CN100426469C - 用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法 - Google Patents

用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法 Download PDF

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Publication number
CN100426469C
CN100426469C CNB2004800291641A CN200480029164A CN100426469C CN 100426469 C CN100426469 C CN 100426469C CN B2004800291641 A CNB2004800291641 A CN B2004800291641A CN 200480029164 A CN200480029164 A CN 200480029164A CN 100426469 C CN100426469 C CN 100426469C
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China
Prior art keywords
photoresist
layer
organic
etching
nitrous oxide
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Expired - Fee Related
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CNB2004800291641A
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English (en)
Chinese (zh)
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CN1864249A (zh
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拉奥·安纳普勒格德
朱海伦
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
CNB2004800291641A 2003-10-08 2004-10-05 用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法 Expired - Fee Related CN100426469C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/680,895 US7202177B2 (en) 2003-10-08 2003-10-08 Nitrous oxide stripping process for organosilicate glass
US10/680,895 2003-10-08

Publications (2)

Publication Number Publication Date
CN1864249A CN1864249A (zh) 2006-11-15
CN100426469C true CN100426469C (zh) 2008-10-15

Family

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Family Applications (1)

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CNB2004800291641A Expired - Fee Related CN100426469C (zh) 2003-10-08 2004-10-05 用于有机硅化物玻璃的一氧化二氮去除光刻胶的方法

Country Status (7)

Country Link
US (1) US7202177B2 (enExample)
EP (1) EP1671363A4 (enExample)
JP (1) JP2007508698A (enExample)
KR (1) KR101197070B1 (enExample)
CN (1) CN100426469C (enExample)
TW (1) TW200523689A (enExample)
WO (1) WO2005038892A1 (enExample)

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Publication number Priority date Publication date Assignee Title
US20050136681A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for removing photoresist from a substrate
KR100666881B1 (ko) * 2005-06-10 2007-01-10 삼성전자주식회사 포토레지스트 제거 방법 및 이를 이용한 반도체 소자의제조 방법.
JP5005702B2 (ja) * 2005-11-17 2012-08-22 エヌエックスピー ビー ヴィ 湿度センサー
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
US20110226280A1 (en) * 2008-11-21 2011-09-22 Axcelis Technologies, Inc. Plasma mediated ashing processes
US20100130017A1 (en) * 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
CN101996934B (zh) * 2009-08-20 2012-07-18 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法
JP6960839B2 (ja) * 2017-12-13 2021-11-05 東京エレクトロン株式会社 半導体装置の製造方法
CN115799028B (zh) * 2021-09-10 2025-12-05 长鑫存储技术有限公司 半导体结构的制备方法及半导体结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
CN1343001A (zh) * 2000-06-29 2002-04-03 株式会社D.M.S 用于照射紫外线的装置
US20030044725A1 (en) * 2001-07-24 2003-03-06 Chen-Chiu Hsue Dual damascene process using metal hard mask

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US111041A (en) * 1871-01-17 Improvement in hay-tedders
US5910453A (en) * 1996-01-16 1999-06-08 Advanced Micro Devices, Inc. Deep UV anti-reflection coating etch
US5970376A (en) * 1997-12-29 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer
JP2000183040A (ja) * 1998-12-15 2000-06-30 Canon Inc 有機層間絶縁膜エッチング後のレジストアッシング方法
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
US6323121B1 (en) * 2000-05-12 2001-11-27 Taiwan Semiconductor Manufacturing Company Fully dry post-via-etch cleaning method for a damascene process
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US6413877B1 (en) * 2000-12-22 2002-07-02 Lam Research Corporation Method of preventing damage to organo-silicate-glass materials during resist stripping
US6514860B1 (en) * 2001-01-31 2003-02-04 Advanced Micro Devices, Inc. Integration of organic fill for dual damascene process
US6777344B2 (en) 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
US6566283B1 (en) * 2001-02-15 2003-05-20 Advanced Micro Devices, Inc. Silane treatment of low dielectric constant materials in semiconductor device manufacturing
US20020139771A1 (en) * 2001-02-22 2002-10-03 Ping Jiang Gas switching during an etch process to modulate the characteristics of the etch
US6617257B2 (en) * 2001-03-30 2003-09-09 Lam Research Corporation Method of plasma etching organic antireflective coating
KR100430472B1 (ko) * 2001-07-12 2004-05-10 삼성전자주식회사 듀얼 다마신 공정을 이용한 배선 형성 방법
US6498112B1 (en) * 2001-07-13 2002-12-24 Advanced Micro Devices, Inc. Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films
JP2003092349A (ja) * 2001-09-18 2003-03-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003303880A (ja) * 2002-04-10 2003-10-24 Nec Corp 積層層間絶縁膜構造を利用した配線構造およびその製造方法
US7253112B2 (en) * 2002-06-04 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene process
JP2004079901A (ja) * 2002-08-21 2004-03-11 Nec Electronics Corp 半導体装置及びその製造方法
US6720256B1 (en) * 2002-12-04 2004-04-13 Taiwan Semiconductor Manufacturing Company Method of dual damascene patterning
US6916697B2 (en) * 2003-10-08 2005-07-12 Lam Research Corporation Etch back process using nitrous oxide

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126231A (en) * 1990-02-26 1992-06-30 Applied Materials, Inc. Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch
CN1343001A (zh) * 2000-06-29 2002-04-03 株式会社D.M.S 用于照射紫外线的装置
US20030044725A1 (en) * 2001-07-24 2003-03-06 Chen-Chiu Hsue Dual damascene process using metal hard mask

Also Published As

Publication number Publication date
KR101197070B1 (ko) 2012-11-06
US20050079710A1 (en) 2005-04-14
WO2005038892A1 (en) 2005-04-28
EP1671363A1 (en) 2006-06-21
CN1864249A (zh) 2006-11-15
US7202177B2 (en) 2007-04-10
EP1671363A4 (en) 2010-01-13
TW200523689A (en) 2005-07-16
JP2007508698A (ja) 2007-04-05
KR20060107758A (ko) 2006-10-16

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