JP2003196988A5 - - Google Patents

Download PDF

Info

Publication number
JP2003196988A5
JP2003196988A5 JP2001397446A JP2001397446A JP2003196988A5 JP 2003196988 A5 JP2003196988 A5 JP 2003196988A5 JP 2001397446 A JP2001397446 A JP 2001397446A JP 2001397446 A JP2001397446 A JP 2001397446A JP 2003196988 A5 JP2003196988 A5 JP 2003196988A5
Authority
JP
Japan
Prior art keywords
write
memory cell
writing
voltage
nonvolatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001397446A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003196988A (ja
JP3631463B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001397446A external-priority patent/JP3631463B2/ja
Priority to JP2001397446A priority Critical patent/JP3631463B2/ja
Priority to US10/051,372 priority patent/US6643188B2/en
Priority to EP02001104.5A priority patent/EP1324343B1/en
Priority to KR10-2002-0010414A priority patent/KR100467410B1/ko
Priority to TW091103610A priority patent/TW544933B/zh
Priority to CNB2005101164137A priority patent/CN100538903C/zh
Priority to CNB021064520A priority patent/CN100338775C/zh
Publication of JP2003196988A publication Critical patent/JP2003196988A/ja
Priority to US10/656,139 priority patent/US6990019B2/en
Priority to US10/675,946 priority patent/US20040066680A1/en
Priority to US10/871,110 priority patent/US7301806B2/en
Publication of JP2003196988A5 publication Critical patent/JP2003196988A5/ja
Priority to US11/049,535 priority patent/US7088616B2/en
Application granted granted Critical
Publication of JP3631463B2 publication Critical patent/JP3631463B2/ja
Priority to US11/417,185 priority patent/US7286404B2/en
Priority to US11/871,441 priority patent/US7405970B2/en
Priority to US12/168,283 priority patent/US7672168B2/en
Priority to US12/652,418 priority patent/US7864591B2/en
Priority to US12/967,227 priority patent/US8208311B2/en
Priority to US13/482,577 priority patent/US8605511B2/en
Priority to US14/078,195 priority patent/US8929135B2/en
Priority to US14/559,265 priority patent/US9257189B2/en
Priority to US14/983,802 priority patent/US9508422B2/en
Priority to US15/299,255 priority patent/US9734899B2/en
Priority to US15/645,182 priority patent/US9990987B2/en
Priority to US15/973,644 priority patent/US10236058B2/en
Priority to US16/268,726 priority patent/US10706919B2/en
Priority to US16/887,306 priority patent/US11183235B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2001397446A 2001-01-27 2001-12-27 不揮発性半導体記憶装置 Expired - Lifetime JP3631463B2 (ja)

Priority Applications (25)

Application Number Priority Date Filing Date Title
JP2001397446A JP3631463B2 (ja) 2001-12-27 2001-12-27 不揮発性半導体記憶装置
US10/051,372 US6643188B2 (en) 2001-12-27 2002-01-22 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
EP02001104.5A EP1324343B1 (en) 2001-12-27 2002-01-23 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
KR10-2002-0010414A KR100467410B1 (ko) 2001-12-27 2002-02-27 하나의 메모리 셀에 다중치 데이터를 기억시키는 불휘발성반도체 기억 장치
TW091103610A TW544933B (en) 2001-12-27 2002-02-27 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
CNB2005101164137A CN100538903C (zh) 2001-12-27 2002-02-28 非易失性半导体存储器
CNB021064520A CN100338775C (zh) 2001-12-27 2002-02-28 在单个存储单元中存储多值数据的非易失性半导体存储器
US10/656,139 US6990019B2 (en) 2001-12-27 2003-09-08 Nonvolatile semiconductor memory adapted to store a multi-valued data in a single memory cell
US10/675,946 US20040066680A1 (en) 2001-12-27 2003-10-02 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US10/871,110 US7301806B2 (en) 2001-12-27 2004-06-21 Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
US11/049,535 US7088616B2 (en) 2001-12-27 2005-02-03 Nonvolatile semiconductor memory adapted to store a multi-valued data in a single memory cell
US11/417,185 US7286404B2 (en) 2001-12-27 2006-05-04 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
US11/871,441 US7405970B2 (en) 2001-12-27 2007-10-12 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US12/168,283 US7672168B2 (en) 2001-12-27 2008-07-07 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US12/652,418 US7864591B2 (en) 2001-12-27 2010-01-05 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US12/967,227 US8208311B2 (en) 2001-12-27 2010-12-14 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US13/482,577 US8605511B2 (en) 2001-01-27 2012-05-29 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US14/078,195 US8929135B2 (en) 2001-12-27 2013-11-12 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US14/559,265 US9257189B2 (en) 2001-12-27 2014-12-03 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
US14/983,802 US9508422B2 (en) 2001-12-27 2015-12-30 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
US15/299,255 US9734899B2 (en) 2001-12-27 2016-10-20 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US15/645,182 US9990987B2 (en) 2001-12-27 2017-07-10 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US15/973,644 US10236058B2 (en) 2001-12-27 2018-05-08 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US16/268,726 US10706919B2 (en) 2001-12-27 2019-02-06 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
US16/887,306 US11183235B2 (en) 2001-12-27 2020-05-29 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001397446A JP3631463B2 (ja) 2001-12-27 2001-12-27 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2003196988A JP2003196988A (ja) 2003-07-11
JP2003196988A5 true JP2003196988A5 (enExample) 2004-09-24
JP3631463B2 JP3631463B2 (ja) 2005-03-23

Family

ID=19189193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001397446A Expired - Lifetime JP3631463B2 (ja) 2001-01-27 2001-12-27 不揮発性半導体記憶装置

Country Status (6)

Country Link
US (18) US6643188B2 (enExample)
EP (1) EP1324343B1 (enExample)
JP (1) JP3631463B2 (enExample)
KR (1) KR100467410B1 (enExample)
CN (2) CN100338775C (enExample)
TW (1) TW544933B (enExample)

Families Citing this family (352)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7366020B2 (en) * 1999-07-28 2008-04-29 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
US6914827B2 (en) * 1999-07-28 2005-07-05 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
JP3977799B2 (ja) 2003-12-09 2007-09-19 株式会社東芝 不揮発性半導体記憶装置
US7301806B2 (en) 2001-12-27 2007-11-27 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
JP4050555B2 (ja) * 2002-05-29 2008-02-20 株式会社東芝 不揮発性半導体記憶装置およびそのデータ書き込み方法
US6894931B2 (en) 2002-06-20 2005-05-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US7120068B2 (en) * 2002-07-29 2006-10-10 Micron Technology, Inc. Column/row redundancy architecture using latches programmed from a look up table
JP4086583B2 (ja) * 2002-08-08 2008-05-14 シャープ株式会社 不揮発性半導体メモリ装置およびデータ書き込み制御方法
US7234036B1 (en) * 2002-10-28 2007-06-19 Sandisk Corporation Method and apparatus for resolving physical blocks associated with a common logical block
US7136304B2 (en) * 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6657891B1 (en) 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7177199B2 (en) * 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
US7057931B2 (en) * 2003-11-07 2006-06-06 Sandisk Corporation Flash memory programming using gate induced junction leakage current
US7099179B2 (en) * 2003-12-22 2006-08-29 Unity Semiconductor Corporation Conductive memory array having page mode and burst mode write capability
US6888758B1 (en) 2004-01-21 2005-05-03 Sandisk Corporation Programming non-volatile memory
US7068539B2 (en) * 2004-01-27 2006-06-27 Sandisk Corporation Charge packet metering for coarse/fine programming of non-volatile memory
US7002843B2 (en) * 2004-01-27 2006-02-21 Sandisk Corporation Variable current sinking for coarse/fine programming of non-volatile memory
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
JP4170952B2 (ja) 2004-01-30 2008-10-22 株式会社東芝 半導体記憶装置
JP2008176924A (ja) * 2004-01-30 2008-07-31 Toshiba Corp 半導体記憶装置
US7466590B2 (en) * 2004-02-06 2008-12-16 Sandisk Corporation Self-boosting method for flash memory cells
US7161833B2 (en) 2004-02-06 2007-01-09 Sandisk Corporation Self-boosting system for flash memory cells
US7310347B2 (en) * 2004-03-14 2007-12-18 Sandisk, Il Ltd. States encoding in multi-bit flash cells
US20050213393A1 (en) * 2004-03-14 2005-09-29 M-Systems Flash Disk Pioneers, Ltd. States encoding in multi-bit flash cells for optimizing error rate
JP4427361B2 (ja) * 2004-03-16 2010-03-03 株式会社東芝 不揮発性半導体メモリ
KR100847587B1 (ko) 2004-04-06 2008-07-22 샌디스크 코포레이션 비휘발성 메모리의 가변 프로그래밍
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
US7057939B2 (en) * 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability
US7313649B2 (en) * 2004-04-28 2007-12-25 Matsushita Electric Industrial Co., Ltd. Flash memory and program verify method for flash memory
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
ATE511187T1 (de) * 2004-05-05 2011-06-15 Sandisk Corp Boosting zur steuerung der programmierung von nichtflüchtigem speicher
CN100573719C (zh) * 2004-05-11 2009-12-23 斯班逊有限公司 半导体器件及写入方法
US7307884B2 (en) 2004-06-15 2007-12-11 Sandisk Corporation Concurrent programming of non-volatile memory
US8375146B2 (en) 2004-08-09 2013-02-12 SanDisk Technologies, Inc. Ring bus structure and its use in flash memory systems
US7493457B2 (en) * 2004-11-08 2009-02-17 Sandisk Il. Ltd States encoding in multi-bit flash cells for optimizing error rate
US7092290B2 (en) * 2004-11-16 2006-08-15 Sandisk Corporation High speed programming system with reduced over programming
US7173859B2 (en) * 2004-11-16 2007-02-06 Sandisk Corporation Faster programming of higher level states in multi-level cell flash memory
JP4690713B2 (ja) * 2004-12-08 2011-06-01 株式会社東芝 不揮発性半導体記憶装置及びその駆動方法
JP4786171B2 (ja) 2004-12-10 2011-10-05 株式会社東芝 半導体記憶装置
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US6980471B1 (en) 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells
US7450433B2 (en) * 2004-12-29 2008-11-11 Sandisk Corporation Word line compensation in non-volatile memory erase operations
US7308525B2 (en) * 2005-01-10 2007-12-11 Sandisk Il Ltd. Method of managing a multi-bit cell flash memory with improved reliablility and performance
JP4764414B2 (ja) * 2005-02-03 2011-09-07 株式会社東芝 不揮発性半導体記憶装置及びその動作方法
US9104315B2 (en) 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
US20060184719A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct data file storage implementation techniques in flash memories
US20060184718A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories
US7877539B2 (en) 2005-02-16 2011-01-25 Sandisk Corporation Direct data file storage in flash memories
US7457166B2 (en) * 2005-03-31 2008-11-25 Sandisk Corporation Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
US7400537B2 (en) * 2005-03-31 2008-07-15 Sandisk Corporation Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
US7522457B2 (en) * 2005-03-31 2009-04-21 Sandisk Corporation Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
JP2006302345A (ja) * 2005-04-15 2006-11-02 Sony Corp データ処理装置、データ再生装置、データ処理方法及びプログラム
US7564713B2 (en) 2005-04-28 2009-07-21 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device wherein during data write a potential transferred to each bit line is changed in accordance with program order of program data
JP2006331618A (ja) * 2005-04-28 2006-12-07 Toshiba Corp 半導体集積回路装置
KR100602320B1 (ko) * 2005-05-03 2006-07-18 주식회사 하이닉스반도체 프로그램 속도가 균일한 비휘발성 메모리 소자
ITRM20050310A1 (it) * 2005-06-15 2006-12-16 Micron Technology Inc Convergenza a programmazione selettiva lenta in un dispositivo di memoria flash.
WO2006138413A1 (en) * 2005-06-15 2006-12-28 Micron Technology, Inc. Selective slow programming convergence in a flash memory device
US7958430B1 (en) * 2005-06-20 2011-06-07 Cypress Semiconductor Corporation Flash memory device and method
JP4282636B2 (ja) * 2005-06-22 2009-06-24 株式会社東芝 不揮発性半導体記憶装置とそのデータ書き込み方法
US7457910B2 (en) 2005-06-29 2008-11-25 Sandisk Corproation Method and system for managing partitions in a storage device
JP4711178B2 (ja) * 2005-07-06 2011-06-29 昭栄化学工業株式会社 積層電子部品の製造方法
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
EP1746604B1 (en) * 2005-07-22 2009-02-04 STMicroelectronics S.r.l. Method for accessing a multilevel nonvolatile memory device of the flash NAND type
US7409489B2 (en) 2005-08-03 2008-08-05 Sandisk Corporation Scheduling of reclaim operations in non-volatile memory
US7552271B2 (en) 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
US7669003B2 (en) * 2005-08-03 2010-02-23 Sandisk Corporation Reprogrammable non-volatile memory systems with indexing of directly stored data files
US7949845B2 (en) * 2005-08-03 2011-05-24 Sandisk Corporation Indexing of file data in reprogrammable non-volatile memories that directly store data files
US7558906B2 (en) 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US7480766B2 (en) 2005-08-03 2009-01-20 Sandisk Corporation Interfacing systems operating through a logical address space and on a direct data file basis
US7627733B2 (en) 2005-08-03 2009-12-01 Sandisk Corporation Method and system for dual mode access for storage devices
US20070084375A1 (en) * 2005-08-10 2007-04-19 Smith Kyle S High density cartridge and method for reloading
KR100729359B1 (ko) 2005-09-23 2007-06-15 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
JP2007102865A (ja) * 2005-09-30 2007-04-19 Toshiba Corp 半導体集積回路装置
US7814262B2 (en) 2005-10-13 2010-10-12 Sandisk Corporation Memory system storing transformed units of data in fixed sized storage blocks
US7529905B2 (en) * 2005-10-13 2009-05-05 Sandisk Corporation Method of storing transformed units of data in a memory system having fixed sized storage blocks
US7681109B2 (en) 2005-10-13 2010-03-16 Ramot At Tel Aviv University Ltd. Method of error correction in MBC flash memory
US7206235B1 (en) 2005-10-14 2007-04-17 Sandisk Corporation Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
US7286406B2 (en) * 2005-10-14 2007-10-23 Sandisk Corporation Method for controlled programming of non-volatile memory exhibiting bit line coupling
US7526715B2 (en) * 2005-10-17 2009-04-28 Ramot At Tel Aviv University Ltd. Probabilistic error correction in multi-bit-per-cell flash memory
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
JP4836548B2 (ja) 2005-11-11 2011-12-14 株式会社東芝 半導体集積回路装置
US8683082B2 (en) * 2005-11-14 2014-03-25 Sandisk Technologies Inc. Removable memory devices for displaying advertisement content on host systems using applications launched from removable memory devices
US8683081B2 (en) * 2005-11-14 2014-03-25 Sandisk Technologies Inc. Methods for displaying advertisement content on host system using application launched from removable memory device
US7353073B2 (en) * 2005-12-01 2008-04-01 Sandisk Corporation Method for managing appliances
US7739078B2 (en) * 2005-12-01 2010-06-15 Sandisk Corporation System for managing appliances
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
US7877540B2 (en) 2005-12-13 2011-01-25 Sandisk Corporation Logically-addressed file storage methods
US7355889B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
US7355888B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
US7747837B2 (en) 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US20070143566A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with data alignment in a directly mapped file storage system
US20070143111A1 (en) * 2005-12-21 2007-06-21 Conley Kevin M Voice controlled portable memory storage device
US20070143567A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for data alignment in non-volatile memories with a directly mapped file storage system
US7793068B2 (en) 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
US8161289B2 (en) * 2005-12-21 2012-04-17 SanDisk Technologies, Inc. Voice controlled portable memory storage device
US20070156998A1 (en) * 2005-12-21 2007-07-05 Gorobets Sergey A Methods for memory allocation in non-volatile memories with a directly mapped file storage system
US20070143378A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with adaptive file handling in a directly mapped file storage system
US20070143561A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system
US7917949B2 (en) * 2005-12-21 2011-03-29 Sandisk Corporation Voice controlled portable memory storage device
US20070143117A1 (en) * 2005-12-21 2007-06-21 Conley Kevin M Voice controlled portable memory storage device
US7769978B2 (en) 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
US8479186B2 (en) * 2005-12-22 2013-07-02 Sandisk Technologies Inc. Method for program code execution with memory storage controller participation
US8484632B2 (en) * 2005-12-22 2013-07-09 Sandisk Technologies Inc. System for program code execution with memory storage controller participation
US7362615B2 (en) * 2005-12-27 2008-04-22 Sandisk Corporation Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
US7436703B2 (en) * 2005-12-27 2008-10-14 Sandisk Corporation Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
US7307887B2 (en) * 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7310255B2 (en) * 2005-12-29 2007-12-18 Sandisk Corporation Non-volatile memory with improved program-verify operations
US7224614B1 (en) 2005-12-29 2007-05-29 Sandisk Corporation Methods for improved program-verify operations in non-volatile memories
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7352629B2 (en) * 2005-12-29 2008-04-01 Sandisk Corporation Systems for continued verification in non-volatile memory write operations
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7680041B2 (en) * 2006-01-31 2010-03-16 Zensys A/S Node repair in a mesh network
JP4157563B2 (ja) 2006-01-31 2008-10-01 株式会社東芝 半導体集積回路装置
JP2007213664A (ja) * 2006-02-08 2007-08-23 Nec Electronics Corp 不揮発性半導体記憶装置、及び不揮発性半導体記憶装置の書込み方法
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US8848442B2 (en) * 2006-03-06 2014-09-30 Sandisk Il Ltd. Multi-bit-per-cell flash memory device with non-bijective mapping
US7388781B2 (en) * 2006-03-06 2008-06-17 Sandisk Il Ltd. Multi-bit-per-cell flash memory device with non-bijective mapping
US7397703B2 (en) * 2006-03-21 2008-07-08 Freescale Semiconductor, Inc. Non-volatile memory with controlled program/erase
US7511995B2 (en) * 2006-03-30 2009-03-31 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
US7428165B2 (en) * 2006-03-30 2008-09-23 Sandisk Corporation Self-boosting method with suppression of high lateral electric fields
US7515463B2 (en) 2006-04-12 2009-04-07 Sandisk Corporation Reducing the impact of program disturb during read
US7436713B2 (en) 2006-04-12 2008-10-14 Sandisk Corporation Reducing the impact of program disturb
US7426137B2 (en) 2006-04-12 2008-09-16 Sandisk Corporation Apparatus for reducing the impact of program disturb during read
US7499326B2 (en) * 2006-04-12 2009-03-03 Sandisk Corporation Apparatus for reducing the impact of program disturb
US7447821B2 (en) * 2006-04-21 2008-11-04 Sandisk Corporation U3 adapter
US7516261B2 (en) * 2006-04-21 2009-04-07 Sandisk Corporation Method for U3 adapter
US7436709B2 (en) * 2006-05-05 2008-10-14 Sandisk Corporation NAND flash memory with boosting
US7286408B1 (en) 2006-05-05 2007-10-23 Sandisk Corporation Boosting methods for NAND flash memory
US7457163B2 (en) * 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7440331B2 (en) * 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7492633B2 (en) 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7486561B2 (en) 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7533328B2 (en) * 2006-07-04 2009-05-12 Sandisk Il, Ltd. Method of error correction in a multi-bit-per-cell flash memory
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7885119B2 (en) * 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
ATE472803T1 (de) * 2006-07-20 2010-07-15 Sandisk Corp Floating-gate-speicher mit kopplungskompensation während der programmierung
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
JP4886434B2 (ja) * 2006-09-04 2012-02-29 株式会社東芝 不揮発性半導体記憶装置
JP4997882B2 (ja) * 2006-09-05 2012-08-08 ソニー株式会社 不揮発性半導体記憶装置およびその書き込み方法
US7440326B2 (en) 2006-09-06 2008-10-21 Sandisk Corporation Programming non-volatile memory with improved boosting
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
US8184478B2 (en) * 2006-09-27 2012-05-22 Sandisk Technologies Inc. Apparatus with reduced program disturb in non-volatile storage
US8189378B2 (en) * 2006-09-27 2012-05-29 Sandisk Technologies Inc. Reducing program disturb in non-volatile storage
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
KR100769776B1 (ko) * 2006-09-29 2007-10-24 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 프로그램 방법
US7450426B2 (en) * 2006-10-10 2008-11-11 Sandisk Corporation Systems utilizing variable program voltage increment values in non-volatile memory program operations
US7474561B2 (en) * 2006-10-10 2009-01-06 Sandisk Corporation Variable program voltage increment values in non-volatile memory program operations
JP4818061B2 (ja) * 2006-10-13 2011-11-16 株式会社東芝 不揮発性半導体メモリ
US7495954B2 (en) * 2006-10-13 2009-02-24 Sandisk Corporation Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
US7499317B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
US7535766B2 (en) * 2006-10-13 2009-05-19 Sandisk Corporation Systems for partitioned soft programming in non-volatile memory
US7372748B2 (en) * 2006-10-16 2008-05-13 Sandisk Corporation Voltage regulator in a non-volatile memory device
US7596031B2 (en) 2006-10-30 2009-09-29 Sandisk Corporation Faster programming of highest multi-level state for non-volatile memory
JP2008117471A (ja) 2006-11-02 2008-05-22 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性メモリシステム
US7904780B2 (en) * 2006-11-03 2011-03-08 Sandisk Corporation Methods of modulating error correction coding
US8001441B2 (en) * 2006-11-03 2011-08-16 Sandisk Technologies Inc. Nonvolatile memory with modulated error correction coding
US8166267B2 (en) * 2006-12-26 2012-04-24 Sandisk Technologies Inc. Managing a LBA interface in a direct data file memory system
US8046522B2 (en) 2006-12-26 2011-10-25 SanDisk Technologies, Inc. Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks
US7739444B2 (en) 2006-12-26 2010-06-15 Sandisk Corporation System using a direct data file system with a continuous logical address space interface
US7917686B2 (en) * 2006-12-26 2011-03-29 Sandisk Corporation Host system with direct data file interface configurability
US8209461B2 (en) 2006-12-26 2012-06-26 Sandisk Technologies Inc. Configuration of host LBA interface with flash memory
US20080155175A1 (en) * 2006-12-26 2008-06-26 Sinclair Alan W Host System That Manages a LBA Interface With Flash Memory
US7570520B2 (en) * 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
US7551482B2 (en) * 2006-12-27 2009-06-23 Sandisk Corporation Method for programming with initial programming voltage based on trial
KR100816155B1 (ko) * 2006-12-28 2008-03-21 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 멀티레벨 셀 프로그램 방법
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7450430B2 (en) * 2006-12-29 2008-11-11 Sandisk Corporation Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7468918B2 (en) * 2006-12-29 2008-12-23 Sandisk Corporation Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7890723B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation Method for code execution
US7890724B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation System for code execution
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7433241B2 (en) * 2006-12-29 2008-10-07 Sandisk Corporation Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
US7463531B2 (en) * 2006-12-29 2008-12-09 Sandisk Corporation Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7590007B2 (en) 2007-01-11 2009-09-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
ITRM20070167A1 (it) * 2007-03-27 2008-09-29 Micron Technology Inc Non-volatile multilevel memory cell programming
US7729165B2 (en) * 2007-03-29 2010-06-01 Flashsilicon, Incorporation Self-adaptive and self-calibrated multiple-level non-volatile memories
US7864584B2 (en) * 2007-05-02 2011-01-04 Micron Technology, Inc. Expanded programming window for non-volatile multilevel memory cells
US7656709B2 (en) * 2007-05-03 2010-02-02 Micron Technology, Inc. NAND step up voltage switching method
US7525870B2 (en) * 2007-05-21 2009-04-28 Sandisk Il, Ltd. Methods for optimizing page selection in flash-memory devices
US8429352B2 (en) * 2007-06-08 2013-04-23 Sandisk Technologies Inc. Method and system for memory block flushing
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
CN101796591B (zh) * 2007-07-03 2013-04-24 桑迪士克科技股份有限公司 使用针对改进感测的不同参考电平的非易失性存储器中的粗略/精细编程验证
US20090043831A1 (en) * 2007-08-11 2009-02-12 Mcm Portfolio Llc Smart Solid State Drive And Method For Handling Critical Files
JP4444320B2 (ja) 2007-09-07 2010-03-31 株式会社東芝 不揮発性半導体記憶装置
JP4510060B2 (ja) 2007-09-14 2010-07-21 株式会社東芝 不揮発性半導体記憶装置の読み出し／書き込み制御方法
US7978520B2 (en) 2007-09-27 2011-07-12 Sandisk Corporation Compensation of non-volatile memory chip non-idealities by program pulse adjustment
US20090088876A1 (en) * 2007-09-28 2009-04-02 Conley Kevin M Portable, digital media player and associated methods
US7688638B2 (en) * 2007-12-07 2010-03-30 Sandisk Corporation Faster programming of multi-level non-volatile storage through reduced verify operations
US7590001B2 (en) 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
US7916544B2 (en) * 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
KR101448851B1 (ko) 2008-02-26 2014-10-13 삼성전자주식회사 비휘발성 메모리 장치에서의 프로그래밍 방법
JP4693859B2 (ja) 2008-03-21 2011-06-01 株式会社東芝 不揮発性半導体記憶装置及びその制御方法
US20090271562A1 (en) * 2008-04-25 2009-10-29 Sinclair Alan W Method and system for storage address re-mapping for a multi-bank memory device
CA2629960C (en) * 2008-04-28 2009-12-08 Westport Power Inc. Apparatus and method for improving the accuracy of measurements taken with a capacitance-type sensor
KR101378602B1 (ko) * 2008-05-13 2014-03-25 삼성전자주식회사 메모리 장치 및 메모리 프로그래밍 방법
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
JP2010009733A (ja) * 2008-06-30 2010-01-14 Toshiba Corp 不揮発性半導体記憶装置
JP2010016062A (ja) * 2008-07-01 2010-01-21 Toshiba Corp 半導体装置
US8130552B2 (en) * 2008-09-11 2012-03-06 Sandisk Technologies Inc. Multi-pass programming for memory with reduced data storage requirement
DE102008057681B3 (de) * 2008-11-17 2009-12-10 Giesecke & Devrient Gmbh Verfahren zum sicheren Speichern von Daten in einem Speicher eines tragbaren Datenträgers
US8064252B2 (en) 2008-11-21 2011-11-22 Micron Technology, Inc. Multi-pass programming in a memory device
JP5193830B2 (ja) 2008-12-03 2013-05-08 株式会社東芝 不揮発性半導体メモリ
TWI397071B (zh) * 2008-12-31 2013-05-21 A Data Technology Co Ltd 記憶體儲存裝置及其控制方法
JP2010211883A (ja) 2009-03-11 2010-09-24 Toshiba Corp 不揮発性半導体記憶装置
JP2010218623A (ja) 2009-03-17 2010-09-30 Toshiba Corp 不揮発性半導体記憶装置
JP5363154B2 (ja) * 2009-03-19 2013-12-11 ラピスセミコンダクタ株式会社 半導体不揮発性メモリ、半導体不揮発性メモリの電荷蓄積方法、及び電荷蓄積プログラム
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US7983065B2 (en) * 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
KR101717798B1 (ko) 2009-04-08 2017-03-17 샌디스크 테크놀로지스 엘엘씨 수직의 비트 라인들 및 이중 전역 비트 라인 아키텍처를 가지는 재프로그래밍 가능한 메모리 요소들의 3차원 어레이
KR101528886B1 (ko) 2009-04-09 2015-06-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
JP2011008838A (ja) * 2009-06-23 2011-01-13 Toshiba Corp 不揮発性半導体記憶装置およびその書き込み方法
JP2011008857A (ja) * 2009-06-25 2011-01-13 Toshiba Corp 不揮発性半導体記憶装置およびその書き込み方法
US8054691B2 (en) 2009-06-26 2011-11-08 Sandisk Technologies Inc. Detecting the completion of programming for non-volatile storage
KR101626548B1 (ko) 2009-07-15 2016-06-01 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템, 및 그것의 프로그램 방법
JP5284909B2 (ja) * 2009-08-26 2013-09-11 力晶科技股▲ふん▼有限公司 Ｎａｎｄ型フラッシュメモリとその消去方法
US8238166B2 (en) * 2009-10-12 2012-08-07 Macronix International Co., Ltd. Methods of programming and reading single-level trapped-charge memory cells using second-bit threshold detection
US8089815B2 (en) * 2009-11-24 2012-01-03 Sandisk Technologies Inc. Programming memory with bit line floating to reduce channel-to-floating gate coupling
US7986573B2 (en) 2009-11-24 2011-07-26 Sandisk Technologies Inc. Programming memory with direct bit line driving to reduce channel-to-floating gate coupling
US8473669B2 (en) * 2009-12-07 2013-06-25 Sandisk Technologies Inc. Method and system for concurrent background and foreground operations in a non-volatile memory array
JP2011150749A (ja) 2010-01-20 2011-08-04 Toshiba Corp 不揮発性半導体記憶装置
WO2011092532A1 (en) 2010-01-28 2011-08-04 Sandisk Il Ltd. Sliding-window error correction
JP2011159351A (ja) * 2010-01-29 2011-08-18 Toshiba Corp 不揮発性半導体記憶装置および不揮発性メモリシステム
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP2011198419A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 不揮発性半導体記憶装置およびその書き込み方法
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US20110297912A1 (en) 2010-06-08 2011-12-08 George Samachisa Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
JP2012014816A (ja) 2010-07-05 2012-01-19 Toshiba Corp 不揮発性半導体記憶装置
US8274838B2 (en) * 2010-07-19 2012-09-25 Sandisk Technologies Inc. Programming non-volatile memory with bit line voltage step up
US8452911B2 (en) 2010-09-30 2013-05-28 Sandisk Technologies Inc. Synchronized maintenance operations in a multi-bank storage system
JP2012084207A (ja) 2010-10-13 2012-04-26 Toshiba Corp 不揮発性半導体記憶装置
US8737138B2 (en) * 2010-11-18 2014-05-27 Micron Technology, Inc. Memory instruction including parameter to affect operating condition of memory
US9227456B2 (en) 2010-12-14 2016-01-05 Sandisk 3D Llc Memories with cylindrical read/write stacks
US8625322B2 (en) 2010-12-14 2014-01-07 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
JP5075992B2 (ja) * 2011-02-02 2012-11-21 株式会社東芝 半導体記憶装置
CN103345936B (zh) * 2011-04-19 2016-08-03 黑龙江大学 任意k值和8值dram的写入电路和读出电路
JP2011204356A (ja) * 2011-07-19 2011-10-13 Toshiba Corp 不揮発性半導体記憶装置
US8432740B2 (en) * 2011-07-21 2013-04-30 Sandisk Technologies Inc. Program algorithm with staircase waveform decomposed into multiple passes
KR20130016619A (ko) * 2011-08-08 2013-02-18 삼성전자주식회사 불휘발성 메모리 장치의 프로그램 방법
US8743615B2 (en) 2011-08-22 2014-06-03 Sandisk Technologies Inc. Read compensation for partially programmed blocks of non-volatile storage
JP2013045478A (ja) 2011-08-23 2013-03-04 Toshiba Corp 不揮発性半導体記憶装置
JP5380506B2 (ja) 2011-09-22 2014-01-08 株式会社東芝 不揮発性半導体記憶装置
JP5296175B2 (ja) * 2011-10-24 2013-09-25 株式会社東芝 半導体記憶装置
JP2013122799A (ja) 2011-12-09 2013-06-20 Toshiba Corp 不揮発性半導体記憶装置
US8762627B2 (en) 2011-12-21 2014-06-24 Sandisk Technologies Inc. Memory logical defragmentation during garbage collection
US8605507B2 (en) 2012-01-12 2013-12-10 Macronix International Co., Ltd. Flash programming technology for improved margin and inhibiting disturbance
US8582381B2 (en) 2012-02-23 2013-11-12 SanDisk Technologies, Inc. Temperature based compensation during verify operations for non-volatile storage
US9111620B2 (en) * 2012-03-30 2015-08-18 Micron Technology, Inc. Memory having memory cell string and coupling components
US9281029B2 (en) 2012-06-15 2016-03-08 Sandisk 3D Llc Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
US8895437B2 (en) 2012-06-15 2014-11-25 Sandisk 3D Llc Method for forming staircase word lines in a 3D non-volatile memory having vertical bit lines
US9053819B2 (en) 2012-07-11 2015-06-09 Sandisk Technologies Inc. Programming method to tighten threshold voltage width with avoiding program disturb
US9142315B2 (en) 2012-07-25 2015-09-22 Freescale Semiconductor, Inc. Methods and systems for adjusting NVM cell bias conditions for read/verify operations to compensate for performance degradation
US8873316B2 (en) 2012-07-25 2014-10-28 Freescale Semiconductor, Inc. Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation
US8902667B2 (en) * 2012-07-25 2014-12-02 Freescale Semiconductor, Inc. Methods and systems for adjusting NVM cell bias conditions for program/erase operations to reduce performance degradation
US8830760B2 (en) 2012-08-16 2014-09-09 Kabushiki Kaisha Toshiba Semiconductor storage device
US9336133B2 (en) 2012-12-31 2016-05-10 Sandisk Technologies Inc. Method and system for managing program cycles including maintenance programming operations in a multi-layer memory
US9223693B2 (en) 2012-12-31 2015-12-29 Sandisk Technologies Inc. Memory system having an unequal number of memory die on different control channels
US9348746B2 (en) 2012-12-31 2016-05-24 Sandisk Technologies Method and system for managing block reclaim operations in a multi-layer memory
US9465731B2 (en) 2012-12-31 2016-10-11 Sandisk Technologies Llc Multi-layer non-volatile memory system having multiple partitions in a layer
US9734050B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for managing background operations in a multi-layer memory
US8873284B2 (en) 2012-12-31 2014-10-28 Sandisk Technologies Inc. Method and system for program scheduling in a multi-layer memory
US9734911B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for asynchronous die operations in a non-volatile memory
US8885416B2 (en) 2013-01-30 2014-11-11 Sandisk Technologies Inc. Bit line current trip point modulation for reading nonvolatile storage elements
US9064547B2 (en) 2013-03-05 2015-06-23 Sandisk 3D Llc 3D non-volatile memory having low-current cells and methods
CA2905948C (en) 2013-03-14 2022-01-11 Board Of Regents Of The University Of Nebraska Methods, systems, and devices relating to robotic surgical devices, end effectors, and controllers
JP2014186763A (ja) 2013-03-21 2014-10-02 Toshiba Corp 不揮発性半導体記憶装置
JP2014225310A (ja) * 2013-05-16 2014-12-04 株式会社東芝 不揮発性半導体記憶装置
US9183940B2 (en) 2013-05-21 2015-11-10 Aplus Flash Technology, Inc. Low disturbance, power-consumption, and latency in NAND read and program-verify operations
US9123430B2 (en) 2013-06-14 2015-09-01 Sandisk 3D Llc Differential current sense amplifier and method for non-volatile memory
US8933516B1 (en) 2013-06-24 2015-01-13 Sandisk 3D Llc High capacity select switches for three-dimensional structures
US9263137B2 (en) 2013-06-27 2016-02-16 Aplus Flash Technology, Inc. NAND array architecture for multiple simutaneous program and read
KR102125376B1 (ko) * 2013-07-01 2020-06-23 삼성전자주식회사 저장 장치 및 그것의 쓰기 방법
WO2015013689A2 (en) 2013-07-25 2015-01-29 Aplus Flash Technology, Inc. Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations
JP5669903B2 (ja) * 2013-09-05 2015-02-18 ラピスセミコンダクタ株式会社 半導体不揮発性メモリ、半導体不揮発性メモリの電荷蓄積方法、及び電荷蓄積プログラム
KR102137075B1 (ko) * 2013-09-10 2020-07-23 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 프로그램 방법
KR102118979B1 (ko) * 2013-09-13 2020-06-05 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US9293205B2 (en) 2013-09-14 2016-03-22 Aplus Flash Technology, Inc Multi-task concurrent/pipeline NAND operations on all planes
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US8724380B1 (en) * 2013-11-13 2014-05-13 Avalanche Technology, Inc. Method for reading and writing multi-level cells
US9105343B2 (en) 2013-11-13 2015-08-11 Avalanche Technology, Inc. Multi-level cells and method for using the same
US9613704B2 (en) 2013-12-25 2017-04-04 Aplus Flash Technology, Inc 2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify
US9123392B1 (en) 2014-03-28 2015-09-01 Sandisk 3D Llc Non-volatile 3D memory with cell-selectable word line decoding
US9767894B2 (en) 2014-06-09 2017-09-19 Micron Technology, Inc. Programming memories with stepped programming pulses
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9659636B2 (en) 2014-07-22 2017-05-23 Peter Wung Lee NAND memory array with BL-hierarchical structure for concurrent all-BL, all-threshold-state program, and alternative-WL program, odd/even read and verify operations
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9449694B2 (en) * 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9875805B2 (en) 2015-01-23 2018-01-23 Sandisk Technologies Llc Double lockout in non-volatile memory
US9570179B2 (en) 2015-04-22 2017-02-14 Sandisk Technologies Llc Non-volatile memory with two phased programming
US9633719B2 (en) 2015-05-29 2017-04-25 Micron Technology, Inc. Programming memory cells to be programmed to different levels to an intermediate level from a lowest level
JP2017054567A (ja) * 2015-09-10 2017-03-16 株式会社東芝 半導体記憶装置
US10157681B2 (en) 2015-09-14 2018-12-18 Sandisk Technologies Llc Programming of nonvolatile memory with verify level dependent on memory state and programming loop count
US9711211B2 (en) 2015-10-29 2017-07-18 Sandisk Technologies Llc Dynamic threshold voltage compaction for non-volatile memory
US10042553B2 (en) 2015-10-30 2018-08-07 Sandisk Technologies Llc Method and system for programming a multi-layer non-volatile memory having a single fold data path
US10133490B2 (en) 2015-10-30 2018-11-20 Sandisk Technologies Llc System and method for managing extended maintenance scheduling in a non-volatile memory
US10120613B2 (en) 2015-10-30 2018-11-06 Sandisk Technologies Llc System and method for rescheduling host and maintenance operations in a non-volatile memory
US9778855B2 (en) 2015-10-30 2017-10-03 Sandisk Technologies Llc System and method for precision interleaving of data writes in a non-volatile memory
US9530513B1 (en) * 2015-11-25 2016-12-27 Intel Corporation Methods and apparatus to read memory cells based on clock pulse counts
KR102429456B1 (ko) * 2016-03-08 2022-08-05 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
JP6502880B2 (ja) 2016-03-10 2019-04-17 東芝メモリ株式会社 半導体記憶装置
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
CN115337111B (zh) 2016-11-22 2025-04-25 内布拉斯加大学董事会 改进的粗定位装置及相关系统和方法
US10722319B2 (en) 2016-12-14 2020-07-28 Virtual Incision Corporation Releasable attachment device for coupling to medical devices and related systems and methods
US10217515B2 (en) 2017-04-01 2019-02-26 Intel Corporation Programming memory devices
US10438636B2 (en) * 2017-12-07 2019-10-08 Advanced Micro Devices, Inc. Capacitive structure for memory write assist
JP7065637B2 (ja) * 2018-02-22 2022-05-12 ルネサスエレクトロニクス株式会社 半導体装置
US10719248B2 (en) * 2018-04-20 2020-07-21 Micron Technology, Inc. Apparatuses and methods for counter update operations
JP2019200826A (ja) 2018-05-14 2019-11-21 東芝メモリ株式会社 半導体記憶装置
JP2020047330A (ja) 2018-09-18 2020-03-26 キオクシア株式会社 半導体記憶装置
US10978145B2 (en) 2019-08-14 2021-04-13 Sandisk Technologies Llc Programming to minimize cross-temperature threshold voltage widening
US11107535B2 (en) 2019-09-10 2021-08-31 Adesto Technologies Corporation Memory device with adaptive noise and voltage suppression during read-while-write operations
CA3186863A1 (en) 2020-07-06 2022-01-13 Virtual Incision Corporation Surgical robot positioning system and related devices and methods
KR102773349B1 (ko) * 2020-09-24 2025-02-25 양쯔 메모리 테크놀로지스 씨오., 엘티디. Nand 메모리 프로그래밍 아키텍처 및 방법
CN118963529A (zh) 2021-05-25 2024-11-15 长江存储科技有限责任公司 用于半导体设备中的功率节省的方法和装置
JP2023093187A (ja) 2021-12-22 2023-07-04 キオクシア株式会社 半導体記憶装置
JP2023137905A (ja) 2022-03-18 2023-09-29 キオクシア株式会社 半導体記憶装置
KR20240123120A (ko) 2023-02-06 2024-08-13 에스케이하이닉스 주식회사 메모리 장치, 메모리 장치의 동작 방법 및 메모리 시스템

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0244394B1 (de) * 1986-04-23 1992-06-17 AVL Medical Instruments AG Sensorelement zur Bestimmung von Stoffkonzentrationen
FR2604554B1 (fr) * 1986-09-30 1988-11-10 Eurotechnique Sa Dispositif de securite pourla programmation d'une memoire non volatile programmable electriquement
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5602789A (en) * 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
KR960002006B1 (ko) * 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
JPH0526199A (ja) 1991-07-19 1993-02-02 Mitsubishi Electric Corp 軸流送風機
JPH0574182A (ja) * 1991-09-10 1993-03-26 Nec Corp 不揮発性半導体記憶装置
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US5361227A (en) 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP2001266583A (ja) * 1991-12-19 2001-09-28 Toshiba Corp 不揮発性半導体記憶装置
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP2922116B2 (ja) 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
JP3512833B2 (ja) 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3476952B2 (ja) * 1994-03-15 2003-12-10 株式会社東芝 不揮発性半導体記憶装置
US5680347A (en) * 1994-06-29 1997-10-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP3199989B2 (ja) 1994-09-30 2001-08-20 株式会社東芝 不揮発性半導体記憶装置とその過書込み救済方法
US5694356A (en) 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US6005805A (en) * 1994-12-27 1999-12-21 Nkk Corporation Nonvolatile semiconductor device with a verify function
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5682346A (en) * 1995-03-29 1997-10-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having suitable writing efficiency
JP3153730B2 (ja) 1995-05-16 2001-04-09 株式会社東芝 不揮発性半導体記憶装置
JPH0945090A (ja) * 1995-07-31 1997-02-14 Nkk Corp 不揮発性半導体記憶装置
US5572462A (en) * 1995-08-02 1996-11-05 Aplus Integrated Circuits, Inc. Multistate prom and decompressor
US5576992A (en) * 1995-08-30 1996-11-19 Texas Instruments Incorporated Extended-life method for soft-programming floating-gate memory cells
KR100253868B1 (ko) * 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치
JP3392604B2 (ja) 1995-11-14 2003-03-31 株式会社東芝 不揮発性半導体記憶装置
KR100199348B1 (ko) * 1995-12-23 1999-06-15 김영환 반도체 소자의 제조방법
KR100244864B1 (ko) * 1996-03-18 2000-03-02 니시무로 타이죠 불휘발성 반도체 기억 장치
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
JP3200012B2 (ja) * 1996-04-19 2001-08-20 株式会社東芝 記憶システム
JP3740212B2 (ja) * 1996-05-01 2006-02-01 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3414587B2 (ja) 1996-06-06 2003-06-09 株式会社東芝 不揮発性半導体記憶装置
US5754469A (en) * 1996-06-14 1998-05-19 Macronix International Co., Ltd. Page mode floating gate memory device storing multiple bits per cell
US6134148A (en) * 1997-09-30 2000-10-17 Hitachi, Ltd. Semiconductor integrated circuit and data processing system
US5818758A (en) * 1996-12-31 1998-10-06 Intel Corporation Zero voltage drop negative switch for dual well processes
JPH10228786A (ja) 1997-02-17 1998-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置及びその閾値制御方法
US6134140A (en) 1997-05-14 2000-10-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells
JP3517081B2 (ja) * 1997-05-22 2004-04-05 株式会社東芝 多値不揮発性半導体記憶装置
JPH1131391A (ja) * 1997-07-10 1999-02-02 Sony Corp 不揮発性半導体記憶装置
US5959892A (en) * 1997-08-26 1999-09-28 Macronix International Co., Ltd. Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
JP3486079B2 (ja) * 1997-09-18 2004-01-13 株式会社東芝 半導体記憶装置
JP3572179B2 (ja) * 1997-10-07 2004-09-29 シャープ株式会社 不揮発性半導体記憶装置およびその書き込み方法
JP3906545B2 (ja) 1998-02-03 2007-04-18 ソニー株式会社 不揮発性半導体記憶装置
JP3344313B2 (ja) * 1998-03-25 2002-11-11 日本電気株式会社 不揮発性半導体メモリ装置
JP4306042B2 (ja) * 1998-09-16 2009-07-29 ソニー株式会社 不揮発性半導体記憶装置、並びに不揮発性半導体記憶装置のベリファイ方法及び読み出し方法
JP4154771B2 (ja) 1998-11-10 2008-09-24 ソニー株式会社 不揮発性半導体記憶装置およびそのデータ書き込み方法
JP2000163977A (ja) 1998-11-20 2000-06-16 Sony Corp 不揮発性半導体記憶装置及びそのデータ書き込み方法
JP3905990B2 (ja) * 1998-12-25 2007-04-18 株式会社東芝 記憶装置とその記憶方法
JP3410036B2 (ja) * 1999-02-03 2003-05-26 シャープ株式会社 不揮発性半導体記憶装置への情報の書き込み方法
US6208506B1 (en) * 1999-05-19 2001-03-27 Gei-Jon Pao Space saving CD-ROM/DVD drive mechanism used with electronic devices
JP2001093288A (ja) 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
KR100319559B1 (ko) * 1999-11-01 2002-01-05 윤종용 문턱 전압 분포들 사이의 마진을 일정하게 유지할 수 있는멀티-스테이트 불휘발성 반도체 메모리 장치
US6259627B1 (en) * 2000-01-27 2001-07-10 Multi Level Memory Technology Read and write operations using constant row line voltage and variable column line load
JP3776307B2 (ja) 2000-04-26 2006-05-17 沖電気工業株式会社 不揮発性メモリアナログ電圧書き込み回路
JP3942342B2 (ja) * 2000-06-30 2007-07-11 富士通株式会社 多値データを記録する不揮発性メモリ
JP3922516B2 (ja) * 2000-09-28 2007-05-30 株式会社ルネサステクノロジ 不揮発性メモリと不揮発性メモリの書き込み方法
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
JP4282248B2 (ja) 2001-03-30 2009-06-17 株式会社東芝 半導体記憶装置
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US7301806B2 (en) 2001-12-27 2007-11-27 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
JP3977799B2 (ja) 2003-12-09 2007-09-19 株式会社東芝 不揮発性半導体記憶装置
JP4004811B2 (ja) 2002-02-06 2007-11-07 株式会社東芝 不揮発性半導体記憶装置
JP2003242787A (ja) 2002-02-14 2003-08-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP4086583B2 (ja) 2002-08-08 2008-05-14 シャープ株式会社 不揮発性半導体メモリ装置およびデータ書き込み制御方法
JP4270832B2 (ja) 2002-09-26 2009-06-03 株式会社東芝 不揮発性半導体メモリ
US6657891B1 (en) 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
US6882567B1 (en) 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
JP4287222B2 (ja) 2003-09-03 2009-07-01 株式会社東芝 不揮発性半導体記憶装置
JP4322686B2 (ja) 2004-01-07 2009-09-02 株式会社東芝 不揮発性半導体記憶装置

Similar Documents

Publication Publication Date Title
JP2003196988A5 (enExample)
US7916534B2 (en) Semiconductor memory device
JP4640658B2 (ja) マルチレベル抑制スキーム
US8082382B2 (en) Memory device with user configurable density/performance
JP4806814B2 (ja) 不揮発性メモリデバイスにおけるマルチレベルプログラミング
JP3938309B2 (ja) リードディスターブを緩和したフラッシュメモリ
US7336531B2 (en) Multiple level cell memory device with single bit per cell, re-mappable memory block
JPH11195299A5 (enExample)
US8773910B2 (en) Programming to mitigate memory cell performance differences
JP2001093288A5 (enExample)
JP2004118940A5 (enExample)
WO2009067357A1 (en) Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
JP2008123330A (ja) 不揮発性半導体記憶装置
KR20080027419A (ko) 메모리 시스템 및 그것의 프로그램 방법
US8451665B2 (en) Non-volatile memory device and method for operating the same
JP2009043391A (ja) フラッシュメモリ素子のプログラム方法
US7417894B2 (en) Single latch data circuit in a multiple level cell non-volatile memory device
US7684260B2 (en) Flash memory device and method for driving the same
US20120294088A1 (en) Memory segment accessing in a memory device
JP2009158082A (ja) メモリへのデータ書き込み方法及びデータ読み取り方法
KR102119179B1 (ko) 반도체 장치 및 그 동작 방법
US8886876B2 (en) Protecting groups of memory cells in a memory device
US9343168B2 (en) Multiple step programming in a memory device
JP5031296B2 (ja) Ｎｏｒフラッシュメモリ装置及びそのプログラム方法
JP4052857B2 (ja) 不揮発性半導体メモリアレイ及び該メモリアレイリード方法