
  • BLO gamma- butyrolactone
  • IPA isopropyl alcohol
  • a process recipe for removing post-etch residue(s) can comprise three steps including: (1 ) exposure of the substrate to 10 milliliters of gamma-butyrolactone (BLO) and 200 microliters of fluorosilicic acid in supercritical carbon dioxide for approximately three minutes; (2) exposure of the substrate to 10 milliliters of isopropyl alcohol (IPA) and 200 microliters of fluorosilicic acid in supercritical carbon dioxide for approximately three minutes; and (3) exposure of the substrate to 13 milliliters of 2-butanone peroxide in supercritical carbon dioxide for approximately three minutes.
  • BLO gamma-butyrolactone
  • IPA isopropyl alcohol
  • 2-butanone peroxide in supercritical carbon dioxide for approximately three minutes.
  • the first, second, and third steps can be repeated any number of times, for instance, they may be repeated once. Moreover, any step may be repeated.
  • time duration for each step, or sub-step may be varied greater than or less than those specified.
  • amount of any chemical in the process chemistry may be varied greater than or less than those specified, and the ratios may be varied.
  • temperature or pressure can be varied.
  • a partial pressure of ozone formed in oxygen can be flowed over the surface of the substrate for a period of time sufficient to oxidize residues either partly or wholly.
  • the ozone process gas flow rate can, for example, range from 1 to 50 slm (standard liters per minute) and, by way of further example, the flow rate can range from 5 to 15 slm.
  • the pressure can, for example, range from 1 to 5 atm and, by way of further example, range from 1 to 3 atm.

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  • Chemical & Material Sciences (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
PCT/US2005/047343 2005-02-15 2005-12-29 Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid Ceased WO2006088560A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515178B2 (en) 2020-03-16 2022-11-29 Tokyo Electron Limited System and methods for wafer drying

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
JP4555729B2 (ja) * 2005-05-17 2010-10-06 積水化学工業株式会社 レジスト除去方法及びレジスト除去装置
JP2007305676A (ja) * 2006-05-09 2007-11-22 Sony Corp 基板の処理方法及び処理装置
KR100829923B1 (ko) * 2006-08-30 2008-05-16 세메스 주식회사 스핀헤드 및 이를 이용하는 기판처리방법
JP5060791B2 (ja) * 2007-01-26 2012-10-31 独立行政法人森林総合研究所 木材の乾燥方法、木材への薬剤浸透方法及び乾燥装置
US8153533B2 (en) * 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
US8961701B2 (en) * 2008-09-24 2015-02-24 Lam Research Corporation Method and system of drying a microelectronic topography
US9620410B1 (en) 2009-01-20 2017-04-11 Lam Research Corporation Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process
US20100184301A1 (en) * 2009-01-20 2010-07-22 Lam Research Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process
JP2012151398A (ja) * 2011-01-21 2012-08-09 Toshiba Corp 超臨界乾燥装置及び方法
JP6189650B2 (ja) * 2013-06-07 2017-08-30 昭和電工ガスプロダクツ株式会社 超臨界処理装置
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030045117A1 (en) * 2001-09-04 2003-03-06 International Business Machines Corporation Liquid or supercritical carbon dioxide composition and process of removing residue from a precision surface using same
US20040112402A1 (en) * 2002-12-13 2004-06-17 Simons John P. Apparatus and method for rapid thermal control of a workpiece in liquid or dense phase fluid
US20040171502A1 (en) * 2003-02-28 2004-09-02 Clark Shan C. Cleaning residues from semiconductor structures
US20040266635A1 (en) * 2003-06-24 2004-12-30 Korzenski Michael B. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050006310A1 (en) * 2003-07-10 2005-01-13 Rajat Agrawal Purification and recovery of fluids in processing applications

Family Cites Families (408)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2439689A (en) 1948-04-13 Method of rendering glass
CH251213A (fr) 1946-02-05 1947-10-15 Hanvag Ges Fuer Tech Vervollko Pompe à membrane.
US2625886A (en) 1947-08-21 1953-01-20 American Brake Shoe Co Pump
US2617719A (en) 1950-12-29 1952-11-11 Stanolind Oil & Gas Co Cleaning porous media
FR1499491A (fr) 1966-09-30 1967-10-27 Albert Handtmann Metallgiesser Robinet de passage et de fermeture, en particulier pour boisson
US3642020A (en) 1969-11-17 1972-02-15 Cameron Iron Works Inc Pressure operated{13 positive displacement shuttle valve
US3744660A (en) 1970-12-30 1973-07-10 Combustion Eng Shield for nuclear reactor vessel
FR2128426B1 (enExample) 1971-03-02 1980-03-07 Cnen
US3890176A (en) 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US3968885A (en) 1973-06-29 1976-07-13 International Business Machines Corporation Method and apparatus for handling workpieces
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4029517A (en) 1976-03-01 1977-06-14 Autosonics Inc. Vapor degreasing system having a divider wall between upper and lower vapor zone portions
US4091643A (en) 1976-05-14 1978-05-30 Ama Universal S.P.A. Circuit for the recovery of solvent vapor evolved in the course of a cleaning cycle in dry-cleaning machines or plants, and for the de-pressurizing of such machines
GB1594935A (en) 1976-11-01 1981-08-05 Gen Descaling Co Ltd Closure for pipe or pressure vessel and seal therefor
DE2741024A1 (de) 1977-09-12 1979-03-22 Wilms Gmbh Membranpumpe
JPS5448172A (en) 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
US4219333A (en) 1978-07-03 1980-08-26 Harris Robert D Carbonated cleaning solution
US4349415A (en) 1979-09-28 1982-09-14 Critical Fluid Systems, Inc. Process for separating organic liquid solutes from their solvent mixtures
US4367140A (en) 1979-11-05 1983-01-04 Sykes Ocean Water Ltd. Reverse osmosis liquid purification apparatus
JPS56142629A (en) 1980-04-09 1981-11-07 Nec Corp Vacuum device
