JP6781716B2 - エッチング及びチャンバクリーニングのための方法及びそのためのガス - Google Patents
エッチング及びチャンバクリーニングのための方法及びそのためのガス Download PDFInfo
- Publication number
- JP6781716B2 JP6781716B2 JP2017560775A JP2017560775A JP6781716B2 JP 6781716 B2 JP6781716 B2 JP 6781716B2 JP 2017560775 A JP2017560775 A JP 2017560775A JP 2017560775 A JP2017560775 A JP 2017560775A JP 6781716 B2 JP6781716 B2 JP 6781716B2
- Authority
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- Prior art keywords
- gas mixture
- fluorine
- argon
- nitrogen
- approximately
- Prior art date
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- 239000007789 gas Substances 0.000 title claims description 78
- 238000005530 etching Methods 0.000 title claims description 36
- 238000004140 cleaning Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 33
- 239000000203 mixture Substances 0.000 claims description 71
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 70
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 60
- 229910052786 argon Inorganic materials 0.000 claims description 35
- 239000011737 fluorine Substances 0.000 claims description 34
- 229910052731 fluorine Inorganic materials 0.000 claims description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 14
- 125000001153 fluoro group Chemical group F* 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 238000006467 substitution reaction Methods 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 20
- 210000002381 plasma Anatomy 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- -1 photoelectrics Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Epidemiology (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Metallurgy (AREA)
- Public Health (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
エッチング速度は、試料に向けられた645nmのレーザを使用して反射率測定によってその場で決定した。エッチング速度は、除去終点が検出されるときの時間で膜の厚さを除すことによって計算した。
2.試料
試料のサイズは、200mmウェーハであった。調査材料を、150nmの熱SiO2層上に堆積させて、干渉法測定を可能にした。SiO2試料は、それらの光学特性が干渉法測定を可能にするので、バルクシリコン上に堆積させた。
3.Alta−CVDでのチャンバクリーニング実験
実験は、「Brooks VX400」ローダを有する2チャンバシステムのAltaCVD Toolで行なった。チャンバPM2を、ドープト/非ドープトpoly−Si膜のために使用した。ヒータ温度は、400℃に設定し、壁温度は、55℃に設定した。
1〜2μmの厚さのPETEOS−膜を、200mmのSi−基板上に堆積させ、厚さを、分光計(OMT)/エリプソメータ(tencor UV1280SE)、49点、10mm端部除外によって測定した。ウェーハをチャンバ中に装着した。SiO2−エッチング速度は、エッチング後のTEOS膜厚を測定した後に計算した。
3つの異なるクリーニング方法を、以下の表に示されるとおりの異なるNF3/Ar混合物で行なった。他のパラメータはすべて、実験1で言及されたものと同一であった。
Claims (13)
- 100%(v/v)としてのフッ素、アルゴン、窒素及び任意選択的な他の成分の合計組成に対して、27.5%(v/v)以上〜32.5%(v/v)以下の範囲のフッ素、25%(v/v)以上〜45%(v/v)以下の範囲の窒素及び25%(v/v)以上〜45%(v/v)以下の範囲のアルゴンを含む又はそれらからなるガス混合物がエッチングガスとして使用される、半導体製造用の装置の処理チャンバをクリーニングするための方法。
- 前記ガス混合物が、およそ30%(v/v)のフッ素、およそ30%(v/v)の窒素及びおよそ40%(v/v)のアルゴンからなる、請求項1に記載の方法。
- 前記ガス混合物が、およそ30%(v/v)のフッ素、およそ45%(v/v)の窒素及びおよそ25%(v/v)のアルゴンからなる、請求項1に記載の方法。
- 前記ガス混合物が、主チャンバクリーニング工程で使用される、請求項1〜3のいずれか一項に記載の方法。
- 前記チャンバ内の圧力が、1〜3.5トールの範囲である、請求項1〜4のいずれか一項に記載の方法。
- 前記方法が、100KHz〜1GHzの周波数を有するリモートプラズマ源を使用してプラズマ支援される、請求項1〜5のいずれか一項に記載の方法。
- 前記装置が、エッチングガスとしてのNF3の使用のために最適化される、請求項1〜6のいずれか一項に記載の方法。
- 非晶質Si、Si3N4、SiOxNy(ここで、0<x≦3及び0≦y≦4である)、SiO2、TaN、TiN又はWからなる群から選択される無機物質が、エッチングガスでエッチングすることによって除去される、請求項1〜7のいずれか一項に記載の方法。
- 100%(v/v)としてのフッ素、アルゴン、窒素及び任意選択的な他の成分の合計組成に対して、27.5%(v/v)以上〜32.5%(v/v)以下の範囲のフッ素、25%(v/v)以上〜45%(v/v)以下の範囲の窒素及び25%(v/v)以上〜45%(v/v)以下のアルゴンを含む又はそれらからなる、ガス混合物。
- 前記ガス混合物が、およそ30%(v/v)のフッ素、およそ30%(v/v)の窒素及びおよそ40%(v/v)のアルゴンからなる、請求項9に記載のガス混合物。
- 前記ガス混合物が、およそ30%(v/v)のフッ素、およそ45%(v/v)の窒素及びおよそ25%(v/v)のアルゴンからなる、請求項9に記載のガス混合物。
- 半導体製造用の装置のチャンバのクリーニングのためのエッチングガスとしての、請求項9〜11のいずれか一項に記載のガス混合物の使用。
- 前記ガス混合物が、エッチングガスとしてNF3の代わりのドロップイン置換として使用される、請求項12に記載の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15168904.9A EP3095893A1 (en) | 2015-05-22 | 2015-05-22 | A process for etching and chamber cleaning and a gas therefor |
EP15168904.9 | 2015-05-22 | ||
PCT/EP2016/060021 WO2016188718A1 (en) | 2015-05-22 | 2016-05-04 | A process for etching, and chamber cleaning and a gas therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018525810A JP2018525810A (ja) | 2018-09-06 |
