DE60237380D1 - Plasmareinigungsverfahren - Google Patents

Plasmareinigungsverfahren

Info

Publication number
DE60237380D1
DE60237380D1 DE60237380T DE60237380T DE60237380D1 DE 60237380 D1 DE60237380 D1 DE 60237380D1 DE 60237380 T DE60237380 T DE 60237380T DE 60237380 T DE60237380 T DE 60237380T DE 60237380 D1 DE60237380 D1 DE 60237380D1
Authority
DE
Germany
Prior art keywords
cleaning process
plasma cleaning
plasma
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60237380T
Other languages
English (en)
Inventor
A Sekiya
Y Mitsui
Y Ohira
T Yonemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Canon Anelva Corp
Tokyo Electron Ltd
Kanto Denka Kogyo Co Ltd
Panasonic Corp
Hitachi Kokusai Electric Inc
National Institute of Advanced Industrial Science and Technology AIST
Sanyo Electric Co Ltd
Sony Corp
Renesas Electronics Corp
Ulvac Inc
AGC Inc
Resonac Holdings Corp
Original Assignee
Daikin Industries Ltd
Renesas Technology Corp
Asahi Glass Co Ltd
Showa Denko KK
Tokyo Electron Ltd
NEC Electronics Corp
Kanto Denka Kogyo Co Ltd
Panasonic Corp
Hitachi Kokusai Electric Inc
National Institute of Advanced Industrial Science and Technology AIST
Sanyo Electric Co Ltd
Sony Corp
Ulvac Inc
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd, Renesas Technology Corp, Asahi Glass Co Ltd, Showa Denko KK, Tokyo Electron Ltd, NEC Electronics Corp, Kanto Denka Kogyo Co Ltd, Panasonic Corp, Hitachi Kokusai Electric Inc, National Institute of Advanced Industrial Science and Technology AIST, Sanyo Electric Co Ltd, Sony Corp, Ulvac Inc, Anelva Corp filed Critical Daikin Industries Ltd
Application granted granted Critical
Publication of DE60237380D1 publication Critical patent/DE60237380D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE60237380T 2001-08-30 2002-08-26 Plasmareinigungsverfahren Expired - Lifetime DE60237380D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001261484 2001-08-30
PCT/JP2002/008566 WO2003021653A1 (fr) 2001-08-30 2002-08-26 Gaz de nettoyage par plasma et procede de nettoyage par plasma

Publications (1)

Publication Number Publication Date
DE60237380D1 true DE60237380D1 (de) 2010-09-30

Family

ID=19088525

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60237380T Expired - Lifetime DE60237380D1 (de) 2001-08-30 2002-08-26 Plasmareinigungsverfahren

Country Status (7)

