JP2018503259A5 - - Google Patents
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- JP2018503259A5 JP2018503259A5 JP2017535912A JP2017535912A JP2018503259A5 JP 2018503259 A5 JP2018503259 A5 JP 2018503259A5 JP 2017535912 A JP2017535912 A JP 2017535912A JP 2017535912 A JP2017535912 A JP 2017535912A JP 2018503259 A5 JP2018503259 A5 JP 2018503259A5
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- dielectric film
- implantation process
- exposing
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 27
- 238000005468 ion implantation Methods 0.000 claims 15
- 239000001301 oxygen Substances 0.000 claims 10
- 229910052760 oxygen Inorganic materials 0.000 claims 10
- 239000002243 precursor Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 239000012530 fluid Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 239000012528 membrane Substances 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 3
- -1 oxygen ions Chemical class 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000011066 ex-situ storage Methods 0.000 claims 2
- 238000011065 in-situ storage Methods 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000010943 off-gassing Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562100888P | 2015-01-07 | 2015-01-07 | |
| US62/100,888 | 2015-01-07 | ||
| US14/635,589 | 2015-03-02 | ||
| US14/635,589 US9777378B2 (en) | 2015-01-07 | 2015-03-02 | Advanced process flow for high quality FCVD films |
| PCT/US2015/065846 WO2016111815A1 (en) | 2015-01-07 | 2015-12-15 | Advanced process flow for high quality fcvd films |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020176093A Division JP2021044555A (ja) | 2015-01-07 | 2020-10-20 | 高品質ｆｃｖｄ膜バックグラウンド用の先進的処理フロー |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018503259A JP2018503259A (ja) | 2018-02-01 |
| JP2018503259A5 true JP2018503259A5 (enExample) | 2019-01-31 |
| JP6782702B2 JP6782702B2 (ja) | 2020-11-11 |
Family
ID=56286182
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017535912A Active JP6782702B2 (ja) | 2015-01-07 | 2015-12-15 | 高品質ｆｃｖｄ膜バックグラウンド用の先進的処理フロー |
| JP2020176093A Pending JP2021044555A (ja) | 2015-01-07 | 2020-10-20 | 高品質ｆｃｖｄ膜バックグラウンド用の先進的処理フロー |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020176093A Pending JP2021044555A (ja) | 2015-01-07 | 2020-10-20 | 高品質ｆｃｖｄ膜バックグラウンド用の先進的処理フロー |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9777378B2 (enExample) |
| JP (2) | JP6782702B2 (enExample) |
| KR (1) | KR102438577B1 (enExample) |
| CN (1) | CN107109643B (enExample) |
| TW (1) | TWI676700B (enExample) |
| WO (1) | WO2016111815A1 (enExample) |
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| JP6844176B2 (ja) * | 2016-09-29 | 2021-03-17 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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| US10811251B2 (en) | 2016-09-30 | 2020-10-20 | Intel Corporation | Dielectric gap-fill material deposition |
| US10822458B2 (en) * | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
| JP6817845B2 (ja) * | 2017-02-22 | 2021-01-20 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| JP7118511B2 (ja) * | 2017-04-04 | 2022-08-16 | アプライド マテリアルズ インコーポレイテッド | シリコン間隙充填のための二段階プロセス |
| JP7168586B2 (ja) | 2017-05-13 | 2022-11-09 | アプライド マテリアルズ インコーポレイテッド | 高品質のボイド充填法のための流動性堆積及び高密度プラズマ処理工程サイクル |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| CN109148373A (zh) * | 2017-06-16 | 2019-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US11990332B2 (en) | 2017-08-08 | 2024-05-21 | Applied Materials, Inc. | Methods and apparatus for deposition of low-k films |
| WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| SG11202001450UA (en) | 2017-09-12 | 2020-03-30 | Applied Materials Inc | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧処理システムのためのコンデンサシステム |
| KR102612989B1 (ko) | 2017-12-01 | 2023-12-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 고 에칭 선택성 비정질 탄소 막 |
| CN109994484A (zh) * | 2017-12-28 | 2019-07-09 | 中芯国际集成电路制造(上海)有限公司 | Nand存储器及其形成方法 |
| US10211045B1 (en) * | 2018-01-24 | 2019-02-19 | Globalfoundries Inc. | Microwave annealing of flowable oxides with trap layers |
| CN111656510A (zh) | 2018-02-22 | 2020-09-11 | 应用材料公司 | 处理掩模基板以实现更佳的膜质量的方法 |
| KR102536820B1 (ko) | 2018-03-09 | 2023-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