JP6781716B2 true JP6781716B2 (ja) | 2020-11-04 |
Family
ID=53191553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017560775A Active JP6781716B2 (ja) | 2015-05-22 | 2016-05-04 | エッチング及びチャンバクリーニングのための方法及びそのためのガス |
Country Status (10)
Country | Link |
---|---|
US (1) | US11149347B2 (ja) |
EP (3) | EP3095893A1 (ja) |
JP (1) | JP6781716B2 (ja) |
KR (2) | KR20240042135A (ja) |
CN (1) | CN107810289B (ja) |
DE (1) | DE202016008727U1 (ja) |
IL (1) | IL255501B (ja) |
SG (1) | SG10201907760VA (ja) |
TW (1) | TWI718148B (ja) |
WO (1) | WO2016188718A1 (ja) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100767762B1 (ko) * | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
JP2003158123A (ja) * | 2001-08-30 | 2003-05-30 | Research Institute Of Innovative Technology For The Earth | プラズマクリーニングガス及びプラズマクリーニング方法 |
JP4320389B2 (ja) * | 2003-02-28 | 2009-08-26 | 関東電化工業株式会社 | Cvdチャンバーのクリーニング方法およびそれに用いるクリーニングガス |
CN101278072A (zh) * | 2005-08-02 | 2008-10-01 | 麻省理工学院 | 使用nf3除去表面沉积物的方法 |
JP5491170B2 (ja) * | 2006-04-10 | 2014-05-14 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング | エッチング方法 |
CN101466873B (zh) * | 2006-04-10 | 2012-09-26 | 苏威氟有限公司 | 蚀刻方法 |
CN100537836C (zh) * | 2006-09-04 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | 化学气相沉积室的清洁方法 |
EP2196464A1 (en) | 2008-12-15 | 2010-06-16 | Solvay Fluor GmbH | Container containing fluorinated organic carbonates |
JP2012026020A (ja) * | 2010-07-28 | 2012-02-09 | Central Glass Co Ltd | 平行平板電極のプラズマクリーニング方法 |
JP5933375B2 (ja) * | 2011-09-14 | 2016-06-08 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
WO2013092770A1 (en) | 2011-12-22 | 2013-06-27 | Solvay Sa | Method for removing deposits performed with varying parameters |
KR20150053782A (ko) | 2012-09-10 | 2015-05-18 | 솔베이(소시에떼아노님) | F2를 사용한 챔버 세정 방법 및 상기 방법을 위한 f2의 제조 공정 |
JP6242095B2 (ja) * | 2013-06-28 | 2017-12-06 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
EP2944385A1 (en) | 2014-05-12 | 2015-11-18 | Solvay SA | A process for etching and chamber cleaning and a gas therefor |
-
2015
- 2015-05-22 EP EP15168904.9A patent/EP3095893A1/en not_active Ceased
-
2016
- 2016-05-04 KR KR1020247008861A patent/KR20240042135A/ko not_active Application Discontinuation
- 2016-05-04 KR KR1020177035563A patent/KR20180011138A/ko not_active IP Right Cessation
- 2016-05-04 CN CN201680029790.3A patent/CN107810289B/zh active Active
- 2016-05-04 WO PCT/EP2016/060021 patent/WO2016188718A1/en active Application Filing
- 2016-05-04 JP JP2017560775A patent/JP6781716B2/ja active Active
- 2016-05-04 DE DE202016008727.5U patent/DE202016008727U1/de active Active
- 2016-05-04 US US15/575,450 patent/US11149347B2/en active Active
- 2016-05-04 EP EP19156300.6A patent/EP3517650B1/en active Active
- 2016-05-04 EP EP16721153.1A patent/EP3298178B1/en active Active
- 2016-05-04 SG SG10201907760V patent/SG10201907760VA/en unknown
- 2016-05-11 TW TW105114575A patent/TWI718148B/zh active
-
2017
- 2017-11-07 IL IL255501A patent/IL255501B/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP3298178A1 (en) | 2018-03-28 |
IL255501A (en) | 2018-01-31 |
CN107810289B (zh) | 2021-02-02 |
JP2018525810A (ja) | 2018-09-06 |
WO2016188718A1 (en) | 2016-12-01 |
EP3517650A1 (en) | 2019-07-31 |
US20180163300A1 (en) | 2018-06-14 |
KR20240042135A (ko) | 2024-04-01 |
DE202016008727U1 (de) | 2019-03-27 |
CN107810289A (zh) | 2018-03-16 |
EP3095893A1 (en) | 2016-11-23 |
EP3298178B1 (en) | 2019-07-24 |
KR20180011138A (ko) | 2018-01-31 |
SG10201907760VA (en) | 2019-10-30 |
TW201704531A (zh) | 2017-02-01 |
US11149347B2 (en) | 2021-10-19 |
IL255501B (en) | 2021-09-30 |
EP3517650B1 (en) | 2021-12-29 |
TWI718148B (zh) | 2021-02-11 |
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