JP4640658B2 - マルチレベル抑制スキーム - Google Patents
マルチレベル抑制スキーム Download PDFInfo
- Publication number
- JP4640658B2 JP4640658B2 JP2008034423A JP2008034423A JP4640658B2 JP 4640658 B2 JP4640658 B2 JP 4640658B2 JP 2008034423 A JP2008034423 A JP 2008034423A JP 2008034423 A JP2008034423 A JP 2008034423A JP 4640658 B2 JP4640658 B2 JP 4640658B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- channel region
- memory cell
- programming
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001629 suppression Effects 0.000 title description 4
- 238000000034 method Methods 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims 4
- 238000009826 distribution Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 11
- 230000006835 compression Effects 0.000 description 9
- 238000007906 compression Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000012795 verification Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Description
プログラミング動作中に用いられることができるマルチレベル阻止スキームを提供することが可能なメモリデバイスおよび方法が述べられた。部分的に各種バイアスレベルに上昇されそしてバイアスされたワード線に伴う容量性カップリングを介してさらに維持される分離されたチャネル領域を使用することにより、プログラミング速度が選択的に抑制(または阻止)されることができる。これは実質上同一時間でそしてプログラミング妨害効果の減少してプログラミングを完成するためにプログラミングが受けられる多数のメモリセルに異なる閾値を与えることができる。
Claims (10)
- 各メモリセルが所望のデータ状態を有するNANDメモリデバイスのメモリセルをプログラミングする方法であって、
第一チャネル領域が第一電圧に接続されている間前記第一電圧に第一ビット線をバイアスすることにより、前記第一チャネル領域を前記第一電圧にバイアスし、第二チャネル領域が第二電圧に接続されている間前記第二電圧に第二ビット線をバイアスすることにより、前記第二チャネル領域を前記第二電圧にバイアスし、前記第一電圧は前記第二電圧より高く、
前記第一チャネル領域を前記第一電圧にバイアスした後、前記第一チャネル領域を前記第一ビット線から分離し、前記第二チャネル領域を前記第二電圧にバイアスした後、前記第二チャネル領域を前記第二ビット線から分離し、
前記第二チャネル領域に接続する選択されたメモリセルの制御ゲートに第一プログラミング電圧を印加しながら、前記第一チャネル領域を前記第一電圧より高い第三電圧に持ち上げるとともに前記第二チャネル領域を前記第二電圧より高い第四電圧に持ち上げ、前記第三電圧が前記第四電圧よりも高く、
前記第一チャネル領域の前記第一ビット線からの分離を維持するとともに前記第一プログラミング電圧の印加を継続しながら、前記第二チャネル領域を前記第二ビット線へ放電するように、前記第二チャネル領域と前記第二ビット線を接続する選択ゲートの印加電圧を制御し、
前記第一チャネル領域の前記第一ビット線からの分離を維持しながら、前記第二チャネル領域を前記第二ビット線から分離し、
前記選択されたメモリセルの前記制御ゲートに前記第一プログラミング電圧よりも高い第二プログラミング電圧を印加し、次いで、前記選択されたメモリセルの前記制御ゲートへの前記第二プログラミング電圧の印加を継続しながら、前記選択されたメモリセルの前記所望のデータ状態に応じて、前記第二チャネル領域を前記第二ビット線に選択的に放電することを特徴とする方法。 - 前記選択されたメモリセルに接続する選択されたワード線に接続する各メモリセルのチャネルバイアスをそれぞれのメモリセルに直列に接続する一つまたはそれ以上のメモリセルと共有することをさらに含むことを特徴とする請求項1記載の方法。
- 前記選択されたワード線に接続する各メモリセルの前記チャネルバイアスをそれぞれのメモリセルに直列に接続する一つまたはそれ以上のメモリセルと分離することをさらに含むことを特徴とする請求項2記載の方法。
- 前記第一チャネル領域の前記第一ビット線からの分離を維持するとともに前記第一プログラミング電圧の印加を継続しながら、前記第二チャネル領域を前記第二ビット線へ放電することが、前記第二チャネル領域を接地電位に放電することを含むことを特徴とする請求項1記載の方法。
- 前記メモリセルをプログラミングする前に前記メモリセルにおける消去動作を実行し前記メモリセルが第1データ状態に消去されることを含むことを特徴とする請求項1記載の方法。
- 前記第一チャネル領域に接続されるメモリセルが過消去された場合、前記第二プログラミング電圧を印加しながら、前記第一チャネル領域に接続し、前記選択されたメモリセルに接続するワード線に接続するメモリセルを不完全に抑制することをさらに特徴とする請求項5記載の方法。
- 前記第二チャネル領域に接続する前記選択されたメモリセルの前記制御ゲートに前記第一プログラミング電圧を印加しながら、前記第二チャネル領域に接続する残りのメモリセルに第一パス電圧を印加し、
前記第二チャネル領域に接続する前記選択されたメモリセルの前記制御ゲートに前記第二プログラミング電圧を印加しながら、前記第二チャネル領域に接続する前記残りのメモリセルに第二パス電圧を印加し、
前記第二パス電圧が、前記第一パス電圧より高いことをさらに特徴とする、請求項1に記載の方法。 - 前記第一プログラミング電圧が、前記第一および第二パス電圧より高いことを特徴とする、請求項7に記載の方法。
- 前記第二電圧が、前記選択されたメモリセルの前記所望のデータ状態に基づいて選択されることを特徴とする、請求項1に記載の方法。
- 前記第一プログラミング電圧の印加を継続しながら前記第二チャネル領域を前記第二ビット線へ放電した後、前記第二チャネル領域を前記第二ビット線から分離する前に前記第二ビット線の電圧を上昇させることをさらに特徴とする、請求項1に記載の方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008034423A JP4640658B2 (ja) | 2008-02-15 | 2008-02-15 | マルチレベル抑制スキーム |
US12/059,506 US7864585B2 (en) | 2008-02-15 | 2008-03-31 | Multi level inhibit scheme |
US12/981,688 US8422297B2 (en) | 2008-02-15 | 2010-12-30 | Multi level inhibit scheme |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008034423A JP4640658B2 (ja) | 2008-02-15 | 2008-02-15 | マルチレベル抑制スキーム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009193638A JP2009193638A (ja) | 2009-08-27 |
