JP2007511099A5 - - Google Patents
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- Publication number
- JP2007511099A5 JP2007511099A5 JP2006539755A JP2006539755A JP2007511099A5 JP 2007511099 A5 JP2007511099 A5 JP 2007511099A5 JP 2006539755 A JP2006539755 A JP 2006539755A JP 2006539755 A JP2006539755 A JP 2006539755A JP 2007511099 A5 JP2007511099 A5 JP 2007511099A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- nitrogen
- photoresist
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 17
- 230000004888 barrier function Effects 0.000 claims 16
- 239000007789 gas Substances 0.000 claims 15
- 229920002120 photoresistant polymer Polymers 0.000 claims 15
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 14
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 14
- 239000000203 mixture Substances 0.000 claims 12
- 230000001590 oxidative effect Effects 0.000 claims 12
- 239000000463 material Substances 0.000 claims 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 10
- 239000001301 oxygen Substances 0.000 claims 10
- 229910052760 oxygen Inorganic materials 0.000 claims 10
- 235000012239 silicon dioxide Nutrition 0.000 claims 7
- 239000000377 silicon dioxide Substances 0.000 claims 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 239000005368 silicate glass Substances 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 239000003989 dielectric material Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 150000004760 silicates Chemical class 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/712,326 US20050101135A1 (en) | 2003-11-12 | 2003-11-12 | Minimizing the loss of barrier materials during photoresist stripping |
| PCT/US2004/037376 WO2005048335A1 (en) | 2003-11-12 | 2004-11-09 | Minimizing the loss of barrier materials during photoresist stripping |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007511099A JP2007511099A (ja) | 2007-04-26 |
| JP2007511099A5 true JP2007511099A5 (enExample) | 2007-10-18 |
Family
ID=34552671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006539755A Pending JP2007511099A (ja) | 2003-11-12 | 2004-11-09 | フォトレジストストリッピングの間のバリヤー物質損失の最小化 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20050101135A1 (enExample) |
| EP (1) | EP1683192A1 (enExample) |
| JP (1) | JP2007511099A (enExample) |
| KR (1) | KR20060123144A (enExample) |
| CN (1) | CN1868039A (enExample) |
| IL (1) | IL174648A0 (enExample) |
| TW (1) | TW200524051A (enExample) |
| WO (1) | WO2005048335A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7517801B1 (en) * | 2003-12-23 | 2009-04-14 | Lam Research Corporation | Method for selectivity control in a plasma processing system |
| US8222155B2 (en) * | 2004-06-29 | 2012-07-17 | Lam Research Corporation | Selectivity control in a plasma processing system |
| US7396769B2 (en) * | 2004-08-02 | 2008-07-08 | Lam Research Corporation | Method for stripping photoresist from etched wafer |
| US7479457B2 (en) * | 2005-09-08 | 2009-01-20 | Lam Research Corporation | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof |
| JP2007180420A (ja) * | 2005-12-28 | 2007-07-12 | Fujitsu Ltd | 半導体装置の製造方法及び磁気ヘッドの製造方法 |
| US7244313B1 (en) * | 2006-03-24 | 2007-07-17 | Applied Materials, Inc. | Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps |
| US7932181B2 (en) * | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
| US20090078675A1 (en) * | 2007-09-26 | 2009-03-26 | Silverbrook Research Pty Ltd | Method of removing photoresist |
| WO2009039551A1 (en) * | 2007-09-26 | 2009-04-02 | Silverbrook Research Pty Ltd | Method of removing photoresist |
| JP5532826B2 (ja) * | 2009-11-04 | 2014-06-25 | 富士通セミコンダクター株式会社 | 半導体素子の製造方法 |
| CN102877041B (zh) * | 2011-07-14 | 2014-11-19 | 中国科学院微电子研究所 | 薄膜沉积方法以及半导体器件制造方法 |
| CN102610511A (zh) * | 2012-03-21 | 2012-07-25 | 中微半导体设备(上海)有限公司 | 光刻胶的去除方法 |
| US8901007B2 (en) * | 2013-01-03 | 2014-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Addition of carboxyl groups plasma during etching for interconnect reliability enhancement |
| US10354860B2 (en) * | 2015-01-29 | 2019-07-16 | Versum Materials Us, Llc | Method and precursors for manufacturing 3D devices |
| JP6523091B2 (ja) | 2015-07-24 | 2019-05-29 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09330911A (ja) * | 1996-06-11 | 1997-12-22 | Toshiba Corp | 半導体装置の製造方法 |
| US6455232B1 (en) * | 1998-04-14 | 2002-09-24 | Applied Materials, Inc. | Method of reducing stop layer loss in a photoresist stripping process using a fluorine scavenger |
| JP3803523B2 (ja) * | 1999-12-28 | 2006-08-02 | 株式会社東芝 | ドライエッチング方法及び半導体装置の製造方法 |
| US6372636B1 (en) * | 2000-06-05 | 2002-04-16 | Chartered Semiconductor Manufacturing Ltd. | Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene |
| US6352921B1 (en) * | 2000-07-19 | 2002-03-05 | Chartered Semiconductor Manufacturing Ltd. | Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization |
| US6479391B2 (en) * | 2000-12-22 | 2002-11-12 | Intel Corporation | Method for making a dual damascene interconnect using a multilayer hard mask |
| US6647994B1 (en) * | 2002-01-02 | 2003-11-18 | Taiwan Semiconductor Manufacturing Company | Method of resist stripping over low-k dielectric material |
| JP4326746B2 (ja) * | 2002-01-07 | 2009-09-09 | 東京エレクトロン株式会社 | プラズマ処理方法 |
-
2003
- 2003-11-12 US US10/712,326 patent/US20050101135A1/en not_active Abandoned
-
2004
- 2004-11-09 KR KR1020067009102A patent/KR20060123144A/ko not_active Withdrawn
- 2004-11-09 JP JP2006539755A patent/JP2007511099A/ja active Pending
- 2004-11-09 CN CNA200480029601XA patent/CN1868039A/zh active Pending
- 2004-11-09 WO PCT/US2004/037376 patent/WO2005048335A1/en not_active Ceased
- 2004-11-09 EP EP04818668A patent/EP1683192A1/en not_active Withdrawn
- 2004-11-10 TW TW093134300A patent/TW200524051A/zh unknown
-
2006
- 2006-03-30 IL IL174648A patent/IL174648A0/en unknown
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