JP4178414B2 - 強誘電体膜、強誘電体キャパシタおよび強誘電体メモリ - Google Patents
強誘電体膜、強誘電体キャパシタおよび強誘電体メモリ Download PDFInfo
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- JP4178414B2 JP4178414B2 JP2004376702A JP2004376702A JP4178414B2 JP 4178414 B2 JP4178414 B2 JP 4178414B2 JP 2004376702 A JP2004376702 A JP 2004376702A JP 2004376702 A JP2004376702 A JP 2004376702A JP 4178414 B2 JP4178414 B2 JP 4178414B2
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- ferroelectric
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- ferroelectric film
- capacitor
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Description
(a)ニオブ元素を含むポリカルボン酸塩と、ビスマス元素を含むポリカルボン酸塩と、ポリカルボン酸またはポリカルボン酸エステルと、有機溶媒と、を混合する工程と、
(b)混合した溶液を、基体上に塗布した後、熱処理することにより、BiNbO4からなる強誘電体膜を形成する工程と、を含む。
(a)ニオブ元素を含む金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ビスマス元素を含む金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ポリカルボン酸またはポリカルボン酸エステルと、有機溶媒とを混合することにより、前記ポリカルボン酸または前記ポリカルボン酸エステルに由来するポリカルボン酸と、前記ニオブ元素を含む金属アルコキシドおよび前記ビスマス元素を含む金属アルコキシドとをエステル化反応させて強誘電体の前駆体組成物を作製する工程と、
(b)前記前駆体組成物を、基体上に塗布した後、熱処理することにより、BiNbO4からなる強誘電体膜を形成する工程と、
を含む。
図1は、本実施の形態にかかる強誘電体膜101を用いた強誘電体キャパシタ100を模式的に示す断面図である。
次に、本実施の形態における強誘電体膜および強誘電体キャパシタの製造方法について説明する。
プロパノール(プロピルアルコール)として、1−プロパノール(沸点97.4℃)、2−プロパノール(沸点82.7℃)、
ブタノール(ブチルアルコール)として、1−ブタノール(沸点117℃)、2−ブタノール(沸点100℃)、2−メチル−1−プロパノール(沸点108℃)、2−メチル−2−プロパノール(融点25.4℃,沸点83℃)、
ペンタノール(アミルアルコール)として、1−ペンタノール(沸点137℃)、3−メチル−1−ブタノール(沸点131℃)、2−メチル−1−ブタノール(沸点128℃)、2,2ジメチル−1−プロパノール(沸点113℃)、2−ペンタノール(沸点119℃)、3−メチル−2−ブタノール(沸点112.5℃)、3−ペンタノール(沸点117℃)、2−メチル−2−ブタノール(沸点102℃)、
多価アルコール類;
エチレングリコール(融点−11.5℃,沸点197.5℃)、グリセリン(融点17℃,沸点290℃)。
図4(A)および図4(B)は、本発明の実施形態における、単純マトリクス型の強誘電体メモリ装置300の構成を示した図である。図4(A)はその平面図、図4(B)は図4(A)のA−A線に沿った断面図である。強誘電体メモリ装置300は、図4(A)および図4(B)に示すように、基板308上に形成された所定の数配列されたワード線301〜303と、所定の数配列されたビット線304〜306とを有する。ワード線301〜303とビット線304〜306との間には、上記実施の形態において説明した強誘電体膜307が挿入され、ワード線301〜303とビット線304〜306との交差領域に強誘電体キャパシタが形成される。
以下、本発明の実験例について説明する。
Claims (5)
- BiNbO4に、Si、あるいはSiおよびGeが添加されてなる、強誘電体膜。
- 請求項1において、
前記BiNbO4は、Bi層状ペロブスカイト構造を有する、強誘電体膜。 - 請求項1または請求項2において、
前記強誘電体膜のX線回折パターンは、BiNbO4に由来する(141)面および(211)面のピークを有する、強誘電体膜。 - 請求項1ないし請求項3のいずれかに記載の強誘電体膜を有する、強誘電体キャパシタ。
- 請求項4に記載の強誘電体キャパシタを有する、強誘電体メモリ。
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JP2004376702A JP4178414B2 (ja) | 2004-12-27 | 2004-12-27 | 強誘電体膜、強誘電体キャパシタおよび強誘電体メモリ |
EP05028009A EP1675163A3 (en) | 2004-12-27 | 2005-12-21 | Ferroelectric film and method of manufacturing the same |
US11/316,172 US20060140031A1 (en) | 2004-12-27 | 2005-12-22 | Ferroelectric film and method of manufacturing the same |
KR1020050129722A KR100781844B1 (ko) | 2004-12-27 | 2005-12-26 | 강유전체막 및 그의 제조 방법 |
CNA2005101341019A CN1797770A (zh) | 2004-12-27 | 2005-12-26 | 铁电膜及其制造方法 |
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KR100902870B1 (ko) | 2007-11-07 | 2009-06-16 | 고려대학교 산학협력단 | 유전체 조성물 및 이로 형성되는 유전체 박막층을 구비하는스위칭 소자 |
US8055944B2 (en) * | 2008-08-12 | 2011-11-08 | International Business Machines Corporation | Customization and reuse of logged agent activity during remote take over help session |
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JP5754539B2 (ja) * | 2013-10-15 | 2015-07-29 | 三菱マテリアル株式会社 | LaNiO3薄膜形成用組成物及びこの組成物を用いたLaNiO3薄膜の形成方法 |
CN103572370B (zh) * | 2013-10-29 | 2016-02-24 | 西安交通大学 | 一种镱酸铋单晶外延薄膜及其制备方法 |
CN106458631B (zh) | 2014-07-25 | 2020-02-07 | 国立大学法人北陆先端科学技术大学院大学 | 氧化物介电体及其制造方法、以及固态电子装置及其制造方法 |
CN105559941B (zh) * | 2015-12-12 | 2017-11-24 | 西安交通大学 | 测量全牙列动态啮合的凝胶薄膜阵列式电容传感器及方法 |
JP6892459B2 (ja) * | 2016-12-22 | 2021-06-23 | 国立大学法人北陸先端科学技術大学院大学 | 酸化物誘電体及びその製造方法、並びに固体電子装置及びその製造方法 |
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