JP4640658B2 true JP4640658B2 (ja) | 2011-03-02 |
Family
ID=40954967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008034423A Active JP4640658B2 (ja) | 2008-02-15 | 2008-02-15 | マルチレベル抑制スキーム |
Country Status (2)
Country | Link |
---|---|
US (2) | US7864585B2 (ja) |
JP (1) | JP4640658B2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4640658B2 (ja) * | 2008-02-15 | 2011-03-02 | マイクロン テクノロジー, インク. | マルチレベル抑制スキーム |
KR101407361B1 (ko) * | 2008-04-14 | 2014-06-13 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
KR101513714B1 (ko) * | 2008-07-09 | 2015-04-21 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
US8169822B2 (en) * | 2009-11-11 | 2012-05-01 | Sandisk Technologies Inc. | Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory |
US8358540B2 (en) * | 2010-01-13 | 2013-01-22 | Micron Technology, Inc. | Access line dependent biasing schemes |
JP5550386B2 (ja) * | 2010-03-03 | 2014-07-16 | 株式会社東芝 | 不揮発性半導体記憶装置及びメモリシステム |
US8369149B2 (en) | 2010-09-30 | 2013-02-05 | Sandisk Technologies Inc. | Multi-step channel boosting to reduce channel to floating gate coupling in memory |
KR101208695B1 (ko) | 2010-12-29 | 2012-12-06 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
US8711630B2 (en) | 2010-12-29 | 2014-04-29 | Hynix Semiconductor Inc. | Programming method of non-volatile memory device |
US20120236649A1 (en) * | 2011-03-17 | 2012-09-20 | Macronix International Co., Ltd. | Hot carrier programming of nand flash memory |
US8917553B2 (en) | 2011-03-25 | 2014-12-23 | Micron Technology, Inc. | Non-volatile memory programming |
US8514624B2 (en) | 2011-06-21 | 2013-08-20 | Micron Technology, Inc. | In-field block retiring |
US8488382B1 (en) | 2011-12-21 | 2013-07-16 | Sandisk Technologies Inc. | Erase inhibit for 3D non-volatile memory |
US9251907B2 (en) * | 2012-04-03 | 2016-02-02 | Micron Technology, Inc. | Memory devices and methods of operating memory devices including applying a potential to a source and a select gate between the source and a string of memory cells while performing a program operation on a memory cell in the string |
US8902650B2 (en) * | 2012-08-30 | 2014-12-02 | Micron Technology, Inc. | Memory devices and operating methods for a memory device |
US8988945B1 (en) * | 2013-10-10 | 2015-03-24 | Sandisk Technologies Inc. | Programming time improvement for non-volatile memory |
FR3012654A1 (fr) * | 2013-10-25 | 2015-05-01 | St Microelectronics Rousset | Procede d'ecriture et de lecture d'une memoire morte electriquement programmable et effacable multi-niveaux et dispositif de memoire correspondant |
US9123414B2 (en) * | 2013-11-22 | 2015-09-01 | Micron Technology, Inc. | Memory systems and memory programming methods |
US9336875B2 (en) | 2013-12-16 | 2016-05-10 | Micron Technology, Inc. | Memory systems and memory programming methods |
US9396791B2 (en) * | 2014-07-18 | 2016-07-19 | Micron Technology, Inc. | Programming memories with multi-level pass signal |
KR20160012738A (ko) * | 2014-07-25 | 2016-02-03 | 에스케이하이닉스 주식회사 | 삼차원 메모리 셀 어레이 구조를 갖는 반도체 메모리 장치 및 그것의 동작 방법 |
US9633719B2 (en) | 2015-05-29 | 2017-04-25 | Micron Technology, Inc. | Programming memory cells to be programmed to different levels to an intermediate level from a lowest level |
US9779817B2 (en) | 2015-06-16 | 2017-10-03 | Micron Technology, Inc. | Boosting channels of memory cells to reduce program disturb |
US9711228B1 (en) * | 2016-05-27 | 2017-07-18 | Micron Technology, Inc. | Apparatus and methods of operating memory with erase de-bias |
CN107958689B (zh) * | 2016-10-17 | 2020-08-18 | 旺宏电子股份有限公司 | 存储器阵列的操作方法 |