Country Link
US (1) US7322368B2 (de)
EP (1) EP1437768B1 (de)
KR (1) KR100682042B1 (de)
CN (1) CN1271690C (de)
DE (1) DE60237380D1 (de)
TW (1) TW583736B (de)
WO (1) WO2003021653A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112546B2 (en) * 2003-09-02 2006-09-26 Texas Instruments Incorporated Method of manufacturing semiconductor devices comprising a deposition tool cleaning process having a moving plasma zone
US7737382B2 (en) * 2004-04-01 2010-06-15 Lincoln Global, Inc. Device for processing welding wire
US20060016459A1 (en) * 2004-05-12 2006-01-26 Mcfarlane Graham High rate etching using high pressure F2 plasma with argon dilution
JP4178414B2 (ja) * 2004-12-27 2008-11-12 セイコーエプソン株式会社 強誘電体膜、強誘電体キャパシタおよび強誘電体メモリ
JP2009503905A (ja) * 2005-08-02 2009-01-29 マサチューセッツ インスティテュート オブ テクノロジー 表面沈着物の除去および化学蒸着（ｃｖｄ）チャンバーの内部の内部表面の不動態化方法
US20090047447A1 (en) * 2005-08-02 2009-02-19 Sawin Herbert H Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor
WO2007016631A1 (en) * 2005-08-02 2007-02-08 Massachusetts Institute Of Technology Method of using nf3 for removing surface deposits
US7691208B2 (en) * 2005-08-31 2010-04-06 Tokyo Electron Limited Cleaning method
WO2007116033A1 (en) * 2006-04-10 2007-10-18 Solvay Fluor Gmbh Etching process
CN101466873B (zh) * 2006-04-10 2012-09-26 苏威氟有限公司 蚀刻方法
US20080236483A1 (en) * 2007-03-27 2008-10-02 Jun Sonobe Method for low temperature thermal cleaning
US8308871B2 (en) * 2008-11-26 2012-11-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Thermal cleaning gas production and supply system
TW201123293A (en) * 2009-10-26 2011-07-01 Solvay Fluor Gmbh Etching process for producing a TFT matrix
KR101107077B1 (ko) * 2010-06-10 2012-01-20 삼성에스디아이 주식회사 플라즈마 세정 장치
EP2404872A1 (de) * 2010-07-05 2012-01-11 Solvay SA Fluorbehälter
US20130276820A1 (en) * 2010-08-25 2013-10-24 Jean-Charles Cigal Chemical vapor deposition chamber cleaning with molecular fluorine
EP2871669A1 (de) * 2013-11-07 2015-05-13 Solvay SA Gasmisschung und Gastransportgefäß dafür
US20150187562A1 (en) * 2013-12-27 2015-07-02 Taiwan Semiconductor Manufacturing Company Ltd. Abatement water flow control system and operation method thereof
CN111593327B (zh) * 2020-06-30 2022-08-19 度亘激光技术（苏州）有限公司 一种mocvd设备清洁方法
CN114752918B (zh) * 2021-01-08 2024-06-04 江苏鲁汶仪器股份有限公司 一种腔室的清洗方法
JP7393409B2 (ja) * 2021-12-24 2023-12-06 株式会社Kokusai Electric クリーニング方法、半導体装置の製造方法、プログラム及び基板処理装置
CN115491658B (zh) * 2022-09-26 2024-03-12 江苏筑磊电子科技有限公司 一种使用等离子中解离的f2进行cvd室清洁的方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2890493B2 (ja) 1989-07-10 1999-05-17 ソニー株式会社 プラズマ処理装置及びプラズマ処理方法
JP2746448B2 (ja) 1990-02-07 1998-05-06 セントラル硝子株式会社 混合ガス組成物
US5425842A (en) 1992-06-09 1995-06-20 U.S. Philips Corporation Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
JP3571404B2 (ja) * 1995-03-03 2004-09-29 アネルバ株式会社 プラズマｃｖｄ装置及びその場クリーニング後処理方法
JP3485290B2 (ja) * 1996-03-15 2004-01-13 和夫 杉山 物質表面の有機物の除去方法
JPH1012593A (ja) 1996-06-20 1998-01-16 Hitachi Ltd 半導体製造装置のクリーニング方法
US6626185B2 (en) 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
JPH1072672A (ja) * 1996-07-09 1998-03-17 Applied Materials Inc 非プラズマ式チャンバクリーニング法
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
DE10029523A1 (de) 2000-06-21 2002-01-10 Messer Griesheim Gmbh Verfahren und Vorrichtung zum Reinigen eines PVD- oder CVD-Reaktors sowie von Abgasleitungen desselben
JP2002198357A (ja) * 2000-12-27 2002-07-12 Showa Denko Kk 半導体製造装置のクリーニングガス及びクリーニング方法
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
US6843258B2 (en) * 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
JP4791637B2 (ja) 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法

Also Published As

Publication number Publication date
EP1437768B1 (de) 2010-08-18
KR100682042B1 (ko) 2007-02-15
WO2003021653A1 (fr) 2003-03-13
US7322368B2 (en) 2008-01-29
US20040016441A1 (en) 2004-01-29
EP1437768A4 (de) 2007-03-21
EP1437768A1 (de) 2004-07-14
CN1271690C (zh) 2006-08-23
TW583736B (en) 2004-04-11
CN1526159A (zh) 2004-09-01
KR20030051745A (ko) 2003-06-25

