SG10201803376RA - Atomic layer etch, reactive precursors and energetic sources for patterning applications - Google Patents

Atomic layer etch, reactive precursors and energetic sources for patterning applications

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Publication number
SG10201803376RA
SG10201803376RA SG10201803376RA SG10201803376RA SG10201803376RA SG 10201803376R A SG10201803376R A SG 10201803376RA SG 10201803376R A SG10201803376R A SG 10201803376RA SG 10201803376R A SG10201803376R A SG 10201803376RA SG 10201803376R A SG10201803376R A SG 10201803376RA
Authority
SG
Singapore
Prior art keywords
carbon
containing material
atomic layer
patterning
methods
Prior art date
Application number
SG10201803376RA
Inventor
Adrien Lavoie
Pulkit Agarwal
Purushottam Kumar
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/582,359 external-priority patent/US9997371B1/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201803376RA publication Critical patent/SG10201803376RA/en

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)

Abstract

ATOMIC LAYER ETCH, REACTIVE PRECURSORS AND ENERGETIC SOURCES FOR PATTERNING APPLICATIONS Methods and apparatuses for patterning carbon-containing material over a layer to be etched are provided herein. Methods involve trimming carbon-containing material by atomic layer etching including exposing the carbon-containing material to an oxygen-containing gas without a plasma to modify a surface of the carbon-containing material and exposing the carbon-containing material to an inert gas and igniting a plasma to remove the modified surface of the carbon-containing material. Methods may be used for multiple patterning techniques such as double and quad patterning. Methods also include depositing a conformal film over a carbon-containing material patterned using atomic layer etching without breaking vacuum. The oxygen-containing gas may be one containing any one or more of oxygen, ozone, water vapor, nitrous oxide, carbon monoxide, formic acid vapor and/or carbon dioxide. The apparatus may include alternative energetic sources including and/or 13MHz capacitively coupled plasmas; and/or inductively coupled plasmas e.g., remote plasmas. Fig. 2 42
SG10201803376RA 2017-04-24 2018-04-23 Atomic layer etch, reactive precursors and energetic sources for patterning applications SG10201803376RA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762489113P 2017-04-24 2017-04-24
US15/582,359 US9997371B1 (en) 2017-04-24 2017-04-28 Atomic layer etch methods and hardware for patterning applications
US201862624520P 2018-01-31 2018-01-31
US15/955,099 US10832909B2 (en) 2017-04-24 2018-04-17 Atomic layer etch, reactive precursors and energetic sources for patterning applications

Publications (1)

Publication Number Publication Date
SG10201803376RA true SG10201803376RA (en) 2018-11-29

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SG10201803376RA SG10201803376RA (en) 2017-04-24 2018-04-23 Atomic layer etch, reactive precursors and energetic sources for patterning applications

Country Status (6)

Country Link
US (1) US10832909B2 (en)
JP (2) JP7165506B2 (en)
KR (1) KR102625972B1 (en)
CN (1) CN108847386B (en)
SG (1) SG10201803376RA (en)
TW (1) TWI780145B (en)

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