US9978457B1 (en) * | 2016-11-22 | 2018-05-22 | Macronix International Co., Ltd. | Method for operating memory array |
TWI682396B (zh) * | 2018-08-07 | 2020-01-11 | 旺宏電子股份有限公司 | 記憶體陣列的操作方法 |
JP7279259B2 (ja) * | 2020-04-28 | 2023-05-22 | 長江存儲科技有限責任公司 | メモリデバイスならびにそれの消去および検証方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000149577A (ja) * | 1998-11-10 | 2000-05-30 | Sony Corp | 不揮発性半導体記憶装置およびそのデータ書き込み方法 |
JP2007066440A (ja) * | 2005-08-31 | 2007-03-15 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2007536681A (ja) * | 2004-05-05 | 2007-12-13 | サンディスク コーポレイション | 非揮発性メモリのプログラミングを制御するためのブースティング |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100385226B1 (ko) * | 2000-11-22 | 2003-05-27 | 삼성전자주식회사 | 프로그램 디스터브를 방지할 수 있는 플래시 메모리 장치및 그것을 프로그램하는 방법 |
US6714457B1 (en) * | 2001-09-19 | 2004-03-30 | Aplus Flash Technology, Inc. | Parallel channel programming scheme for MLC flash memory |
JP3863485B2 (ja) * | 2002-11-29 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6937518B1 (en) * | 2003-07-10 | 2005-08-30 | Advanced Micro Devices, Inc. | Programming of a flash memory cell |
US6956770B2 (en) * | 2003-09-17 | 2005-10-18 | Sandisk Corporation | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
US7064980B2 (en) * | 2003-09-17 | 2006-06-20 | Sandisk Corporation | Non-volatile memory and method with bit line coupled compensation |
US6888758B1 (en) * | 2004-01-21 | 2005-05-03 | Sandisk Corporation | Programming non-volatile memory |
US7023733B2 (en) * | 2004-05-05 | 2006-04-04 | Sandisk Corporation | Boosting to control programming of non-volatile memory |
US7020026B2 (en) * | 2004-05-05 | 2006-03-28 | Sandisk Corporation | Bitline governed approach for program control of non-volatile memory |
KR100632942B1 (ko) * | 2004-05-17 | 2006-10-12 | 삼성전자주식회사 | 불 휘발성 메모리 장치의 프로그램 방법 |
KR100645055B1 (ko) * | 2004-10-28 | 2006-11-10 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
KR100721013B1 (ko) * | 2005-07-26 | 2007-05-22 | 삼성전자주식회사 | 낸드 플래시 메모리 장치 및 그것의 프로그램 방법 |
US7170788B1 (en) * | 2005-09-09 | 2007-01-30 | Sandisk Corporation | Last-first mode and apparatus for programming of non-volatile memory with reduced program disturb |
US7206235B1 (en) * | 2005-10-14 | 2007-04-17 | Sandisk Corporation | Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling |
US7440326B2 (en) * | 2006-09-06 | 2008-10-21 | Sandisk Corporation | Programming non-volatile memory with improved boosting |
US7535763B2 (en) * | 2006-11-16 | 2009-05-19 | Sandisk Corporation | Controlled boosting in non-volatile memory soft programming |
US7511996B2 (en) * | 2006-11-30 | 2009-03-31 | Mosaid Technologies Incorporated | Flash memory program inhibit scheme |
US7433241B2 (en) * | 2006-12-29 | 2008-10-07 | Sandisk Corporation | Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data |
US7468918B2 (en) * | 2006-12-29 | 2008-12-23 | Sandisk Corporation | Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data |
US7463531B2 (en) * | 2006-12-29 | 2008-12-09 | Sandisk Corporation | Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages |
US7450430B2 (en) * | 2006-12-29 | 2008-11-11 | Sandisk Corporation | Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages |
ITRM20070167A1 (it) * | 2007-03-27 | 2008-09-29 | Micron Technology Inc | Non-volatile multilevel memory cell programming |
US7656703B2 (en) * | 2007-05-25 | 2010-02-02 | Sandisk Corporation | Method for using transitional voltage during programming of non-volatile storage |
US7706189B2 (en) * | 2007-05-25 | 2010-04-27 | Sandisk Corporation | Non-volatile storage system with transitional voltage during programming |