US4355937A (en) 1980-12-24 1982-10-26 International Business Machines Corporation Low shock transmissive antechamber seal mechanisms for vacuum chamber type semi-conductor wafer electron beam writing apparatus
DE3112434A1 (de) 1981-03-28 1982-10-07 Depa GmbH, 4000 Düsseldorf Druckluftgetriebene doppelmembran-pumpe
JPS6117151Y2 (enExample) 1981-05-19 1986-05-26
US4682937A (en) 1981-11-12 1987-07-28 The Coca-Cola Company Double-acting diaphragm pump and reversing mechanism therefor
DE3145815C2 (de) 1981-11-19 1984-08-09 AGA Gas GmbH, 2102 Hamburg Verfahren zum Entfernen von ablösungsfähigen Materialschichten von beschichteten Gegenständen,
US4522788A (en) 1982-03-05 1985-06-11 Leco Corporation Proximate analyzer
FR2536433A1 (fr) 1982-11-19 1984-05-25 Privat Michel Procede et installation de nettoyage et decontamination particulaire de vetements, notamment de vetements contamines par des particules radioactives
JPS604007U (ja) 1983-06-20 1985-01-12 株式会社ヨコオ 伸縮多段ロツドアンテナ
US4626509A (en) 1983-07-11 1986-12-02 Data Packaging Corp. Culture media transfer assembly
US4865061A (en) 1983-07-22 1989-09-12 Quadrex Hps, Inc. Decontamination apparatus for chemically and/or radioactively contaminated tools and equipment
US4549467A (en) 1983-08-03 1985-10-29 Wilden Pump & Engineering Co. Actuator valve
US4475993A (en) 1983-08-15 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Extraction of trace metals from fly ash
GB8332394D0 (en) 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
US4877530A (en) 1984-04-25 1989-10-31 Cf Systems Corporation Liquid CO2 /cosolvent extraction
JPS60246635A (ja) 1984-05-22 1985-12-06 Anelva Corp 自動基板処理装置
JPS60192333U (ja) 1984-05-31 1985-12-20 日本メクトロン株式会社 キ−ボ−ドスイツチ
US4693777A (en) 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4960140A (en) 1984-11-30 1990-10-02 Ishijima Industrial Co., Ltd. Washing arrangement for and method of washing lead frames
JPS61231166A (ja) 1985-04-08 1986-10-15 Hitachi Ltd 複合超高真空装置
US4788043A (en) 1985-04-17 1988-11-29 Tokuyama Soda Kabushiki Kaisha Process for washing semiconductor substrate with organic solvent
US4778356A (en) 1985-06-11 1988-10-18 Hicks Cecil T Diaphragm pump
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4925790A (en) 1985-08-30 1990-05-15 The Regents Of The University Of California Method of producing products by enzyme-catalyzed reactions in supercritical fluids
US5044871A (en) 1985-10-24 1991-09-03 Texas Instruments Incorporated Integrated circuit processing system
US4827867A (en) 1985-11-28 1989-05-09 Daikin Industries, Ltd. Resist developing apparatus
JPS6299619U (enExample) 1985-12-13 1987-06-25
JPS62111442U (enExample) 1985-12-28 1987-07-16
DE3608783A1 (de) 1986-03-15 1987-09-17 Telefunken Electronic Gmbh Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung
CA1287594C (en) 1986-04-04 1991-08-13 Miroslav Eror Method and apparatus for handling and processing wafer like materials
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
GB8709064D0 (en) 1986-04-28 1987-05-20 Varian Associates Wafer handling arm
US4670126A (en) 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system
WO1987007309A1 (en) 1986-05-19 1987-12-03 Novellus Systems, Inc. Deposition apparatus with automatic cleaning means and method of use
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPS63252439A (ja) 1986-12-19 1988-10-19 アプライド　マテリアルズインコーポレーテッド 多チャンバの統合処理システム
JPS63157870A (ja) 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US4759917A (en) 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic
JPS63256326A (ja) 1987-04-15 1988-10-24 Hitachi Ltd 真空チヤツクおよびその製造方法
US4879004A (en) 1987-05-07 1989-11-07 Micafil Ag Process for the extraction of oil or polychlorinated biphenyl from electrical parts through the use of solvents and for distillation of the solvents
JPS63303059A (ja) 1987-05-30 1988-12-09 Tokuda Seisakusho Ltd 真空処理装置
US4924892A (en) 1987-07-28 1990-05-15 Mazda Motor Corporation Painting truck washing system
DE3725565A1 (de) 1987-08-01 1989-02-16 Peter Weil Verfahren und anlage zum entlacken von gegenstaenden mit einem tauchbehaelter mit loesungsmittel
DE3725611A1 (de) 1987-08-01 1989-02-09 Henkel Kgaa Verfahren zur gemeinsamen abtrennung von stoerelementen aus wertmetall-elektrolytloesungen
US5105556A (en) 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4838476A (en) 1987-11-12 1989-06-13 Fluocon Technologies Inc. Vapour phase treatment process and apparatus
EP0343233B1 (en) 1987-11-27 1994-02-02 Battelle Memorial Institute Supercritical fluid reverse micelle separation
US4933404A (en) 1987-11-27 1990-06-12 Battelle Memorial Institute Processes for microemulsion polymerization employing novel microemulsion systems
US5266205A (en) 1988-02-04 1993-11-30 Battelle Memorial Institute Supercritical fluid reverse micelle separation
US4789077A (en) 1988-02-24 1988-12-06 Public Service Electric & Gas Company Closure apparatus for a high pressure vessel
JP2663483B2 (ja) 1988-02-29 1997-10-15 勝 西川 レジストパターン形成方法
JPH01246835A (ja) 1988-03-29 1989-10-02 Toshiba Corp ウエハ処理装置
US4823976A (en) 1988-05-04 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Quick actuating closure
US5224504A (en) 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5185296A (en) 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
DE3836731A1 (de) 1988-10-28 1990-05-03 Henkel Kgaa Verfahren zur abtrennung von stoerelementen aus wertmetall-elektrolytloesungen
JP2927806B2 (ja) 1988-11-30 1999-07-28 山形日本電気株式会社 半導体装置の製造装置
US5013366A (en) 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5051135A (en) 1989-01-30 1991-09-24 Kabushiki Kaisha Tiyoda Seisakusho Cleaning method using a solvent while preventing discharge of solvent vapors to the environment
JPH02209729A (ja) 1989-02-09 1990-08-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び異物除去装置
DE3904514C2 (de) 1989-02-15 1999-03-11 Oeffentliche Pruefstelle Und T Verfahren zum Reinigen bzw. Waschen von Bekleidungsteilen o. dgl.
