JP2009533853A5 - - Google Patents

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Publication number
JP2009533853A5
JP2009533853A5 JP2009504707A JP2009504707A JP2009533853A5 JP 2009533853 A5 JP2009533853 A5 JP 2009533853A5 JP 2009504707 A JP2009504707 A JP 2009504707A JP 2009504707 A JP2009504707 A JP 2009504707A JP 2009533853 A5 JP2009533853 A5 JP 2009533853A5
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JP
Japan
Prior art keywords
fluorine
nitrogen
gas mixture
argon
mixture
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Granted
Application number
JP2009504707A
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English (en)
Japanese (ja)
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JP5491170B2 (ja
JP2009533853A (ja
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Priority claimed from PCT/EP2007/053421 external-priority patent/WO2007116033A1/en
Publication of JP2009533853A publication Critical patent/JP2009533853A/ja
Publication of JP2009533853A5 publication Critical patent/JP2009533853A5/ja
Application granted granted Critical
Publication of JP5491170B2 publication Critical patent/JP5491170B2/ja
Active legal-status Critical Current
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JP2009504707A 2006-04-10 2007-04-06 エッチング方法 Active JP5491170B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP06007540 2006-04-10
EP06007540.5 2006-04-10
EP06008238.5 2006-04-21
EP06008238 2006-04-21
PCT/EP2007/053421 WO2007116033A1 (en) 2006-04-10 2007-04-06 Etching process

Publications (3)

Publication Number Publication Date
JP2009533853A JP2009533853A (ja) 2009-09-17
JP2009533853A5 true JP2009533853A5 (enExample) 2010-05-20
JP5491170B2 JP5491170B2 (ja) 2014-05-14

Family

ID=38164383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009504707A Active JP5491170B2 (ja) 2006-04-10 2007-04-06 エッチング方法

Country Status (6)

Country Link
US (1) US20090068844A1 (enExample)
EP (2) EP3269843A1 (enExample)
JP (1) JP5491170B2 (enExample)
KR (3) KR20160062181A (enExample)
TW (1) TW200809008A (enExample)
WO (1) WO2007116033A1 (enExample)

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RU2010130570A (ru) * 2007-12-21 2012-01-27 Солвей Флуор Гмбх (De) Способ получения микроэлектромеханических систем
AU2008348838A1 (en) 2008-01-23 2009-07-30 Solvay Fluor Gmbh Process for the manufacture of solar cells
WO2010087930A1 (en) * 2009-01-27 2010-08-05 Linde Aktiengesellschaft Molecular fluorine etching of silicon thin films for photovoltaic and other lower-temperature chemical vapor deposition processes
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
WO2011051251A1 (en) * 2009-10-26 2011-05-05 Solvay Fluor Gmbh Etching process for producing a tft matrix
JP2013509700A (ja) 2009-10-30 2013-03-14 ソルヴェイ（ソシエテ アノニム） Ｆ２およびｃｏｆ２を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法
MY162759A (en) 2010-03-26 2017-07-14 Solvay Method for the supply of fluorine
GB2486883A (en) * 2010-12-22 2012-07-04 Ultra High Vacuum Solutions Ltd Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices
CN103079992A (zh) 2010-08-05 2013-05-01 索尔维公司 氟纯化的方法
TWI586842B (zh) 2010-09-15 2017-06-11 首威公司 氟之製造工廠及使用彼之方法
WO2012035000A1 (en) 2010-09-15 2012-03-22 Solvay Sa Method for the removal of f2 and/or of2 from a gas
US20130017644A1 (en) * 2011-02-18 2013-01-17 Air Products And Chemicals, Inc. Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup
JP2012216718A (ja) * 2011-04-01 2012-11-08 Kaneka Corp Ｃｖｄ装置のクリーニング方法
WO2013024041A1 (en) 2011-08-17 2013-02-21 Solvay Sa Electrolytic process for the manufacture of fluorine and an apparatus therefor
WO2013092777A1 (en) 2011-12-22 2013-06-27 Solvay Sa Plasma chamber apparatus and a method for cleaning a chamber
KR102030797B1 (ko) 2012-03-30 2019-11-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
JP6138653B2 (ja) * 2013-10-08 2017-05-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
EP2860287A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2860288A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2944385A1 (en) 2014-05-12 2015-11-18 Solvay SA A process for etching and chamber cleaning and a gas therefor
EP3095893A1 (en) * 2015-05-22 2016-11-23 Solvay SA A process for etching and chamber cleaning and a gas therefor
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
WO2021210368A1 (ja) 2020-04-14 2021-10-21 昭和電工株式会社 エッチング方法及び半導体素子の製造方法
US11961719B2 (en) 2020-06-25 2024-04-16 Hitachi High-Tech Corporation Vacuum processing method
CN114823350A (zh) * 2022-04-17 2022-07-29 中南大学 一种铌酸锂薄膜刻蚀方法

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JP2626913B2 (ja) * 1988-07-29 1997-07-02 三菱電機株式会社 シリコン表面の処理方法
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