JP5491170B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP5491170B2
JP5491170B2 JP2009504707A JP2009504707A JP5491170B2 JP 5491170 B2 JP5491170 B2 JP 5491170B2 JP 2009504707 A JP2009504707 A JP 2009504707A JP 2009504707 A JP2009504707 A JP 2009504707A JP 5491170 B2 JP5491170 B2 JP 5491170B2
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JP
Japan
Prior art keywords
fluorine
mixture
nitrogen
argon
gas
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JP2009504707A
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English (en)
Japanese (ja)
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JP2009533853A5 (enExample
JP2009533853A (ja
Inventor
アーニャ・ピシュティアック
トーマス・シュバルツェ
ミヒャエル・ピトロフ
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Solvay Fluor GmbH
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Solvay Fluor GmbH
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Publication of JP2009533853A5 publication Critical patent/JP2009533853A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/04—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by physical dissolution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2009504707A 2006-04-10 2007-04-06 エッチング方法 Active JP5491170B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP06007540 2006-04-10
EP06007540.5 2006-04-10
EP06008238.5 2006-04-21
EP06008238 2006-04-21
PCT/EP2007/053421 WO2007116033A1 (en) 2006-04-10 2007-04-06 Etching process

Publications (3)

Publication Number Publication Date
JP2009533853A JP2009533853A (ja) 2009-09-17
JP2009533853A5 JP2009533853A5 (enExample) 2010-05-20
JP5491170B2 true JP5491170B2 (ja) 2014-05-14

Family

ID=38164383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009504707A Active JP5491170B2 (ja) 2006-04-10 2007-04-06 エッチング方法

Country Status (6)

Country Link
US (1) US20090068844A1 (enExample)
EP (2) EP3269843A1 (enExample)
JP (1) JP5491170B2 (enExample)
KR (3) KR20160062181A (enExample)
TW (1) TW200809008A (enExample)
WO (1) WO2007116033A1 (enExample)

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RU2010130570A (ru) * 2007-12-21 2012-01-27 Солвей Флуор Гмбх (De) Способ получения микроэлектромеханических систем
AU2008348838A1 (en) 2008-01-23 2009-07-30 Solvay Fluor Gmbh Process for the manufacture of solar cells
WO2010087930A1 (en) * 2009-01-27 2010-08-05 Linde Aktiengesellschaft Molecular fluorine etching of silicon thin films for photovoltaic and other lower-temperature chemical vapor deposition processes
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
WO2011051251A1 (en) * 2009-10-26 2011-05-05 Solvay Fluor Gmbh Etching process for producing a tft matrix
JP2013509700A (ja) 2009-10-30 2013-03-14 ソルヴェイ（ソシエテ アノニム） Ｆ２およびｃｏｆ２を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法
MY162759A (en) 2010-03-26 2017-07-14 Solvay Method for the supply of fluorine
GB2486883A (en) * 2010-12-22 2012-07-04 Ultra High Vacuum Solutions Ltd Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices
CN103079992A (zh) 2010-08-05 2013-05-01 索尔维公司 氟纯化的方法
TWI586842B (zh) 2010-09-15 2017-06-11 首威公司 氟之製造工廠及使用彼之方法
WO2012035000A1 (en) 2010-09-15 2012-03-22 Solvay Sa Method for the removal of f2 and/or of2 from a gas
US20130017644A1 (en) * 2011-02-18 2013-01-17 Air Products And Chemicals, Inc. Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup
JP2012216718A (ja) * 2011-04-01 2012-11-08 Kaneka Corp Ｃｖｄ装置のクリーニング方法
WO2013024041A1 (en) 2011-08-17 2013-02-21 Solvay Sa Electrolytic process for the manufacture of fluorine and an apparatus therefor
WO2013092777A1 (en) 2011-12-22 2013-06-27 Solvay Sa Plasma chamber apparatus and a method for cleaning a chamber
KR102030797B1 (ko) 2012-03-30 2019-11-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
JP6138653B2 (ja) * 2013-10-08 2017-05-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
EP2860287A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2860288A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2944385A1 (en) 2014-05-12 2015-11-18 Solvay SA A process for etching and chamber cleaning and a gas therefor
EP3095893A1 (en) * 2015-05-22 2016-11-23 Solvay SA A process for etching and chamber cleaning and a gas therefor
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
WO2021210368A1 (ja) 2020-04-14 2021-10-21 昭和電工株式会社 エッチング方法及び半導体素子の製造方法
US11961719B2 (en) 2020-06-25 2024-04-16 Hitachi High-Tech Corporation Vacuum processing method
CN114823350A (zh) * 2022-04-17 2022-07-29 中南大学 一种铌酸锂薄膜刻蚀方法

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Also Published As

Publication number Publication date
KR20090015054A (ko) 2009-02-11
US20090068844A1 (en) 2009-03-12
TW200809008A (en) 2008-02-16
WO2007116033A1 (en) 2007-10-18
EP2007923A1 (en) 2008-12-31
EP3269843A1 (en) 2018-01-17
JP2009533853A (ja) 2009-09-17
EP2007923B1 (en) 2017-07-19
KR20160062181A (ko) 2016-06-01
KR20170116213A (ko) 2017-10-18

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