DE4004111C2 (de) 1989-02-15 1999-08-19 Deutsches Textilforschzentrum Verfahren zur Vorbehandlung von textilen Flächengebilden oder Garnen
EP0409972B1 (en) 1989-02-16 1992-10-21 PAWLISZYN, Janusz B. Apparatus and method for delivering supercritical fluid
DE3906735C2 (de) 1989-03-03 1999-04-15 Deutsches Textilforschzentrum Verfahren zum Bleichen
DE3906724C2 (de) 1989-03-03 1998-03-12 Deutsches Textilforschzentrum Verfahren zum Färben von textilen Substraten
DE3906737A1 (de) 1989-03-03 1990-09-13 Deutsches Textilforschzentrum Verfahren zum mercerisieren, laugieren oder abkochen
US4879431A (en) 1989-03-09 1989-11-07 Biomedical Research And Development Laboratories, Inc. Tubeless cell harvester
US5213485A (en) 1989-03-10 1993-05-25 Wilden James K Air driven double diaphragm pump
US5169296A (en) 1989-03-10 1992-12-08 Wilden James K Air driven double diaphragm pump
US5068040A (en) 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5288333A (en) 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
DE3915586A1 (de) 1989-05-12 1990-11-15 Henkel Kgaa Verfahren zur zweiphasen-extraktion von metallionen aus feste metalloxide enthaltenden phasen, mittel und verwendung
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
JPH02304941A (ja) 1989-05-19 1990-12-18 Seiko Epson Corp 半導体装置の製造方法
US4923828A (en) 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
JP2888253B2 (ja) 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
US5062770A (en) 1989-08-11 1991-11-05 Systems Chemistry, Inc. Fluid pumping apparatus and system with leak detection and containment
US4983223A (en) 1989-10-24 1991-01-08 Chenpatents Apparatus and method for reducing solvent vapor losses
US5226441A (en) 1989-11-13 1993-07-13 Cmb Industries Backflow preventor with adjustable outflow direction
US5213619A (en) 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
US5196134A (en) 1989-12-20 1993-03-23 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same
US5269850A (en) 1989-12-20 1993-12-14 Hughes Aircraft Company Method of removing organic flux using peroxide composition
US5169408A (en) 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
US5186594A (en) 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
US5217043A (en) 1990-04-19 1993-06-08 Milic Novakovic Control valve
ES2062595T3 (es) 1990-04-20 1994-12-16 Applied Materials Inc Aparato y metodo de una valvula de hendidura.
US5370741A (en) 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
DE4018464A1 (de) 1990-06-08 1991-12-12 Ott Kg Lewa Membran fuer eine hydraulisch angetriebene membranpumpe
US5071485A (en) 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow
US5236669A (en) 1990-09-12 1993-08-17 E. I. Du Pont De Nemours And Company Pressure vessel
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
DE4106180A1 (de) 1990-10-08 1992-04-09 Dirk Dipl Ing Budde Doppel-membranpumpe
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
JP2782560B2 (ja) 1990-12-12 1998-08-06 富士写真フイルム株式会社 安定化処理液及びハロゲン化銀カラー写真感光材料の処理方法
US5306350A (en) 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
US5143103A (en) 1991-01-04 1992-09-01 International Business Machines Corporation Apparatus for cleaning and drying workpieces
CA2059841A1 (en) 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
US5185058A (en) 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
US5201960A (en) 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
AT395951B (de) 1991-02-19 1993-04-26 Union Ind Compr Gase Gmbh Reinigung von werkstuecken mit organischen rueckstaenden
CH684402A5 (de) 1991-03-04 1994-09-15 Xorella Ag Wettingen Vorrichtung zum Verschieben und Schwenken eines Behälter-Verschlusses.
JPH04284648A (ja) 1991-03-14 1992-10-09 Fujitsu Ltd ウエーハ支持用ドライチャックラバー
EP0514337B1 (de) 1991-05-17 1995-11-22 Ciba-Geigy Ag Verfahren zum Färben von hydrophobem Textilmaterial mit Dispersionsfarbstoffen aus überkritischem CO2
US5195878A (en) 1991-05-20 1993-03-23 Hytec Flow Systems Air-operated high-temperature corrosive liquid pump
US5225173A (en) 1991-06-12 1993-07-06 Idaho Research Foundation, Inc. Methods and devices for the separation of radioactive rare earth metal isotopes from their alkaline earth metal precursors
US5730874A (en) 1991-06-12 1998-03-24 Idaho Research Foundation, Inc. Extraction of metals using supercritical fluid and chelate forming legand
US5356538A (en) 1991-06-12 1994-10-18 Idaho Research Foundation, Inc. Supercritical fluid extraction
US5274129A (en) 1991-06-12 1993-12-28 Idaho Research Foundation, Inc. Hydroxamic acid crown ethers
US5965025A (en) 1991-06-12 1999-10-12 Idaho Research Foundation, Inc. Fluid extraction
US5279615A (en) 1991-06-14 1994-01-18 The Clorox Company Method and composition using densified carbon dioxide and cleaning adjunct to clean fabrics
US5243821A (en) 1991-06-24 1993-09-14 Air Products And Chemicals, Inc. Method and apparatus for delivering a continuous quantity of gas over a wide range of flow rates
US5174917A (en) 1991-07-19 1992-12-29 Monsanto Company Compositions containing n-ethyl hydroxamic acid chelants
US5251776A (en) 1991-08-12 1993-10-12 H. William Morgan, Jr. Pressure vessel
US5320742A (en) 1991-08-15 1994-06-14 Mobil Oil Corporation Gasoline upgrading process
US5431843A (en) 1991-09-04 1995-07-11 The Clorox Company Cleaning through perhydrolysis conducted in dense fluid medium
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
GB2259525B (en) 1991-09-11 1995-06-28 Ciba Geigy Ag Process for dyeing cellulosic textile material with disperse dyes
US5213622A (en) 1991-10-11 1993-05-25 Air Products And Chemicals, Inc. Cleaning agents for fabricating integrated circuits and a process for using the same
