CN115491658B - 一种使用等离子中解离的f2进行cvd室清洁的方法 - Google Patents
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Abstract
一种使用等离子中解离的F2进行CVD室清洁的方法,所述方法包括如下步骤:S1、更换F2钢瓶,安装从气瓶到CVD室的F2‑气体混合物的输送管线;S2、在新安装的气体输送系统中缓慢流动F2‑气体混合物,实现持久钝化;S3、将气体柜、气体输送系统和F2钢瓶放置在带有安全排气装置的封闭柜内,并将气体柜与13.56‑MHz PECVD反应器连接起来;S4、使用干泵系统将PECVD室抽空至40mTorr,基座和室壁保持恒温;S5、平行板反应器、喷头和基座之间的距离控制在12.5~19mm,固定射频功率和工作压力;S6、控制气体流速为1250~1650sccm,清洗CVD腔室。
Description
技术领域
本发明涉及半导体清洁技术领域,特别一种使用等离子中解离的F2进行CVD室清洁的方法。
背景技术
半导体芯片制造商在其原位处理中使用各种气体来对硅晶片进行图案化并实现化学气相沉积(CVD)腔室的快速清洁。为了在薄膜沉积过程中保持高产量,必须优化清洁步骤,以完美去除沉积在CVD室内壁上的残留薄膜,而不会产生任何颗粒。CVD室内颗粒的存在会导致器件性能下降。
半导体工业使用的气体大部分是CF4、C2F6和C3F8(它们被命名为全氟化碳)、三氟化氮NF3和六氟化硫SF6。这些气体的主要应用是去除等离子增强化学气相沉积工艺(PECVD)后残留在沉积室内的薄膜。最重要的要去除的材料是介电层,例如氧化硅、含碳的氧化硅、氮化硅,在一定程度上,还有导电膜,例如掺杂的多晶硅和硅化物层。根据世界半导体理事会的数据,2013年半导体行业在全球范围内使用了7512吨NF3、1133吨CF4和708吨C2F6。大约72%的半导体工业气体排放是由这三种气体引起的。在半导体工业制程条件下,10-80%之间的不可忽略量的未反应氟化气体被释放到大气中。不幸的是,它们都是具有高全球变暖潜力的温室气体。为此,我们提出一种使用等离子中解离的F2进行CVD室清洁的方法。
发明内容
本发明的主要目的在于提供一种使用等离子中解离的F2进行CVD室清洁的方法,可以有效解决背景技术中的问题。
一种使用等离子中解离的F2进行CVD室清洁的方法,所述方法包括如下步骤:
S1、更换F2钢瓶,安装从气瓶到CVD室的F2-气体混合物的输送管线;
S2、在新安装的气体输送系统中缓慢流动F2-气体混合物,实现持久钝化;
S3、将气体柜、气体输送系统和F2钢瓶放置在带有安全排气装置的封闭柜内,并将气体柜与13.56-MHzPECVD反应器连接起来;
S4、使用干泵系统将PECVD室抽空至40mTorr,基座和室壁保持恒温;
S5、平行板反应器、喷头和基座之间的距离控制在12.5~19mm,固定射频功率和工作压力;
S6、控制气体流速为1250~1650sccm,清洗CVD腔室。
进一步,所述步骤S1中包括:
①更换钢瓶时,使用干燥的N2气流吹扫管路;
②F2-气体混合物至少含有F220~25份,Ar65~70份,N25~15份;
③输送管线材质为不锈钢。
进一步,所述步骤S2包括:在气体管线的不锈钢表面内形成金属氟化物,保护气体管线免受任何腐蚀。
进一步,所述步骤S3中包括:
①将安装在气柜安全排气口的F2传感器连接到F2气瓶的安全阀,并在检测到F2时自动切断气流;
②使用气体质量流量控制器,控制F2-气体混合物的流量。
进一步,所述步骤S4中包括:
①基座温度设置为400℃;
②通过连续水冷将室壁温度恒定在55℃。
进一步,所述步骤S5中包括:
①射频功率为650~800w;
②射频工作压力为2.0~2.3Torr。
本发明提供的一种使用等离子中解离的F2进行CVD室清洁的方法,工作人员使用干燥的N2气流吹扫管路,更换F2钢瓶,安装从气瓶到CVD室的F2-气体混合物的不锈钢输送管线;F2-气体混合物至少含有F220~25份,Ar65~70份,N25~15份;通过在新安装的气体输送系统中缓慢流动F2-气体混合物,在气体管线的不锈钢表面内形成金属氟化物,从而实现持久钝化,保护气体管线免受任何腐蚀;将气体柜、气体输送系统和F2钢瓶放置在带有安全排气装置的封闭柜内,并气体柜与13.56-MHzPECVD反应器连接起来;使用气体质量流量控制器,控制F2-气体混合物流量;将安装在气柜安全排气口的F2传感器连接到F2气瓶的安全阀,并在检测到F2时自动切断气流,确保安全防御措施到位;随后工作人员再通过使用干泵系统将PECVD室抽空至大约40mTorr,基座温度设置为400℃,通过连续水冷将室壁温度恒定在55℃;将平行板反应器、喷头和基座之间的距离控制在12.5~19mm,设定射频功率为650~800w,射频工作压力为2.0~2.3Torr;控制气体流速为1250~1650sccm,清洗CVD腔室。该方法在保持与原有CVD设备兼容的同时,能有效去除化学气相沉积(CVD)室内壁和设备其他部分上的沉积层,增加设备的正常运行时间和吞吐量,减少了化学产品的使用量,降低了材料成本,并且减少了温室气体的排放。
