JP2009503889A5 - - Google Patents

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Publication number
JP2009503889A5
JP2009503889A5 JP2008524962A JP2008524962A JP2009503889A5 JP 2009503889 A5 JP2009503889 A5 JP 2009503889A5 JP 2008524962 A JP2008524962 A JP 2008524962A JP 2008524962 A JP2008524962 A JP 2008524962A JP 2009503889 A5 JP2009503889 A5 JP 2009503889A5
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JP
Japan
Prior art keywords
introducing
dielectric layer
substrate
containing gas
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008524962A
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English (en)
Japanese (ja)
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JP2009503889A (ja
Filing date
Publication date
Priority claimed from US11/195,854 external-priority patent/US7279427B2/en
Application filed filed Critical
Publication of JP2009503889A publication Critical patent/JP2009503889A/ja
Publication of JP2009503889A5 publication Critical patent/JP2009503889A5/ja
Pending legal-status Critical Current

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JP2008524962A 2005-08-03 2006-05-24 低誘電率膜エッチング後の無損傷アッシングプロセス及びシステム Pending JP2009503889A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/195,854 US7279427B2 (en) 2005-08-03 2005-08-03 Damage-free ashing process and system for post low-k etch
PCT/US2006/019914 WO2007018678A2 (en) 2005-08-03 2006-05-24 Damage-free ashing process and system for post low-k etch

Publications (2)

Publication Number Publication Date
JP2009503889A JP2009503889A (ja) 2009-01-29
JP2009503889A5 true JP2009503889A5 (enExample) 2009-03-26

Family

ID=37718178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008524962A Pending JP2009503889A (ja) 2005-08-03 2006-05-24 低誘電率膜エッチング後の無損傷アッシングプロセス及びシステム

Country Status (6)

Country Link
US (1) US7279427B2 (enExample)
JP (1) JP2009503889A (enExample)
KR (1) KR20080034001A (enExample)
CN (1) CN100595891C (enExample)
TW (1) TWI336107B (enExample)
WO (1) WO2007018678A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100057B2 (ja) * 2006-08-18 2012-12-19 東京エレクトロン株式会社 半導体装置の製造方法
US7595005B2 (en) * 2006-12-11 2009-09-29 Tokyo Electron Limited Method and apparatus for ashing a substrate using carbon dioxide
US7637269B1 (en) 2009-07-29 2009-12-29 Tokyo Electron Limited Low damage method for ashing a substrate using CO2/CO-based process
CN102142393B (zh) * 2010-01-28 2013-07-03 中芯国际集成电路制造(上海)有限公司 互连结构的形成方法
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US9017933B2 (en) * 2010-03-29 2015-04-28 Tokyo Electron Limited Method for integrating low-k dielectrics
US8741775B2 (en) * 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
CN103187360B (zh) * 2011-12-30 2016-01-06 中芯国际集成电路制造(上海)有限公司 形成互连结构的方法
US8592327B2 (en) * 2012-03-07 2013-11-26 Tokyo Electron Limited Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage
CN103545163B (zh) * 2012-07-10 2016-11-16 中芯国际集成电路制造(上海)有限公司 具有氟残留或氯残留的半导体结构的处理方法
US8802572B2 (en) * 2012-07-10 2014-08-12 Applied Materials, Inc. Method of patterning a low-k dielectric film
US9165783B2 (en) 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
CN103871961B (zh) 2012-12-17 2017-08-25 中芯国际集成电路制造(上海)有限公司 互连结构及其制造方法
CN103871959B (zh) 2012-12-17 2017-11-03 中芯国际集成电路制造(上海)有限公司 互连结构及其制造方法
CN103871962B (zh) 2012-12-18 2017-12-29 中芯国际集成电路制造(上海)有限公司 互连结构及其制造方法
FR3000602B1 (fr) * 2012-12-28 2016-06-24 Commissariat A L Energie Atomique Et Aux Energies Alternatives Procede de gravure d'un materiau dielectrique poreux
US9190317B2 (en) 2013-01-10 2015-11-17 Semiconductor Manufacturing International (Shanghai) Corporation Interconnection structures and fabrication method thereof
US8987139B2 (en) * 2013-01-29 2015-03-24 Applied Materials, Inc. Method of patterning a low-k dielectric film
US9385000B2 (en) 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
CN103943555B (zh) * 2014-04-28 2016-11-02 上海华力微电子有限公司 一种有源区制备方法
US10312075B2 (en) * 2015-09-30 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment system and method
US10199223B2 (en) * 2016-01-26 2019-02-05 Asm Ip Holding B.V. Semiconductor device fabrication using etch stop layer
CN109742019B (zh) * 2019-01-21 2019-10-01 广东工业大学 一种利用紫外激光加工干法刻蚀中硬掩膜板的方法
JP7296093B2 (ja) * 2019-02-04 2023-06-22 国立大学法人東海国立大学機構 窒化炭素膜の製造方法および窒化炭素被覆体の製造方法
US20230268223A1 (en) * 2022-02-24 2023-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3193265B2 (ja) 1995-05-20 2001-07-30 東京エレクトロン株式会社 プラズマエッチング装置
JP2001077086A (ja) * 1999-08-31 2001-03-23 Oki Electric Ind Co Ltd 半導体装置のドライエッチング方法
US6967173B2 (en) * 2000-11-15 2005-11-22 Texas Instruments Incorporated Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials
US6849559B2 (en) * 2002-04-16 2005-02-01 Tokyo Electron Limited Method for removing photoresist and etch residues
AU2003257636A1 (en) * 2002-08-22 2004-03-11 Daikin Industries, Ltd. Removing solution
JP2004158691A (ja) * 2002-11-07 2004-06-03 Yac Co Ltd レジスト除去方法
US7344991B2 (en) 2002-12-23 2008-03-18 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
AU2003297861A1 (en) 2002-12-23 2004-07-29 Tokyo Electron Limited Method and apparatus for bilayer photoresist dry development
US7309448B2 (en) * 2003-08-08 2007-12-18 Applied Materials, Inc. Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material
US7176141B2 (en) * 2004-09-07 2007-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma treatment to improve barrier layer performance over porous low-K insulating dielectrics

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