DE9112761U1 (de) 1991-10-14 1992-04-09 Krones Ag Hermann Kronseder Maschinenfabrik, 8402 Neutraubling Gefäßverschließmaschine
US5221019A (en) 1991-11-07 1993-06-22 Hahn & Clay Remotely operable vessel cover positioner
EP0543779A1 (de) 1991-11-20 1993-05-26 Ciba-Geigy Ag Verfahren zum optischen Aufhellen von hydrophobem Textilmaterial mit dispersen optischen Aufhellern in überkritischem CO2
KR930019861A (ko) 1991-12-12 1993-10-19 완다 케이. 덴슨-로우 조밀상 기체를 이용한 코팅 방법
US5550211A (en) 1991-12-18 1996-08-27 Schering Corporation Method for removing residual additives from elastomeric articles
US5190373A (en) 1991-12-24 1993-03-02 Union Carbide Chemicals & Plastics Technology Corporation Method, apparatus, and article for forming a heated, pressurized mixture of fluids
DE4200352A1 (de) 1992-01-09 1993-08-19 Deutsches Textilforschzentrum Verfahren zum aufbringen von substanzen auf fasermaterialien und textile substrate
US5474812A (en) 1992-01-10 1995-12-12 Amann & Sohne Gmbh & Co. Method for the application of a lubricant on a sewing yarn
DE4200498A1 (de) 1992-01-10 1993-07-15 Amann & Soehne Verfahren zum auftragen einer avivage
DE69334213T2 (de) 1992-03-27 2009-06-18 University Of North Carolina At Chapel Hill Verfahren zur Herstellung von Fluoropolymeren
US5240390A (en) 1992-03-27 1993-08-31 Graco Inc. Air valve actuator for reciprocable machine
US5688879A (en) 1992-03-27 1997-11-18 The University Of North Carolina At Chapel Hill Method of making fluoropolymers
US5404894A (en) 1992-05-20 1995-04-11 Tokyo Electron Kabushiki Kaisha Conveyor apparatus
US5313965A (en) 1992-06-01 1994-05-24 Hughes Aircraft Company Continuous operation supercritical fluid treatment process and system
JPH0613361A (ja) 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
US5401322A (en) 1992-06-30 1995-03-28 Southwest Research Institute Apparatus and method for cleaning articles utilizing supercritical and near supercritical fluids
US6165282A (en) 1992-06-30 2000-12-26 Southwest Research Institute Method for contaminant removal using natural convection flow and changes in solubility concentration by temperature
US5352327A (en) 1992-07-10 1994-10-04 Harris Corporation Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer
US5370742A (en) 1992-07-13 1994-12-06 The Clorox Company Liquid/supercritical cleaning with decreased polymer damage
US5267455A (en) 1992-07-13 1993-12-07 The Clorox Company Liquid/supercritical carbon dioxide dry cleaning system
US5285352A (en) 1992-07-15 1994-02-08 Motorola, Inc. Pad array semiconductor device with thermal conductor and process for making the same
US5368171A (en) 1992-07-20 1994-11-29 Jackson; David P. Dense fluid microwave centrifuge
US5746008A (en) 1992-07-29 1998-05-05 Shinko Electric Co., Ltd. Electronic substrate processing system using portable closed containers
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
US5316591A (en) 1992-08-10 1994-05-31 Hughes Aircraft Company Cleaning by cavitation in liquefied gas
US5339844A (en) 1992-08-10 1994-08-23 Hughes Aircraft Company Low cost equipment for cleaning using liquefiable gases
US5456759A (en) 1992-08-10 1995-10-10 Hughes Aircraft Company Method using megasonic energy in liquefied gases
US5261965A (en) 1992-08-28 1993-11-16 Texas Instruments Incorporated Semiconductor wafer cleaning using condensed-phase processing
DE4230485A1 (de) 1992-09-11 1994-03-17 Linde Ag Anlage zur Reinigung mit verflüssigten oder überkritischen Gasen
US5589224A (en) 1992-09-30 1996-12-31 Applied Materials, Inc. Apparatus for full wafer deposition
EP0591595A1 (en) 1992-10-08 1994-04-13 International Business Machines Corporation Molecular recording/reproducing method and recording medium
US5337446A (en) 1992-10-27 1994-08-16 Autoclave Engineers, Inc. Apparatus for applying ultrasonic energy in precision cleaning
US5355901A (en) 1992-10-27 1994-10-18 Autoclave Engineers, Ltd. Apparatus for supercritical cleaning
US5294261A (en) 1992-11-02 1994-03-15 Air Products And Chemicals, Inc. Surface cleaning using an argon or nitrogen aerosol
US5328722A (en) 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
JP2548062B2 (ja) 1992-11-13 1996-10-30 日本エー・エス・エム株式会社 縦型熱処理装置用ロードロックチャンバー
US5514220A (en) 1992-12-09 1996-05-07 Wetmore; Paula M. Pressure pulse cleaning
WO1994014240A1 (en) 1992-12-11 1994-06-23 The Regents Of The University Of California Microelectromechanical signal processors
KR100251873B1 (ko) 1993-01-21 2000-04-15 마쓰바 구니유키 종형 열처리 장치
NZ260144A (en) 1993-04-12 1995-10-26 Colgate Palmolive Co Cleaning composition; contains three liquid phases which merge at a tricritical point; use for removing tar or grease from articles
US5403665A (en) 1993-06-18 1995-04-04 Regents Of The University Of California Method of applying a monolayer lubricant to micromachines
JPH07142333A (ja) 1993-06-29 1995-06-02 Kawasaki Steel Corp レジストの現像・リンス方法及びその装置
US5312882A (en) 1993-07-30 1994-05-17 The University Of North Carolina At Chapel Hill Heterogeneous polymerization in carbon dioxide
JP3338134B2 (ja) 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
US5364497A (en) 1993-08-04 1994-11-15 Analog Devices, Inc. Method for fabricating microstructures using temporary bridges
DE4429470A1 (de) 1993-08-23 1995-03-02 Ciba Geigy Ag Verfahren zur Verbesserung der Stabilität von Färbungen auf hydrophoben Textilmaterial
US5433334A (en) 1993-09-08 1995-07-18 Reneau; Raymond P. Closure member for pressure vessel
US5377705A (en) 1993-09-16 1995-01-03 Autoclave Engineers, Inc. Precision cleaning system
US5370740A (en) 1993-10-01 1994-12-06 Hughes Aircraft Company Chemical decomposition by sonication in liquid carbon dioxide
US5656097A (en) 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5417768A (en) 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