Similar Documents

Publication Publication Date Title
DE60237380D1 (de) Plasmareinigungsverfahren
DE60233339D1 (de) Reinigungsmittel
NO20054134D0 (no) Renseprosess
DE60005579D1 (de) Beschleunigte Plasmareinigung
DE60204873D1 (de) Fischer-tropsch-syntheseverfahren
DE60133231D1 (de) Polierverfahren
DE60227765D1 (de) Plasmabildschirm
DE60335951D1 (de) Plasmaverarbeitungsgerät
NO20022644D0 (no) Renseprosess
DE10196082T1 (de) FLIP-CHIP-Montageverfahren
NO20035219D0 (no) Fischer-Tropsch-fremgangsmåte
DE60233109D1 (de) Radidentifikator- ortungsverfahren
GB2384185B (en) Cleaning process
ATE427957T1 (de) Echinocandinverfahren
GB0120284D0 (en) Cleaning aid
DE50202698D1 (de) Beschichtungsverfahren
DE50204513D1 (de) Beschichtungsverfahren
DE50211864D1 (de) Ochemischen prozessen
NO20035222D0 (no) Fischer-Tropsch-fremgangsmåte
DE50208867D1 (de) Beschichtungsverfahren
DE60217482D1 (de) Reinigungseinrichtung
NO20022643D0 (no) Reduksjonsprosess
ATE296616T1 (de) Reinigungszusammensetzung
AUPR439901A0 (en) Cleaning process
GB0128321D0 (en) Cleaning method

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: ANELVA CORP., FUCHU, TOKIO/TOKYO, JP

Owner name: ASAHI GLASS CO., LTD., TOKIO/TOKYO, JP

Owner name: DAIKIN INDUSTRIES, LTD., OSAKA, JP

Owner name: HITACHI KOKUSAI ELECTRIC INC., TOKIO/TOKYO, JP

Owner name: KANTO DENKA KOGYO CO., LTD., TOKIO/TOKYO, JP

Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIE, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

Owner name: PANASONIC CORPORATION, KADOMA-SHI, OSAKA, JP

Owner name: RENESAS ELECTRONICS CORP., KAWASAKI-SHI, KANAG, JP

Owner name: SANYO ELECTRIC CO., LTD., MORIGUCHI, OSAKA, JP

Owner name: SHOWA DENKO K.K., TOKIO/TOKYO, JP

Owner name: SONY CORP., TOKIO/TOKYO, JP

Owner name: TOKYO ELECTRON LTD., TOKYO, JP

Owner name: ULVAC, INC., CHIGASAKI-SHI, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: KUDLEK & GRUNERT PATENTANWAELTE PARTNERSCHAFT, 803

8327 Change in the person/name/address of the patent owner

Owner name: ASAHI GLASS CO., LTD., TOKIO/TOKYO, JP

Owner name: CANON ANELVA CORP., KAWASAKI, KANAGAWA, JP

Owner name: DAIKIN INDUSTRIES, LTD., OSAKA, JP

Owner name: HITACHI KOKUSAI ELECTRIC INC., TOKIO/TOKYO, JP

Owner name: KANTO DENKA KOGYO CO., LTD., TOKIO/TOKYO, JP

Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIE, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

Owner name: PANASONIC CORPORATION, KADOMA-SHI, OSAKA, JP

Owner name: RENESAS TECHNOLOGY CORP., TOKYO, JP

Owner name: SANYO ELECTRIC CO., LTD., MORIGUCHI, OSAKA, JP

Owner name: SHOWA DENKO K.K., TOKIO/TOKYO, JP

Owner name: SONY CORP., TOKIO/TOKYO, JP

Owner name: TOKYO ELECTRON LTD., TOKYO, JP

Owner name: ULVAC, INC., CHIGASAKI-SHI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ASAHI GLASS CO., LTD., TOKIO/TOKYO, JP

Owner name: CANON ANELVA CORP., KAWASAKI, KANAGAWA, JP

Owner name: DAIKIN INDUSTRIES, LTD., OSAKA, JP

Owner name: HITACHI KOKUSAI ELECTRIC INC., TOKIO/TOKYO, JP

Owner name: KANTO DENKA KOGYO CO., LTD., TOKIO/TOKYO, JP

Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIE, JP

Owner name: PANASONIC CORPORATION, KADOMA-SHI, OSAKA, JP

Owner name: RENESAS ELECTRONICS CORP., KAWASAKI-SHI, KANAG, JP

Owner name: SANYO ELECTRIC CO., LTD., MORIGUCHI-SHI, OSAKA, JP

Owner name: SHOWA DENKO K.K., TOKIO/TOKYO, JP

Owner name: SONY CORP., TOKIO/TOKYO, JP

Owner name: TOKYO ELECTRON LTD., TOKYO, JP

Owner name: ULVAC, INC., CHIGASAKI-SHI, KANAGAWA, JP