WO2005090638A3 - Remote chamber methods for removing surface deposits - Google Patents

Remote chamber methods for removing surface deposits Download PDF

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Publication number
WO2005090638A3
WO2005090638A3 PCT/US2005/010693 US2005010693W WO2005090638A3 WO 2005090638 A3 WO2005090638 A3 WO 2005090638A3 US 2005010693 W US2005010693 W US 2005010693W WO 2005090638 A3 WO2005090638 A3 WO 2005090638A3
Authority
WO
WIPO (PCT)
Prior art keywords
surface deposits
removing surface
remote chamber
pretreatment
pathway
Prior art date
Application number
PCT/US2005/010693
Other languages
French (fr)
Other versions
WO2005090638A9 (en
WO2005090638A2 (en
WO2005090638A8 (en
Inventor
Herbert Harold Sawin
Bo Bai
Original Assignee
Du Pont
Massachusetts Inst Technology
Herbert Harold Sawin
Bo Bai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Massachusetts Inst Technology, Herbert Harold Sawin, Bo Bai filed Critical Du Pont
Priority to EP05760434A priority Critical patent/EP1737998A2/en
Priority to JP2007505283A priority patent/JP2007531289A/en
Priority to BRPI0508214-5A priority patent/BRPI0508214A/en
Publication of WO2005090638A2 publication Critical patent/WO2005090638A2/en
Publication of WO2005090638A9 publication Critical patent/WO2005090638A9/en
Publication of WO2005090638A3 publication Critical patent/WO2005090638A3/en
Publication of WO2005090638A8 publication Critical patent/WO2005090638A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Abstract

The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves addition of a nitrogen source to the feeding gas mixture comprising of oxygen and fluorocarbon. The improvement also involves pretreatment of interior surface of the pathway from the remote chamber to the surface deposits by activating a pretreatment gas mixture comprising of nitrogen source and passing the activated pretreatment gas through the pathway.
PCT/US2005/010693 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits WO2005090638A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05760434A EP1737998A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits
JP2007505283A JP2007531289A (en) 2004-03-24 2005-03-24 Remote chamber method for removing surface deposits
BRPI0508214-5A BRPI0508214A (en) 2004-03-24 2005-03-24 surface deposit removal methods

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US60/556,227 2004-03-24
US64044404P 2004-12-30 2004-12-30
US64083304P 2004-12-30 2004-12-30
US60/640,444 2004-12-30
US60/640,833 2004-12-30

Publications (4)

Publication Number Publication Date
WO2005090638A2 WO2005090638A2 (en) 2005-09-29
WO2005090638A9 WO2005090638A9 (en) 2006-01-26
WO2005090638A3 true WO2005090638A3 (en) 2006-04-13
WO2005090638A8 WO2005090638A8 (en) 2006-11-16

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2005/010693 WO2005090638A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits
PCT/US2005/010692 WO2005098086A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits
PCT/US2005/010691 WO2005095670A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits

Family Applications After (2)

Application Number Title Priority Date Filing Date
PCT/US2005/010692 WO2005098086A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits
PCT/US2005/010691 WO2005095670A2 (en) 2004-03-24 2005-03-24 Remote chamber methods for removing surface deposits

Country Status (6)

Country Link
EP (3) EP1733071A2 (en)
JP (3) JP2007530792A (en)
KR (3) KR20070043697A (en)
BR (3) BRPI0508214A (en)
TW (3) TWI281715B (en)
WO (3) WO2005090638A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
RU2008108010A (en) * 2005-08-02 2009-09-10 Массачусетс Инститьют Оф Текнолоджи (Us) METHOD OF APPLICATION OF SULFUR FLUORIDE FOR REMOVING SURFACE SEDIMENTS
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
KR101792165B1 (en) * 2012-12-18 2017-10-31 시스타 케미칼즈 인코포레이티드 Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
JP6202423B2 (en) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 Plasma cleaning method and plasma cleaning apparatus
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
EP3090073B1 (en) * 2013-12-30 2020-02-05 The Chemours Company FC, LLC Method of etching a film on a semiconductor in a semiconductor manufacturing process chamber
US20220059327A1 (en) * 2018-12-25 2022-02-24 Showa Denko K.K. Adhesion removal method and film-forming method
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1304731A1 (en) * 2001-03-22 2003-04-23 Research Institute of Innovative Technology for the Earth Method of cleaning cvd device and cleaning device therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1304731A1 (en) * 2001-03-22 2003-04-23 Research Institute of Innovative Technology for the Earth Method of cleaning cvd device and cleaning device therefor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALLGOOD C ET AL: "Evaluation of octafluorocyclobutane as a chamber clean gas in a plasma-enhanced silicon dioxide chemical vapor deposition reactor", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 150, no. 2, 2003, pages G122 - G126, XP002280013, ISSN: 0013-4651 *
CRUDEN BRETT A ET AL: "Neutral gas temperature estimate in CF4/O2/Ar inductively coupled plasmas", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 81, no. 6, 5 August 2002 (2002-08-05), pages 990 - 992, XP012033207, ISSN: 0003-6951 *
OH C H ET AL: "Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry", SURFACE & COATINGS TECHNOLOGY ELSEVIER SWITZERLAND, vol. 171, no. 1-3, 1 July 2003 (2003-07-01), pages 267 - 272, XP002362634, ISSN: 0257-8972 *

Also Published As

Publication number Publication date
WO2005095670A3 (en) 2006-05-04
KR20070037434A (en) 2007-04-04
TW200623281A (en) 2006-07-01
BRPI0508205A (en) 2007-07-17
TWI284929B (en) 2007-08-01
TW200623240A (en) 2006-07-01
WO2005090638A9 (en) 2006-01-26
KR20070043697A (en) 2007-04-25
EP1733071A2 (en) 2006-12-20
WO2005090638A2 (en) 2005-09-29
WO2005090638A8 (en) 2006-11-16
TW200623251A (en) 2006-07-01
BRPI0508204A (en) 2007-07-17
EP1737998A2 (en) 2007-01-03
JP2007531288A (en) 2007-11-01
BRPI0508214A (en) 2007-07-17
JP2007530792A (en) 2007-11-01
EP1733072A2 (en) 2006-12-20
TWI281715B (en) 2007-05-21
JP2007531289A (en) 2007-11-01
WO2005098086A3 (en) 2006-05-04
WO2005098086A2 (en) 2005-10-20
WO2005095670A2 (en) 2005-10-13
TWI281714B (en) 2007-05-21
KR20070040748A (en) 2007-04-17

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