US5509431A (en) 1993-12-14 1996-04-23 Snap-Tite, Inc. Precision cleaning vessel
DE4344021B4 (de) 1993-12-23 2006-06-29 Deutsches Textilforschungszentrum Nord-West E.V. Färbung von beschlichteten textilen Flächengebilden aus Synthesefasermaterial in überkritischem Medien
TW274630B (enExample) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5872257A (en) 1994-04-01 1999-02-16 University Of Pittsburgh Further extractions of metals in carbon dioxide and chelating agents therefor
US5641887A (en) 1994-04-01 1997-06-24 University Of Pittsburgh Extraction of metals in carbon dioxide and chelating agents therefor
DE69523208T2 (de) 1994-04-08 2002-06-27 Texas Instruments Inc., Dallas Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase
JP3320549B2 (ja) 1994-04-26 2002-09-03 岩手東芝エレクトロニクス株式会社 被膜除去方法および被膜除去剤
US5467492A (en) 1994-04-29 1995-11-21 Hughes Aircraft Company Dry-cleaning of garments using liquid carbon dioxide under agitation as cleaning medium
US5934856A (en) 1994-05-23 1999-08-10 Tokyo Electron Limited Multi-chamber treatment system
KR0137841B1 (ko) 1994-06-07 1998-04-27 문정환 식각잔류물 제거방법
US5482564A (en) 1994-06-21 1996-01-09 Texas Instruments Incorporated Method of unsticking components of micro-mechanical devices
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5637151A (en) 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5522938A (en) 1994-08-08 1996-06-04 Texas Instruments Incorporated Particle removal in supercritical liquids using single frequency acoustic waves
US5501761A (en) 1994-10-18 1996-03-26 At&T Corp. Method for stripping conformal coatings from circuit boards
EP0711864B1 (en) 1994-11-08 2001-06-13 Raytheon Company Dry-cleaning of garments using gas-jet agitation
DE69520687T2 (de) 1994-11-09 2001-08-23 R.R. Street & Co., Inc. Verfahren und system zur aufbereitung von unter druck stehenden flüssigen lösungsmitteln zur reinigung von substraten
US5505219A (en) 1994-11-23 1996-04-09 Litton Systems, Inc. Supercritical fluid recirculating system for a precision inertial instrument parts cleaner
DE4443778A1 (de) 1994-12-08 1996-06-20 Abel Gmbh & Co Doppelmembranpumpe
JPH08186140A (ja) 1994-12-27 1996-07-16 Toshiba Corp 樹脂封止型半導体装置の製造方法および製造装置
US5556497A (en) 1995-01-09 1996-09-17 Essef Corporation Fitting installation process
US5629918A (en) 1995-01-20 1997-05-13 The Regents Of The University Of California Electromagnetically actuated micromachined flap
DE69610652T2 (de) 1995-01-26 2001-05-10 Texas Instruments Inc., Dallas Verfahren zur Entfernung von Oberflächenkontamination
WO1996025760A1 (en) 1995-02-15 1996-08-22 Hitachi, Ltd. Method and device for manufacturing semiconductor
JPH08222508A (ja) 1995-02-15 1996-08-30 Fuji Photo Film Co Ltd 感光性組成物のパターン形成方法
JP3277114B2 (ja) 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 陰画調レジスト像の作製方法
EP0727711A3 (en) 1995-02-17 1997-04-09 Ocg Microelectronic Materials Photoresist compositions containing supercritical fluid fractionated polymeric resin binders
DE19506404C1 (de) 1995-02-23 1996-03-14 Siemens Ag Verfahren zum Freiätzen (Separieren) und Trocknen mikromechanischer Komponenten
WO1996027704A1 (en) 1995-03-06 1996-09-12 Unilever N.V. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5683977A (en) 1995-03-06 1997-11-04 Lever Brothers Company, Division Of Conopco, Inc. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5676705A (en) 1995-03-06 1997-10-14 Lever Brothers Company, Division Of Conopco, Inc. Method of dry cleaning fabrics using densified carbon dioxide
US5681398A (en) 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
JPH08264500A (ja) 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
US5644855A (en) 1995-04-06 1997-07-08 Air Products And Chemicals, Inc. Cryogenically purged mini environment
JPH08306632A (ja) 1995-04-27 1996-11-22 Shin Etsu Handotai Co Ltd 気相エピタキシャル成長装置
US6097015A (en) 1995-05-22 2000-08-01 Healthbridge, Inc. Microwave pressure vessel and method of sterilization
JP3983831B2 (ja) 1995-05-30 2007-09-26 シグマメルテック株式会社 基板ベーキング装置及び基板ベーキング方法
JPH08330266A (ja) 1995-05-31 1996-12-13 Texas Instr Inc <Ti> 半導体装置等の表面を浄化し、処理する方法
US6454945B1 (en) 1995-06-16 2002-09-24 University Of Washington Microfabricated devices and methods
WO1997000442A1 (en) 1995-06-16 1997-01-03 The University Of Washington Microfabricated differential extraction device and method
JP2676334B2 (ja) 1995-07-31 1997-11-12 住友重機械工業株式会社 ロボットアーム
US6239038B1 (en) 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US5783082A (en) 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5807607A (en) 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US6037277A (en) 1995-11-16 2000-03-14 Texas Instruments Incorporated Limited-volume apparatus and method for forming thin film aerogels on semiconductor substrates
US5736425A (en) 1995-11-16 1998-04-07 Texas Instruments Incorporated Glycol-based method for forming a thin-film nanoporous dielectric
US6380105B1 (en) 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US5955140A (en) 1995-11-16 1999-09-21 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US6159295A (en) 1995-11-16 2000-12-12 Texas Instruments Incorporated Limited-volume apparatus for forming thin film aerogels on semiconductor substrates
US5679169A (en) 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US5992680A (en) 1996-01-29 1999-11-30 Smith; Philip E. Slidable sealing lid apparatus for subsurface storage containers
JPH09213772A (ja) 1996-01-30 1997-08-15 Dainippon Screen Mfg Co Ltd 基板保持装置
US5717178A (en) * 1996-02-06 1998-02-10 Eaton Corporation Locking mechanism for electrical switches
