CN107109643B - 高质量流动式化学气相沉积膜的先进工艺流程 - Google Patents

高质量流动式化学气相沉积膜的先进工艺流程 Download PDF

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Publication number
CN107109643B
CN107109643B CN201580064621.9A CN201580064621A CN107109643B CN 107109643 B CN107109643 B CN 107109643B CN 201580064621 A CN201580064621 A CN 201580064621A CN 107109643 B CN107109643 B CN 107109643B
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China
Prior art keywords
ion implantation
film
fcvd
dielectric film
films
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CN201580064621.9A
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Chinese (zh)
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CN107109643A (zh
Inventor
斯里尼瓦斯·D·内曼尼
埃莉卡·陈
卢多维克·戈代
薛君
怡利·Y·叶
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CN201580064621.9A 2015-01-07 2015-12-15 高质量流动式化学气相沉积膜的先进工艺流程 Expired - Fee Related CN107109643B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562100888P 2015-01-07 2015-01-07
US62/100,888 2015-01-07
US14/635,589 US9777378B2 (en) 2015-01-07 2015-03-02 Advanced process flow for high quality FCVD films
US14/635,589 2015-03-02
PCT/US2015/065846 WO2016111815A1 (en) 2015-01-07 2015-12-15 Advanced process flow for high quality fcvd films

Publications (2)

Publication Number Publication Date
CN107109643A CN107109643A (zh) 2017-08-29
CN107109643B true CN107109643B (zh) 2019-09-24

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Country Status (6)

Country Link
US (1) US9777378B2 (enExample)
JP (2) JP6782702B2 (enExample)
KR (1) KR102438577B1 (enExample)
CN (1) CN107109643B (enExample)
TW (1) TWI676700B (enExample)
WO (1) WO2016111815A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10421766B2 (en) * 2015-02-13 2019-09-24 Versum Materials Us, Llc Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films
JP6844176B2 (ja) * 2016-09-29 2021-03-17 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2018063288A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods & apparatus for high pressure cure of flowable dielectric films
US10811251B2 (en) 2016-09-30 2020-10-20 Intel Corporation Dielectric gap-fill material deposition
US10822458B2 (en) 2017-02-08 2020-11-03 Versum Materials Us, Llc Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films
JP6817845B2 (ja) * 2017-02-22 2021-01-20 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
KR102269470B1 (ko) * 2017-04-04 2021-06-24 어플라이드 머티어리얼스, 인코포레이티드 실리콘 갭충전을 위한 2-단계 프로세스
WO2018212999A1 (en) 2017-05-13 2018-11-22 Applied Materials, Inc. Cyclic flowable deposition and high-density plasma treatment proceses for high quality gap fill solutions
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
CN109148373A (zh) * 2017-06-16 2019-01-04 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
WO2019032457A1 (en) * 2017-08-08 2019-02-14 Applied Materials, Inc. METHODS AND APPARATUSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
JP7274461B2 (ja) 2017-09-12 2023-05-16 アプライド マテリアルズ インコーポレイテッド 保護バリア層を使用して半導体構造を製造する装置および方法
JP7112490B2 (ja) 2017-11-11 2022-08-03 マイクロマテリアルズ エルエルシー 高圧処理チャンバのためのガス供給システム
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
SG11202005150YA (en) 2017-12-01 2020-06-29 Applied Materials Inc Highly etch selective amorphous carbon film
CN109994484A (zh) * 2017-12-28 2019-07-09 中芯国际集成电路制造(上海)有限公司 Nand存储器及其形成方法
US10211045B1 (en) * 2018-01-24 2019-02-19 Globalfoundries Inc. Microwave annealing of flowable oxides with trap layers
JP7379353B2 (ja) 2018-02-22 2023-11-14 アプライド マテリアルズ インコーポレイテッド より優れた膜品質を可能にするためにマスク基板を処理する方法
WO2019173006A1 (en) 2018-03-09 2019-09-12 Applied Materials, Inc. High pressure annealing process for metal containing materials
KR20250041199A (ko) * 2018-04-03 2025-03-25 어플라이드 머티어리얼스, 인코포레이티드 H2 플라즈마를 사용하는 유동성 막 경화
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
KR102018318B1 (ko) * 2018-09-11 2019-09-04 주식회사 유진테크 박막 형성 방법
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP7431245B2 (ja) * 2019-01-24 2024-02-14 アプライド マテリアルズ インコーポレイテッド 窒化ケイ素を堆積する方法
US10896855B2 (en) * 2019-06-10 2021-01-19 Applied Materials, Inc. Asymmetric gate spacer formation using multiple ion implants
TWI894152B (zh) 2019-07-02 2025-08-21 美商應用材料股份有限公司 形成積體電路結構的方法、整合系統與電腦可讀媒介
CN114174555A (zh) * 2019-07-25 2022-03-11 弗萨姆材料美国有限责任公司 用于沉积含硅膜的包含硅杂环烷烃的组合物及其使用方法
US11972943B2 (en) * 2019-09-20 2024-04-30 Applied Materials, Inc. Methods and apparatus for depositing dielectric material
US11114606B2 (en) * 2019-09-23 2021-09-07 International Business Machines Corporation MRAM devices containing a harden gap fill dielectric material
US20210175075A1 (en) * 2019-12-09 2021-06-10 Applied Materials, Inc. Oxygen radical assisted dielectric film densification
US11901222B2 (en) * 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US11615984B2 (en) 2020-04-14 2023-03-28 Applied Materials, Inc. Method of dielectric material fill and treatment
US12004431B2 (en) 2020-10-30 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for MRAM devices
US11659771B2 (en) 2020-11-25 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for integrating MRAM and logic devices
US12666886B2 (en) * 2021-05-20 2026-06-23 Applied Materials, Inc. Flowable CVD film defect reduction
US12094709B2 (en) 2021-07-30 2024-09-17 Applied Materials, Inc. Plasma treatment process to densify oxide layers
US20230155007A1 (en) * 2021-11-16 2023-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin profile modulation
US20240145217A1 (en) * 2022-11-02 2024-05-02 Applied Materials, Inc. Method for forming highly uniform dielectric film
CN116093016B (zh) * 2023-02-01 2026-04-03 上海华力集成电路制造有限公司 一种浅槽隔离退火的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101418438A (zh) * 2007-10-22 2009-04-29 应用材料股份有限公司 通过来自乙硅烷前体的远程等离子体cvd的高质量氧化硅膜
CN101419914A (zh) * 2007-10-22 2009-04-29 应用材料股份有限公司 用于在沟槽内形成电介质层的方法
CN102498551A (zh) * 2009-08-06 2012-06-13 应用材料公司 使用非碳可流动cvd处理形成氧化硅
CN102714156A (zh) * 2010-01-07 2012-10-03 应用材料公司 自由基成分cvd的原位臭氧固化
CN103038868A (zh) * 2010-07-30 2013-04-10 应用材料公司 用于流动式cvd间隙填充的富含氧化物的衬垫层

