WO2007027350A3 - Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber - Google Patents

Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber Download PDF

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Publication number
WO2007027350A3
WO2007027350A3 PCT/US2006/030032 US2006030032W WO2007027350A3 WO 2007027350 A3 WO2007027350 A3 WO 2007027350A3 US 2006030032 W US2006030032 W US 2006030032W WO 2007027350 A3 WO2007027350 A3 WO 2007027350A3
Authority
WO
WIPO (PCT)
Prior art keywords
interior
chamber
deposits
surface deposits
passivating
Prior art date
Application number
PCT/US2006/030032
Other languages
French (fr)
Other versions
WO2007027350A2 (en
Inventor
Herbert H Sawin
Bo Bai
Ju Jin An
Original Assignee
Du Pont
Massachusetts Inst Technology
Herbert H Sawin
Bo Bai
Ju Jin An
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Massachusetts Inst Technology, Herbert H Sawin, Bo Bai, Ju Jin An filed Critical Du Pont
Priority to JP2008525139A priority Critical patent/JP2009503905A/en
Publication of WO2007027350A2 publication Critical patent/WO2007027350A2/en
Publication of WO2007027350A3 publication Critical patent/WO2007027350A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Abstract

The present invention relates to plasma cleaning methods for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The present invention also provides gas mixtures and activated gas mixtures which provide superior performance in removing deposits from a surface. The methods involve activating a gas mixture comprising a carbon or sulfur source, NF3, and optionally, an oxygen source to form an activated gas, and contacting the activated gas mixture with surface deposits to remove the surface deposits wherein the activated gas mixture acts to passivate the interior surfaces of the apparatus to reduce the rate of surface recombination of gas phase species.
PCT/US2006/030032 2005-08-02 2006-08-02 Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber WO2007027350A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008525139A JP2009503905A (en) 2005-08-02 2006-08-02 Method for removing surface deposits and passivating internal surfaces inside chemical vapor deposition (CVD) chambers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70484005P 2005-08-02 2005-08-02
US60/704,840 2005-08-02
US77947006P 2006-03-06 2006-03-06
US60/779,470 2006-03-06

Publications (2)

Publication Number Publication Date
WO2007027350A2 WO2007027350A2 (en) 2007-03-08
WO2007027350A3 true WO2007027350A3 (en) 2007-05-03

Family

ID=37698316

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/030032 WO2007027350A2 (en) 2005-08-02 2006-08-02 Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber

Country Status (5)

Country Link
JP (1) JP2009503905A (en)
KR (1) KR20080050403A (en)
RU (1) RU2008108013A (en)
TW (1) TW200711757A (en)
WO (1) WO2007027350A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070107750A1 (en) * 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
US20070207275A1 (en) * 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
WO2008039465A2 (en) * 2006-09-25 2008-04-03 E. I. Du Pont De Nemours And Company Method for removing surface deposits in the interior of a chemical vapor deposition reactor
CN102089848B (en) * 2008-07-09 2013-05-22 欧瑞康太阳能股份公司(特吕巴赫) Remote plasma cleaning method and apparatus for applying said method
KR101630234B1 (en) * 2009-11-17 2016-06-15 주성엔지니어링(주) Method of Cleaning Process Chamber
US20130017644A1 (en) * 2011-02-18 2013-01-17 Air Products And Chemicals, Inc. Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup
JP5710433B2 (en) * 2011-09-13 2015-04-30 株式会社東芝 Film forming apparatus cleaning method and film forming apparatus
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10773282B2 (en) 2016-03-31 2020-09-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
KR102652258B1 (en) * 2016-07-12 2024-03-28 에이비엠 주식회사 Metal component and manufacturing method thereof and process chamber having the metal component
US10211099B2 (en) * 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
TWI794238B (en) * 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber
KR101960073B1 (en) * 2017-10-27 2019-03-20 주식회사 뉴파워 프라즈마 Substrate processing system for semiconductor process
CN111448640A (en) 2017-12-07 2020-07-24 朗姆研究公司 Oxidation protection layer in room conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
WO2020131214A1 (en) * 2018-12-20 2020-06-25 Applied Materials, Inc. Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber
TW202124749A (en) * 2019-10-25 2021-07-01 美商應用材料股份有限公司 Extreme ultraviolet mask blank defect reduction methods

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
EP1118692A1 (en) * 2000-01-18 2001-07-25 Asm Japan K.K. Remote plasma apparatus
EP1127957A1 (en) * 2000-02-24 2001-08-29 Asm Japan K.K. A film forming apparatus having cleaning function
US20040016441A1 (en) * 2001-08-30 2004-01-29 Akira Sekiya Plasma cleaning gas and plasma cleaning method
US20050178333A1 (en) * 2004-02-18 2005-08-18 Asm Japan K.K. System and method of CVD chamber cleaning
EP1598881A2 (en) * 2004-04-29 2005-11-23 Air Products And Chemicals, Inc. Method for removing a substance from a substrate using electron attachment

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
EP1118692A1 (en) * 2000-01-18 2001-07-25 Asm Japan K.K. Remote plasma apparatus
US20020011210A1 (en) * 2000-01-18 2002-01-31 Kiyoshi Satoh Semiconductor-processing device provided with a remote plasma source for self-cleaning
EP1127957A1 (en) * 2000-02-24 2001-08-29 Asm Japan K.K. A film forming apparatus having cleaning function
US20040016441A1 (en) * 2001-08-30 2004-01-29 Akira Sekiya Plasma cleaning gas and plasma cleaning method
US20050178333A1 (en) * 2004-02-18 2005-08-18 Asm Japan K.K. System and method of CVD chamber cleaning
EP1598881A2 (en) * 2004-04-29 2005-11-23 Air Products And Chemicals, Inc. Method for removing a substance from a substrate using electron attachment

Also Published As

Publication number Publication date
JP2009503905A (en) 2009-01-29
KR20080050403A (en) 2008-06-05
TW200711757A (en) 2007-04-01
WO2007027350A2 (en) 2007-03-08
RU2008108013A (en) 2009-09-10

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