US6232417B1 (en) 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US5804607A (en) 1996-03-21 1998-09-08 International Business Machines Corporation Process for making a foamed elastomeric polymer
US5726211A (en) 1996-03-21 1998-03-10 International Business Machines Corporation Process for making a foamed elastometric polymer
JP3955340B2 (ja) 1996-04-26 2007-08-08 株式会社神戸製鋼所 高温高圧ガス処理装置
DK9600149U3 (da) 1996-05-01 1997-09-12 Moerch & Soenner A S Dækselaggregat
US5766367A (en) 1996-05-14 1998-06-16 Sandia Corporation Method for preventing micromechanical structures from adhering to another object
JPH09303557A (ja) 1996-05-21 1997-11-25 Kobe Steel Ltd 高圧容器の密封装置
US5618751A (en) 1996-05-23 1997-04-08 International Business Machines Corporation Method of making single-step trenches using resist fill and recess
US6203582B1 (en) 1996-07-15 2001-03-20 Semitool, Inc. Modular semiconductor workpiece processing tool
US5868856A (en) 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
US5669251A (en) 1996-07-30 1997-09-23 Hughes Aircraft Company Liquid carbon dioxide dry cleaning system having a hydraulically powered basket
US5868862A (en) 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
US5706319A (en) 1996-08-12 1998-01-06 Joseph Oat Corporation Reactor vessel seal and method for temporarily sealing a reactor pressure vessel from the refueling canal
US6270948B1 (en) 1996-08-22 2001-08-07 Kabushiki Kaisha Toshiba Method of forming pattern
US5798438A (en) 1996-09-09 1998-08-25 University Of Massachusetts Polymers with increased order
US5881577A (en) 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US5908510A (en) 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5797719A (en) 1996-10-30 1998-08-25 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5888050A (en) 1996-10-30 1999-03-30 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5725987A (en) 1996-11-01 1998-03-10 Xerox Corporation Supercritical processes
US5714299A (en) 1996-11-04 1998-02-03 Xerox Corporation Processes for toner additives with liquid carbon dioxide
JPH10144757A (ja) 1996-11-08 1998-05-29 Dainippon Screen Mfg Co Ltd 基板処理システム
JPH10144650A (ja) 1996-11-11 1998-05-29 Mitsubishi Electric Corp 半導体材料の洗浄装置
AU6135298A (en) 1997-01-27 1998-08-26 California Institute Of Technology Mems electrospray nozzle for mass spectroscopy
US5906866A (en) 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
JP3437734B2 (ja) 1997-02-26 2003-08-18 富士通株式会社 製造装置
US5896870A (en) 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US6309975B1 (en) 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
JPH10261687A (ja) 1997-03-18 1998-09-29 Furontetsuku:Kk 半導体等製造装置
JP4246804B2 (ja) 1997-03-26 2009-04-02 株式会社神戸製鋼所 加熱・加圧処理装置
JPH10288158A (ja) 1997-04-10 1998-10-27 Kobe Steel Ltd ピストン式ガス圧縮機及びガス圧縮設備
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
JP3764247B2 (ja) 1997-05-27 2006-04-05 株式会社神戸製鋼所 板状物の加圧処理装置
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6114044A (en) 1997-05-30 2000-09-05 Regents Of The University Of California Method of drying passivated micromachines by dewetting from a liquid-based process
US6344243B1 (en) 1997-05-30 2002-02-05 Micell Technologies, Inc. Surface treatment
US6164297A (en) 1997-06-13 2000-12-26 Tokyo Electron Limited Cleaning and drying apparatus for objects to be processed
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
TW524873B (en) 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
US5893756A (en) 1997-08-26 1999-04-13 Lsi Logic Corporation Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing
US6270531B1 (en) 1997-08-29 2001-08-07 Micell Technologies, Inc. End functionalized polysiloxane surfactants in carbon dioxide formulations
JP3194036B2 (ja) 1997-09-17 2001-07-30 東京エレクトロン株式会社 乾燥処理装置及び乾燥処理方法
US6056008A (en) 1997-09-22 2000-05-02 Fisher Controls International, Inc. Intelligent pressure regulator
US6235634B1 (en) 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US6099619A (en) 1997-10-09 2000-08-08 Uop Llc Purification of carbon dioxide
US5872061A (en) 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6005226A (en) 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE69839935D1 (de) 1997-11-25 2008-10-09 Nec Lcd Technologies Ltd Aktiv-Matrix-Flüssigkristallanzeige und deren Herstellungsverfahren
US5904737A (en) 1997-11-26 1999-05-18 Mve, Inc. Carbon dioxide dry cleaning system
JPH11200035A (ja) 1998-01-19 1999-07-27 Anelva Corp スパッタ化学蒸着複合装置
US5934991A (en) 1998-02-01 1999-08-10 Fortrend Engineering Corporation Pod loader interface improved clean air system
US6067728A (en) 1998-02-13 2000-05-30 G.T. Equipment Technologies, Inc. Supercritical phase wafer drying/cleaning system
US6100198A (en) 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
US6122566A (en) 1998-03-03 2000-09-19 Applied Materials Inc. Method and apparatus for sequencing wafers in a multiple chamber, semiconductor wafer processing system
US6244121B1 (en) 1998-03-06 2001-06-12 Applied Materials, Inc. Sensor device for non-intrusive diagnosis of a semiconductor processing system
KR100287173B1 (ko) 1998-03-13 2001-06-01 윤종용 포토레지스트제거방법및이들을이용한반도체장치의제조방법
US6453924B1 (en) 2000-07-24 2002-09-24 Advanced Technology Materials, Inc. Fluid distribution system and process, and semiconductor fabrication facility utilizing same
US6846789B2 (en) * 1998-03-30 2005-01-25 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
WO1999049998A1 (en) 1998-03-30 1999-10-07 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
KR100452542B1 (ko) 1998-04-14 2004-10-12 가부시끼가이샤가이죠 세정물 건조장치 및 건조방법
ATE436043T1 (de) 1998-05-18 2009-07-15 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
US6200943B1 (en) 1998-05-28 2001-03-13 Micell Technologies, Inc. Combination surfactant systems for use in carbon dioxide-based cleaning formulations