附图说明
图1为本发明一种使用等离子中解离的F2进行CVD室清洁的方法的流程示意图。
具体实施方式
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,下面结合具体实施方式,进一步阐述本发明。
如图1所示,一种使用等离子中解离的F2进行CVD室清洁的方法,处理方法包括如下步骤:
S1、更换F2钢瓶,安装从气瓶到CVD室的F2-气体混合物的输送管线;
S2、在新安装的气体输送系统中缓慢流动F2-气体混合物,实现持久钝化;
S3、将气体柜、气体输送系统和F2钢瓶放置在带有安全排气装置的封闭柜内,并将气体柜与13.56-MHzPECVD反应器连接起来;
S4、使用干泵系统将PECVD室抽空至40mTorr,基座和室壁保持恒温;
S5、平行板反应器、喷头和基座之间的距离控制在12.5~19mm,固定射频功率和工作压力;
S6、控制气体流速为1250~1650sccm,清洗CVD腔室。
根据本发明提供的技术方案,步骤S1中包括:
①更换钢瓶时,使用干燥的N2气流吹扫管路;
②F2-气体混合物至少含有F220~25份,Ar65~70份,N25~15份;
③输送管线材质为不锈钢。
根据本发明提供的技术方案,步骤S2包括:在气体管线的不锈钢表面内形成金属氟化物,保护气体管线免受任何腐蚀。
根据本发明提供的技术方案,步骤S3中包括:
①将安装在气柜安全排气口的F2传感器连接到F2气瓶的安全阀,并在检测到F2时自动切断气流;
②使用气体质量流量控制器,控制F2-气体混合物的流量。
根据本发明提供的技术方案,步骤S4中包括:
①基座温度设置为400℃;
②通过连续水冷将室壁温度恒定在55℃。
根据本发明提供的技术方案,步骤S5中包括:
①射频功率为650~800w;
②射频工作压力为2.0~2.3Torr。
本发明提供的一种使用等离子中解离的F2进行CVD室清洁的方法,工作人员使用干燥的N2气流吹扫管路,更换F2钢瓶,安装从气瓶到CVD室的F2-气体混合物的不锈钢输送管线;F2-气体混合物至少含有F220~25份,Ar65~70份,N25~15份;通过在新安装的气体输送系统中缓慢流动F2-气体混合物,在气体管线的不锈钢表面内形成金属氟化物,从而实现持久钝化,保护气体管线免受任何腐蚀;将气体柜、气体输送系统和F2钢瓶放置在带有安全排气装置的封闭柜内,并气体柜与13.56-MHzPECVD反应器连接起来;使用气体质量流量控制器,控制F2-气体混合物流量;将安装在气柜安全排气口的F2传感器连接到F2气瓶的安全阀,并在检测到F2时自动切断气流,确保安全防御措施到位;随后工作人员再通过使用干泵系统将PECVD室抽空至大约40mTorr,基座温度设置为400℃,通过连续水冷将室壁温度恒定在55℃;将平行板反应器、喷头和基座之间的距离控制在12.5~19mm,设定射频功率为650~800w,射频工作压力为2.0~2.3Torr;控制气体流速为1250~1650sccm,清洗CVD腔室。该方法在保持与原有CVD设备兼容的同时,能有效去除化学气相沉积(CVD)室内壁和设备其他部分上的沉积层,增加设备的正常运行时间和吞吐量,减少了化学产品的使用量,降低了材料成本,并且减少了温室气体的排放。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (1)
1.一种使用等离子中解离的F2进行CVD室清洁的方法,其特征在于:所述方法包括如下步骤:
S1、更换F2钢瓶,安装从气瓶到CVD室的F2-气体混合物的输送管线;
其中所述步骤S1中包括:
①更换钢瓶时,使用干燥的N2气流吹扫管路;
②F2-气体混合物至少含有F220~25份,Ar 65~70份,N25~15份;
③输送管线材质为不锈钢;
S2、在新安装的气体输送系统中缓慢流动F2-气体混合物,实现持久钝化,在气体管线的不锈钢表面内形成金属氟化物;
S3、将气体柜、气体输送系统和F2钢瓶放置在带有安全排气装置的封闭柜内,并将气体柜与13.56-MHz PECVD反应器连接起来;
其中,将安装在气柜安全排气口的F2传感器连接到F2气瓶的安全阀,并在检测到F2时自动切断气流;
使用气体质量流量控制器,控制F2-气体混合物的流量;
S4、使用干泵系统将PECVD室抽空至40mTorr,基座和室壁保持恒温;
其中,基座温度设置为400℃;
通过连续水冷将室壁温度恒定在55℃;
S5、平行板反应器、喷头和基座之间的距离控制在12.5~19mm,固定射频功率和工作压力;
其中,射频功率为650~800w;
射频工作压力为2.0~2.3Torr;
S6、控制气体流速为1250~1650sccm,清洗CVD腔室。
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