| WO2019195188A1 (en) * | 2018-04-03 | 2019-10-10 | Applied Materials, Inc. | Flowable film curing using h2 plasma |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| KR102018318B1 (ko) * | 2018-09-11 | 2019-09-04 | 주식회사 유진테크 | 박막 형성 방법 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11107674B2 (en) * | 2019-01-24 | 2021-08-31 | Applied Materials, Inc. | Methods for depositing silicon nitride |
| US10896855B2 (en) * | 2019-06-10 | 2021-01-19 | Applied Materials, Inc. | Asymmetric gate spacer formation using multiple ion implants |
| TWI894152B (zh) * | 2019-07-02 | 2025-08-21 | 美商應用材料股份有限公司 | 形成積體電路結構的方法、整合系統與電腦可讀媒介 |
| CN114174555A (zh) * | 2019-07-25 | 2022-03-11 | 弗萨姆材料美国有限责任公司 | 用于沉积含硅膜的包含硅杂环烷烃的组合物及其使用方法 |
| US11972943B2 (en) * | 2019-09-20 | 2024-04-30 | Applied Materials, Inc. | Methods and apparatus for depositing dielectric material |
| US11114606B2 (en) * | 2019-09-23 | 2021-09-07 | International Business Machines Corporation | MRAM devices containing a harden gap fill dielectric material |
| US20210175075A1 (en) * | 2019-12-09 | 2021-06-10 | Applied Materials, Inc. | Oxygen radical assisted dielectric film densification |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US11615984B2 (en) * | 2020-04-14 | 2023-03-28 | Applied Materials, Inc. | Method of dielectric material fill and treatment |
| US12004431B2 (en) | 2020-10-30 | 2024-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for MRAM devices |
| US11659771B2 (en) | 2020-11-25 | 2023-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for integrating MRAM and logic devices |
| US20220375747A1 (en) * | 2021-05-20 | 2022-11-24 | Applied Materials, Inc. | Flowable CVD Film Defect Reduction |
| US12094709B2 (en) | 2021-07-30 | 2024-09-17 | Applied Materials, Inc. | Plasma treatment process to densify oxide layers |
| US20230155007A1 (en) * | 2021-11-16 | 2023-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin profile modulation |
| US20240145217A1 (en) * | 2022-11-02 | 2024-05-02 | Applied Materials, Inc. | Method for forming highly uniform dielectric film |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH02230735A (ja) * | 1989-03-03 | 1990-09-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5319212A (en) * | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
| JP3015738B2 (ja) * | 1995-06-21 | 2000-03-06 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JPH10189578A (ja) * | 1996-12-20 | 1998-07-21 | Toshiba Corp | 半導体装置の製造方法 |
| JP3348084B2 (ja) * | 1999-12-28 | 2002-11-20 | キヤノン販売株式会社 | 成膜方法及び半導体装置 |
| US7166524B2 (en) * | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| JP2008263097A (ja) * | 2007-04-13 | 2008-10-30 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
| US7867923B2 (en) * | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
| US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
| US8980382B2 (en) * | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
| US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
| US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
| US8304351B2 (en) | 2010-01-07 | 2012-11-06 | Applied Materials, Inc. | In-situ ozone cure for radical-component CVD |
| KR101674057B1 (ko) * | 2010-04-01 | 2016-11-08 | 삼성전자 주식회사 | 강화된 복합 절연막을 포함하는 반도체 칩 구조 및 그 제조 방법 |
| US8318584B2 (en) * | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
| US20130217243A1 (en) * | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
| SG11201505371UA (en) | 2013-02-19 | 2015-09-29 | Applied Materials Inc | Hdd patterning using flowable cvd film |
| US20140273530A1 (en) * | 2013-03-15 | 2014-09-18 | Victor Nguyen | Post-Deposition Treatment Methods For Silicon Nitride |
-
2015
- 2015-03-02 US US14/635,589 patent/US9777378B2/en active Active
- 2015-12-15 JP JP2017535912A patent/JP6782702B2/ja active Active
- 2015-12-15 KR KR1020177021938A patent/KR102438577B1/ko active Active
- 2015-12-15 CN CN201580064621.9A patent/CN107109643B/zh not_active Expired - Fee Related
- 2015-12-15 WO PCT/US2015/065846 patent/WO2016111815A1/en not_active Ceased
- 2015-12-18 TW TW104142763A patent/TWI676700B/zh active
-
2020
- 2020-10-20 JP JP2020176093A patent/JP2021044555A/ja active Pending
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