US6021791A (en) 1998-06-29 2000-02-08 Speedfam-Ipec Corporation Method and apparatus for immersion cleaning of semiconductor devices
US6017820A (en) 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6085935A (en) 1998-08-10 2000-07-11 Alliance Laundry Systems Llc Pressure vessel door operating apparatus
JP3248492B2 (ja) 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
US6780765B2 (en) 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6358673B1 (en) 1998-09-09 2002-03-19 Nippon Telegraph And Telephone Corporation Pattern formation method and apparatus
US6492277B1 (en) 1999-09-10 2002-12-10 Hitachi, Ltd. Specimen surface processing method and apparatus
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
JP2000106358A (ja) 1998-09-29 2000-04-11 Mitsubishi Electric Corp 半導体製造装置および半導体基板の処理方法
US6110232A (en) 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
US6449428B2 (en) 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
DE19860084B4 (de) 1998-12-23 2005-12-22 Infineon Technologies Ag Verfahren zum Strukturieren eines Substrats
US6344174B1 (en) 1999-01-25 2002-02-05 Mine Safety Appliances Company Gas sensor
EP1024524A2 (en) 1999-01-27 2000-08-02 Matsushita Electric Industrial Co., Ltd. Deposition of dielectric layers using supercritical CO2
US6232238B1 (en) 1999-02-08 2001-05-15 United Microelectronics Corp. Method for preventing corrosion of bonding pad on a surface of a semiconductor wafer
US6305677B1 (en) 1999-03-30 2001-10-23 Lam Research Corporation Perimeter wafer lifting
US6241825B1 (en) 1999-04-16 2001-06-05 Cutek Research Inc. Compliant wafer chuck
KR100421034B1 (ko) 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법
KR100290852B1 (ko) 1999-04-29 2001-05-15 구자홍 에칭 방법
US6128830A (en) 1999-05-15 2000-10-10 Dean Bettcher Apparatus and method for drying solid articles
US6245849B1 (en) 1999-06-02 2001-06-12 Sandia Corporation Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles
US6436824B1 (en) 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene
US6508259B1 (en) 1999-08-05 2003-01-21 S.C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6334266B1 (en) 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
AU6893600A (en) 1999-08-05 2001-03-05 S. C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6251250B1 (en) 1999-09-03 2001-06-26 Arthur Keigler Method of and apparatus for controlling fluid flow and electric fields involved in the electroplating of substantially flat workpieces and the like and more generally controlling fluid flow in the processing of other work piece surfaces as well
US6228563B1 (en) 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6355072B1 (en) 1999-10-15 2002-03-12 R.R. Street & Co. Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
CA2387341A1 (en) 1999-11-02 2001-05-10 Tokyo Electron Limited Method and apparatus for supercritical processing of multiple workpieces
US6286231B1 (en) 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US6361696B1 (en) 2000-01-19 2002-03-26 Aeronex, Inc. Self-regenerative process for contaminant removal from liquid and supercritical CO2 fluid streams
WO2001055628A1 (en) 2000-01-26 2001-08-02 Tokyo Electron Limited High pressure lift valve for use in semiconductor processing environment
WO2001068279A2 (en) 2000-03-13 2001-09-20 The Deflex Llc Dense fluid cleaning centrifugal phase shifting separation process and apparatus
WO2001074538A1 (en) 2000-03-13 2001-10-11 The Deflex Llc Dense fluid spray cleaning process and apparatus
JP2001291713A (ja) 2000-04-07 2001-10-19 Canon Sales Co Inc 成膜方法及び半導体装置
US6558475B1 (en) 2000-04-10 2003-05-06 International Business Machines Corporation Process for cleaning a workpiece using supercritical carbon dioxide
EP1425115A4 (en) 2000-04-18 2006-03-01 S C Fluids Inc SUPERCRITICAL FLUID DELIVERY AND RECOVERY SYSTEM FOR PROCESSING SEMICONDUCTOR WAFERS
AU2001255656A1 (en) 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6492090B2 (en) 2000-04-28 2002-12-10 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
AU2001257564A1 (en) 2000-05-08 2001-11-20 Tokyo Electron Limited Method and apparatus for agitation of workpiece in high pressure environment
WO2001094782A2 (en) 2000-06-02 2001-12-13 Tokyo Electron Limited Dual diaphragm pump
US6319858B1 (en) 2000-07-11 2001-11-20 Nano-Architect Research Corporation Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film
JP4724353B2 (ja) 2000-07-26 2011-07-13 東京エレクトロン株式会社 半導体基板のための高圧処理チャンバー
AU2001279136A1 (en) 2000-07-31 2002-02-13 The Deflex Corporation Near critical and supercritical ozone substrate treatment and apparatus for same
WO2002009894A2 (en) 2000-08-01 2002-02-07 The Deflex Llc Gas-vapor cleaning method and system therefor
JP3591827B2 (ja) * 2000-08-11 2004-11-24 株式会社東芝 微細構造を有する成形体の製造方法
AU2000266442A1 (en) 2000-08-14 2002-02-25 Tokyo Electron Limited Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6486078B1 (en) 2000-08-22 2002-11-26 Advanced Micro Devices, Inc. Super critical drying of low k materials
AU2001288402A1 (en) 2000-08-23 2002-03-04 Deflex Llc Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays
US6413852B1 (en) 2000-08-31 2002-07-02 International Business Machines Corporation Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
NZ524685A (en) 2000-09-07 2004-10-29 Cmb Ind Short-length reduced-pressure backflow preventor
US6388317B1 (en) 2000-09-25 2002-05-14 Lockheed Martin Corporation Solid-state chip cooling by use of microchannel coolant flow
US6777312B2 (en) 2000-11-02 2004-08-17 California Institute Of Technology Wafer-level transfer of membranes in semiconductor processing
US6623355B2 (en) 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6418956B1 (en) 2000-11-15 2002-07-16 Plast-O-Matic Valves, Inc. Pressure controller
