JP2007266609A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007266609A5 JP2007266609A5 JP2007084907A JP2007084907A JP2007266609A5 JP 2007266609 A5 JP2007266609 A5 JP 2007266609A5 JP 2007084907 A JP2007084907 A JP 2007084907A JP 2007084907 A JP2007084907 A JP 2007084907A JP 2007266609 A5 JP2007266609 A5 JP 2007266609A5
- Authority
- JP
- Japan
- Prior art keywords
- introducing
- process gas
- substrate
- gas
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 35
- 239000007789 gas Substances 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 10
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000010494 dissociation reaction Methods 0.000 claims 1
- 230000005593 dissociations Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/390,192 US7759249B2 (en) | 2006-03-28 | 2006-03-28 | Method of removing residue from a substrate |
| US11/390,192 | 2006-03-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007266609A JP2007266609A (ja) | 2007-10-11 |
| JP2007266609A5 true JP2007266609A5 (enExample) | 2010-04-22 |
| JP4943912B2 JP4943912B2 (ja) | 2012-05-30 |
Family
ID=38559676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007084907A Expired - Fee Related JP4943912B2 (ja) | 2006-03-28 | 2007-03-28 | 基板から残渣を除去する方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7759249B2 (enExample) |
| JP (1) | JP4943912B2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8057633B2 (en) * | 2006-03-28 | 2011-11-15 | Tokyo Electron Limited | Post-etch treatment system for removing residue on a substrate |
| US8715455B2 (en) * | 2007-02-06 | 2014-05-06 | Tokyo Electron Limited | Multi-zone gas distribution system for a treatment system |
| JP5518071B2 (ja) * | 2008-08-19 | 2014-06-11 | ラム リサーチ コーポレーション | 静電チャック用エッジリング |
| US20100130017A1 (en) * | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
| US20120024314A1 (en) * | 2010-07-27 | 2012-02-02 | Axcelis Technologies, Inc. | Plasma mediated ashing processes |
| US8562742B2 (en) | 2010-04-30 | 2013-10-22 | Applied Materials, Inc. | Apparatus for radial delivery of gas to a chamber and methods of use thereof |
| WO2012081287A1 (ja) * | 2010-12-14 | 2012-06-21 | エドワーズ株式会社 | 排気ポンプに適用可能な固定翼ブレード集合体、及びそれを備えた排気ポンプ |
| JP5698558B2 (ja) * | 2011-02-21 | 2015-04-08 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
| KR102036904B1 (ko) * | 2012-11-16 | 2019-10-25 | 엘지디스플레이 주식회사 | 액정표시 장치용 어레이 기판의 제조 방법 |
| WO2015098183A1 (ja) * | 2013-12-26 | 2015-07-02 | シャープ株式会社 | アクティブマトリクス基板の製造方法および表示装置の製造方法ならびに表示装置 |
| JP2017143085A (ja) * | 2014-06-23 | 2017-08-17 | 東京エレクトロン株式会社 | グラフェン膜を有する被処理体を処理する方法 |
| US10192717B2 (en) | 2014-07-21 | 2019-01-29 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| KR102496037B1 (ko) | 2016-01-20 | 2023-02-06 | 삼성전자주식회사 | 플라즈마 식각 방법 및 장치 |
| KR102614944B1 (ko) * | 2018-09-26 | 2023-12-19 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법, 에칭 잔사의 제거 방법, 및 기억 매체 |
| JP7287767B2 (ja) * | 2018-09-26 | 2023-06-06 | 株式会社アルバック | ドライエッチング方法 |
| US12261054B2 (en) | 2022-08-11 | 2025-03-25 | Tokyo Electron Limited | Substrate processing with material modification and removal |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104224A (ja) * | 1992-09-22 | 1994-04-15 | Sumitomo Metal Ind Ltd | レジスト除去装置及びその使用方法 |
| US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
| US6468490B1 (en) * | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
| US6825126B2 (en) * | 2002-04-25 | 2004-11-30 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
| US20040086434A1 (en) * | 2002-11-04 | 2004-05-06 | Gadgil Pradad N. | Apparatus and method for treating objects with radicals generated from plasma |
| US20070051471A1 (en) * | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
| US20040154743A1 (en) * | 2002-11-29 | 2004-08-12 | Savas Stephen E. | Apparatus and method for low temperature stripping of photoresist and residues |
| US7371688B2 (en) * | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
| JP4299638B2 (ja) * | 2003-10-31 | 2009-07-22 | キヤノン株式会社 | 基板処理装置および基板処理方法 |
| US20060017043A1 (en) * | 2004-07-23 | 2006-01-26 | Dingjun Wu | Method for enhancing fluorine utilization |
| KR100550351B1 (ko) * | 2004-09-07 | 2006-02-08 | 삼성전자주식회사 | 반도체 장치의 막 형성방법 및 이를 수행하기 위한 반도체장치의 막 형성 장치 |
| US20070218200A1 (en) * | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
-
2006
- 2006-03-28 US US11/390,192 patent/US7759249B2/en not_active Expired - Fee Related
-
2007
- 2007-03-28 JP JP2007084907A patent/JP4943912B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007266609A5 (enExample) | ||
| JP7751558B2 (ja) | 半導体処理装置 | |
| JP2007084908A5 (enExample) | ||
| TW554418B (en) | Method and device for cleaning chemical vapor deposition apparatus | |
| TWI738895B (zh) | 防止氟化鋁積聚於加熱器上的技術 | |
| JP6463339B2 (ja) | 後続の多段洗浄ステップを伴うｍｏｃｖｄ層成長方法 | |
| JP2009531857A5 (enExample) | ||
| WO2009008376A1 (ja) | 半導体装置の製造方法、半導体装置、半導体製造装置、および、記憶媒体 | |
| US20080314418A1 (en) | Method and System for Furnace Cleaning | |
| TW200736412A (en) | Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers | |
| JP2009111382A5 (enExample) | ||
| TW201537638A (zh) | 積體電路的製造方法 | |
| JP2019055887A5 (enExample) | ||
| TW200618104A (en) | Post-etch treatment to remove residues | |
| JP2018503259A5 (enExample) | ||
| JP2009503889A5 (enExample) | ||
| JP2008507130A5 (enExample) | ||
| WO2012018375A3 (en) | Plasma mediated ashing processes | |
| JP2015138913A5 (enExample) | ||
| TW201521091A (zh) | 對氧化物－矽堆疊的黏附性改良 | |
| TW200625442A (en) | Process for cleaning semiconductor treating apparatus and process for etching silicon substrate | |
| US20170263436A1 (en) | Systems and methodologies for vapor phase hydroxyl radical processing of substrates | |
| JP2004343094A5 (enExample) | ||
| JP2007115797A5 (enExample) | ||
| PH12012500396A1 (en) | Method for cleaning the surface of a silicon substrate |