KR20160062181A - 에칭 방법 - Google Patents
에칭 방법 Download PDFInfo
- Publication number
- KR20160062181A KR20160062181A KR1020167012718A KR20167012718A KR20160062181A KR 20160062181 A KR20160062181 A KR 20160062181A KR 1020167012718 A KR1020167012718 A KR 1020167012718A KR 20167012718 A KR20167012718 A KR 20167012718A KR 20160062181 A KR20160062181 A KR 20160062181A
- Authority
- KR
- South Korea
- Prior art keywords
- fluorine
- argon
- nitrogen
- mixture
- mixtures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005530 etching Methods 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 156
- 239000000203 mixture Substances 0.000 claims abstract description 133
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 131
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 128
- 239000011737 fluorine Substances 0.000 claims abstract description 128
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 126
- 229910052786 argon Inorganic materials 0.000 claims abstract description 83
- 239000007789 gas Substances 0.000 claims abstract description 71
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000004140 cleaning Methods 0.000 claims description 37
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 229910010272 inorganic material Inorganic materials 0.000 claims description 9
- 239000011147 inorganic material Substances 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 abstract description 38
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 229910004166 TaN Inorganic materials 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 11
- 239000000356 contaminant Substances 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000008240 homogeneous mixture Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- -1 CF 4 Chemical class 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical class FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 1
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- LIAHTVQLBSLHDQ-UHFFFAOYSA-N [N].[Ar].[F] Chemical compound [N].[Ar].[F] LIAHTVQLBSLHDQ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- C23F4/04—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by physical dissolution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06007540 | 2006-04-10 | ||
| EP06007540.5 | 2006-04-10 | ||
| EP06008238.5 | 2006-04-21 | ||
| EP06008238 | 2006-04-21 | ||
| PCT/EP2007/053421 WO2007116033A1 (en) | 2006-04-10 | 2007-04-06 | Etching process |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147023150A Division KR20140108347A (ko) | 2006-04-10 | 2007-04-06 | 에칭 방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177027546A Division KR20170116213A (ko) | 2006-04-10 | 2007-04-06 | 에칭 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160062181A true KR20160062181A (ko) | 2016-06-01 |
Family
ID=38164383
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020167012718A Ceased KR20160062181A (ko) | 2006-04-10 | 2007-04-06 | 에칭 방법 |
| KR1020087027400A Ceased KR20090015054A (ko) | 2006-04-10 | 2007-04-06 | 에칭 방법 |
| KR1020177027546A Ceased KR20170116213A (ko) | 2006-04-10 | 2007-04-06 | 에칭 방법 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087027400A Ceased KR20090015054A (ko) | 2006-04-10 | 2007-04-06 | 에칭 방법 |
| KR1020177027546A Ceased KR20170116213A (ko) | 2006-04-10 | 2007-04-06 | 에칭 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090068844A1 (enExample) |
| EP (2) | EP3269843A1 (enExample) |
| JP (1) | JP5491170B2 (enExample) |
| KR (3) | KR20160062181A (enExample) |
| TW (1) | TW200809008A (enExample) |
| WO (1) | WO2007116033A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2010130570A (ru) * | 2007-12-21 | 2012-01-27 | Солвей Флуор Гмбх (De) | Способ получения микроэлектромеханических систем |
| AU2008348838A1 (en) | 2008-01-23 | 2009-07-30 | Solvay Fluor Gmbh | Process for the manufacture of solar cells |
| WO2010087930A1 (en) * | 2009-01-27 | 2010-08-05 | Linde Aktiengesellschaft | Molecular fluorine etching of silicon thin films for photovoltaic and other lower-temperature chemical vapor deposition processes |
| US9627180B2 (en) * | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