US6673521B2 (en) 2000-12-12 2004-01-06 Lnternational Business Machines Corporation Supercritical fluid(SCF) silylation process
US6576138B2 (en) 2000-12-14 2003-06-10 Praxair Technology, Inc. Method for purifying semiconductor gases
US6656666B2 (en) 2000-12-22 2003-12-02 International Business Machines Corporation Topcoat process to prevent image collapse
US6425956B1 (en) 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US20020117391A1 (en) 2001-01-31 2002-08-29 Beam Craig A. High purity CO2 and BTEX recovery
JP2002237481A (ja) 2001-02-09 2002-08-23 Kobe Steel Ltd 微細構造体の洗浄方法
US6669916B2 (en) 2001-02-12 2003-12-30 Praxair Technology, Inc. Method and apparatus for purifying carbon dioxide feed streams
US6596093B2 (en) 2001-02-15 2003-07-22 Micell Technologies, Inc. Methods for cleaning microelectronic structures with cyclical phase modulation
US6613157B2 (en) 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6905555B2 (en) 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
US6641678B2 (en) 2001-02-15 2003-11-04 Micell Technologies, Inc. Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
US6562146B1 (en) 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
US6635565B2 (en) 2001-02-20 2003-10-21 United Microelectronics Corp. Method of cleaning a dual damascene structure
US6451510B1 (en) 2001-02-21 2002-09-17 International Business Machines Corporation Developer/rinse formulation to prevent image collapse in resist
US6685903B2 (en) 2001-03-01 2004-02-03 Praxair Technology, Inc. Method of purifying and recycling argon
US6503837B2 (en) 2001-03-29 2003-01-07 Macronix International Co. Ltd. Method of rinsing residual etching reactants/products on a semiconductor wafer
US20030116176A1 (en) * 2001-04-18 2003-06-26 Rothman Laura B. Supercritical fluid processes with megasonics
US6561220B2 (en) 2001-04-23 2003-05-13 International Business Machines, Corp. Apparatus and method for increasing throughput in fluid processing
US6958123B2 (en) 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
US6509136B1 (en) 2001-06-27 2003-01-21 International Business Machines Corporation Process of drying a cast polymeric film disposed on a workpiece
US6890855B2 (en) * 2001-06-27 2005-05-10 International Business Machines Corporation Process of removing residue material from a precision surface
US6583067B2 (en) 2001-07-03 2003-06-24 United Microelectronics Corp. Method of avoiding dielectric layer deterioration with a low dielectric constant
US6979654B2 (en) 2001-07-03 2005-12-27 United Microelectronics Corp. Method of avoiding dielectric layer deterioation with a low dielectric constant during a stripping process
US6564826B2 (en) 2001-07-24 2003-05-20 Der-Fan Shen Flow regulator for water pump
US6561767B2 (en) 2001-08-01 2003-05-13 Berger Instruments, Inc. Converting a pump for use in supercritical fluid chromatography
US6561481B1 (en) 2001-08-13 2003-05-13 Filonczuk Michael A Fluid flow control apparatus for controlling and delivering fluid at a continuously variable flow rate
US6748966B1 (en) 2001-09-04 2004-06-15 Steven G. Dvorak Combination air gap for dish washer and soap dispenser
US20040040660A1 (en) 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
JP3978023B2 (ja) 2001-12-03 2007-09-19 株式会社神戸製鋼所 高圧処理方法
US6550484B1 (en) 2001-12-07 2003-04-22 Novellus Systems, Inc. Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US20040003828A1 (en) * 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
US6521466B1 (en) 2002-04-17 2003-02-18 Paul Castrucci Apparatus and method for semiconductor wafer test yield enhancement
US20030196679A1 (en) 2002-04-18 2003-10-23 International Business Machines Corporation Process and apparatus for contacting a precision surface with liquid or supercritical carbon dioxide
US6764552B1 (en) 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
TW200417628A (en) * 2002-09-09 2004-09-16 Shipley Co Llc Improved cleaning composition
US20040055621A1 (en) * 2002-09-24 2004-03-25 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids and ultrasonic energy
US6953041B2 (en) * 2002-10-09 2005-10-11 Micell Technologies, Inc. Compositions of transition metal species in dense phase carbon dioxide and methods of use thereof
JP2004141704A (ja) * 2002-10-22 2004-05-20 Sony Corp 洗浄装置および洗浄方法
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US20040177867A1 (en) 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040112409A1 (en) 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
KR20060014388A (ko) * 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 반도체 공정에서의 에칭후 잔류물의 제거 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030045117A1 (en) * 2001-09-04 2003-03-06 International Business Machines Corporation Liquid or supercritical carbon dioxide composition and process of removing residue from a precision surface using same
US20040112402A1 (en) * 2002-12-13 2004-06-17 Simons John P. Apparatus and method for rapid thermal control of a workpiece in liquid or dense phase fluid
US20040171502A1 (en) * 2003-02-28 2004-09-02 Clark Shan C. Cleaning residues from semiconductor structures
US20040266635A1 (en) * 2003-06-24 2004-12-30 Korzenski Michael B. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050006310A1 (en) * 2003-07-10 2005-01-13 Rajat Agrawal Purification and recovery of fluids in processing applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515178B2 (en) 2020-03-16 2022-11-29 Tokyo Electron Limited System and methods for wafer drying
US12002687B2 (en) 2020-03-16 2024-06-04 Tokyo Electron Limited System and methods for wafer drying

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