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02230735A (ja) * 1989-03-03 1990-09-13 Fujitsu Ltd 半導体装置の製造方法
US5319212A (en) * 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
JP3015738B2 (ja) * 1995-06-21 2000-03-06 三洋電機株式会社 半導体装置の製造方法
JPH10189578A (ja) * 1996-12-20 1998-07-21 Toshiba Corp 半導体装置の製造方法
JP3348084B2 (ja) 1999-12-28 2002-11-20 キヤノン販売株式会社 成膜方法及び半導体装置
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
JP2008263097A (ja) 2007-04-13 2008-10-30 Toshiba Corp 半導体装置及び半導体装置の製造方法
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
US8980382B2 (en) * 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
KR101674057B1 (ko) 2010-04-01 2016-11-08 삼성전자 주식회사 강화된 복합 절연막을 포함하는 반도체 칩 구조 및 그 제조 방법
US20130217243A1 (en) * 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
MY171887A (en) 2013-02-19 2019-11-06 Applied Materials Inc Hdd patterning using flowable cvd film
US20140273530A1 (en) * 2013-03-15 2014-09-18 Victor Nguyen Post-Deposition Treatment Methods For Silicon Nitride

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101418438A (zh) * 2007-10-22 2009-04-29 应用材料股份有限公司 通过来自乙硅烷前体的远程等离子体cvd的高质量氧化硅膜
CN101419914A (zh) * 2007-10-22 2009-04-29 应用材料股份有限公司 用于在沟槽内形成电介质层的方法
CN102498551A (zh) * 2009-08-06 2012-06-13 应用材料公司 使用非碳可流动cvd处理形成氧化硅
CN102714156A (zh) * 2010-01-07 2012-10-03 应用材料公司 自由基成分cvd的原位臭氧固化
CN103038868A (zh) * 2010-07-30 2013-04-10 应用材料公司 用于流动式cvd间隙填充的富含氧化物的衬垫层

Also Published As

Publication number Publication date
US9777378B2 (en) 2017-10-03
TW201629254A (zh) 2016-08-16
JP2021044555A (ja) 2021-03-18
TWI676700B (zh) 2019-11-11
CN107109643A (zh) 2017-08-29
US20160194758A1 (en) 2016-07-07
WO2016111815A1 (en) 2016-07-14
JP6782702B2 (ja) 2020-11-11
JP2018503259A (ja) 2018-02-01
KR102438577B1 (ko) 2022-08-30
KR20170101997A (ko) 2017-09-06

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