| WO2011051251A1 (en) * | 2009-10-26 | 2011-05-05 | Solvay Fluor Gmbh | Etching process for producing a tft matrix |
| JP2013509700A (ja) | 2009-10-30 | 2013-03-14 | ソルヴェイ（ソシエテ アノニム） | Ｆ２およびｃｏｆ２を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法 |
| MY162759A (en) | 2010-03-26 | 2017-07-14 | Solvay | Method for the supply of fluorine |
| GB2486883A (en) * | 2010-12-22 | 2012-07-04 | Ultra High Vacuum Solutions Ltd | Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices |
| CN103079992A (zh) | 2010-08-05 | 2013-05-01 | 索尔维公司 | 氟纯化的方法 |
| TWI586842B (zh) | 2010-09-15 | 2017-06-11 | 首威公司 | 氟之製造工廠及使用彼之方法 |
| WO2012035000A1 (en) | 2010-09-15 | 2012-03-22 | Solvay Sa | Method for the removal of f2 and/or of2 from a gas |
| US20130017644A1 (en) * | 2011-02-18 | 2013-01-17 | Air Products And Chemicals, Inc. | Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup |
| JP2012216718A (ja) * | 2011-04-01 | 2012-11-08 | Kaneka Corp | Ｃｖｄ装置のクリーニング方法 |
| WO2013024041A1 (en) | 2011-08-17 | 2013-02-21 | Solvay Sa | Electrolytic process for the manufacture of fluorine and an apparatus therefor |
| WO2013092777A1 (en) | 2011-12-22 | 2013-06-27 | Solvay Sa | Plasma chamber apparatus and a method for cleaning a chamber |
| KR102030797B1 (ko) | 2012-03-30 | 2019-11-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 제조 방법 |
| JP6138653B2 (ja) * | 2013-10-08 | 2017-05-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| EP2860287A1 (en) | 2013-10-11 | 2015-04-15 | Solvay SA | Improved electrolytic cell |
| EP2860288A1 (en) | 2013-10-11 | 2015-04-15 | Solvay SA | Improved electrolytic cell |
| EP2944385A1 (en) | 2014-05-12 | 2015-11-18 | Solvay SA | A process for etching and chamber cleaning and a gas therefor |
| EP3095893A1 (en) * | 2015-05-22 | 2016-11-23 | Solvay SA | A process for etching and chamber cleaning and a gas therefor |
| US10161034B2 (en) | 2017-04-21 | 2018-12-25 | Lam Research Corporation | Rapid chamber clean using concurrent in-situ and remote plasma sources |
| WO2021210368A1 (ja) | 2020-04-14 | 2021-10-21 | 昭和電工株式会社 | エッチング方法及び半導体素子の製造方法 |
| US11961719B2 (en) | 2020-06-25 | 2024-04-16 | Hitachi High-Tech Corporation | Vacuum processing method |
| CN114823350A (zh) * | 2022-04-17 | 2022-07-29 | 中南大学 | 一种铌酸锂薄膜刻蚀方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3518132A (en) * | 1966-07-12 | 1970-06-30 | Us Army | Corrosive vapor etching process for semiconductors using combined vapors of hydrogen fluoride and nitrous oxide |
| JP2626913B2 (ja) * | 1988-07-29 | 1997-07-02 | 三菱電機株式会社 | シリコン表面の処理方法 |
| US5425842A (en) * | 1992-06-09 | 1995-06-20 | U.S. Philips Corporation | Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber |
| KR100230981B1 (ko) * | 1996-05-08 | 1999-11-15 | 김광호 | 반도체장치 제조공정의 플라즈마 식각 방법 |
| JPH1072672A (ja) * | 1996-07-09 | 1998-03-17 | Applied Materials Inc | 非プラズマ式チャンバクリーニング法 |
| US6274058B1 (en) * | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
| US6468490B1 (en) * | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
| JP4346741B2 (ja) * | 1999-08-05 | 2009-10-21 | キヤノンアネルバ株式会社 | 発熱体ｃｖｄ装置及び付着膜の除去方法 |
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-
2007
- 2007-04-06 EP EP17180963.5A patent/EP3269843A1/en not_active Withdrawn
- 2007-04-06 EP EP07727889.3A patent/EP2007923B1/en active Active
- 2007-04-06 KR KR1020167012718A patent/KR20160062181A/ko not_active Ceased
- 2007-04-06 KR KR1020087027400A patent/KR20090015054A/ko not_active Ceased
- 2007-04-06 US US12/296,139 patent/US20090068844A1/en not_active Abandoned
- 2007-04-06 KR KR1020177027546A patent/KR20170116213A/ko not_active Ceased
- 2007-04-06 JP JP2009504707A patent/JP5491170B2/ja active Active
- 2007-04-06 WO PCT/EP2007/053421 patent/WO2007116033A1/en not_active Ceased
- 2007-04-10 TW TW096112512A patent/TW200809008A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP5491170B2 (ja) | 2014-05-14 |
| KR20090015054A (ko) | 2009-02-11 |
| US20090068844A1 (en) | 2009-03-12 |
| TW200809008A (en) | 2008-02-16 |
| WO2007116033A1 (en) | 2007-10-18 |
| EP2007923A1 (en) | 2008-12-31 |
| EP3269843A1 (en) | 2018-01-17 |
| JP2009533853A (ja) | 2009-09-17 |
| EP2007923B1 (en) | 2017-07-19 |
| KR20170116213A (ko) | 2017-10-18 |
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