KR100877103B1 (ko) * | 2007-06-01 | 2009-01-07 | 주식회사 하이닉스반도체 | 리드 디스터브가 억제되도록 하는 플래시 메모리소자의리드 방법 |
US7508715B2 (en) * | 2007-07-03 | 2009-03-24 | Sandisk Corporation | Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
JP4640658B2 (ja) * | 2008-02-15 | 2011-03-02 | マイクロン テクノロジー, インク. | マルチレベル抑制スキーム |
-
2008
- 2008-02-15 JP JP2008034423A patent/JP4640658B2/ja active Active
- 2008-03-31 US US12/059,506 patent/US7864585B2/en active Active
-
2010
- 2010-12-30 US US12/981,688 patent/US8422297B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000149577A (ja) * | 1998-11-10 | 2000-05-30 | Sony Corp | 不揮発性半導体記憶装置およびそのデータ書き込み方法 |
JP2007536681A (ja) * | 2004-05-05 | 2007-12-13 | サンディスク コーポレイション | 非揮発性メモリのプログラミングを制御するためのブースティング |
JP2007066440A (ja) * | 2005-08-31 | 2007-03-15 | Toshiba Corp | 不揮発性半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
US20110096599A1 (en) | 2011-04-28 |
US8422297B2 (en) | 2013-04-16 |
US7864585B2 (en) | 2011-01-04 |
JP2009193638A (ja) | 2009-08-27 |
US20090207657A1 (en) | 2009-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4640658B2 (ja) | マルチレベル抑制スキーム | |
US7203092B2 (en) | Flash memory array using adjacent bit line as source | |
US8385115B2 (en) | Methods of precharging non-volatile memory devices during a programming operation and memory devices programmed thereby | |
US9697907B2 (en) | Apparatuses and methods using dummy cells programmed to different states | |
US8369158B2 (en) | Erase operations and apparatus for a memory device | |
US8737131B2 (en) | Programming memory cells using smaller step voltages for higher program levels | |
US8593876B2 (en) | Sensing scheme in a memory device | |
KR20130034533A (ko) | 반도체 메모리 장치 및 이의 동작 방법 | |
KR20170032369A (ko) | 멀티-레벨 패스 신호를 이용한 메모리들의 프로그래밍 | |
US7733705B2 (en) | Reduction of punch-through disturb during programming of a memory device | |
US8498159B2 (en) | Independent well bias management in a memory device | |
US20080094912A1 (en) | Selective slow programming convergence in a flash memory device | |
US10504599B2 (en) | Connecting memory cells to a data line sequentially while applying a read voltage to the memory cells and programming the read data to a single memory cell | |
US20150294727A1 (en) | Sensing memory cells coupled to different access lines in different blocks of memory cells | |
US9099189B2 (en) | Methods and devices for memory reads with precharged data lines | |
JP4534211B2 (ja) | 信頼性が改善された多値セルメモリデバイス | |
US9589659B1 (en) | Pre-compensation of memory threshold voltage | |
US8254174B2 (en) | Memory segment accessing in a memory device | |
US8295098B2 (en) | Local sensing in a memory device | |
US8223561B2 (en) | Data line management in a memory device | |
US7983088B2 (en) | Programming in a memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100419 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100419 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100519 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100519 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100603 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100603 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100629 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100928 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100928 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101026 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101118 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4640658 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131210 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |