CN102598228A - 拉伸膜的应力管理 - Google Patents

拉伸膜的应力管理 Download PDF

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CN102598228A
CN102598228A CN2010800476516A CN201080047651A CN102598228A CN 102598228 A CN102598228 A CN 102598228A CN 2010800476516 A CN2010800476516 A CN 2010800476516A CN 201080047651 A CN201080047651 A CN 201080047651A CN 102598228 A CN102598228 A CN 102598228A
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substrate
layer
plasma
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梁静美
安亚娜·M·帕特尔
妮琴·K·英吉
尚卡·文卡塔拉曼
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Applied Materials Inc
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Abstract

本发明描述了具有低破裂倾向的间隙填充氧化硅层的形成。沉积涉及可流动含硅层的形成，该可流动含硅层促进沟槽的填充。在高基板温度下的后续处理造成比根据现有技术方法所形成的可流动膜少的介电膜中的破裂。描述了在形成间隙填充氧化硅层之前所沉积的可压缩衬垫层，且可压缩衬垫层降低后续沉积的膜会破裂的倾向。在可流动含硅层后沉积的可压缩覆盖层也已经被确定可减少破裂。可单独地或组合地利用可压缩衬垫层与可压缩覆盖层来减少且经常消除破裂。此外，在所公开的实施例中，已经确定可压缩覆盖层可使得氮化硅的下伏层被转变成氧化硅层。

Description

拉伸膜的应力管理
相关申请的交叉引用
本申请是在2009年10月22日提交的发明名称为“STRESSMANAGEMENT FOR TENSILE FILMS”的美国专利申请No.12/604,332的PCT申请，且涉及在2009年8月6日提出的发明名称为“FORMATION OFSILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCES SES”的美国临时专利申请No.61/231,729，为了所有目的，援引所述申请的全部内容作为参考。
发明背景
自从几十年以前引进了半导体器件，半导体器件几何形状在尺寸上已经显著地减小。现代半导体制造设备常规地制造具有250nm、180nm与65nm特征尺寸的器件，并且正在发展且实现新设备以制造具有甚至更小几何形状的器件。减小的特征尺寸使得器件上的结构特征具有减小的空间尺寸。器件上的间隙与沟槽窄到一个程度，所述程度为间隙深度对间隙宽度的深宽比变得足够高以使得用介电材料来填充间隙变得更有挑战性。沉积的介电材料倾向于在间隙完全被填满之前在顶部堵塞，而在间隙中间产生了空隙或缝隙。
多年来，已经发展许多技术来避免使介电材料堵塞间隙的顶部，或“密封”已经形成的空隙或缝隙。一种方式是已经以高可流动的前驱物材料来开始，所述高可流动前驱物材料是在液相中应用到旋转的基板表面(例如SOG沉积技术)。这些可流动的前驱物可流动到非常小的基板间隙内且将其填满，而不会形成空隙或弱的缝隙。然而，一旦这些高可流动的材料被沉积了，所述高可流动的材料需要被固化且被硬化成固体介电材料。
在许多例子中，硬化工艺包括热处理，所述热处理从所沉积材料去除碳与羟基团而留下诸如氧化硅之类的固体电介质。遗憾地，去除的碳与羟物种经常在硬化的电介质中留下孔隙，会降低最终材料的质量。此外，硬化的电介质还倾向于在体积上收缩，会在电介质与周围基板间的界面处留下裂缝与空间。在一些例子中，硬化的电介质的体积可减少40％或更多。
因此，存在有新沉积工艺与材料的需求，所述新沉积工艺与材料可在结构化基板上形成介电材料而不会在基板间隙与沟槽中产生空隙、缝隙或二者。还存在有材料与方法的需求，所述材料与方法可硬化可流动介电材料而具有更少的孔隙与更少的收缩以及容纳仍会发生的收缩。本发明满足了这种和其它需求。
发明概述
本发明描述了具有低破裂倾向间隙填充氧化硅层的形成。沉积涉及可流动含硅层的形成，所述可流动含硅层促进沟槽的填充。在高基板温度下的后续处理造成比根据现有技术方法所形成的可流动膜少的介电膜中的破裂。描述了在形成间隙填充氧化硅层之前所沉积的可压缩衬垫层，且可压缩衬垫层降低了后续沉积的膜会破裂的倾向。在可流动含硅层后沉积的可压缩覆盖层也已经被确定可减少破裂。可单独地或组合地利用可压缩衬垫层与可压缩覆盖层来减少且经常消除破裂。此外，在所公开的实施例中，已经确定可压缩覆盖层可使得氮化硅的下伏层被转变成氧化硅层。
在一个实施例中，一种形成氧化硅层于基板上的方法，所述基板含有沟槽，所述方法包括以下步骤：传送所述基板到基板处理腔室内；形成可压缩衬垫层于所述基板上且在所述沟槽中；形成介电层于所述基板上且在所述沟槽中，其中所述介电层是起初可流动的；以及固化所述介电层。
在又一个实施例中，一种形成氧化硅层于基板上的方法，所述基板含有沟槽，所述方法包括以下步骤：传送所述基板到在基板处理腔室中的基板处理区域内；将等离子体前驱物流动到远程等离子体区域内，以形成等离子体流出物；在所述基板处理区域中结合所述等离子体流出物和含硅前驱物的流动，其中所述含硅前驱物的流动还没由等离子体激发；形成含硅与氧层于所述基板上且在所述沟槽中；形成可压缩覆盖层于所述含硅与氧层上方；以及固化所述含硅与氧层。
在再一个实施例中，一种形成氧化硅层于基板上的方法，所述基板含有沟槽，所述方法包括以下步骤：传送所述基板到基板处理腔室中的基板处理区域内；将等离子体前驱物流动到远程等离子体区域内，以形成等离子体流出物；在所述基板处理区域中结合所述等离子体流出物和含硅前驱物的流动，其中所述含硅前驱物的流动还没由等离子体激发；形成含硅与氮层于所述基板上且在该所述沟槽中；形成可压缩覆盖层于所述含硅与氮层上方；以及在含氧气氛中加热所述基板，以将所述不含碳的含硅与氮层转变成所述氧化硅层。
额外的实施例与特征部分地公开在以下说明中，且部分地对于本领域技术人员在参阅说明书时变得明显或可通过实施所公开的实施例而获悉。所公开的实施例的特征与优点可通过描述在说明书中的装置、组合和方法来了解和获得。
附图简要说明
可通过参照说明书和附图的剩余部分来进一步了解本发明的本质和优点，其中在整个附图里使用相似的附图标记来指代相似的部件。在一些情况中，次标(sublabel)与附图标记相关联且跟随在连字符后，以表示多个类似部件之一。当参照附图标记而没有指定次标时，意指所有这样的多个类似元件。
图1是流程图，所述流程图表示根据所公开的实施例的制造多层氧化硅膜的被选择的步骤。
图2是另一个流程图，所述流程图表示根据所公开的实施例的形成多层氧化硅膜的被选择的步骤。
图3是另一个流程图，所述流程图表示根据所公开的实施例的形成多层氧化硅膜的被选择的步骤。
图4示出根据所公开的实施例的基板处理系统。
图5A示出根据所公开的实施例的基板处理系统。
图5B示出根据所公开的实施例的基板处理系统的喷头。
具体描述
本发明描述具有低破裂倾向的间隙填充氧化硅层的形成。沉积涉及可流动含硅层的形成，所述可流动含硅层促进沟槽的填充。在高基板温度下的后续处理造成比根据现有技术方法所形成的可流动膜少的介电膜中的破裂。描述在形成间隙填充氧化硅层之前所沉积的可压缩衬垫层(linerlayer)，且可压缩衬垫层降低后续沉积的膜会破裂的倾向。在可流动含硅层后的可压缩覆盖层也已经被确定可减少破裂。可单独地或组合地利用可压缩衬垫层与可压缩覆盖层来减少破裂。此外，在所公开的实施例中，已经确定可压缩覆盖层可使得氮化硅的下伏层(underlying layer)被转变成氧化硅层。
不将权利要求书的范围限制到假设的工艺机构，包括可压缩衬垫层与/或可压缩覆盖层被认为在后续处理期间或之后能够稳定化可流动间隙填充氧化硅层。可流动膜可能需要固化作为有所区别的固化步骤或作为在后续处理期间加热膜叠层(包括间隙填充膜)的天然副产物。典型地，间隙填充膜是通过去气(outgas)来减少质量且发展拉伸应力。这样的一层在本说明书中可称为拉伸层。可压缩衬垫层被认为在利用可流动间隙填充氧化硅层来填充间隙之前可稳定沟槽。可压缩衬垫层与/或可压缩覆盖层的存在也可实体地粘附到且稳定间隙填充层。基板的实体弯曲度，整体而言，也可通过可压缩层的存在而减轻，所述可压缩层减少了在固化间隙填充膜期间造成的弯曲且减少了在后续处理期间其拉伸应力。现将描述关于形成氧化硅层的方法与系统的额外细节。
示范性氧化硅形成工艺
图1是流程图，所述流程图示出根据本发明实施例的制造氧化硅膜的方法100中被选择的步骤。方法100包括步骤102，所述步骤102是通过高密度等离子体CVD(HDP-CVD)在基板上沉积氧化硅衬垫层。HDP-CVD是形成氧化硅层的示范性方法，其中所述氧化硅层展现拉伸应力(特别是在复合沉积工艺后一旦冷却基板时)。可使用其它方法(例如PECVD、LP-CVD或熔炉氧化物(furnace oxide))来形成氧化硅可压缩衬垫层，这对于在固化/加热膜叠层期间与之后来抑制所完成的膜叠层中的裂缝形成也是同样有效的。可压缩衬垫层也可以是通过各种技术(包括HDP-CVD、PECVD、LP-CVD)与通过使用高温熔炉来生长的氮化硅。
方法100进一步包括步骤104，所述步骤104是将不含碳的硅前驱物提供给反应腔室。不含碳的硅前驱物可以是，除了其它类型的硅前驱物以外，例如：硅与氮的前驱物、硅与氢的前驱物、或含硅、氮与氢的前驱物。这些前驱物的特定实例可包括诸如H2N(SiH3)、HN(SiH3)2、N(SiH3)3和其它甲硅烷基胺之类的甲硅烷基胺。这些甲硅烷基胺可和额外的气体混合，这些额外的气体作为载气、反应性气体、或二者。这些额外的气体的实例可包括H2、N2、NH3、He、Ar与其它气体。不含碳的硅前驱物的实例还可包括硅烷(SiH4)，独立地或和其它含硅气体(例如N(SiH3)3)、含氢气体(例如H2)、与/或含氮气体(例如N2、NH3)混合。
在步骤106，也可将自由基氮前驱物提供给反应腔室。自由基氮前驱物包含通过激发等离子体中的含氮前驱物所产生的等离子体流出物，并且示范性含氮前驱物可包括N2O、NO、NO2、NH4OH、NH3与N2。自由基氮前驱物可以是在反应腔室外从更稳定的氮前驱物所产生的含氮自由基物种。例如，稳定的氮前驱物化合物(诸如上述所列的)可在反应腔室外的等离子体单元中被活化以形成自由基氮前驱物，所述自由基氮前驱物接着被传送到反应腔室内。所产生的自由基氮前驱物可包含·N、·NH、·NH2等的一种或更多种，并且也可由形成在等离子体中的离子化物种来伴随。在其它实施例中，自由基氮前驱物产生在反应腔室的一个区块中，所述反应腔室的一个区块是从基板处理区域分隔出的，所述前驱物在所述基板处理区域中混合且反应，以在沉积基板(例如半导体晶片)上沉积硅与氮层。自由基氮前驱物还可以由诸如氢气(H2)、氦等的载气来伴随。
在步骤108，在反应腔室中，未激发的不含碳的硅前驱物与自由基氮前驱物混合且反应，以在沉积基板(所述沉积基板具有沟槽形成在所述沉积基板的表面上)上沉积含硅与氮的膜。通过现有技术的间隙填充技术(诸如HDP-CVD)使用较不可流动膜来填充沟槽而不形成空隙或缝隙可能是困难的。沟槽可具有定义了高度对宽度(即H/W)的深宽比(AR)的高度与宽度，所述深宽比显著地大于1∶1(例如5∶1或更大、6∶1或更大、7∶1或更大、8∶1或更大、9∶1或更大、10∶1或更大、11∶1或更大、12∶1或更大等)。在许多例子中，高AR是由于约90nm至约22nm或更小(例如约90nm、65nm、45nm、32nm、22nm、16nm等)的小间隙宽度。
不像常规的氮化硅(Si3N4)膜，被沉积的含硅与氮膜具有可流动特征，可流动特征允许含硅与氮膜可流动到基板的沉积表面上的窄间隙沟槽与其它结构内。由于层是可流动的，所以可填充具有高深宽比的间隙，而不会在填充材料中心的周围产生空隙或缝隙。例如，沉积可流动材料较不可能在间隙完全地被填满前过早地堵塞间隙的顶部。这有助于减少或消除维持在间隙中间的空隙。
可流动性可以是(至少部分地)由于被沉积的膜中的显著氢成分。例如，被沉积的膜可具有硅氮烷类型的Si-NH-Si主链(即Si-N-H膜)。可流动性也可由硅氮烷类型的短链聚合物产生。当硅前驱物与自由基氮前驱物二者都不含碳时，被沉积的含硅与氮膜也为大体上不含碳的。当然，“不含碳”并不一定意味着膜甚至缺乏微量的碳。碳污染物可存在于前驱物材料中，所述碳污染物找到其进入被沉积的含硅与氮膜的途径。然而，这些碳杂质的量是比在具有碳组成部分的硅前驱物(例如TEOS、TMDSO等)中所发现的少多了。
在沉积了含硅与氮层后，在步骤110中，沉积基板可被引入到含氧气氛。当引入到含氧气氛时，沉积基板可保持在反应腔室中，或者，基板可被传送到引入有含氧气氛的不同腔室。含氧气氛可包含一种或更多种含氧气体，所述含氧气体诸如是分子氧(O2)、臭氧(O3)、水蒸气(H2O)、与氧化氮(NO、NO2等)和其它含氧气体。含氧气氛还可包含自由基氧与羟基物种，诸如原子氧(O)、氢氧化物(OH)等，所述自由基氧与羟基物种可远程地被产生且被传送到基板腔室内。也可存在含氧物种的离子。
在步骤110，含氧气氛提供氧以将含硅与氮膜转变成氧化硅(SiO2)膜。如上文所述，含硅与氮膜中缺乏碳显著地造成在最终氧化硅膜中形成较少孔隙。从沉积到退火的净收缩是通过沉积可流动含硅与氮膜且将其转变成氧化硅(相较于起始沉积可流动含硅与氧膜)来减少。在转变工艺期间，基板温度可以为约25℃至约1100℃C(例如约200℃、约300℃、约400℃、约500℃、约600℃、约700℃、约800℃、约900℃、约1000℃等)。在许多情况下，体积减少是足够微小(例如约15vol.％或更小)以避免后热处理步骤来填充、修复或消除因收缩的氧化硅而形成在间隙中的空间。在实施例中，转变可以两部分发生。这两部分转变可包括低温臭氧固化以起始氧化，接着在含氧环境中进行高温退火。
图1的工艺描述了这样一种工艺，在所述工艺中氧化硅是通过先沉积含硅与氮层且接着将此层转变成氧化硅来形成的。在其它实施例中，被沉积的膜是通过自由基氧前驱物以及还没由等离子体激发的含碳前驱物来产生。然后，被沉积的膜将会是含硅与氧膜，其在后续处理期间(相较于涉及含硅与氮膜的工艺)可能经历更多收缩。没通过等离子体的示范性含碳前驱物可包含TMOS、TriMOS、TEOS、OMCTS、HMDS、TMCTR、TMCTS、OMTS、TMS、HMDSO、和/或TMDSO。自由基氧前驱物包含通过激发等离子体中的含氧前驱物所产生的等离子体流出物，并且示范性含氧前驱物可包含O2、O3、N2O、NO、NO2、H2O2、H2O与NH4OH。以这种方式沉积的膜中的破裂也可通过使用在本发明描述的可压缩衬垫层与覆盖层来减少。
实施例可包括具有不同温度与气氛的多个加热阶段。例如，可在较低第一温度且在包含蒸汽(H2O)的气氛中执行第一加热阶段，可在较高第二温度且在实质上缺乏水蒸气的干的含氧气氛中执行第二加热阶段。也可在非含氧气氛(例如干N2、He、Ar等)中执行第三加热阶段。
现参照图2，示出了另一个流程图，所述流程图表示根据本发明实施例的在沟槽中形成氧化硅膜的方法200中被选择的步骤。方法200可包括传送具有表面沟槽的基板到基板处理区域内。沟槽可用来决定形成在基板上的器件部件(例如晶体管)的间隔与结构。方法200包括操作202，所述操作202是提供不含碳的硅前驱物到反应腔室。不含碳的硅前驱物结合图1讨论。在操作204，如参照图1所描述的，将自由基氮前驱物提供给反应腔室。再次地，替代性实施例涉及引入未激发的含碳前驱物与自由基氧前驱物，以形成可流动含硅与氧膜，所述可流动含硅与氧膜在后续处理期间会呈现更多的收缩。
不含碳的硅前驱物与自由基氮前驱物混合且反应以在沉积基板上沉积可流动含硅与氮膜(操作206)。膜的可流动本质促进表面沟槽的填充，其中使用以现有技术的间隙填充技术(诸如HDP-CVD)来制造的较不可流动膜是难以完全地填满这些沟槽。在沉积后，臭氧流动到反应区域内且基板被加热到相当低的温度，以起始氧化且将含硅与氮膜转变成二氧化硅(操作207)。
接着，在操作208，可压缩覆盖层被沉积在被固化的膜上方，所述被固化的膜含有硅、氧与可能的氮。一种在可压缩应变下沉积覆盖层的方式是以HDP-CVD来沉积，类似沉积图1的衬垫层的方法。可使得覆盖层比衬垫层更厚，这是因为沟槽在工艺中在此点大量地被填充。可压缩覆盖层被整合到工艺流程中，并且由于可压缩覆盖层所提供的额外材料，可致使更薄可流动膜的使用。在一些实施例中，沟槽没有被间隙填充层完全地填满，在此情况下，可压缩覆盖层填充一些沟槽体积。再次地，可使用其它方法(例如PECVD、LP-CVD、熔炉氧化物)来制造可压缩覆盖层，这对于在退火膜叠层期间与之后来抑制所完成的膜叠层中的裂缝形成是同样有效的。可压缩覆盖层也可以是通过各种技术(包括HDP-CVD、PECVD、LP-CVD)与通过使用高温熔炉来生长的氮化硅。
在操作210，在沉积了可压缩覆盖层后，将沉积基板引入到含氧气氛中。再次地，沉积基板可维持在引入有含氧气氛的反应腔室中，或者，基板可被传送到引入有含氧气氛的不同腔室中。含氧气氛如参照图1所描述的。含氧气氛提供氧以完成将含硅与氮膜转变成氧化硅的转变，其中所述转变是在固化期间起始。已经发现尽管存在有可压缩覆盖层，转变会进行。在含氧气氛中加热被固化的含硅与氮层，再次地在基板上与在基板间隙中形成氧化硅层。相较于在热处理步骤前利用含碳前驱物形成的类似层(在层中具有显著量的碳)，氧化硅层具有更少的孔隙与更少的体积减少。在所公开的实施例中，可结合图1的可压缩衬垫层与图2的可压缩覆盖层，以进一步保护膜叠层免于发展裂缝。
图3是另一个流程图，所述流程图表示根据本发明实施例的制造氧化硅膜的额外示范性方法300中被选择的步骤。方法300包括操作302，所述操作302是通过高密度等离子体CVD(HDP-CVD)在基板上沉积氧化硅衬垫层。可使用其它方法(例如PECVD、LP-CVD、与熔炉氧化物)来形成可压缩衬垫层，只要此替代性方法形成的可压缩衬垫层可有助于在处理工序中的固化与加热步骤期间与之后减少裂缝。方法300进一步包括操作304，所述操作304是将含硅前驱物与自由基氧前驱物引入到基板处理区域内。
自由基氧前驱物可在等离子体CVD沉积腔室外从例如稳定的含氧气体(例如分子氧(O2)、臭氧(O3)、水蒸气、过氧化氢(H2O2)与氧化氮(例如N2O、NO2等))来产生。如同图1和图2的方法，也可使用稳定气体的混合物来形成自由基物种。自由基氧也可产生在反应腔室的分离区块中，所述反应腔室的分离区块是从基板处理区域分隔出来的。在此分离区块中，稳定的含氧气体由远离基板处理区域的等离子体来激发。分隔物可具有穿孔且在可本发明中称为喷头。
在所公开的实施例中，含硅前驱物被直接地引入到基板处理区域内以避免等离子体激发。含硅前驱物可包含有机硅烷化合物，所述有机硅烷化合物包括TMOS、TriMOS、TEOS、OMCTS、HMDS、TMCTR、TMCTS、OMTS、TMS、TMDSO及其它。含硅前驱物也可包含不具有碳的硅化合物，诸如硅烷、乙硅烷等。如果被沉积的氧化物膜是掺杂氧化物膜，则可使用掺杂剂前驱物(诸如TEB、TMB、B2H6、TEPO、PH3、P2H6、TMP以及其它硼与磷掺杂剂)。掺杂剂也可用在图1至图2所讨论的方法。
在操作306，在反应腔室中，硅前驱物与自由基氮前驱物混合且反应，以在沉积基板(在所述沉积基板表面中形成有沟槽)上沉积含硅与氧的膜。沟槽可具有定义了高度对宽度(即H/W)的深宽比(AR)的高度与宽度，所述深宽比显著地大于1∶1(例如5∶1或更大、6∶1或更大、7∶1或更大、8∶1或更大、9∶1或更大、10∶1或更大、11∶1或更大、12∶1或更大等)。在许多例子中，高AR是由于约90nm至约22nm或更小(例如约90nm、65nm、45nm、32nm、22nm、16nm等)的小间隙宽度。
利用这些方法所制造的膜是起初可流动的，这使得其能流动到基板的沉积表面上的窄间隙或沟槽与其它结构内。膜流动到具有高深宽比的间隙内，而不会在填充材料中心的周围产生空隙或弱缝隙。例如，沉积可流动材料较不可能在间隙完全地被填满前过早地堵塞间隙的顶部而在间隙中间留下空隙。
在操作308，在沉积了含硅与氧膜后，在含硅与氮膜的上方沉积可压缩覆盖层。一种在可压缩应变下沉积覆盖层的方式是利用HDP-CVD来沉积，类似沉积图1的衬垫层与图2的覆盖层的方法。可使得覆盖层比图1与操作302的衬垫层更厚，这是因为沟槽在工艺中在此点大量地被填充。可压缩覆盖层被整合到工艺流程中，并且由于可压缩覆盖层所提供的额外材料，可致使更薄可流动膜的使用。在替代性实施例中，使用衬垫层而不使用覆盖层，并且使用覆盖层而不使用衬垫层。
在操作310，膜叠层被固化以去除一些残留在膜中的流动试剂。尽管存在有可压缩覆盖层，任何从固化膜的去气(outgas)会发生。固化步骤可以不是必要的，取决于期望的最终膜叠层的性质。在其它实施例中，膜是在进一步处理(不可避免地涉及了一些基板加热)的过程中被固化。
现在讨论在本发明中出现的可压缩层的一般性质，根据所公开的实施例的可压缩衬垫层比沟槽宽度的一半更薄，以为了允许后续沉积的可流动膜能够流动到剩余的间隙内。在不同实施例中，衬垫层的厚度可小于或约小于或约
Figure BPA00001545662600092
小于或约
Figure BPA00001545662600093
或小于或约
Figure BPA00001545662600094
可压缩衬垫层必须足够厚，以给沟槽提供必要的稳定性，并且在不同实施例中，所述可压缩衬垫层的厚度可大于或约
Figure BPA00001545662600095
大于或约
Figure BPA00001545662600096
大于或约
Figure BPA00001545662600097
大于或约
Figure BPA00001545662600098
任何上限可和任何下限结合以形成额外的实施例。
在本发明中出现的可压缩覆盖层具有比可压缩衬垫层更大的自由度(latitude)，这是因为所述可压缩覆盖层不会受到基板沟槽的宽度所限制。在不同实施例中，可压缩覆盖层的厚度可大于或约大于或约
Figure BPA00001545662600102
大于或约
Figure BPA00001545662600103
大于或约
Figure BPA00001545662600104
大于或约
Figure BPA00001545662600105
或大于或约
Figure BPA00001545662600106
典型地，可压缩覆盖层的厚度的上限是由涉及可流动层的最终厚度的特定工艺流程来决定。
HDP-CVD是可用来形成在本发明所描述的可压缩衬垫与可压缩覆盖层的一种方法。在HDP-CVD沉积期间，基板可位于与用来沉积可流动层的腔室不同的腔室中。示范性沉积腔室是可从美国加州圣克拉拉市的应用材料公司购得的Ultima HDP腔室。当处理300mm晶片的基板时，基板在沉积可压缩膜期间可被维持在低于约500℃或在约300℃与约400℃之间，并且所施加的总源等离子体RF功率可以是5000W至10,000W(排除偏置功率)。基板偏置功率可以是在2000W与7000W之间。更高的偏置功率与在衬垫和覆盖层中更高的可压缩应力有关。可使用除了Ultima HDP以外的腔室，其具有操作条件的转换，所述转换可从处理工具供应商获得或可仅为本领域普通技术人员所熟知。非偏置RF功率发生器所发出的频率可以为约2MHz，而偏置RF功率发生器所发出的频率可以为约13.56MHz。在HDP-CVD期间，各种含氧与含硅源可流动到处理区域内，并且典型的前驱物包括O2与SiH4。在使用这两种前驱物的情况中，O2∶SiH4的流速比例可以为在约0.25∶1与约1∶1之间。
在沉积含硅膜(在上述实例中包含氮与/或碳)期间，可进行可流动膜生长，同时基板温度被维持在相当低的温度。在沉积期间，可流动氧化物膜可在低温下被沉积在基板表面上，其中所述低温是通过冷却基板来维持。基座可包括在基座轴内的加热与/或冷却导管，其在不同实施例中可将基座与基板的温度设定在约-40℃与约200。C之间、在约100℃与约160℃之间、小于约100℃、或小于约40℃。
在可流动膜的生长期间，腔室等离子体区域或基板处理区域中的压力可小于或约100Torr、小于或约50Torr、小于或约20Torr、小于或约10Torr、小于或约5Torr。在不同实施例中，在任一个区域或两个区域中之的压力可大于或约0.25Torr、大于或约0.5Torr、大于或约1Torr、大于或约2Torr、大于或约5Torr。根据所公开的实施例，压力的每一下限可与任何上限结合以形成额外的适当压力范围。
在可流动膜的生长期间(以为了制造自由基氧与/或自由基氮前驱物)，腔室等离子体区域中的等离子体条件在不同实施例中可包括在约3000W与约15,000W之间、在约400W与约10,000W之间、或在约5000W与约8000W之间的RF功率。
示范性基板处理系统
沉积系统的实施例可被并入到更大的制造系统以制造集成电路芯片。图4示出根据所公开的实施例的沉积、烘烤与固化腔室的一个这样的系统400。在此图中，一对FOUP(前开式晶片盒(front opening unified pod))402供应基板(例如300mm直径晶片)，这些基板由机械臂404接收且在被放置到基板处理腔室408a至408f的一个之前被放置到低压固持区域406内。第二机械臂410可用来从固持区域406将基板晶片传送到处理腔室408a至408f且返回。
处理腔室408a至408f可包括用以沉积、退火、固化与/或蚀刻基板晶片上的可流动介电膜的一个或更多个系统部件。在一个组态中，两对处理腔室(例如，408c和408d，以及408e和408f)可用以沉积可流动介电材料在基板上，并且第三对处理腔室(例如408a和408b)可用用来退火被沉积的电介质。在另一个组态中，这相同的两对处理腔室(例如，408c和408d，以及408e-和408f)可被配置为沉积且退火基板上的可流动介电膜，而第三对处理腔室(例如408a和408b)可用于被沉积的膜的UV或电子束固化。在又一个组态中，所有三对处理腔室(例如408a至408f)可配置为沉积、固化可流动介电膜在基板上。在再一个组态中，两对处理腔室(例如，408c和408d，以及408e和408f)可均用于可流动电介质的沉积以及UV或电子束固化，而第三对处理腔室(例如408a和408b)可用以退火介电膜。可了解，用于可流动介电膜的沉积、退火与固化腔室的额外组态可由系统400设想出。
此外，处理腔室408a至408f的一个或更多个可被配置成湿法处理腔室。这些处理腔室包括在包含湿气的气氛中加热可流动介电膜。因此，系统400的实施例可包括湿法处理腔室408a和408b与退火处理腔室408c和408d，以对被沉积的介电膜执行湿法与干法退火。
图5A是根据所公开的实施例的基板处理腔室500。远程等离子体系统(RPS))510可处理气体，所述气体接着穿过气体入口组件511。气体入口组件511内可看见两个分离的气体供应通道。第一通道512承载通过远程等离子体系统RPS 510的气体，而第二通道513绕过RPS 500。在所公开的实施例中，第一通道512可用于工艺气体，并且第二通道513可用于处理气体。盖(或导电顶部)521与穿孔分隔物553显示在盖521与穿孔分隔物553之间具有绝缘环524，绝缘环524允许AC电位相对于穿孔分隔物553被施加到盖521。工艺气体穿过第一通道512到腔室等离子体区域520内，并且可独立地由腔室等离子体区域520中的等离子体或和RPS 510的组合来激发。腔室等离子体区域520与/或RPS 510的组合在本发明种可称为远程等离子体系统。穿孔分隔物(也称为喷头)553将腔室等离子体区域520与喷头553下方的基板处理区域570分离。喷头553允许等离子体存在于腔室等离子体区域520中以避免直接地激发基板处理区域570中的气体，同时仍允许被激发的物种可从腔室等离子体区域520行进到基板处理区域570内。
喷头553位于腔室等离子体区域520与基板处理区域570之间，并且允许腔室等离子体区域520中建立的等离子体流出物(前驱物或其它气体的激发衍生物)穿过多个横跨板厚度的穿孔556。喷头553还具有一个或更多个中空容积551，这些中空容积551可被填充以蒸气或气体形式的前驱物(诸如含硅前驱物)且其穿过小孔555到基板处理区域570内但不直接到腔室等离子体区域520内。在本公开的实施例中，喷头553比穿孔556的最小直径550的长度更厚。为了维持激发物种从腔室等离子体区域520渗透到基板处理区域570的显著浓度，穿孔的最小直径550的长度526可由形成穿孔556通过喷头553的较大直径部分来限制。在所公开的实施例中，穿孔556的最小直径550的长度可和穿孔556的最小直径具有相同数量级或更小的数量级。
在所示出的实施例中，一旦通过腔室等离子体区域520中的等离子体所激发，喷头553可分配(经由穿孔556)含有氧、氢与/或氮的工艺气体与/或这样工艺气体的等离子体流出物。在实施例中，通过第一通道512引入到RPS 510与/或腔室等离子体区域520的工艺气体可含有氧(O2)、臭氧(O3)、N2O、NO、NO2、NH3、NxHy(包括N2H4)、硅烷、乙硅烷、TSA、与DSA的一种或多种。工艺气体还可包括载气，所述载气诸如是氦、氩、氮(N2)等。第二通道513也可输送工艺气体与/或载气、与/或用来从生长或所沉积的膜去除不希望的成分的膜固化气体。等离子体流出物可包含工艺气体的离子化或中性衍生物，并且在在发明中可称为自由基氧前驱物与/或自由基氮前驱物(其参照所引入的工艺气体的原子构成物)。
在实施例中，穿孔556的数量可在约60个与约2000个之间。穿孔556可具有各种形状，但是为最容易制造的圆形。在所公开的实施例中，穿孔556的最小直径550可为在约0.5mm与约20mm之间或在约1mm与约6mm之间。还有选择穿孔的截面形状的自由，所述截面形状可以是圆锥形、圆柱形、或这两种形状的组合。在不同实施例中，用来将气体引入到基板处理区域570内的小孔555的数量可在约100个与约5000个之间或在约500个与约2000个之间。小孔555的直径可为在约0.1mm与约2mm之间。
图5B是根据所公开的实施例与处理腔室共同使用的喷头553的仰视图。喷头553与图5A示出的喷头相应。穿孔556被描绘为在喷头553的底部具有较大内径(ID)且在顶部具有较小内径(ID)。小孔555实质上均匀地散布在喷头表面的上方(甚至在这些穿孔556之间)，这有助于提供比在本发明描述的其它实施例更均匀的混合。
当穿过喷头553的穿孔556而达到的等离子体流出物和穿过小孔555(源自中空容积551)而到达的含硅前驱物结合时，示范性膜被建立在基板处理区域570中由基座(未示出)所支撑的基板上。尽管基板处理区域570可设置为支持用于其它工艺(诸如固化)的等离子体，所述示范性膜的生长期间不存在有等离子体。
可在喷头553上方的腔室等离子体区域520中或喷头553下方的基板处理区域570中点燃等离子体。典型地，在沉积期间，射频(RF)范围中的AC电压被施加在处理腔室的导电顶部521与喷头553之间，以在腔室等离子体区域520中点燃等离子体。当基板处理区域570中的底等离子体被启动以固化膜或清洁基板处理区域570的内表面时，顶等离子体被保持在低功率或没有功率。基板处理区域570中的等离子体是通过施加AC电压于喷头553与腔室的基座或底部来点燃。当等离子体存在时，可将清洁气体引入到基板处理区域570内。
基板处理系统由系统控制器来控制。在示范性实施例中，系统控制器包括硬盘驱动器、软盘驱动器以及处理器。处理器含有单板计算机(single-boardcomputer)(SBC)、模拟与数字输入/输出板、接口板以及步进电机控制器板。CVD系统的各部件符合欧洲通用模块(Versa Modular European)(VME)标准，其定义了板、卡盒(card cage)、以及连接器尺寸和类型。VME标准也将总线结构定义成16位数据总线与24位地址总线。
系统控制器控制CVD机器的所有活动。系统控制器执行系统控制软件，所述系统控制软件是存储在计算机可读介质中的计算机程序。优选地，介质是硬盘驱动器，但介质也可以是其它类型的存储器。计算机程序包括指令组，所述指令组可命令特定工艺的时间点、气体混合、腔室压力、腔室温度、RF功率水平、载座位置与其它参数。存储在其它存储器器件(包括例如软盘或其它适当的驱动器)上的其它计算机程序也可用来指示系统控制器。
可使用由系统控制器执行的计算机程序产品来实现用来在基板上沉积膜叠层的工艺或用来清洁腔室的工艺。计算机程序代码能够以任何常规的计算机可读编程语言来撰写：例如，68000汇编语言、C、C++、Pascal、Fortran或其它。适当的程序代码是使用常规的文字编辑器被转成单一文档或多个文档，并且被存储或内嵌在计算机可执行介质(诸如计算机的存储器系统)中。如果转换的代码文本是属于高级语言，代码被编译，并且最终的编译器代码接着链接到预编译的微软视窗
Figure BPA00001545662600141
库例程的目标代码。为了执行链接的编译的目标代码，系统使用者调用目标代码，使计算机系统将存储器中的代码载入。然后，CPU读取且执行所述代码，以实施程序中所指定的任务。
使用者与控制器之间的界面是经由平板触摸感应监视器。在使用两个监视器的优选实施例中，一个监视器是安装在清洁室壁中以供操作者使用，而另一个监视器是安装在壁后面以供维修技术员使用。这两个监视器可同时地显示相同的信息，在这种情况下只有一个监视器会在一个时间点接收输入。为了选择特定的显示屏或功能，操作者触摸所述碰触感应监视器的指定区域。被触摸的区域会改变其突出颜色，或会显示新菜单或显示屏，确认了操作者与触摸感应监视器之间的通信。可使用其它装置(诸如键盘、鼠标、或其它指向或通信装置)来取代或添加到所述触摸感应监视器，以允许使用者和系统控制器通信。
在本发明使用的“基板”可以是具有或不具有其上形成有层的支撑基板。支撑基板可以是绝缘体或具有各种掺杂浓度和轮廓的半导体，并且可以是例如用来制造集成电路的类型的半导体基板。在本发明使用的处于“激发状态”的气体描述这样一种气体，其中至少一些气体分子是处于振动地激发、解离与/或离子化状态。气体可以是两种或更多种气体的组合。术语沟槽是在说明书中使用而没有暗示被蚀刻的几何形状必须具有大的水平深宽比。从表面的上方观察，沟槽可以是圆形、椭圆形、多边形、矩形或各种其它形状。
已经描述了一些实施例，本领域技术人员可了解的是，在不脱离本发明的精神下，可使用各种变型、替代性结构与等同物。此外，没有描述许多已知的工艺与元件，以为了避免不必要地模糊化本发明。因此，上述说明不应被视为限制本发明的范围。
当提供数值的范围时，应了解，也特定地公开了所述范围的上限与下限之间的各中间数值(达下限单位的十分之一，除非文中清楚地指出)。任何所记载数值或所记载范围内的中间数值与任何其它所记载数值或在所记载范围内的中间数值之间的各更小范围被涵盖。这些更小范围的上限与下限可独立地被包括在所述范围内或被排除所述范围外，并且包括有任一限制、没有包括限制、或二者的各范围也被涵盖在本发明中，受到任何特定地排除在所记载范围外的限制。所记载范围包括限制的一个或两个时，排除这些所包括的限制的任一个或两个的范围也被包括。
如在本发明所使用的且如所附权利要求书中所示，单数形式“一”、“一个”与“所述”包括多个参照物，除非文中清楚地指明。因此，例如，“一种工艺”包括多个这样的工艺，并且“所述前驱物”包括本领域技术人员所熟知的一个或更多个前驱物及其等同物，以及诸如此类的。
此外，在说明书中和所附权利要求书中使用的术语“包含”与“包括”意在指明所记载特征、整体、部件或步骤的存在，但其不会排除一个或更多个其它特征、整体、部件、步骤、动作或群的存在或添加。

Claims (22)

1.一种形成氧化硅层于基板上的方法，所述基板含有沟槽，所述方法包括以下步骤：
传送所述基板到基板处理腔室内；
形成可压缩衬垫层于所述基板上且在所述沟槽中；
形成介电层于所述基板上且在所述沟槽中，其中所述介电层是起初可流动的；以及
固化所述介电层。
2.如权利要求1所述的方法，其中所述可压缩衬垫层是使用熔炉、PECVD、LP-CVD以及HDP-CVD的一个来沉积的。
3.如权利要求1所述的方法，进一步包括以下步骤：
在固化所述介电层之前，形成可压缩覆盖层于所述介电层上方。
4.如权利要求1所述的方法，其中所述沟槽具有约50nm或更小的宽度。
5.一种形成氧化硅层于基板的方法，所述基板含有沟槽，所述方法包括以下步骤：
传送所述基板到基板处理腔室中的基板处理区域内；
将等离子体前驱物流动到远程等离子体区域内，以形成等离子体流出物；
在所述基板处理区域中结合所述等离子体流出物和含硅前驱物的流动，其中所述含硅前驱物的流动还没由等离子体激发；
形成含硅与氧层于所述基板上且在所述沟槽中；
形成可压缩覆盖层于所述含硅与氧层上方；以及
固化所述含硅与氧层。
6.如权利要求5所述的方法，进一步包括以下步骤：
在形成所述含硅与氧层于所述基板上之前，形成可压缩衬垫层。
7.如权利要求5所述的方法，其中所述含硅前驱物包含含硅与碳前驱物，并且所述等离子体流出物包含自由基氧前驱物。
8.如权利要求7所述的方法，其中所述含硅与碳前驱物包含TMOS、TriMOS、TEOS、OMCTS、HMDS、TMCTR、TMCTS、OMTS、TMS、HMDSO以及TMDSO的至少一种，并且所述等离子体前驱物包含O2、O3、N2O、NO、NO2、H2O2、H2O以及NH4OH的至少一种。
9.如权利要求5所述的方法，其中所述沟槽具有约50nm或更小的宽度。
10.如权利要求5所述的方法，其中所述含硅前驱物包含含硅与氮前驱物，所述等离子体流出物包含自由基氮前驱物，并且所述方法进一步以下步骤：
在含臭氧气氛中加热所述基板，以至少部分地将被沉积的膜转变成所述含硅与氧层。
11.如权利要求5所述的方法，其中所述含硅与氮前驱物包含H2N(SiH3)、HN(SiH3)2以及N(SiH3)3的至少一种，并且所述等离子体前驱物包含NH3、NH4OH、N2O、NO、NO2、N2以及H2的至少一种。
12.如权利要求5所述的方法，其中所述远程等离子体区域是在所述基板处理腔室内且通过喷头与所述基板处理腔室分离。
13.如权利要求5所述的方法，其中所述可压缩覆盖层是使用熔炉、PECVD、LP-CVD以及HDP-CVD的一个来沉积的。
14.一种形成氧化硅层于基板的方法，所述基板含有沟槽，所述方法包括以下步骤：
传送所述基板到基板处理腔室中的基板处理区域内；
将等离子体前驱物流动到远程等离子体区域内，以形成等离子体流出物；
在所述基板处理区域中结合所述等离子体流出物和含硅前驱物的流动，其中所述含硅前驱物的流动还没由等离子体激发；
形成含硅与氮层于所述基板上且在所述沟槽中；
形成可压缩覆盖层于所述含硅与氮层上方；以及
在含氧气氛中加热所述基板，以将所述不含碳的含硅与氮层转变成所述氧化硅层。
15.如权利要求14所述的方法，进一步包括以下步骤：
在形成所述含硅与氮层于所述基板上之前，形成可压缩衬垫层。
16.如权利要求14所述的方法，进一步包括以下步骤：
在形成所述可压缩覆盖层之前，在含臭氧气氛中固化所述含硅与氮层。
17.如权利要求14所述的方法，其中所述含硅前驱物包含含硅与氮前驱物，并且所述等离子体流出物包含自由基氮前驱物。
18.如权利要求17所述的方法，其中所述含硅与氮前驱物包含H2N(SiH3)、HN(SiH3)2以及N(SiH3)3的至少一种，并且所述等离子体前驱物包含N2O、NO、NO2、NH4OH、NH3、N2以及H2的至少一种。
19.如权利要求14所述的方法，其中所述含氧气氛包含O2、O3以及H2O的至少一种。
20.如权利要求14所述的方法，其中所述沟槽具有约50nm或更小的宽度。
21.如权利要求14所述的方法，其中所述远程等离子体区域是在所述基板处理腔室内且通过喷头与所述基板处理腔室分离。
22.如权利要求14所述的方法，其中所述可压缩覆盖层是使用熔炉、PECVD、LP-CVD以及HDP-CVD的一个来沉积的。
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