JP2007508698A5 - - Google Patents

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Publication number
JP2007508698A5
JP2007508698A5 JP2006534260A JP2006534260A JP2007508698A5 JP 2007508698 A5 JP2007508698 A5 JP 2007508698A5 JP 2006534260 A JP2006534260 A JP 2006534260A JP 2006534260 A JP2006534260 A JP 2006534260A JP 2007508698 A5 JP2007508698 A5 JP 2007508698A5
Authority
JP
Japan
Prior art keywords
layer
photoresist
osg
etching
stripping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006534260A
Other languages
English (en)
Japanese (ja)
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JP2007508698A (ja
Filing date
Publication date
Priority claimed from US10/680,895 external-priority patent/US7202177B2/en
Application filed filed Critical
Publication of JP2007508698A publication Critical patent/JP2007508698A/ja
Publication of JP2007508698A5 publication Critical patent/JP2007508698A5/ja
Pending legal-status Critical Current

Links

JP2006534260A 2003-10-08 2004-10-05 有機ケイ酸塩ガラスについての一酸化二窒素剥脱方法 Pending JP2007508698A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/680,895 US7202177B2 (en) 2003-10-08 2003-10-08 Nitrous oxide stripping process for organosilicate glass
PCT/US2004/032793 WO2005038892A1 (en) 2003-10-08 2004-10-05 A nitrous oxide stripping process for organosilicate glass

Publications (2)

Publication Number Publication Date
JP2007508698A JP2007508698A (ja) 2007-04-05
JP2007508698A5 true JP2007508698A5 (enExample) 2007-10-18

Family

ID=34422202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006534260A Pending JP2007508698A (ja) 2003-10-08 2004-10-05 有機ケイ酸塩ガラスについての一酸化二窒素剥脱方法

Country Status (7)

Country Link
US (1) US7202177B2 (enExample)
EP (1) EP1671363A4 (enExample)
JP (1) JP2007508698A (enExample)
KR (1) KR101197070B1 (enExample)
CN (1) CN100426469C (enExample)
TW (1) TW200523689A (enExample)
WO (1) WO2005038892A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050136681A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for removing photoresist from a substrate
KR100666881B1 (ko) * 2005-06-10 2007-01-10 삼성전자주식회사 포토레지스트 제거 방법 및 이를 이용한 반도체 소자의제조 방법.
JP5005702B2 (ja) * 2005-11-17 2012-08-22 エヌエックスピー ビー ヴィ 湿度センサー
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
US20110226280A1 (en) * 2008-11-21 2011-09-22 Axcelis Technologies, Inc. Plasma mediated ashing processes
US20100130017A1 (en) * 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
CN101996934B (zh) * 2009-08-20 2012-07-18 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法
JP6960839B2 (ja) * 2017-12-13 2021-11-05 東京エレクトロン株式会社 半導体装置の製造方法
CN115799028B (zh) * 2021-09-10 2025-12-05 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US111041A (en) * 1871-01-17 Improvement in hay-tedders
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
US5910453A (en) * 1996-01-16 1999-06-08 Advanced Micro Devices, Inc. Deep UV anti-reflection coating etch
US5970376A (en) * 1997-12-29 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer
JP2000183040A (ja) * 1998-12-15 2000-06-30 Canon Inc 有機層間絶縁膜エッチング後のレジストアッシング方法
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
US6323121B1 (en) * 2000-05-12 2001-11-27 Taiwan Semiconductor Manufacturing Company Fully dry post-via-etch cleaning method for a damascene process
JP2002118087A (ja) * 2000-06-29 2002-04-19 Dms Co Ltd 紫外線照査装置
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US6413877B1 (en) * 2000-12-22 2002-07-02 Lam Research Corporation Method of preventing damage to organo-silicate-glass materials during resist stripping
US6514860B1 (en) * 2001-01-31 2003-02-04 Advanced Micro Devices, Inc. Integration of organic fill for dual damascene process
US6777344B2 (en) 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
US6566283B1 (en) * 2001-02-15 2003-05-20 Advanced Micro Devices, Inc. Silane treatment of low dielectric constant materials in semiconductor device manufacturing
US20020139771A1 (en) * 2001-02-22 2002-10-03 Ping Jiang Gas switching during an etch process to modulate the characteristics of the etch
US6617257B2 (en) * 2001-03-30 2003-09-09 Lam Research Corporation Method of plasma etching organic antireflective coating
KR100430472B1 (ko) * 2001-07-12 2004-05-10 삼성전자주식회사 듀얼 다마신 공정을 이용한 배선 형성 방법
US6498112B1 (en) * 2001-07-13 2002-12-24 Advanced Micro Devices, Inc. Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films
US6696222B2 (en) * 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
JP2003092349A (ja) * 2001-09-18 2003-03-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003303880A (ja) * 2002-04-10 2003-10-24 Nec Corp 積層層間絶縁膜構造を利用した配線構造およびその製造方法
US7253112B2 (en) * 2002-06-04 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene process
JP2004079901A (ja) * 2002-08-21 2004-03-11 Nec Electronics Corp 半導体装置及びその製造方法
US6720256B1 (en) * 2002-12-04 2004-04-13 Taiwan Semiconductor Manufacturing Company Method of dual damascene patterning
US6916697B2 (en) * 2003-10-08 2005-07-12 Lam Research Corporation Etch back process using nitrous oxide

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