JP4943912B2 - 基板から残渣を除去する方法 - Google Patents

基板から残渣を除去する方法 Download PDF

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Publication number
JP4943912B2
JP4943912B2 JP2007084907A JP2007084907A JP4943912B2 JP 4943912 B2 JP4943912 B2 JP 4943912B2 JP 2007084907 A JP2007084907 A JP 2007084907A JP 2007084907 A JP2007084907 A JP 2007084907A JP 4943912 B2 JP4943912 B2 JP 4943912B2
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JP
Japan
Prior art keywords
substrate
radical
introducing
gas
process gas
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Expired - Fee Related
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JP2007084907A
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English (en)
Japanese (ja)
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JP2007266609A (ja
JP2007266609A5 (enExample
Inventor
バイドヤナサン・バラサブラマニアム
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JP2007266609A publication Critical patent/JP2007266609A/ja
Publication of JP2007266609A5 publication Critical patent/JP2007266609A5/ja
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Publication of JP4943912B2 publication Critical patent/JP4943912B2/ja
Expired - Fee Related legal-status Critical Current
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    • H10P50/287—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H10P70/20—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2007084907A 2006-03-28 2007-03-28 基板から残渣を除去する方法 Expired - Fee Related JP4943912B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/390,192 2006-03-28
US11/390,192 US7759249B2 (en) 2006-03-28 2006-03-28 Method of removing residue from a substrate

Publications (3)

Publication Number Publication Date
JP2007266609A JP2007266609A (ja) 2007-10-11
JP2007266609A5 JP2007266609A5 (enExample) 2010-04-22
JP4943912B2 true JP4943912B2 (ja) 2012-05-30

Family

ID=38559676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007084907A Expired - Fee Related JP4943912B2 (ja) 2006-03-28 2007-03-28 基板から残渣を除去する方法

Country Status (2)

Country Link
US (1) US7759249B2 (enExample)
JP (1) JP4943912B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8057633B2 (en) * 2006-03-28 2011-11-15 Tokyo Electron Limited Post-etch treatment system for removing residue on a substrate
US8715455B2 (en) * 2007-02-06 2014-05-06 Tokyo Electron Limited Multi-zone gas distribution system for a treatment system
WO2010021890A2 (en) * 2008-08-19 2010-02-25 Lam Research Corporation Edge rings for electrostatic chucks
US20100130017A1 (en) * 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
US20120024314A1 (en) * 2010-07-27 2012-02-02 Axcelis Technologies, Inc. Plasma mediated ashing processes
US8562742B2 (en) * 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
JP6005525B2 (ja) * 2010-12-14 2016-10-12 エドワーズ株式会社 排気ポンプに適用可能な固定翼ブレード集合体、及びそれを備えた排気ポンプ
JP5698558B2 (ja) * 2011-02-21 2015-04-08 東京エレクトロン株式会社 基板処理方法及び記憶媒体
KR102036904B1 (ko) * 2012-11-16 2019-10-25 엘지디스플레이 주식회사 액정표시 장치용 어레이 기판의 제조 방법
US9726940B2 (en) * 2013-12-26 2017-08-08 Sharp Kabushiki Kaisha Active matrix substrate manufacturing method, display apparatus manufacturing method, and display apparatus
JP2017143085A (ja) * 2014-06-23 2017-08-17 東京エレクトロン株式会社 グラフェン膜を有する被処理体を処理する方法
US10192717B2 (en) * 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
KR102496037B1 (ko) 2016-01-20 2023-02-06 삼성전자주식회사 플라즈마 식각 방법 및 장치
KR102614944B1 (ko) * 2018-09-26 2023-12-19 도쿄엘렉트론가부시키가이샤 에칭 방법, 에칭 잔사의 제거 방법, 및 기억 매체
JP7287767B2 (ja) * 2018-09-26 2023-06-06 株式会社アルバック ドライエッチング方法
US12261054B2 (en) 2022-08-11 2025-03-25 Tokyo Electron Limited Substrate processing with material modification and removal

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104224A (ja) * 1992-09-22 1994-04-15 Sumitomo Metal Ind Ltd レジスト除去装置及びその使用方法
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US6468490B1 (en) * 2000-06-29 2002-10-22 Applied Materials, Inc. Abatement of fluorine gas from effluent
US6825126B2 (en) * 2002-04-25 2004-11-30 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
US20040086434A1 (en) * 2002-11-04 2004-05-06 Gadgil Pradad N. Apparatus and method for treating objects with radicals generated from plasma
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US20040154743A1 (en) * 2002-11-29 2004-08-12 Savas Stephen E. Apparatus and method for low temperature stripping of photoresist and residues
US7371688B2 (en) * 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
JP4299638B2 (ja) * 2003-10-31 2009-07-22 キヤノン株式会社 基板処理装置および基板処理方法
US20060017043A1 (en) * 2004-07-23 2006-01-26 Dingjun Wu Method for enhancing fluorine utilization
KR100550351B1 (ko) * 2004-09-07 2006-02-08 삼성전자주식회사 반도체 장치의 막 형성방법 및 이를 수행하기 위한 반도체장치의 막 형성 장치
US20070218200A1 (en) * 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system

Also Published As

Publication number Publication date
JP2007266609A (ja) 2007-10-11
US20070231992A1 (en) 2007-10-04
US7759249B2 (en) 2010-07-20

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